High Frequency Model For MOSFET
High Frequency Model For MOSFET
High Frequency Model For MOSFET
• Finite time required to charge and discharge the various internal capacitances is not
accounted
• The use of these models would predict constant amplifier gains independent of frequency
• In fact, the gain of every MOSFET amplifier falls off at some high frequency
• To be able to predict these results, the MOSFET model must be augmented by including
internal capacitances
MOSFET Internal capacitances
• There are two types of internal capacitances in MOSFET
• Gate capacitive effect
• The gate electrode (polysilicon) forms a parallel-plate capacitor with the
channel, with the oxide layer serving as the capacitor dielectric
• By the n+ source region (also called the source diffusion) and p-type
substrate
2/18/2021 • By the n+ drain region (the drain diffusion) and the substrate 25
Fig. Physical structure of enhancement-type NMOS transistor
• These two capacitive effects can be modeled by including capacitances in the
MOSFET model between its four terminals, G, D, S, and B (Body)
• There will be five capacitances in total: Cgs, Cgd, Cgb, Csb, and Cdb where the
subscripts indicate the location of the capacitances in the model
Gate capacitive effect
• Gate capacitive effect is Modeled by three capacitances
(Saturation region)
(Cutoff region)
• This is the capacitance that results from the fact that the source and drain diffusions
extend slightly under the gate oxide
• We have assumed that for both junctions, the grading coefficient m = 1/2
• Formulas for the junction capacitances in Eqns. (21) and (22) assume small signal
operation
• Small-signal model of the MOSFET, including the four capacitances Cgs, Cgd, Csb,
and Cdb
• In this model, Cgd, although small, plays a significant role in determining the high-
frequency response of amplifiers and thus must be kept in the model
Fig. Equivalent circuit for the case in which the source is connected to the body
• MOSFET hybrid- model with the source as the common terminal between the
input and output ports
• Cgd is small, at the frequencies of interest, the second term in this equation can be
neglected
• For physical frequencies s = j, the magnitude of the current gain becomes unity
at the frequency fT = T/2
• Typically, fT -ranges from about 100 MHz for the older technologies (e.g., a 5-m
CMOS process) to many GHz for newer high-speed technologies (e.g., a 0.13-
m CMOS process)