 BYW29(F)

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITED FOR SMPS

VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION (ISOWATT220AC) :
Insulating voltage = 2000 V DC
Capacitance = 12 pF

A A
K K

DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC or ISOWATT220AC this isolated
device is intended for use in low voltage, high TO-220AC ISOWATT220AC
frequency inverters, free wheeling and polarity (Plastic) (Plastic)
protection applications.
BYW29-200 BYW29F-200

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IF(RMS) RMS forward current 16 A

IF(AV) Average forward current TO-220AC Tc=120°C 8 A

δ = 0.5 ISOWATT220AC Tc=100°C 8
IFSM Surge non repetitive forward current tp=10ms 80 A
sinusoidal
Tstg Storage and junction temperature range - 65 to + 150 °C
Tj - 65 to + 150 °C

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 200 V

October 1999 - Ed: 2D 1/6

BYW29(F)

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c) Junction to case TO-220AC 2.8 °C/W

ISOWATT220AC 5.0

ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

IR * Tj = 25°C VR = VRRM 10 µA

Tj = 100°C 0.6 mA

VF ** Tj = 125°C IF = 5 A 0.85 V

Tj = 125°C IF = 10 A 1.05

Tj = 25°C IF = 10 A 1.15

Pulse test :* tp = 5 ms, duty cycle < 2 %

** tp = 380 µs, duty cycle < 2 %

To evaluate the conduction losses use the following equation :

P = 0.65 x IF(AV) + 0.040 x IF2(RMS)

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj = 25°C IF = 0.5A Irr = 0.25A 25 ns

IR = 1A

IF = 1A dIF/dt = -50A/µs 35
VR = 30V

tfr Tj = 25°C IF = 1A tr = 10 ns 15 ns
VFR = 1.1 x VF

VFP Tj = 25°C IF = 1A tr = 10 ns 2 V

2/6
 BYW29(F)

Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.

P F(av)(W) IM(A)
12 160
=0.2 =0.5 =1
=0.05 =0.1 T
140
10
120 IM

8
100 =tp/T
P=10W tp
6 80
T 60 P=5W
4
40
P=15W
2
IF(av)(A) 20
=tp/T tp
0 0
0 1 2 3 4 5 6 7 8 9 10 11 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Fig.3 : Forward voltage drop versus forward

current (maximum values).

VFM(V)
1.8
1.6
Tj= 125 oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2 IFM(A)
0.0
0.1 1 10 100

Fig.4 : Relative variation of thermal impedance Fig.5 : Relative variation of thermal impedance
junction to case versus pulse duration. junction to case versus pulse duration.
(TO-220AC) (ISOWATT220AC)
K K
1.0 1
Zth(j-c) (tp. ) Zth(j-c) (tp. )
K = K =
Rth(j-c) Rth(j-c)
0.8
=0.5 =0.5
0.5
=0.2
0.6

= 0 .1
= 0 .2
0.4
T T
0.2 Single pulse
= 0 .1 Single pulse
0.2

=tp/T tp =tp/T tp
0.1 tp(s) 0 tp(s)
1.0E-03 1.0E-02 1.0E-01 1. 0E+00 1.0E-03 1.0E-02 1.0E-01 1.0 E+00 1. 0E+01

3/6
BYW29(F)

Fig.6 : Non repetitive surge peak forward current Fig.7 : Non repetitive surge peak forward current
versus overload duration. versus overload duration.
(TO-220AC) (ISOWATT220AC)

IM(A) IM(A)
80 60
70
50
60
40
50 Tc=25 o C
Tc=25 oC
40 30
Tc=50 o C
30
Tc=75 o C 20
IM
20 IM Tc=100 o C
t Tc=120 o C 10
10 t
=0.5 t(s) =0.5
t(s)
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1

Fig.8 : Average current versus ambient Fig.9 : Average current versus ambient
temperature. temperature.
(δ: 0.5) (TO-220AC) (δ: 0.5) (ISOWATT220AC)

IF(av)(A) IF(av)(A)
10 10
9 9
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
8 8
7 7
Rth(j-a)=15 o C/W
6 Rth(j-a)=15 o C/W
6
5 5
=0.5 =0.5
4 T 4 T
3 3
2 2
1 =tp/T tp Tamb( o C) 1 =tp/T tp Tamb( o C)
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Fig.10 : Junction capacitance versus reverse Fig.11 : Recovery charges versus dIF/dt.
voltage applied (Typical values).

C(pF) QRR(nC)

F=1Mhz Tj=25o C 90 %CONFIDENCE Tj-100 O C IF=IF(av)

VR(V) dIF/dt(A/us)

4/6
 BYW29(F)

Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic parameters versus junction
temperature.

IRM(A) QRR;IRM[Tj]/QRR;IRM[Tj=125o C]

90% CONFIDENCE Tj-100 OC IF=IF(av)

IRM

QRR

dIF/dt(A/us) Tj( o C)

PACKAGE MECHANICAL DATA

ISOWATT220AC (JEDEC outline)

A
H B DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
Diam

A 4.40 4.60 0.173 0.181

B 2.50 2.70 0.098 0.106
L6
D 2.40 2.75 0.094 0.108
L2
L7 E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
L3
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
F1 H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.63 typ.
L3 28.60 30.60 1.125 1.205
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
F D E
Diam 3.00 3.20 0.118 0.126

Cooling method : C Recommended torque value : 0.55m.N

Marking : Type number Maximum torque value : 0.70m.N
Weight : 2 g

5/6
BYW29(F)
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)

DIMENSIONS
H2 A REF. Millimeters Inches
C Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
L5
L7 C 1.23 1.32 0.048 0.051
ØI D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L6 F 0.61 0.88 0.024 0.034
L2 F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9 D H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
F1 L4 13.00 14.00 0.511 0.551
L4
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
M L7 6.20 6.60 0.244 0.259
F E L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
G Diam. I 3.75 3.85 0.147 0.151

Cooling method : C Recommended torque value : 0.8m.N

Marking : Type number Maximum torque value : 1.0m.N
Weight : 1.86 g

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com

6/6