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Module 4 CMOS Logic

A MOS transistor consists of a semiconductor material like silicon with a thin insulating oxide layer and a metal gate electrode. It has three terminals - the source, the gate, and the drain. Applying a positive voltage to the gate creates a channel for electrons to flow between the source and drain. Complementary MOS (CMOS) circuits use both NMOS and PMOS transistors on the same substrate to build logic gates with low power consumption.

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Jessie Tess Tolentino
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98 views18 pages

Module 4 CMOS Logic

A MOS transistor consists of a semiconductor material like silicon with a thin insulating oxide layer and a metal gate electrode. It has three terminals - the source, the gate, and the drain. Applying a positive voltage to the gate creates a channel for electrons to flow between the source and drain. Complementary MOS (CMOS) circuits use both NMOS and PMOS transistors on the same substrate to build logic gates with low power consumption.

Uploaded by

Jessie Tess Tolentino
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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What is a MOS

Transistor?

 It consists of semiconductor material


(silicon) on which is grown a thin layer
(1...50 nm) of insulating oxide, topped
by a gate electrode.

❑ Gate electrode
• was originally metal, specifically
aluminium, but is now more commonly
a layer of polycrystalline silicon (referred
to as polysilicon).
MOS Capacitor
Metal Oxide Semiconductor
Field Effect Transistor

Simplified Schematic of a
MOSFET
n-channel MOSFET p-channelMOSFET
Substrate(Channel) p N
GateElectrode n+ p+
SourceandDrain n+ p+
Metal Oxide Semiconductor
Field Effect Transistor

 MOSFET Symbols
MOS Transistor

 Transistors consist of three terminals; the


source, the gate, and the drain

 Both the source and the drain are


negatively-charged and sit on a positively-
charged well of p-silicon
MOS Transistor

 When positive voltage is applied to the


gate, electrons in the p-silicon are attracted
to the area under the gate forming an
electron channel between the source and
the drain.

 When positive voltage is applied to the


drain, the electrons are pulled from the
source to the drain.
MOS Transistor

 If the voltage at the gate is removed,


electrons aren't attracted to the area
between the source and drain. The
pathway is broken and the transistor
is turned off
Complementary MOS
Transistors (CMOS)

 If one were to fabricate PMOS and


NMOS devices on the same substrate
to build complementary MOS (CMOS)
circuits, there would be a basic
inconsistency in substrates
VDD

A Y = A'

GND
Complementary MOS
Transistors (CMOS)
 A variant of MOS transistor uses both
c.hannel and p-channel devices to
make the fundamental building block
❑ as inverter or not gate
 Its advantages:
❑ lower power consumption
❑ symmetry of design
 If in = +, n-channel device is on, p-
channel is off, out is connected to -
 If in = -, n-channel is off, p-channel is
on, out is connected to +
 No current flows through battery in
either case

out
in
N
CMOS Inverter
CMOS Inverter
CMOS NAND Gate
CMOS NAND Gate
CMOS NAND Gate
CMOS NAND Gate
CMOS NOR Gate
CMOS AOI Gates

 AOI (AND-OR-INVERT): Enable the sum-of-


products realization of a Boolean function
in one logic gate.
Example: OUT = A1A2A3+B1B2+C1C2C3
CMOS OAI Gates

 OAI (OR-AND-INVERT): Enable the


product-of-sums realization of a Boolean
function in one logic gate.
Example: OUT = (A1+A2+A3)(B1+B2) C1

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