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    NP N Epitaxial Silicon Transistor: 2W Output Amplifier of Portable Radios in Class B Push-Pull Operation

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    Jorge José Figueiredo Siqueira
    This document provides specifications for the STC8050 NPN silicon transistor. It is intended for use in class B push-pull operation in 2W output amplifiers for portable radios. Key parameters include a collector current of 1.5A and power dissipation of 2W at a case temperature of 25°C. The transistor has absolute maximum ratings for collector-base voltage of 40V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. Typical characteristics include a DC current gain of 170 at 5mA collector current and 160 at 100mA collector current.

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    NP N Epitaxial Silicon Transistor: 2W Output Amplifier of Portable Radios in Class B Push-Pull Operation

    Uploaded by

    Jorge José Figueiredo Siqueira
    56 views2 pages
    This document provides specifications for the STC8050 NPN silicon transistor. It is intended for use in class B push-pull operation in 2W output amplifiers for portable radios. Key parameters include a collector current of 1.5A and power dissipation of 2W at a case temperature of 25°C. The transistor has absolute maximum ratings for collector-base voltage of 40V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. Typical characteristics include a DC current gain of 170 at 5mA collector current and 160 at 100mA collector current.

    Original Description:

    c8050

    Original Title

    C8050-datasheet

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    This document provides specifications for the STC8050 NPN silicon transistor. It is intended for use in class B push-pull operation in 2W output amplifiers for portable radios. Key parameters include a collector current of 1.5A and power dissipation of 2W at a case temperature of 25°C. The transistor has absolute maximum ratings for collector-base voltage of 40V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. Typical characteristics include a DC current gain of 170 at 5mA collector current and 160 at 100mA collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    56 views2 pages

    NP N Epitaxial Silicon Transistor: 2W Output Amplifier of Portable Radios in Class B Push-Pull Operation

    Uploaded by

    Jorge José Figueiredo Siqueira
    This document provides specifications for the STC8050 NPN silicon transistor. It is intended for use in class B push-pull operation in 2W output amplifiers for portable radios. Key parameters include a collector current of 1.5A and power dissipation of 2W at a case temperature of 25°C. The transistor has absolute maximum ratings for collector-base voltage of 40V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. Typical characteristics include a DC current gain of 170 at 5mA collector current and 160 at 100mA collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    S

    STC8050
    0 NPN Silicon Transistor

    2W Output Amplifier of Portable Radios in


    Class B Push-pull Operation.
    • Complimentary to STC8550
    • Collector Current: IC=1.5A
    • Collector Power Dissipation: PC=2W (TC=25°C)

    1 TO-92

    1. Emitter 2. Base 3. Collector

    NPN Epitaxial Silicon Transistor


    Absolute Maximum Ratings Ta=25°C unless otherwise noted
    Symbol Parameter Ratings Units
    VCBO Collector-Base Voltage 40 V
    VCEO Collector-Emitter Voltage 40 V
    VEBO Emitter-Base Voltage 6 V
    IC Collector Current 1.5 A
    PC Collector Power Dissipation 1 W
    TJ Junction Temperature 150 °C
    TSTG Storage Temperature 65 ~ 150 °C

    Electrical Characteristics Ta=25°C unless otherwise noted


    Symbol Parameter Test Condition Min. Typ. Max. Units
    BVCBO Collector-Base Breakdown Voltage IC= 100µA, IE=0 40 V
    BVCEO Collector-Emitter Breakdown Voltage IC= 2mA, IB=0 40 V
    BVEBO Emitter-Base Breakdown Voltage IE= 100µA, IC=0 6 V
    ICBO Collector Cut-off Current VCB= 35V, IE=0 100 nA
    IEBO Emitter Cut-off Current VEB= 6V, IC=0 100 nA
    hFE1 DC Current Gain VCE= 1V, IC= 5mA 45 170
    hFE2 VCE= 1V, IC= 100mA 85 160 300
    hFE3 VCE= 1V, IC= 800mA 40 80
    VCE (sat) Collector-Emitter Saturation Voltage IC= 800mA, IB= 80mA 0.28 0.5 V
    VBE (sat) Base-Emitter Saturation Voltage IC= 800mA, IB= 80mA 0.98 1.2 V
    VBE (on) Base-Emitter on Voltage VCE= 1V, IC= 10mA 0.66 1.0 V
    Cob Output Capacitance VCB= 10V, IE=0 15 pF
    f=1MHz
    fT Current Gain Bandwidth Product VCE= 10V, IC= -50mA 100 200 MHz

    hFEClassification
    Classification A B C
    hFE2 85 ~ 160 120 ~ 200 200 ~ 400
    Typical Characteristics STC8050

    -0.5 1000
    VCE = -1V
    IB=-4.0mA
    IC[mA], COLLECTOR CURRENT

    -0.4 IB=-3.5mA

    hFE, DC CURRENT GAIN


    IB=-3.0mA 100
    -0.3 IB=-2.5mA

    IB=-2.0mA
    -0.2 IB=-1.5mA
    10

    IB=-1.0mA
    -0.1

    IB=-0.5mA

    1
    -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000

    VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

    Figure 1. Static Characteristic Figure 2. DC current Gain

    -10000 -100
    VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

    IC=10IB VCE = -1V


    IC[mA], COLLECTOR CURRENT

    -1000 -10

    VBE(sat)

    -100 -1

    VCE(sat)

    -10 -0.1
    -0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

    IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

    Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage


    Collector-Emitter Saturation Voltage
    fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

    100 1000
    f=1MHz VCE=-10V
    IE=0
    Cob[pF], CAPACITANCE

    10 100

    1 10
    -1 -10 -100 -1000 -1 -10 -100 -1000

    VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

    Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

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