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    Transistor

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    Iram Mustavi
    The document discusses the bipolar junction transistor (BJT). It describes the BJT as a 3-layer semiconductor device with emitter, base, and collector layers used for amplifying and controlling electrical signals. The document outlines the construction, symbol, operation, biasing configurations, and characteristics of NPN and PNP BJTs. It explains that the BJT uses both holes and electrons as charge carriers and requires forward bias of the emitter-base junction and reverse bias of the base-collector junction to function.

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    Transistor

    Uploaded by

    Iram Mustavi
    13 views23 pages
    The document discusses the bipolar junction transistor (BJT). It describes the BJT as a 3-layer semiconductor device with emitter, base, and collector layers used for amplifying and controlling electrical signals. The document outlines the construction, symbol, operation, biasing configurations, and characteristics of NPN and PNP BJTs. It explains that the BJT uses both holes and electrons as charge carriers and requires forward bias of the emitter-base junction and reverse bias of the base-collector junction to function.

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    The document discusses the bipolar junction transistor (BJT). It describes the BJT as a 3-layer semiconductor device with emitter, base, and collector layers used for amplifying and controlling electrical signals. The document outlines the construction, symbol, operation, biasing configurations, and characteristics of NPN and PNP BJTs. It explains that the BJT uses both holes and electrons as charge carriers and requires forward bias of the emitter-base junction and reverse bias of the base-collector junction to function.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views23 pages

    Transistor

    Uploaded by

    Iram Mustavi
    The document discusses the bipolar junction transistor (BJT). It describes the BJT as a 3-layer semiconductor device with emitter, base, and collector layers used for amplifying and controlling electrical signals. The document outlines the construction, symbol, operation, biasing configurations, and characteristics of NPN and PNP BJTs. It explains that the BJT uses both holes and electrons as charge carriers and requires forward bias of the emitter-base junction and reverse bias of the base-collector junction to function.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 23

    DEPARTMENT OF ELECTRICAL,

    ELECTRONIC AND COMMUNICATION


    ENGINEERING (EECE)
    EECE 173: Electrical and Electronics
    Technology
    Transistor
    Transfer of resistor
    are solid state devices used for amplifying,
    controlling and generating electrical signals.
    Widely used in calculators, radio, satellite
    communication etc
    BJT : Bipolar Junction Transistor
    A bipolar junction transistor is a type of transistor that uses both hole and electron
    charge carriers. It is a current controlled device. Can amplify or magnify a signal.
    Advantages:
     The BJT has a large gain bandwidth.
     It shows better performance at high frequency.
     It has a better voltage gain.
     It can be operated in low or high power applications.
     It has high current density.
     There is a low forward voltage drop.
    Construction:
    3 layers semiconductor diode: Emitter, base and collector.
     2junctions

     Emitter (E): Heavily doped, moderate in size


     Collector ( C ) : Moderately doped. Large in size
     Base (B) : Lightly doped and thin.
    Symbol:
    the arrow direction will
    represent the current flow
    because of the charge
    carriers.
    Electron flows opposite the
    current direction.
    Operation:
    The principle of operation of the two transistor types PNP and NPN,
    is exactly the same the only difference being in their biasing and the
    polarity of the power supply for each type.
    Emitter base must be in forward bias.
    Collector base must be in reverse bias.
    The forward bias of emitter bias junction causes current to flow.
    The emitter current entirely flows in the collector circuit. Therefore,
    circuit current depends on emitter current.
    PNP: NPN:

    VEE = input applied voltage


    Vcc = output applied voltage
    IE : The forward bias causes the electron in n type emitter to flow
    towards base. This constitutes emitter current IE.
    IB : when electron flows through p type base they tend to combine
    with hole. As base is lightly doped and thin therefore only a few (5%)
    combine with holes to constitute IB.
    Ic : The remainder (more than 95%) electron cross over to the
    collector region to create Ic . Thus almost entire emitter current flows
    into collector.
    4 operating region
    Active region : works as an amplifier
    Cutoff: works as an open switch. no current flow.
    Saturation: works as an closed switch.
    Common Base Configuration:
    Input Characteristics: Output Characteristics:
    Common Emitter Config:
    Common Emitter Config:
    Input Characteristics: Output Characteristics:
    Common Collector Config:
    Fixed Bias Config:
    Base Emitter Circuit: Collector Emitter Circuit:
    Emitter Bias Config:
    Base–Emitter Loop : Collector–Emitter Loop

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