Byv10ed 600p

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BYV10ED-600P

Ultrafast power diode


4 July 2017 Product data sheet

1. General description
Enhanced ultrafast power diode in a TO252 (DPAK) plastic package.

2. Features and benefits


• High thermal cycling performance
• Soft recovery characteristic
• Low on-state losses
• Surface-mountable package
• Low thermal resistance
• Enhanced avalanche energy capability

3. Applications
• Dual Mode (DCM and CCM) PFC
• Power Factor Correction (PFC) for Interleaved Topology

4. Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
VRRM repetitive peak reverse 600 V
voltage
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 118 °C; 10 A
Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 118 °C; 20 A
current square-wave pulse
IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; 70 A
forward current Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; 80 A

Symbol Parameter Conditions Min Typ Max Unit


Static characteristics
VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 6 - 1.5 2 V
IF = 10 A; Tj = 150 °C; Fig. 6 - - 1.6 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; - 35 50 ns
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 50 - ns
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 78 - ns
Tj = 125 °C; Fig. 7
WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 n.c. not connected mb K A
001aaa020
2 K cathode[1]
3 A anode
mb mb mounting base; connected to
cathode

DPAK (TO252N)

[1] It is not possible to connect to pin 2 of the SOT428 package.

6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BYV10ED-600P DPAK plastic single-ended surface-mounted package (DPAK); 3 leads TO252N
(one lead cropped)

7. Marking
Table 4. Marking codes
Type number Marking code
BYV10ED-600P BYV10ED-600P

BYV10ED-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved

Product data sheet 4 July 2017 2 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
VRRM repetitive peak reverse 600 V
voltage
VRWM crest working reverse 600 V
voltage
VR reverse voltage DC 600 V
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 118 °C; 10 A
Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 118 °C; 20 A
current square-wave pulse
IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; 70 A
forward current Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; 80 A
Tstg storage temperature -40 to 175 °C
Tj junction temperature 175 °C

aaa-017655
aaa-017654 20
25
δ=1 Ptot a = 1.57
Ptot
(W)
(W) 1.9
0.5 16
20 2.2
2.8
0.2 12 4.0
15
0.1

8
10

4
5

0
0 0 2 4 6 8 10
0 5 10 15 IF(AV) (A)
IF(AV) (A)

IF(AV) = IF(RMS) × √δ a = form factor = IF(RMS) / IF(AV)


Vo = 1.241 V; Rs = 0.034 Ω Vo = 1.241 V; Rs = 0.034 Ω
Fig. 1. Forward power dissipation as a function of Fig. 2. Forward power dissipation as a function
average forward current; square waveform; maximum of average forward current; sinusoidal waveform;
values maximum values

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Product data sheet 4 July 2017 3 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

aaa-017657
16
aaa-017656 104

IF(AV) IFSM
(A) (A)
12
118 °C
103

102 IF IFSM

tp t
Tj(init) = 25 °C max
0 10
-50 0 50 100 150 200 10-5 10-4 10-3 10-2
Tmb (°C) tp (s)

Fig. 3. Forward current as a function of mounting base Fig. 4. Non-repetitive peak forward current as a function
temperature; maximum values of pulse width; sinusoidal waveform; maximum values

BYV10ED-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved

Product data sheet 4 July 2017 4 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance With heatsink compound; Fig. 5 - - 3 K/W
from junction to
mounting base
Rth(j-a) thermal resistance in free air - 50 - K/W
from junction to
ambient free air

aaa-017658
10

Zth(j-mb)
(K/W)

δ = 0.5
δ = 0.2
10-1
δ = 0.1

δ = 0.05
single pulse

10-2
10-6 105 104 10-3 10-2 10-1 1 10
tp (s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

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Product data sheet 4 July 2017 5 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VF forward current IF = 10 A; Tj = 25 °C; Fig. 6 - 1.5 2 V
IF = 10 A; Tj = 150 °C; Fig. 6 - - 1.6 V
IR reverse current VR = 600 V; Tj = 25 °C - - 10 μA
VR = 600 V; Tj = 150 °C - - 500 μA
Dynamic characteristics
Qr reverse charge IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 123 - nC
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 305 - nC
Tj = 125 °C; Fig. 7
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; - 35 50 ns
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 50 - ns
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 78 - ns
Tj = 125 °C; Fig. 7
IRM peak reverse recovery IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 4.9 - A
current Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs; - 7.8 - A
Tj = 125 °C; Fig. 7
Eas non-repetitive IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH 10.8 - - mJ
avalanche energy

aaa-017659
20 dlF
IF
IF dt
(A)
16

trr

12
time
(1) (2) (3)
8 25 %

Qr 100 %

IR IRM
003aac562
0
0 1 2 3
VF (V)

Vo = 1.241 V; Rs = 0.034 Ω
(1) Tj = 150 °C; typical values Fig. 7. Reverse recovery definitions; ramp recovery
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage

BYV10ED-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved

Product data sheet 4 July 2017 6 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

11. Package outline

Fig. 8. Package outline DPAK (TO252N)

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Product data sheet 4 July 2017 7 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

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12. Legal information limitation specifications and product descriptions, at any time and without
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BYV10ED-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved

Product data sheet 4 July 2017 8 / 10


WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

Translations — A non-English (translated) version of a document is for


reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

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WeEn Semiconductors BYV10ED-600P
Ultrafast power diode

13. Contents
1. General description........................................................1
2. Features and benefits....................................................1
3. Applications....................................................................1
4. Quick reference data......................................................1
5. Pinning information........................................................2
6. Ordering information......................................................2
7. Marking............................................................................2
8. Limiting values...............................................................3
9. Thermal characteristics.................................................5
10. Characteristics.............................................................6
11. Package outline............................................................7
12. Legal information.........................................................8
13. Contents......................................................................10

© WeEn Semiconductors Co., Ltd. 2017. All rights reserved


For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 July 2017

BYV10ED-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved

Product data sheet 4 July 2017 10 / 10

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