STB33N60DM2, STP33N60DM2,

STW33N60DM2
N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2
Power MOSFET in D²PAK, TO-220 and TO-247 packages
Datasheet - production data

Features
Order code VDS @ TJmax. RDS(on) max. ID
STB33N60DM2 650 V 0.130 Ω 24 A
STP33N60DM2 650 V 0.130 Ω 24 A
STW33N60DM2 650 V 0.130 Ω 24 A

 Fast-recovery body diode

 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
Figure 1: Internal schematic diagram  Zener-protected

Applications
 Switching applications

Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Order code Marking Package Packing
STB33N60DM2 33N60DM2 D²PAK Tape and reel
STP33N60DM2 33N60DM2 TO-220 Tube
STW33N60DM2 33N60DM2 TO-247 Tube

November 2015 DocID026854 Rev 2 1/20

This is information on a product in full production. www.st.com
Contents STB33N60DM2, STP33N60DM2, STW33N60DM2

Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 D²PAK package information ............................................................ 10
4.2 D²PAK packing information ............................................................. 13
4.3 TO-220 type A package information................................................ 15
4.4 TO-247 package information ........................................................... 17
5 Revision history ............................................................................ 19

2/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical ratings

1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ±25 V
Drain current (continuous) at Tcase = 25 °C 24
ID A
Drain current (continuous) at Tcase = 100 °C 15.5
IDM(1) Drain current (pulsed) 96 A
PTOT Total dissipation at Tcase = 25 °C 190 W
dv/dt(2) Peak diode recovery voltage slope 50
V/ns
dv/dt(3) MOSFET dv/dt ruggedness 50
Tstg Storage temperature
-55 to 150 °C
Tj Operating junction temperature

Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3) VDS ≤ 480 V.

Table 3: Thermal data

Value
Symbol Parameter Unit
D²PAK TO-220 TO-247
Rthj-case Thermal resistance junction-case 0.66
Rthj-pcb Thermal resistance junction-pcb(1) 30 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 50

Notes:
(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol Parameter Value Unit
IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 5.5 A
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 570 mJ

DocID026854 Rev 2 3/20

Electrical characteristics STB33N60DM2, STP33N60DM2, STW33N60DM2

2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS VGS = 0 V, ID = 1 mA 600 V
voltage
VGS = 0 V, VDS = 600 V 1
Zero gate voltage drain
IDSS VGS = 0 V, VDS = 600 V, µA
current 100
Tcase = 125 °C
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 12 A 0.110 0.130 Ω
resistance

Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 1870 -
Coss Output capacitance VDS = 100 V, f = 1 MHz, - 87 -
pF
Reverse transfer VGS = 0 V
Crss - 2 -
capacitance
Equivalent output
Coss eq.(1) VDD = 480 V, VGS = 0 V - 157 - pF
capacitance
RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4.5 - Ω
Qg Total gate charge VDD = 480 V, ID = 24 A, - 43 -
VGS = 10 V (see Figure 19:
Qgs Gate-source charge - 9.8 -
"Test circuit for gate charge nC
behavior" and Figure 23:
Qgd Gate-drain charge - 21 -
"Switching time waveform")

Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 12 A - 17 -
tr Rise time RG = 4.7 Ω, VGS = 10 V (see - 8 -
Figure 18: "Test circuit for ns
td(off) Turn-off delay time resistive load switching - 62 -
tf Fall time times" and ) - 9 -

4/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics
Table 8: Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 24 A
ISDM(1) Source-drain current (pulsed) - 96 A
VSD(2) Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V
trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, - 150 ns
VDD = 60 V (see Figure 20:
Qrr Reverse recovery charge - 0.5 µC
"Test circuit for inductive
load switching and diode
IRRM Reverse recovery current - 8.8 A
recovery times")
trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, - 316 ns
VDD = 60 V, Tj = 150 °C
Qrr Reverse recovery charge - 2.85 µC
(see Figure 20: "Test circuit
for inductive load switching
IRRM Reverse recovery current - 18 A
and diode recovery times")

Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V

DocID026854 Rev 2 5/20

Electrical characteristics STB33N60DM2, STP33N60DM2, STW33N60DM2
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK Figure 3: Thermal impedance for D²PAK
K

δ=0.5

0.2

0.1
10 -1 0.05

0.02
Zth= K*Rthj-c
δ= tp/Ƭ

0.01
Single pulse tp
Ƭ

10 -2
10 -5 10 -4
10 -3
10 -2
10 -1 t P (s)

Figure 4: Safe operating area for TO-220 Figure 5: Thermal impedance for TO-220
K

δ=0.5

0.2

0.1
10 -1 0.05

0.02
Zth= K*Rthj-c
δ= tp/Ƭ

0.01
Single pulse tp
Ƭ
-2
10
10 -5 10 -4 10 -3 10 -2 10 -1 t P (s)

Figure 6: Safe operating area for TO-247 Figure 7: Thermal impedance for TO-247

6/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics
Figure 8: Output characteristics Figure 9: Transfer characteristics

Figure 10: Gate charge vs gate-source

Figure 11: Static drain-source on-resistance
voltage

Figure 13: Normalized gate threshold voltage

Figure 12: Capacitance variations
vs temperature

DocID026854 Rev 2 7/20

Electrical characteristics STB33N60DM2, STP33N60DM2, STW33N60DM2
Figure 14: Normalized on-resistance vs Figure 15: Normalized V(BR)DSS vs
temperature temperature

Figure 17: Source- drain diode forward

Figure 16: Output capacitance stored energy
characteristics

8/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Test circuits

3 Test circuits
Figure 18: Test circuit for resistive load Figure 19: Test circuit for gate charge
switching times behavior

Figure 20: Test circuit for inductive load

switching and diode recovery times Figure 21: Unclamped inductive load test
circuit

Figure 22: Unclamped inductive waveform Figure 23: Switching time waveform

DocID026854 Rev 2 9/20

Package information STB33N60DM2, STP33N60DM2, STW33N60DM2

4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

4.1 D²PAK package information

Figure 24: D²PAK (TO-263) type A package outline

0079457_A_rev22

10/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information
Table 10: D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10 10.40
E1 8.50 8.70 8.90
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°

DocID026854 Rev 2 11/20

Package information STB33N60DM2, STP33N60DM2, STW33N60DM2
Figure 25: D²PAK (TO-263) recommended footprint (dimensions are in mm)

12/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information
4.2 D²PAK packing information
Figure 26: Tape outline

DocID026854 Rev 2 13/20

Package information STB33N60DM2, STP33N60DM2, STW33N60DM2
Figure 27: Reel outline

Table 11: D²PAK tape and reel mechanical data

Tape Reel
mm mm
Dim. Dim.
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

14/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information
4.3 TO-220 type A package information
Figure 28: TO-220 type A package outline

DocID026854 Rev 2 15/20

Package information STB33N60DM2, STP33N60DM2, STW33N60DM2
Table 12: TO-220 type A mechanical data
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

16/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information
4.4 TO-247 package information
Figure 29: TO-247 package outline

DocID026854 Rev 2 17/20

Package information STB33N60DM2, STP33N60DM2, STW33N60DM2
Table 13: TO-247 package mechanical data
mm.
Dim.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

18/20 DocID026854 Rev 2

STB33N60DM2, STP33N60DM2, STW33N60DM2 Revision history

5 Revision history
Table 14: Document revision history
Date Revision Changes
16-Oct-2014 1 First release.
Document status promoted from preliminary to production data.
Updated title and features in cover page.
Updated Table 2: "Absolute maximum ratings", Table 4: "Avalanche
02-Nov-2015 2
characteristics", Table 5: "Static", Table 6: "Dynamic", Table 7:
"Switching times" and Table 8: "Source-drain diode".
Added Section 2.1 Electrical characteristics (curves).

DocID026854 Rev 2 19/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2

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