BUK9226-75A: 1. Product Profile

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BUK9226-75A

N-channel TrenchMOS logic level FET


Rev. 02 — 27 January 2011 Product data sheet

1. Product profile

1.1 General description


Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits


„ AEC Q101 compliant „ Suitable for logic level gate drive
„ Low conduction losses due to low sources
on-state resistance „ Suitable for thermally demanding
environments due to 175 °C rating

1.3 Applications
„ 12 V, 24 V and 42 V loads „ Motors, lamps and solenoids
„ Automotive and general purpose
power switching

1.4 Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V
ID drain current VGS = 5 V; Tmb = 25 °C; - - 45 A
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 114 W
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 29 mΩ
resistance VGS = 10 V; ID = 25 A; Tj = 25 °C - 20.9 24.6 mΩ
VGS = 5 V; ID = 25 A; Tj = 25 °C; - 22.1 26 mΩ
see Figure 13; see Figure 12
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 49 A; Vsup ≤ 75 V; - - 120 mJ
drain-source RGS = 50 Ω; VGS = 5 V;
avalanche energy Tj(init) = 25 °C; unclamped
Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to drain
mbb076 S
2
1 3

SOT428 (DPAK)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK9226-75A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 2 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V
VDGR drain-gate voltage RGS = 20 kΩ - 75 V
VGS gate-source voltage -10 10 V
ID drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; - 45 A
see Figure 3
Tmb = 100 °C; VGS = 5 V; see Figure 1 - 32 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; [1] - 182 A
see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 114 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
VGSM peak gate-source voltage pulsed; tp ≤ 50 µs -15 15 V
Source-drain diode
IS source current Tmb = 25 °C - 45 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 182 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source ID = 49 A; Vsup ≤ 75 V; RGS = 50 Ω; - 120 mJ
avalanche energy VGS = 5 V; Tj(init) = 25 °C; unclamped

[1] Peak drain current is limited by chip, not package.

03aa24 03aa16
120 120

Ider Pder
(%) (%)

80 80

40 40

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a
function of mounting base temperature function of mounting base temperature

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 3 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

03nb19
103

ID
(A)
RDSon = VDS/ID

102 tp = 10 us

100 us

tp
10
P δ= 1 ms
T
D.C.

10 ms
tp t
100 ms
T
1
1 10 102
VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 4 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to see Figure 4 - - 1.3 K/W
mounting base
Rth(j-a) thermal resistance from junction to minimum footprint ; FR4 - 71.4 - K/W
ambient board

03nb20
10

Zth(j-mb)
(K/W)

1
δ = 0.5

0.2
0.1
10−1
0.05
0.02 tp
P δ=
T
10−2
Single Shot

tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1
tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 5 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 75 - - V
voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 70 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 0.5 - - V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C; 1 1.5 2 V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 2.3 V
see Figure 11
IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA
IGSS gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
RDSon drain-source on-state VGS = 5 V; ID = 25 A; Tj = 175 °C; - - 54.6 mΩ
resistance see Figure 12; see Figure 13
VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 29 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C - 20.9 24.6 mΩ
VGS = 5 V; ID = 25 A; Tj = 25 °C; - 22.1 26 mΩ
see Figure 13; see Figure 12
Dynamic characteristics
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 2340 3120 pF
Coss output capacitance Tj = 25 °C; see Figure 14 - 319 383 pF
Crss reverse transfer capacitance - 215 295 pF
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; - 24 - ns
tr rise time RG(ext) = 10 Ω; Tj = 25 °C - 141 - ns
td(off) turn-off delay time - 142 - ns
tf fall time - 108 - ns
LD internal drain inductance measured from drain lead from - 2.5 - nH
package to centre of die ; Tj = 25 °C
LS internal source inductance measured from source lead from - 7.5 - nH
package to source bond pad ;
Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.85 1.2 V
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = 100 A/µs; - 49 - ns
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; - 115 - nC
VGS = -10 V; VDS = 30 V; Tj = 25 °C

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 6 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

03nb16 03nb15
ID 200 8
35
(A) VGS = 10(V) RDSon
180 7 (mOhm)
6
160 5 30

140

120 4 25

100

80 20

60 3

40 15

20
2
0 10
0 2 4 6 8 10 2 4 6 8 10
VDS (V) VGS(V)

Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values

03aa36 03nb13
10-1 60
ID gfs
(A) (S)
50
10-2

40
10-3
min typ max
30

10-4
20

10-5
10

10-6 0
0 1 2 3 0 20 40 60 80
VGS (V) ID (A)

Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of


gate-source voltage drain current; typical values

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 7 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

03nb14 03nb12
45 VGS 5
ID
(A) (V)
40 4.5

35 4

3.5
30 VDS = 14(V) VDS = 60(V)
3
25
2.5
20
2
15
1.5
10
1
Tj = 175 °C Tj = 25 °C
5 0.5

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50
VGS(V) QG(nC)

Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values gate charge; typical values

03aa33 03nb17
2.5
RDSon 60
VGS(th) (mΩ) 3.6
55 VGS = 3 (V) 3.4 3.8
(V) 5
3.2 4
2 max 50

45

1.5 typ 40

35

1 min 30

25

0.5 20

15

0 10
-60 0 60 120 180 10 30 50 70 90 110 130 150 170
Tj (°C) ID (A)

Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature of drain current; typical values

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 8 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

03nb25 03nb18
2.4 6000
C
(pF)
a
5000 Ciss

1.6 4000
Coss

3000 C
rss

0.8 2000

1000

0 0
−60 0 60 120 180 10−2 10−1 1 10 102
Tj (°C) VDS(V)

Fig 13. Normalized drain-source on-state resistance Fig 14. Input, output and reverse transfer capacitances
factor as a function of junction temperature as a function of drain-source voltage; typical
values

03nb11
60
IS
(A)
50

40

30

20
Tj = 175 °C Tj = 25 °C
10

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 9 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428

E A A

b2 A1 E1

mounting
base D2

D1
HD

2
L2 L
1 3 L1

b1 b w M A c

e1

0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)


D2 E1 L1 y
UNIT A A1 b b1 b2 c D1 E e e1 HD L L2 w
min min min max
2.38 0.93 0.89 1.1 5.46 0.56 6.22 4.0 6.73 4.45 10.4 2.95 0.5 0.9
mm 2.285 4.57 0.2 0.2
2.22 0.46 0.71 0.9 5.00 0.20 5.98 6.47 9.6 2.55 0.5

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
06-02-14
SOT428 TO-252 SC-63
06-03-16

Fig 16. Package outline SOT428 (DPAK)

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 10 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK9226-75A v.2 20110127 Product data sheet - BUK9226_75A v.1
Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK9226_75A v.1 20001010 Product specification - -

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Product data sheet Rev. 02 — 27 January 2011 11 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions Suitability for use in automotive applications — This Nexperia


product has been qualified for use in automotive
Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be
internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment,
modifications or additions. Nexperia does not give any nor in applications where failure or malfunction of a Nexperia
representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or
information included herein and shall have no liability for the consequences of severe property or environmental damage. Nexperia accepts no
use of such information. liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk.
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and Quick reference data — The Quick reference data is an extract of the
full information. For detailed and full information see the relevant full data product data given in the Limiting values and Characteristics sections of this
sheet, which is available on request via the local Nexperia sales document, and as such is not complete, exhaustive or legally binding.
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail. Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
Product specification — The information and data provided in a Product representation or warranty that such applications will be suitable for the
data sheet shall define the specification of the product as agreed between specified use without further testing or modification.
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however, Customers are responsible for the design and operation of their applications
shall an agreement be valid in which the Nexperia product is and products using Nexperia products, and Nexperia
deemed to offer functions and qualities beyond those described in the accepts no liability for any assistance with applications or customer product
Product data sheet. design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
Limited warranty and liability — Information in this document is believed to applications and products.
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or Nexperia does not accept any liability related to any default,
completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the
consequences of use of such information. customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
In no event shall Nexperia be liable for any indirect, incidental, testing for the customer’s applications and products using Nexperia
punitive, special or consequential damages (including - without limitation - lost products in order to avoid a default of the applications and
profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party
replacement of any products or rework charges) whether or not such customer(s). Nexperia does not accept any liability in this respect.
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper)
whatsoever, Nexperia’s aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in
customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the
with the Terms and conditions of commercial sale of Nexperia. Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
Right to make changes — Nexperia reserves the right to make the quality and reliability of the device.
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without Terms and conditions of commercial sale — Nexperia
notice. This document supersedes and replaces all information supplied prior products are sold subject to the general terms and conditions of commercial
to the publication hereof. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual

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Product data sheet Rev. 02 — 27 January 2011 12 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

agreement is concluded only the terms and conditions of the respective


agreement shall apply. Nexperia hereby expressly objects to
9.4 Trademarks
applying the customer’s general terms and conditions with regard to the Notice: All referenced brands, product names, service names and trademarks
purchase of Nexperia products by customer. are the property of their respective owners.

No offer to sell or license — Nothing in this document may be interpreted or


construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.

10. Contact information


For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: [email protected]

BUK9226-75A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 02 — 27 January 2011 13 of 14


Nexperia BUK9226-75A
N-channel TrenchMOS logic level FET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

© Nexperia B.V. 2017. All rights reserved


For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 January 2011

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