BAV70 / BAW56 / BAV99

Diodes

Switching diode
BAV70 / BAW56 / BAV99
∗This product is available only outside of Japan.

zApplication zExternal dimensions (Unit : mm)

Ultra high speed switching

2.9±0.2
0.95 +0.2
1.9±0.2 −0.1
zFeatures 0.95 0.95 0.45±0.1
1) Small surface mounting type. (SSD3) (1) (2)
2) High speed. (trr=1.5ns Typ.) 0~0.1

2.4±0.2
−0.1
1.3+0.2
3) Four types of circuit configurations are available. 0.2Min.
(3)

+0.1
0.15 −0.69
0.4 +0.1
−0.05
zConstruction
Silicon epitaxial planar Each lead has same dimensions

zMarking (Type No.)

Product name Type No.
BAV70 RA4
BAW56 RA1
BAV99 RA7
(Ex.) BAV70
RA4

zEquivalent circuits

BAV70 BAW56 BAV99

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 BAV70 / BAW56 / BAV99
Diodes

zAbsolute maximum ratings (Ta=25°C)

Peak DC Peak Mean Surge Power Junction Storage
reverse reverse forward rectifying current dissipation temperature temperature
Type voltage voltage current current (1µs) (TOTAL) P / N Type
Tj (°C)
VRM (V) VR (V) IFM (mA) IF (mA) Isurge (A) Pd (mW) Tstg (°C)

BAV70 75 70 450 215 4 300 150 −55 to +150 N

BAW56 85 70 450 215 4 225 150 −55 to +150 P
BAV99 85 75 450 215 4 300 150 −55 to +150 N

zElectrical characteristics (Ta=25°C)

Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Type VF (V) Cond. IR (µA) Cond. CT (pF) Cond. trr (ns) Cond.
Max. IF (mA) Max. VR (V) Max. VR (V) f (MHz) Max. VR (V) IF (mA)
BAV70 1.25 150 2.5 70 1.5 0 1 4 10 10
BAW56 1.25 150 1.0 75 2.0 0 1 4 10 10
BAV99 1.25 150 1.0 75 1.5 0 1 4 10 10

zElectrical characteristic curves (Ta=25°C)

125 50 1000
(%)

Ta=100°C
Max.

20
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

100 100 75°C

POWER DISSIPATION : Pd / Pd

10 Ta=85°C
50°C
5 25°C 50°C
75 10
0°C
−30°C 25°C
2
0°C
50 1
1
−25°C
0.5
25 0.1
0.2
0 0.1 0.01
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50
AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V)

Fig.1 Power attenuation curve Fig.2 Forward characteristics Fig.3 Reverse characteristics
(P Type) (P Type)
CAPACITANCE BETWEEN TERMINALS : CT (pF)

50
1000 Ta=100°C f=1MHz

20
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

75°C 4
10 Ta=85°C 100
50°C 50°C
5 25°C
0°C 10 25°C
−30°C
2

1 0°C 2
1 P Type
0.5 −25°C
0.1 N Type
0.2

0.1 0.01 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

Fig.4 Forward characteristics Fig.5 Reverse characteristics Fig.6 Capacitance between

(N Type) (N Type) terminals characteristics

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 BAV70 / BAW56 / BAV99
Diodes

10 0.01µF D.U.T
VR=6V
9
REVERSE RECOVERY TIME : trr (ns)

8
5Ω
PULSE GENERATOR SAMPLING
7 50Ω OSCILLOSCOPE
OUTPUT 50Ω
6

5
4
P Type INPUT
3
2
N Type
1
0 100ns
0 1 2 3 4 5 6 7 8 9 10

FORWARD CURRENT : IF (mA)

OUTPUT trr
Fig.7 Reverse recovery time 0

0.1IR
IR
Fig.8 Reverse recovery time (trr) measurement circuit

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Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0