FJD5304D — High Voltage Fast Switching Transistor

July 2010

FJD5304D
High Voltage Fast Switching Transistor
Features
• Built-in Free Wheeling Diode
• Wide Safe Operating Area
• Small Variance in Storage Time
• Suitable for Electronic Ballast Application

Equivalent Circuit

1 D-PAK
1. Base 2. Collector 3. Emitter E

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current (DC) 4 A
ICP * Collector Current (Pulse) 8 A
IB Base Current (DC) 2 A
IBP * Base Current (Pulse) 4 A
PC Collector Dissipation Tc = 25°C 30 W
Ta = 25°C 1.25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed

Thermal Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Value Units
Rθja Thermal Resistance Junction-Ambient ** 99 °C/W
** Device mounted on minimum pad size.

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJD5304D Rev. A1 1
 FJD5304D — High Voltage Fast Switching Transistor
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
J5304D FJD5304DTM D-PAK 13” Dia - 2500
J5304D FJD5304DTF D-PAK 13” Dia - 2000

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V
ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA
ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA
IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA
hFE DC Current Gain VCE = 5V, IC = 10mA 10
VCE = 5V, IC = 2.0A 8 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 0.7 V
IC = 1.0A, IB = 0.2A 1.0 V
IC = 2.5A, IB = 0.5A 1.5 V
VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.1 V
IC = 1.0A, IB = 0.2A 1.2 V
IC = 2.5A, IB = 0.5A 1.3 V
tSTG Storage Time VCLAMP=200V, IC=2.0A, 0.6 µs
tF Fall Time IB1=0.4A, VBE(off)=-5V, L=200µH 0.1 µs
tSTG Storage Time VCC=250V, IC=2.0A, 2.9 µs
tF Fall Time IB1=0.4A, IB2=-0.4A, TP=30µs 0.2 µs
VF Diode Forward Voltage IF = 2A 2.5 V

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJD5304D Rev. A1 2
 FJD5304D — High Voltage Fast Switching Transistor
Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

4.0 100

IB=300mA
3.5 o
TC=125 C
IC [A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

3.0
IB=150mA
2.5 o
IB=100mA TC= - 25 C o
TC=25 C
2.0 10

1.5 IB=50mA

1.0

0.5

0.0 1
0 2 4 6 8 10 12 0.01 0.1 1 10
VCE [V]. COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

10 10
IC = 5 IB IC = 5 IB
VCE(sat) [V], SATURATION VOLTAGE

VBE(sat) [V], SATURATION VOLTAGE

o
TC=125 C

1
o
TC=25 C
o
1 TC= - 25 C
o
TC= - 25 C
0.1 o
o TC=25 C
TC=125 C

0.01 0.1
0.01 0.1 1 10 0.01 0.1 1 10
IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area

10 100

tSTG
tSTG & tF [µs], SWITCHING TIME

IC [A], COLLECTOR CURRENT

10
Pulse IC_MAX

1 1µs
10µs
DC IC_MAX

1
1ms
tF
0.1

0.1

VCC=250V TC = 25 C
o

IC= 5 IB1= - 5 IB2 Single Pulse

0.01 0.01
0.1 1 10 1 10 100 1000
IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJD5304D Rev. A1 3
 FJD5304D — High Voltage Fast Switching Transistor
Typical Performance Characteristics (Continued)

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve
10

PC [W], COLLECTOR POWER DISSIPATION

9
Vcc=50V, L = 1mH
IB1=1A, IB2 = -1A
IC [A], COLLECTOR CURRENT

8 40

4 20

0 0
0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150
VCE [V], COLLECTOR-EMITTER VOLTAGE o
TC [ C], CASE TEMPERATURE

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJD5304D Rev. A1 4
 FJD5304D — High Voltage Fast Switching Transistor
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJD5304D Rev. A1 5
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Rev. I49

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