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    Stp80Pf55: P-Channel 55V - 0.016 - 80A To-220 Stripfet Ii Power Mosfet

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    Radoslav Radoslavov
    This document provides preliminary data on the STP80PF55 P-channel 55V - 0.016 Ω - 80A TO-220 power MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 55V, typical on-resistance of 0.016 Ω, and continuous drain current rating of 80A. The MOSFET uses a single feature size strip-based process for low on-resistance and rugged avalanche characteristics with good manufacturing reproducibility. It is suitable for applications such as motor control and DC-DC/DC-AC converters.

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    Stp80Pf55: P-Channel 55V - 0.016 - 80A To-220 Stripfet Ii Power Mosfet

    Uploaded by

    Radoslav Radoslavov
    36 views7 pages
    This document provides preliminary data on the STP80PF55 P-channel 55V - 0.016 Ω - 80A TO-220 power MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 55V, typical on-resistance of 0.016 Ω, and continuous drain current rating of 80A. The MOSFET uses a single feature size strip-based process for low on-resistance and rugged avalanche characteristics with good manufacturing reproducibility. It is suitable for applications such as motor control and DC-DC/DC-AC converters.

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    This document provides preliminary data on the STP80PF55 P-channel 55V - 0.016 Ω - 80A TO-220 power MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 55V, typical on-resistance of 0.016 Ω, and continuous drain current rating of 80A. The MOSFET uses a single feature size strip-based process for low on-resistance and rugged avalanche characteristics with good manufacturing reproducibility. It is suitable for applications such as motor control and DC-DC/DC-AC converters.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    36 views7 pages

    Stp80Pf55: P-Channel 55V - 0.016 - 80A To-220 Stripfet Ii Power Mosfet

    Uploaded by

    Radoslav Radoslavov
    This document provides preliminary data on the STP80PF55 P-channel 55V - 0.016 Ω - 80A TO-220 power MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 55V, typical on-resistance of 0.016 Ω, and continuous drain current rating of 80A. The MOSFET uses a single feature size strip-based process for low on-resistance and rugged avalanche characteristics with good manufacturing reproducibility. It is suitable for applications such as motor control and DC-DC/DC-AC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    STP80PF55

    P-CHANNEL 55V - 0.016 Ω - 80A TO-220


    STripFET II POWER MOSFET
    PRELIMINARY DATA

    TYPE VDSS RDS(on) ID

    STB80PF55 55 V < 0.018 Ω 80 A


    ■ TYPICAL RDS(on) = 0.016 Ω
    ■ EXCEPTIONAL dv/dt CAPABILITY
    ■ 100% AVALANCHE TESTED
    ■ APPLICATION ORIENTED
    CHARACTERIZATION
    3
    2
    1
    DESCRIPTION
    This Power MOSFET is the latest development of TO-220
    STMicroelectronis unique ”Single Feature Size ”
    strip-based process. The resulting transistor
    shows extremely high packing density for low on-
    resistance, rugged avalanche characteristics and
    less critical alignment steps therefore a remark-
    able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

    APPLICATIONS
    ■ MOTOR CONTROL

    ■ DC-DC & DC-AC CONVERTERS

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V DS Drain-source Voltage (VGS = 0) 55 V
    V DGR Drain-gate Voltage (RGS = 20 kΩ) 55 V
    VGS Gate- source Voltage ± 16 V
    ID(*) Drain Current (continuos) at TC = 25°C 80 A
    ID Drain Current (continuos) at TC = 100°C 57 A
    IDM(•) Drain Current (pulsed) 320 A
    Ptot Total Dissipation at TC = 25°C 300 W
    Derating Factor 2 W/°C
    dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
    E AS (2) Single Pulse Avalanche Energy 1.4 mJ
    Tstg Storage Temperature
    -55 to 175 °C
    Tj Max. Operating Junction Temperature
    (•) Pulse width limit ed by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and
    (*) Current Limited by Package current has to be reversed
    (1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX.
    (2) Starting Tj = 25 oC, ID = 80A, VDD = 40V

    February 2002 1/6


    This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
    STP80PF55

    THERMAL DATA
    Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
    Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
    Tl Maximum Lead Temperature For Soldering Purpose Typ 300 °C

    ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)


    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    V(BR)DSS Drain-source ID = 250 µA, VGS = 0 55 V


    Breakdown Voltage

    IDSS Zero Gate Voltage VDS = Max Rating 1 µA


    Drain Current (V GS = 0) VDS = Max Rating TC = 125°C 10 µA

    Gate-body Leakage VGS = ± 16 V ±100 nA


    IGSS
    Current (VDS = 0)

    ON (*)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V

    R DS(on) Static Drain-source On VGS = 10 V ID = 40 A 0.016 0.018 Ω


    Resistance

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    g fs Forward Transconductance VDS > ID(on) x RDS(on)max, 32 S


    ID = 40 A

    C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 5500 pF


    Coss Output Capacitance 1130 pF
    Crss Reverse Transfer 600 pF
    Capacitance

    2/6
    STP80PF55

    ELECTRICAL CHARACTERISTICS (continued)


    SWITCHING ON (*)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(on) Turn-on Delay Time VDD = 25 V I D = 40 A 35 ns


    tr Rise Time R G = 4.7 Ω V GS = 10 V 190 ns
    (Resistive Load, Figure 3)
    Qg Total Gate Charge VDD= 25 V ID = 80 A VGS= 10V 190 258 nC
    Qgs Gate-Source Charge 27 nC
    Q gd Gate-Drain Charge 65 nC

    SWITCHING OFF (*)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    td(off) Turn-off Delay Time VDD = 25 V I D = 40 A 165 ns


    tf Fall Time RG = 4.7 Ω VGS = 10 V 80 ns
    (Resistive Load, Figure 3)

    tr(Voff) Off-voltage Rise Time Vclamp = 40 V ID = 80 A 60 ns


    tf Fall Time RG = 4.7 Ω VGS = 10 V 40 ns
    tc Cross-over Time (Inductive Load, Figure 5) 85 ns

    SOURCE DRAIN DIODE (*)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    ISD Source-drain Current 80 A


    ISDM (•) Source-drain Current (pulsed) 320 A

    VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.3 V

    trr Reverse Recovery Time ISD = 80 A di/dt = 100A/µs 110 ns


    Qrr Reverse Recovery Charge VDD = 25 V T j = 150°C 495 nC
    IRRM Reverse Recovery Current (see test circuit, Figure 5) 9 A
    (*) Pulse width [ 300 µs, duty cycle 1.5 %.
    (•) Pulse width limited by TJMAX

    3/6
    STP80PF55

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

    Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
    Load

    Fig. 5: Test Circuit For Inductive Load Switching


    And Diode Recovery Times

    4/6
    STP80PF55

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.051
    D 2.40 2.72 0.094 0.107
    D1 1.27 0.050
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.203
    G1 2.4 2.7 0.094 0.106
    H2 10.0 10.40 0.393 0.409
    L2 16.4 0.645
    L4 13.0 14.0 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.2 6.6 0.244 0.260
    L9 3.5 3.93 0.137 0.154
    DIA. 3.75 3.85 0.147 0.151

    E
    A

    D
    C

    D1

    L2
    F1

    G1

    H2
    G

    Dia.
    F
    F2

    L5
    L9
    L7

    L6 L4
    P011C

    5/6
    STP80PF55

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
    by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
    to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
    authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics.

    The ST logo is registered trademark of STMicroelectronics


     2002 STMicroelectronics - All Rights Reserved

    All other names are the property of their respective owners.

    STMicroelectronics GROUP OF COMPANIES


    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
    http://w ww.st.com

    6/6
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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