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2SC1586 PDF

This document provides product specifications for the 2SC1586 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pinning, absolute maximum ratings for voltage, current and power, typical characteristics like current gain and transition frequency, and the package outline dimensions. The transistor is suitable for audio power amplifier and general purpose applications requiring high power dissipation and current capability.

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261 views3 pages

2SC1586 PDF

This document provides product specifications for the 2SC1586 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pinning, absolute maximum ratings for voltage, current and power, typical characteristics like current gain and transition frequency, and the package outline dimensions. The transistor is suitable for audio power amplifier and general purpose applications requiring high power dissipation and current capability.

Uploaded by

isaiasva
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1586

DESCRIPTION
·With TO-3 package
·High power dissipation
·High current capability

APPLICATIONS
·For audio power amplifier and general
purpose applications

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter

3 Collector Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta= )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 250 V

VCEO Collector-emitter voltage Open base 200 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 15 A

IB Base current 4 A

PC Collector power dissipation TC=25 150 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1586

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V

ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA

hFE DC current gain IC=5A ; VCE=4V 60

fT Transition frequency IC=1A ; VCE=12V 10 MHz

COB Collector output capacitance IE=0 ; VCB= 10V; f=1MHz 110 pF

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1586

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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