Buk98180 100a
Buk98180 100a
Buk98180 100a
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
3. Applications
• 12 V, 24 V and 42 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C - 147 173 mΩ
resistance
VGS = 4.5 V; ID = 5 A; Tj = 25 °C - - 201 mΩ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 4 D
2 D drain
G
3 S source
1 2 3
4 D drain mbb076 S
SC-73 (SOT223)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK98180-100A SC-73 plastic surface-mounted package with increased SOT223
heatsink; 4 leads
BUK98180-100A/CU SC-73 plastic surface-mounted package with increased SOT223
heatsink; 4 leads
7. Marking
Table 4. Marking codes
Type number Marking code
BUK98180-100A 918010
BUK98180-100A/CU 918010
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 100 V
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Source-drain diode
IS source current Tsp = 25 °C - 4.6 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source ID = 4 A; Vsup ≤ 100 V; RGS = 50 Ω; - 16 mJ
avalanche energy VGS = 5 V; Tj(init) = 25 °C; unclamped
03aa17 03aa25
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
0 50 100 150 200 0 50 100 150 200
Tsp (°C) Tsp (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of solder point temperature function of solder point temperature
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03nc34
102
ID
(A)
RDSon = VDS/ID
10 tp = 10 µs
100 µs
1 1 ms
tp D.C. 10 ms
P δ=
T
100 ms
10- 1
tp t
T
10- 2
10- 1 1 10 102 103
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance Fig. 4 - - 15 K/W
from junction to solder
point
Rth(j-a) thermal resistance - 120 - K/W
from junction to
ambient
03nc35
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1
0.05
0.02 tp
P δ=
T
10- 1
Single Shot t
tp
T
10- 2
10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 12
tp (s)
Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration
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10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 89 - - V
tf fall time - 25 - ns
Source-drain diode
VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.85 1.2 V
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03nc31 03nc30
25 180
VGS (V) = 10 RDSon
ID
(mΩ)
(A) 5
175
20 4
170
15
165
160
10
3 155
5
150
2.2
0 145
0 2 4 6 8 10 4 6 8 10
VDS (V) VGS (V)
Fig. 5. Output characteristics: drain current as a Fig. 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values
03aa36 03nc28
10-1 18
gfs
ID (S)
(A) 16
-2
10
14
12
10-3
10
min typ max
8
10-4
6
4
10-5
2
10-6 0
0 1 2 3 0 5 10 15
VGS (V) ID (A)
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03nc29 03nc27
18 5
ID
(A) VGS
16 (V)
14 4
VDD = 14 V VDD = 80 V
12
3
10
8
2
6
4
1
Tj = 150 °C Tj = 25 °C
2
0 0
0 1 2 3 4 0 2 4 6 8 10
VGS (V) QG (nC)
Fig. 9. Transfer characteristics: drain current as a Fig. 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values gate charge; typical values
03aa33 03nc32
2.5 250
VGS(th) RDSon
VGS (V) = 3
(V) (mΩ) 3.2
2 max
200
3.4
1.5 typ 3.6
3.8
4
1 min 5
150
0.5
0 100
-60 0 60 120 180 0 2 4 6 8 10 12
Tj (° C) ID (A)
Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Drain-source on-state resistance as a function
junction temperature of drain current; typical values
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03ne90 03nc33
2.4 1200
a C (pF)
2.0 1000 Ciss
1.6 800
Coss
0.8 400
0.4 200
0 0
- 60 20 100 180 10- 2 10- 1 1 10 102
Tj (°C) VDS (V)
Fig. 13. Normalized drain-source on-state resistance Fig. 14. Input, output and reverse transfer capacitances
factor as a function of junction temperature as a function of drain-source voltage; typical
values
03nc26
15
IS
(A)
10
Tj = 150 °C Tj = 25 °C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
Fig. 15. Reverse diode current as a function of reverse diode voltage; typical value
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D B E A X
y
HE v M A
b1
A1
1 2 3 Lp
e1 bp w M B detail X
0 2 4 mm
scale
UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y
1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95
mm 4.6 2.3 0.2 0.1 0.1
1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85
04-11-10
SOT223 SC-73
06-03-16
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BUK98180-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 5
11 Package outline ..................................................... 9
12 Legal information .................................................10
12.1 Data sheet status ............................................... 10
12.2 Definitions ...........................................................10
12.3 Disclaimers .........................................................10
12.4 Trademarks ........................................................ 11
BUK98180-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved