TK10A60D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK10A60D
Switching Regulator Applications Unit: mm

• Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V 1: Gate
2: Drain
Gate-source voltage VGSS ±30 V 3: Source
DC (Note 1) ID 10
Drain current Pulse (t = 1 ms) A
IDP 40
(Note 1) JEDEC ―
Drain power dissipation (Tc = 25°C) PD 45 W JEITA SC-67
Single pulse avalanche energy
(Note 2)
EAS 363 mJ TOSHIBA 2-10U1B

Avalanche current IAR 10 A Weight : 1.7 g (typ.)

Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Thermal Characteristics 2

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 1

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3

This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA

Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.62 0.75 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 1.5 6.0 ⎯ S
Input capacitance Ciss ⎯ 1350 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 6 ⎯ pF

Output capacitance Coss ⎯ 135 ⎯

10 V ID = 5 A VOUT
Rise time tr VGS ⎯ 22 ⎯
0V
Turn-on time ton RL = ⎯ 55 ⎯
50 Ω
Switching time 40 Ω ns
Fall time tf ⎯ 15 ⎯
VDD ∼
− 200 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 100 ⎯

Total gate charge Qg ⎯ 25 ⎯

Gate-source charge Qgs VDD ∼
− 400 V, VGS = 10 V, ID = 10 A ⎯ 16 ⎯ nC

Gate-drain charge Qgd ⎯ 9 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 40 A

Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 1300 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 12 ⎯ μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K10A60D Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to
Lot No.
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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 TK10A60D

ID – VDS ID – VDS
10 20
COMMON SOURCE 8 COMMON SOURCE
6.5 10
Tc = 25°C 7 Tc = 25°C
7.5
PULSE TEST 7 PULSE TEST

(A)
(A)

8 10,8 16
6.25

DRAIN CURRENT ID
DRAIN CURRENT ID

6.75
6 12
6
6.5

4 8
6
5.5

2 4 5.5
5

VGS = 4.5V VGS = 5 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

20 10
VDS (V)

COMMON SOURCE COMMON SOURCE

VDS = 20 V Tc = 25℃
(A)

16 8 PULSE TEST
PULSE TEST
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

12 6
ID = 10 A

8 4

100 Tc = −55°C 5
4 2
25
2.5
0 0
0 2 4 6 8 10 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST

Tc = −55°C
10
RDS (ON) (Ω)
⎪Yfs⎪ (S)

25
100
1
VGS = 10 V､15V

0.1
0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) – Tc IDR – VDS

2.5 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

DRAIN REVERSE CURRENT IDR

VGS = 10 V Tc = 25°C
2.0 PULSE TEST PULSE TEST

10
RDS (ON) ( Ω)

1.5 ID=10A

(A)
5A

1.0 2.5A
1

10
0.5
5
3
1 VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

1000
C

Coss 3
CAPACITANCE

Vth (V)

100

Crss COMMON SOURCE

10 COMMON SOURCE
VDS = 10 V
VGS = 0 V 1
f = 1 MHz ID = 1 mA

Tc = 25°C PULSE TEST

1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
80 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VDS
VGS

400 16
60
DRAIN-SOURCE VOLTAGE

GATE-SOURCE VOLTAGE

300 12
PD (W)

VDD = 100 V
40 400

200 Common source 8

ID= 10 A
200
20 VGS Tc = 25°C
100 4
Pulse test

0 0 0
0 40 80 120 160 200 0 10 20 30 40

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty = 0.5
Duty=0.5

0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ 100μ 1m 10m 100m 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 500
ID max (pulsed) *

100 μs *
400
AVALANCHE ENERGY

ID max (continuous) * 1 ms *
10
(A)

EAS (mJ)

300
DRAIN CURRENT ID

1
200
DC operation
Tc = 25°C

100
0.1

0
25 50 75 100 125 150
*: SINGLE NONREPETITIVE PULSE
0.01
Tc = 25°C CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED
Tch (°C)
LINEARLY WITH INCREASE IN VDSS max
0.001 TEMPERATURE. BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 6.36mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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