PD - 97046A

IRF3805PbF
IRF3805SPbF
Features
IRF3805LPbF
l Advanced Process Technology HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature D
l Fast Switching VDSS = 55V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free RDS(on) = 3.3mΩ
G
Description
This HEXFET® Power MOSFET utilizes the latest ID = 75A
S
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB D2Pak TO-262
IRF3805PbF IRF3805SPbF IRF3805LPbF
Absolute Maximum Ratings
Parameter Max. Units
I D @ TC = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) 210
I D @ TC = 100°C Continuous Drain Current, V GS @ 10V (Silicon Limited) 150 A
I D @ TC = 25°C Continuous Drain Current, V GS @ 10V (Package limited) 75
I DM Pulsed Drain Current c 890
P D @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V GS Gate-to-Source Voltage ± 20 V
E AS (Thermally limited) Single Pulse Avalanche Energy d 650 mJ
E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 940
I AR Avalanche Current c See Fig.12a, 12b, 15, 16 A
E AR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
T STG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw i y
10 lbf in (1.1N m)y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 0.5 l °C/W
RθCS Case-to-Sink, Flat Greased Surface i 0.50 –––
RθJA Junction-to-Ambient ik ––– 62
RθJA Junction-to-Ambient (PCB Mount) jk ––– 40
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IRF3805/S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 2.6 3.3 mΩ VGS = 10V, ID = 75A e
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 75 ––– ––– V VDS = 25V, ID = 75A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 190 290 ID = 75A
Qgs Gate-to-Source Charge ––– 52 ––– nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 72 ––– VGS = 10V e
td(on) Turn-On Delay Time ––– 150 ––– VDD = 28V
tr Rise Time ––– 20 ––– ID = 75A
td(off) Turn-Off Delay Time ––– 93 ––– ns RG = 2.6 Ω
tf Fall Time ––– 87 ––– VGS = 10V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact
Ciss Input Capacitance ––– 7960 ––– VGS = 0V
Coss Output Capacitance ––– 1260 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 630 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 4400 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 980 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1550 ––– VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 75 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 890 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V e
trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = 75A, VDD = 28V
Qrr Reverse Recovery Charge ––– 47 71 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF3805/S/LPbF

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100

4.5V
10

4.5V
≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 200
TJ = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current(Α)

TJ = 175°C
160
100.0

TJ = 175°C
120
10.0

TJ = 25°C
80

1.0

VDS = 20V 40
VDS = 10V
≤ 60µs PULSE WIDTH
0.1 380µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 0
0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current
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 IRF3805/S/LPbF

14000 20
VGS = 0V, f = 1 MHZ
ID= 75A VDS = 44V
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)

12000 Crss = Cgd VDS= 28V
16
Coss = Cds + Cgd
10000
C, Capacitance (pF)

Ciss 12
8000

6000 8

4000
4
Coss
2000
Crss
0
0
0 50 100 150 200 250 300
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)

TJ = 175°C
ISD , Reverse Drain Current (A)

1000
100.0
100µsec
100

10.0 10msec
10 1msec
TJ = 25°C

1.0
1 Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000

VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF3805/S/LPbF

240 2.0
ID = 75A

RDS(on) , Drain-to-Source On Resistance

LIMITED BY PACKAGE
VGS = 10V
200
ID , Drain Current (A)

160 1.5

(Normalized)
120

80 1.0

40

0
0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TC , Case Temperature (°C)
TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

D = 0.50
Thermal Response ( ZthJC )

0.1 0.20
0.10
0.05 R1 R2
R1 R2 Ri (°C/W) τi (sec)
0.01 0.02 τJ
0.01 τJ
τC
τ 0.2653 0.001016
τ1 τ2
τ1 τ2 0.2347 0.012816
Ci= τi/Ri
Ci i/Ri
0.001

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3805/S/LPbF

2000
15V

EAS, Single Pulse Avalanche Energy (mJ)

I D
TOP 15A
1600 20A
L DRIVER
VDS BOTTOM 75A

RG D.U.T 1200
+
V
- DD
IAS A
20V
VGS
tp 0.01Ω 800

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS 400

tp

0
25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.5
VGS(th) Gate threshold Voltage (V)

VG 4.0
ID = 250µA
3.5
Charge
Fig 13a. Basic Gate Charge Waveform 3.0
Current Regulator
Same Type as D.U.T.
2.5
50KΩ

12V .2µF
.3µF 2.0
+
V
D.U.T. - DS
1.5
VGS -75 -50 -25 0 25 50 75 100 125 150 175

3mA TJ , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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 IRF3805/S/LPbF

10000

Duty Cycle = Single Pulse

1000 Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
0.01 case should Tj be allowed to
100
exceed Tjmax
0.05
0.10
10

1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

800 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = 75A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

600 temperature far in excess of T jmax. This is validated for

every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
400 3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
200
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav
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IRF3805/S/LPbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
- „ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
V DS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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 IRF3805/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789 INT ERNAT IONAL PART NUMBER
AS S EMBLED ON WW 19, 2000 RECT IFIER
IN T HE AS S E MBLY LINE "C" LOGO
DAT E CODE
Note: "P" in as s embly line pos ition YEAR 0 = 2000
AS S EMBLY
indicates "Lead - Free" LOT CODE WEEK 19
LINE C

TO-220AB package is not recommended for Surface Mount Application

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF3805/S/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

T HIS IS AN IRF530S WITH PART NUMBER

LOT CODE 8024 INT ERNAT IONAL
ASSEMBLED ON WW 02, 2000 RECT IF IER F 530S
IN THE ASS EMBLY LINE "L" LOGO
DAT E CODE
YE AR 0 = 2000
ASSE MBLY
LOT CODE WEE K 02
LINE L

OR
PART NUMBER
INT ERNAT IONAL
RECT IF IER F 530S
LOGO DAT E CODE
P = DESIGNATES LEAD - F REE
PRODUCT (OPT IONAL)
ASSE MBLY
YE AR 0 = 2000
LOT CODE
WEEK 02
A = ASS EMBLY SITE CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF3805/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNAT IONAL
AS SEMBLED ON WW 19, 1997
RE CTIF IER
IN T HE AS SEMBLY LINE "C" LOGO
Note: "P" in ass embly line DAT E CODE
pos ition indicates "Lead-F ree" YEAR 7 = 1997
ASSE MBLY
LOT CODE WEEK 19
LINE C

OR
PART NUMBER
INTE RNAT IONAL
RECT IFIER
LOGO
DATE CODE
P = DESIGNAT ES LEAD-FREE
ASS EMBLY PRODUCT (OPTIONAL)
LOT CODE YE AR 7 = 1997
WE EK 19
A = ASSEMBLY SIT E CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF3805/S/LPbF
D2Pak Tape & Reel Information
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
3

Notes:
 Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.23mH † This value determined from sample failure population. 100%
RG = 25Ω, IAS = 75A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. ‡ This is only applied to TO-220AB pakcage.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR-
„ Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering
same charging time as Coss while VDS is rising
techniques refer to application note #AN-994.
from 0 to 80% VDSS .
‰ Rθ is measured at TJ of approximately 90°C.
Š TO-220 device will have an Rth of 0.45°C/W.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
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