Department of Electronics & Telecom

EngineeringEDC-1 Question Bank for IA-02 A.Y

2021-22
Questions

1 Input impedance Zin for a voltage divider CE Amplifier is given as

Zin=R1||R2||re
Zin=R1||R2
Zin=R1||R2||rπ
Zin=R1||rπ

2. In a bypassed common-emitter amplifier with voltage-divider bias, , R1 = 33 kΩ,

R2= 15kΩ and rπ = 68 kΩ. The total ac input resistance is
68 kΩ
22.2 kΩ
12.3 kΩ
8.95 kΩ

3. If the value of collector resistor Rc is increased, the output voltage

a Increase
b Decrease
c Remains the same
d zero
4 For a common-emitter amplifier, RC = 1.0kΩ, RE = 390Ω, re’ = 15Ω, and βac = 75,
Assuming that RE is completely bypassed at the operating frequency, the voltage
gain is
66.7
2.56
2.47
75
5 In a CE amplifier, the capacitor placed across emitter resistor RE is called

Input Coupling capacitor

Bypass Capacitor
Attenuator
Output Coupling capacitor
6 A certain common-emitter amplifier has a voltage gain of 100. If the emitter
bypass capacitor is removed,
the voltage gain will decrease
the voltage gain will increase
the circuit will become unstable
the Q-point will shift
7 The input resistance of a common-base amplifier is
very low
very high
the same as a CE
the same as a CC
8 Determine the bypass capacitance value at a minimum frequency of 200 Hz if
RE=560Ω.
 Department of Electronics & Telecom
10uF
25uF EngineeringEDC-1 Question Bank for IA-02 A.Y
14.2uF 2021-22
5uF
9 The capacitive reactance, XC, of the bypass capacitor should be at least
times smaller than RE at the minimum frequency for which the amplifier must
operate.
10
100
50
500
10 Which h parameter is equivalent to βac?
hie
hfe
hoe
hre
.11 Determine the output impedance of the bypassed CE amplifier circuit. Given
RB=470kΩ, Rc=2.2kΩ, RE=0.56kΩ, RL=400kΩ, rπ=718.89Ω and β=120.
a. Zo = 0.56kΩ
b. Zo = 470kΩ
c. Zo = 400kΩ
d. Zo =2.2kΩ
12 Form factor of bridge rectifier is
1.11
3.14
0.67
0.81
13 Determine the gain of an un-bypassed CE amplifier, if the following component
values and parameters are given as: R1=51.2kΩ, R2=9.6kΩ, Rc=2kΩ, RE=400Ω,
RL=10kΩ, rπ=1.42kΩ and β=100.
a. Av=3.99
b. Av=10.99
c. Av=13.99
d. Av=23.99
14 Determine the input impedance of an un-bypassed CE amplifier, if the following
component values and parameters are given as: RB=470kΩ, , Rc=2.2kΩ,
RE=0.56kΩ, rπ=718.89Ω and β=120
a Zin = 10 kΩ
b Zin = 59.77 kΩ
c Zin = 30.77 kΩ
d Zin = 56.98 kΩ
15 FET is a device
a Voltage Controlled
b Current Controlled
c Impedance Controlled
d Admittance Controlled
 Department of Electronics & Telecom
EngineeringEDC-1 Question Bank for IA-02 A.Y
2021-22
16 In drain characteristics, for VGS=0 V, the value of VDS at which ID becomes
essentially constant is .
a source voltage
b drain voltage
c pinch off voltage
d gate voltage
17 The JFET always operates with a -------------- biased gate-to-source pn junction.
a forward
b reverse
c inverse
d zero
18 The pinch off voltage of JFET is 5V. What is its cut off voltage?
a 2.5V
b 3V
c 4V
d 5V
19 If a MOSFET is to be used in the making of an amplifier then it must work in
a Cut-off region
b Triode region
c Saturation region
d Both cut-off and triode region can be used
20 The MOSFET in the following circuit is in which configuration?

a Common Source (CS)

b Common Gate (CG)
c Common Drain (CD)
d Common Base (CB

21 For MOSFET is to be used as a switch then it must operate in

a Cut-off region
b Triode region/ ohmic region
c Saturation region
d Both cut-off and triode region/ ohmic region
22 For a p channel MOSFET which of the following is not true?
a The source and drain are a p type semiconductor
 Department of Electronics & Telecom
EngineeringEDC-1 Question Bank for IA-02 A.Y
2021-22
b The induced channel is p type region which is induced by applying a positive
potential to the gate
c The substrate is a n type semiconductor
d The induced channel is p type region which is induced by applying a negative
potential to the gate
23 The MOSFET in the following circuit is in which configuration?

a Common Source (CS)

b Common Gate (CG)
c Common Drain (CD)
d Common Base (CB

24 The MOSFET in the following circuit is in which configuration?

a Common Source (CS)

b Common Gate (CG)
c Common Drain (CD)
d Common Base (CB

25 For NMOS transistor which of the following is not true?

a The substrate is of p-type semiconductor
b Inversion layer or induced channel is of n type
c Threshold voltage is negative
d Threshold voltage is positive
26 What is the value of drain current when Vgs=pinch off voltage?
a 0A
 Department of Electronics Engineering
EDC-1 Question Bank for IA-02 A.Y 2021-22

b 1A
c 2A
d Cannot be determined
27 Comparing the size of BJT and FET, choose the correct statement?
a BJT is larger than the FET
b BJT is smaller than the FET
c Both are of same size
d Depends on application
28 The Shockley equation is
a) ID = (1 – Vgs/Vp)2
b) ID = IDSS (1 – Vgs/Vp)2
c) ID = IDSS (1 – Vgs/Vp)
d) ID = IDSS (1 + Vgs/Vp)2
29 The MOSFET is almost ideal as switching device because
a It has longer life
b It works progressively
c It consumes low power
d It has linear characteristics
30 The input gate current of a FET is
a A few micro-amperes
b A few milli-amperes
c A few amperes
d Negligiable

31 A common-emitter amplifier has voltage, current, and power gains, but a

relatively input resistance.
Low , high
High, low
High, high
Low, low
32 A JFET is also called transistor
a Bipolar
b unipolar
c unijunction
d heterojunction

33 The input control parameter of a JFET is

a gate current
b source voltage
c drain voltage
d gate voltage

34 When drain voltage is equal to pinch-off voltage in a JFET, the depletion layers

a almost touch each other

b have large gap
 Department of Electronics Engineering
EDC-1 Question Bank for IA-02 A.Y 2021-22

c have moderate gap

d none of the above
35 In a JFET, IDSS is known as
a drain to source current
b drain to source current with gate shorted
c drain to source current with gate open
d Gate to source current
36 Which of the following devices has the highest input impedance?
a JFET
b MOSFET
c Crystal diode
d ordinary transistor
37 A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA
and VGS(off) = -5 V. The value of the drain current is
a 20 mA
b 0 mA
c 40 mA
d 10 mA
38 A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain current is

a 0 mA
b ID(on)
c maximum
d IDSS
39 Input impedance of a MOSFET is
a Low
b high
c Same as BJT
d zero

40 The can be operated in two modes : Depletion mode and

enhancement mode
a BJT
b JFET
c D-MOSFET
d E-MOSFET
41 The datasheet for a 2N7002 E-MOSFET gives ID(on) 500 mA at VGS(on) 10 V and
VGS(th) 1 V. Determine the drain current for VGS = 5 V.
a 50mA
b 98.7mA
c 8mA
d 25mA
42 A D-MOSFET can operate with
a positive, or negative gate-to-source voltage
a zero, or negative gate-to-source voltage
a zero, positive, or negative gate-to-source voltage
 Department of Electronics Engineering
EDC-1 Question Bank for IA-02 A.Y 2021-22

a zero, positive gate-to-source voltage

43 IDSS is the constant drain current when . This is true for both JFETs and
DMOSFETs
a VGS=0V
b VGS>0V
c VGS<0V
d VGS not = 0V
44 Efficiency of center tapped full wave rectifier is
81.2%
50%
40.6%
45.3%

45 For levels of VGS > VT, the drain current is related to the applied gate-to-source
voltage by the following nonlinear relationship:
a ID= k(VGS - VT)2
b ID= k(VGS - VT)
c ID= (VGS - VT)2
d ID= k(VDS - VT)2
46 For a JFET when will maximum current flows?
a VGS = 0V
b VGS = 0V and VDS >= |Vp|
c VDS >= |Vp|
d Vp = 0
47 To use FET as a voltage-controlled resistor, in which region it should operate?
a Ohmic region
b Cut off
c Saturation
d cut off and saturation
48 For an n-channel FET, What is the direction of current flow?
a Source to Drain
b Drain to source
c Gate to source
d Gate to drain
49 What is the peak inverse voltage across diode for a center tapped full wave
rectifier?
Vm
2Vm
Vm/2
Vm/1.44
50 The value of inductance in LC filter at which the load current does not fall to zero
is called ---------
Peak inductance
Critical inductance
Cut in inductance
Damping inductance