2SK3309

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3309
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)

• High forward transfer admittance: |Yfs| = 4.3 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 450 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 10
Drain current A
Pulse (Note 1) IDP 40
Drain power dissipation (Tc = 25°C) PD 65 W
Single pulse avalanche energy
EAS 222 mJ
(Note 2)
Avalanche current IAR 10 A JEDEC ―
Repetitive avalanche energy (Note 3) EAR 6.5 mJ JEITA ―
Channel temperature Tch 150 °C TOSHIBA 2-10S1B
Storage temperature range Tstg −55~150 °C
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).

Thermal Characteristics
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 1.92 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W

Note 1: Please use devise on condition that the channel temperature is

below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 Ω, JEDEC ―
IAR = 10 A JEITA ―
Note 3: Repetitive rating: Pulse width limited by maximum channel
TOSHIBA 2-10S2B
temperature
Weight: 1.5 g (typ.)
This transistor is an electrostatic sensitive device. Please handle with
caution.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate -source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA
450
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V ⎯ ⎯ V
550
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.48 0.65 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 1.5 4.3 ⎯ S
Input capacitance Ciss ⎯ 920 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 12 ⎯ pF

Output capacitance Coss ⎯ 140 ⎯

Rise time tr ⎯ 25 ⎯
10 V ID = 5 A
VGS VOUT
0V
Turn-on time ton ⎯ 35 ⎯
RL = 40 Ω
10 Ω

Switching time ns

Fall time tf ⎯ 10 ⎯
Duty <
= 1%, tw = 10 μs VDD ∼
− 200 V

Turn-off time toff ⎯ 60 ⎯

Total gate charge Qg ⎯ 23 ⎯

Gate-source charge Qgs VDD ∼
− 360 V, VGS = 10 V, ID = 10 A ⎯ 9 ⎯ nC

Gate-drain charge Qgd ⎯ 14 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 40 A
Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 280 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 2.7 ⎯ μC

Marking

※ Lot Number
K3309 Type

※ Month (starting from alphabet A)

Year (last number of the christian era)

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 2SK3309

ID – VDS ID – VDS
10 20
Common source 15 10 15 10 Common source
8.5
Tc = 25°C Tc = 25°C
Pulse test 9 Pulse test
8 8 16
Drain current ID (A)

Drain current ID (A)

8.5
6 12
7.5
8

4 8
7 7.5

7
2 4
VGS = 6 V
VGS = 6 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

20 10
Common source Common source
VDS = 20 V Tc = 25°C
VDS (V)

Pulse test Pulse test

16 8
Drain current ID (A)

12 6
Drain-source voltage

ID = 10 A

8 4
25
5
Tc = −55°C
4 100 2
2.5

0 0
0 2 4 6 8 10 12 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

100 10
Common source Common source
VDS = 20 V Tc = 25°C
(S)

Pulse test Pulse test

Forward transfer admittance ⎪Yfs⎪

Drain-source on resistance

10
RDS (ON) (Ω)

Tc = −55°C 25

100
1
VGS = 10, 15 V

0.1 0.1
0.1 1 10 100 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Tc IDR – VDS

2.0 100
Common source Common source
VGS = 10 V Tc = 25°C
Pulse test Pulse test

(A)
1.6
Drain-source on resistance

10

Drain reverse current IDR

5
RDS (ON) (Ω)

1.2
ID = 10 A
1
2.5 10
0.8

5
0.1
0.4
1
3
VGS = 0, −1 V
0 0.01
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

10000 6
Common source
VDS = 10 V
ID = 1 mA
Vth (V)

5
Pulse test
1000 Ciss
4
(pF)

Gate threshold voltage

Capacitance C

3
100
Coss
2

10 Common 1
source Crss

VGS = 0 V
0
f = 1 MHz −80 −40 0 40 80 120 160
1
0.1 1 10 100 1000 Case temperature Tc (°C)

Drain-source voltage VDS (V)

PD – Tc Dynamic input/output characteristics

100 500 20
Common source
ID = 10 A
Drain power dissipation PD (W)

Tc = 25°C
VDS (V)

VGS (V)

80 400 16
Pulse test
VDD = 90 V
VDS
60 300 12
Drain-source voltage

Gate-source voltage

180
360

40 200 8
VGS

20 100 4

0 0 0
0 40 80 120 160 200 0 10 20 30 40 50

Case temperature Tc (°C) Total gate charge Qg (nC)

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rth – tw
10
Normalized transient thermal impedance

1
Duty = 0.5

0.2
rth (t)/Rth (ch-a)

0.1
0.1
0.05

0.02 PDM
Single pulse

0.01 t
0.01
T

Duty = t/T
Rth (ch-c) = 1.92°C/W

0.001
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse width tw (S)

Safe operating area EAS – Tch
100 400

ID max (pulse) *
Avalanche energy EAS (mJ)

ID max 300
100 μs *
(continuous)
10
(A)

1 ms * 200
Drain current ID

1 DC operation 100
Tc = 25°C

0
25 50 75 100 125 150
0.1
* Single nonrepetitive pulse Channel temperature (initial) Tch (°C)
Tc = 25°C
Curves must be derated
linearly with increase in VDSS max BVDSS
temperature. 15 V
0.01
1 10 100 1000 IAR
−15 V
Drain-source voltage VDS (V) VDD VDS

Test circuit Wave form

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 3.7 mH 2 ⎜B − ⎟
⎝ VDSS VDD ⎠

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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