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Features SOT-23: 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente

This document provides specifications for the C945 NPN plastic encapsulated transistor. It is a 60V, 0.15A, 200mW transistor in an SOT-23 package. Key features include excellent hFE linearity, low noise, and compatibility with the A733 transistor. Electrical characteristics include a DC current gain of 130-400, collector-emitter saturation voltage below 0.3V, and transition frequency above 150MHz.

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27 views2 pages

Features SOT-23: 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente

This document provides specifications for the C945 NPN plastic encapsulated transistor. It is a 60V, 0.15A, 200mW transistor in an SOT-23 package. Key features include excellent hFE linearity, low noise, and compatibility with the A733 transistor. Electrical characteristics include a DC current gain of 130-400, collector-emitter saturation voltage below 0.3V, and transition frequency above 150MHz.

Uploaded by

zenal abid
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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C945

60V, 0.15A, 200mW


Elektronische Bauelemente NPN Plastic Encapsulate Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

SOT-23
FEATURES
 Excellent hFE Linearity A
L
 Low noise 3
 Complementary to A733 3

Top View C B
1
1 2

MARKING K E 2

Product Marking Code


D
C945 CR F G H J

Millimeter Millimeter
PACKAGE INFORMATION REF.
Min. Max.
REF.
Min. Max.
A 2.70 3.04 G - 0.18
Package MPQ LeaderSize B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
SOT-23 3K 7’ inch E 1.78 2.04 L 0.85 1.15
F 0.30 0.50

Collector

CLASSIFICATION OF hFE(1)
Product-Rank C945-L C945-H 
Base
Range 130-200 200-400


Emitter

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage VCBO 60 V
Collector - Emitter Voltage VCEO 50 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 150 mA
Collector Power Dissipation PC 200 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 ℃

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)


PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage IC =100µA, IE =0 V(BR)CBO 60 - - V
Collector-Emitter Breakdown Voltage IC = 1mA, IB =0 V(BR)CEO 50 - - V
Emitter-Base Breakdown Voltage IE = 0.1µA, IC =0 V(BR)EBO 5 - - V
Collector Cut-Off Current VCB = 60V, IE =0 ICBO - - 0.1 µA
Collector Cut-Off Current VCE = 55V, R =10mΩ ICER - - 0.1 µA
Emitter Cut-Off Current VEB = 5V, IC =0 IEBO - - 0.1 µA
VCE = 6V, IC = 1mA hFE(1) 130 - 400
DC Current Gain
VCE = 6V, IC = 0.1mA hFE(2) 40 - -
Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA VCE(sat) - - 0.3 V
Base-Emitter Saturation Voltage IC = 100mA, IB = 10mA VBE(sat) - - 1 V
Transition frequency VCE = 6V, IC = 10mA, f=30MHz fT 150 - - MHz
Collector output capacitance VCB = 10V, IE=0, f=1MHz Cob - - 3.0 pF
VCE=6V, IC=0.1mA,
Noise figure NF - 4 10 dB
Rg=10kΩ, f=1kMHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

17-Dec-2010 Rev. A Page 1 of 2


C945
60V, 0.15A, 200mW
Elektronische Bauelemente NPN Plastic Encapsulate Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

17-Dec-2010 Rev. A Page 2 of 2

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