BLX14 AdvancedSemiconductor
BLX14 AdvancedSemiconductor
BLX14 AdvancedSemiconductor
Ø .630 NOM
FEATURES: C
F
1/4-28 UNF-2A
MAXIMUM RATINGS H
IC 4.0 A
VCBO 85 V
DIM MINIMUM MAXIMUM
VEBO 4.0 V inches / mm inches / mm
VCEO 36 V B
.545 / 13.84
1.050 / 26.67
.555 / 14.10
C
D .495 / 12.57 .505 / 12.83
PDISS 88 W @ TC = 25 °C E .003 / 0.08 .007 / 0.18
F .830 / 21.08
TJ -65 °C to +200 °C G .185 / 4.70 .198 / 5.03
H .497 / 12.62 .530 / 13.46
TSTG -65 °C to +200 °C
θJC 1.99 °C/W
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 25 mA 85 V
BVCER IC = 25 mA RBE = 5.0 Ω 85 V
BVCEO IC = 50 mA 36 V
BVEBO IE = 10 mA 4.0 V
hFE VCE = 6.0 V IC = 1.4 A 15 100 ---
GP 13 dB
d3 VCE = 28 V ICQ =2.0 A POUT = 15 W (PEP) -40 dB
f = 1.6 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.