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    Feature: Elektronische Bauelemente 200 MW, 150 Ma, 60 V NPN Plastic Encapsulated Transistor

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    Vũ Huy Nhật Minh
    This document provides specifications for an NPN plastic encapsulated transistor. Key details include: - It is an RoHS compliant transistor rated for 200mW power dissipation and 150mA continuous collector current. - Electrical characteristics include a minimum DC current gain of 130, collector-emitter saturation voltage below 0.25V, and transition frequency above 80MHz. - The transistor is marked with identification code "HF" and is packaged in a SOT-23 case.

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    Feature: Elektronische Bauelemente 200 MW, 150 Ma, 60 V NPN Plastic Encapsulated Transistor

    Uploaded by

    Vũ Huy Nhật Minh
    36 views2 pages
    This document provides specifications for an NPN plastic encapsulated transistor. Key details include: - It is an RoHS compliant transistor rated for 200mW power dissipation and 150mA continuous collector current. - Electrical characteristics include a minimum DC current gain of 130, collector-emitter saturation voltage below 0.25V, and transition frequency above 80MHz. - The transistor is marked with identification code "HF" and is packaged in a SOT-23 case.

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    C1815-SeCoS

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    This document provides specifications for an NPN plastic encapsulated transistor. Key details include: - It is an RoHS compliant transistor rated for 200mW power dissipation and 150mA continuous collector current. - Electrical characteristics include a minimum DC current gain of 130, collector-emitter saturation voltage below 0.25V, and transition frequency above 80MHz. - The transistor is marked with identification code "HF" and is packaged in a SOT-23 case.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    36 views2 pages

    Feature: Elektronische Bauelemente 200 MW, 150 Ma, 60 V NPN Plastic Encapsulated Transistor

    Uploaded by

    Vũ Huy Nhật Minh
    This document provides specifications for an NPN plastic encapsulated transistor. Key details include: - It is an RoHS compliant transistor rated for 200mW power dissipation and 150mA continuous collector current. - Electrical characteristics include a minimum DC current gain of 130, collector-emitter saturation voltage below 0.25V, and transition frequency above 80MHz. - The transistor is marked with identification code "HF" and is packaged in a SOT-23 case.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    C1815

    200 mW, 150 mA, 60 V


    Elektronische Bauelemente NPN Plastic Encapsulated Transistor

    RoHS Compliant Product


    A suffix of “-C” specifies halogen & lead-free
    SOT-23

    FEATURE
    A
    L
    Power Dissipation 3
    3

    Top View C B
    1
    1 2

    K E 2

    Collector
    MARKING: HF 3 D

    F G H J

    1
    Base Millimeter Millimeter
    REF. REF.

    2
    Min. Max. Min. Max.
    A 2.70 3.04 G - 0.18
    B 2.10 2.80 H 0.40 0.60
    Emitter C 1.20 1.60 J 0.08 0.20
    D 0.89 1.40 K 0.6 REF.
    E 1.78 2.04 L 0.85 1.15
    F 0.30 0.50

    ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


    PARAMETER SYMBOL RATING UNIT
    Collector to Base Voltage VCBO 60 V
    Collector to Emitter Voltage VCEO 50 V
    Emitter to Base Voltage VEBO 5 V
    Collector Current - Continuous IC 150 mA
    Collector Power Dissipation Pc 200 mW
    Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C

    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


    PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
    Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100µA, IE = 0A
    Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=0.1mA, IB = 0A
    Collector Cut-Off Current ICBO - - 0.1 µA VCB=60 V, IE = 0 A
    Collector Cut-Off Current ICEO 0.1 µA VCE=50 V, IB = 0 A
    Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5 V, IC = 0 A
    DC Current Gain hFE 130 - 400 VCE=6V, IC=2mA
    Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA
    Base to Emitter Saturation Voltage VBE(sat) - - 1 V IC=100mA, IB=10mA
    Transition Frequency fT 80 - - MHz VCE = 10V, IC = 1 mA, f = 30 MHz

    CLASSIFICATION OF hFE
    Rank L H
    Range 130-200 200-400

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    31-Dec-2009 Rev. A Page 1 of 2


    C1815
    200 mW, 150 mA, 60 V
    Elektronische Bauelemente NPN Plastic Encapsulated Transistor

    CHARACTERISTIC CURVES

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    31-Dec-2009 Rev. A Page 2 of 2

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