FJP13007 — High Voltage Fast-Switching NPN Power Transistor

November 2014

FJP13007
High Voltage Fast-Switching NPN Power Transistor

Features
• High Voltage High Speed Power Switch Application
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1 TO-220

1.Base 2.Collector 3.Emitter

Ordering Information
Part Number Top Mark Package Packing Method
FJP13007TU J13007 TO-220 3L (Dual Gauge) Rail
FJP13007H1TU J13007-1 TO-220 3L (Single Gauge) Rail
FJP13007H1TU_F080 J13007-1 TO-220 3L (Dual Gauge) Rail
FJP13007H2TU J13007-2 TO-220 3L (Dual Gauge) Rail
FJP13007H2TU_F080 J13007-2 TO-220 3L (Dual Gauge) Rail

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current (DC) 4 A
PC Collector Dissipation (TC = 25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. 1.1.0
 FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 400 V
IEBO Emitter Cut-Off Current VEB = 9 V, IC = 0 1 mA
(1)
hFE1 DC Current Gain VCE = 5 V, IC = 2 A 8 60
hFE2 DC Current Gain(1) VCE = 5 V, IC = 5 A 5 30
IC = 2 A, IB = 0.4 A 1.0
VCE(sat) Collector-Emitter Saturation Voltage IC = 5 A, IB = 1 A 2.0 V
IC = 8 A, IB = 2 A 3.0
IC = 2 A, IB = 0.4 A 1.2
VBE(sat) Collector-Base Saturation Voltage V
IC = 5 A, IB = 1 A 1.6
fT Current Gain Bandwidth Product VCE = 10 V, IC = 0.5 A 4 MHz
Cob Output Capacitance VCB = 10 V, f = 0.1 MHz 110 pF
tON Turn-On Time VCC = 125 V, IC = 5 A, 1.6 μs
tSTG Storage Time IB1 = -IB2 = 1 A, 3.0 μs
tF Fall Time RL = 25 Ω 0.7 μs

Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

hFE Classification
Classification H1 H2
hFE1 15 ~ 28 26 ~ 39

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. 1.1.0 2
 FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10
100
IC = 3 IB
VCE = 5V
hFE, DC CURRENT GAIN

1
VBE(sat)

10

VCE(sat)
0.1

0.01
1 0.1 1 10 100
0.1 1 10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Saturation Voltage

1000 1000
Cob[pF], OUTPUT CAPACITANCE

tR, tD [ns], TURN ON TIME

100 tR

100

tD, VBE(off)=5V
10

VCC=125V
IC=5IB

1 10
0.1 1 10 100 1000 0.1 1 10

VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn-On Time

10000 100
VCC=125V
IC=5IB
tSTG, tF [ns], TURN OFF TIME

tSTG 10μs
IC[A], COLLECTOR CURRENT

10
1ms
1000 DC 100μs

100
tF
0.1

10 0.01
0.1 1 10 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn-Off Time Figure 6. Forward Biased Safe Operating Area

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. 1.1.0 3
 FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics (Continued)

100 100
Vcc=50V,
90
IB1=1A, IB2 = -1A
L = 1mH 80
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

10
70

60

1 50

40

30
0.1
20

10

0.01 0
10 100 1000 10000 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. 1.1.0 4
 FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Physical Dimensions

Figure 9. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. 1.1.0 5
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Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
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changes at any time without notice to improve the design.
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Obsolete Not In Production
The datasheet is for reference information only.
Rev. I72

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