ME MCQ Sanfoundary

Sanfoundary
Lumped Element Circuit Model of Transmission Line

1. The key difference between circuit theory and transmission line theory is:
a) circuit elements
b) voltage
c) current
d) electrical size
2. Transmission line is a _________ parameter network.
a) lumped
b) distributed
c) active
d) none of the mentioned
3. 3. For transverse electromagnetic wave propagation, we need a minimum of:
a) 1 conductor
b) 2 conductors
c) 3 conductors
d) bunch of conductors
4. 4. To model a transmission line of infinitesimal length Δz, the lumped element that is not
used is:
a) resistor
b) inductor
c) capacitor
d) transistor
5. 5. _________ and __________ contribute to the impedance of a transmission line in the
lumped element representation.
a) resistor, inductor
b) resistor, capacitor
c) capacitor, inductor
d) transistor, capacitor
6. _________ and __________ contribute to the admittance of a transmission line in the
lumped element representation.
a) conductance G, capacitor
b) conductance, inductor
c) resistor, capacitor
d) resistor, inductor
7. 7. Characteristic impedance of a transmission line is:
a) impedance Z of a transmission line
b) impedance which is a constant at any point on the transmission line
c) reciprocal of admittance of a transmission line
8. 8. Propagation constant γ is a :
a) real value
b) none of the mentioned
c) imaginary value
d) complex value
9. 9. Attenuation constant α signifies:
a) real part of propagation constant
b) loss that the transmission line causes
c) none of the mentioned
d) all of the mentioned
10. 10. Propagation constant γ is given by:
a) α+jβ
b) α-jβ
c) α/jβ
d) α.jβ
11. 11. Characteristic impedance Zₒ is given by:
a) √Z/Y
b) √ZY
c) √Z+√Y
d) √Z-√Y
12. 12. Propagation constant γ in terms of admittance and impedance of the transmission
line is:
a) √Z/Y
b) √ZY
c) ZY
d) ZY*
Lossless Lines
1. The value of ‘α’ for a lossless line is:
a) 0
b) 1
c) Infinity
d) Data insufficient
2. 2. If propagation constant is 12:60°, then the value of phase constant and attenuation
constant is:
a) α=6, β=10.39
b) α=61, β=78
c) α=12, β=20.6
3. 3. If a transmission line with inductive reactance of 41.97 Ω and capacitive reactance of
1132.5Ω is operated at 1 GHz , then its phase constant is:
a) 0.0305
b) 0.3
c) 30.3
d) 0.6
4. 4. The expression for a phase velocity of a transmission line is:
a) √LC
b) 1/√LC
c) XL+Xc
d) XL/Xc
5. 5. If the admittance and the impedance of a transmission line are 100 Ω and 50 Ω of a
respectively, then value of phase constant β is:
a) 0
b) 20
c) 132
d) 50
6. 6. For a lossless line, which of the following is true?
a) γ=jβ
b) γ=α
c) γ=α+jβ
d) γ=α*jβ
7. 7. Expression for phase constant β is:
a) √LC
b) ω √LC
c)1/ (ω √LC)
d) None of the mentioned
8. 8. A microwave generator at 1.2 GHz supplies power to a microwave transmission line
having the parameters R=0.8Ω/m, G=O.8millisiemen/m, L=0.01µH/m and C=0.4PF/m.
Propagation constant of the transmission line is:
a) 0.0654 +j0.48
b) 0.064+j4.8
c) 6.4+j4.8
9. 9. In a certain microwave transmission line, the characteristic impedance was found to
be 210 10°Ω and propagation constant 0.2 78°.What is the impedance Z of the line, if
the frequency of operation is 1 GHz?
a) 0.035+j41.97
b) 0.35+j4.97
c) 35.6+j4.28
d) 9.254+j4.6
10. 10. For a transmission line, L=1.8mh/m C=0.01pF/m, then the phase constant of the line
when operated at a frequency of 1 GHz is:
a) 4.2426
b) 2.2
c) 0.3
d) 1
11. 3. For a parallel plate type of a transmission line, then expression for conductance of
the line is:
a) ∈(ω)w/d
b) 2Rx/x
c) μ/2π ln⁡(w/d)
d) μ/π cosh-1(w/2d)
12. 4. One of the Maxwell‘s curl equation that is satisfied inside a coaxial line is:
a) ∇×E =-jωµ (vector H)
b) ∇×E =-jωμ(vector E)
c) ∇×H=-jωμ(vector H)
d) ∇×H=jωμ(vector H)
13. 5. The wave impedance of air for a wave propagating in it is:
a) 377 Ω
b) 345 Ω
c) Insufficient data
14. 6. Wave impedance of a wave travelling in a medium of a relative permittivity 2 and
permeability 4 is
a) 188.5 Ω
b) 200 Ω
c) 300 Ω
15. 8. Expression for capacitance of a two wire transmission line is
a) ∈’*π/cosh⁡-1(D/2a)
b) μ/π*cosh-1(D/2a)
c) 2π∈/ln⁡(D/2a)
d) ∈”*πω/cosh-1(D/2a)
16. 8. Flow of power in transmission line takes place through:
a) Electric field and magnetic field
b) Voltage and current
c) Voltage
d) Electric field
17. 9. When a transmission line is exited by a source, total power supplied is delivered to
the load.
a) True
b) False
18. 10. Expression for propagation constant. γ In terms of ω is:
a) √ω2µ∈
b) ω2µ∈
c) – ω2µ∈
19. 1. When a lossless line is terminated with an arbitrary load impedance Z L, then it :
a) causes wave reflection on transmission lines
b) transmits the entire supplied power
c) causes loss in transmission line
20. 2. We say a transmission line is matched when:
a) ZL=Z0
b) ZL=√Z0
c) ZL=Z0/2
d) ZL=2Z0
21. 3. Voltage reflection coefficient can be defined as:
a) ratio of amplitude of reflected voltage wave to the transmitted voltage wave
b) ratio of amplitude of reflected voltage to the incident voltage wave
c) ratio of load impedance to the characteristic impedance of the transmission line
22. 4. Expression for a voltage reflection co-efficient in terms of load impedance and
characteristics impedance is:
a) (ZL– Z0)/(ZL+ Z0)
b) (ZL+ Z0)/(ZL– Z0)
c) ZL. Z0/( ZL+ Z0)( ZL-Z0)
d) (ZL+ Z0)( ZL-Z0)/ ZL. Z0
23. 5. If a transmission line of a characteristics impedance 50 Ω is terminated with a load
impedance of 100 Ω, then the reflection co efficient is:
a) 0.3334
b) 0.6667
c) 1.6
d) 1.333
24. 6. Return loss for a transmission line in terms of its reflection co efficient is given by:
a) -20logl┌l in dB where ┌ is the reflection coefficient.
b) -10logl┌l in dB where ┌ is the reflection coefficient
c) -10log (1/l┌l) in dB where ┌ is the reflection coefficient
d) -20log (1/l┌l) in dB where ┌ is the reflection coefficient
25. 7. If the reflection coefficient for transmission line is 0.24, then the return lossin dB is:
a) 12.39dB
b) 15dB
c) -12.39dB
d) -15.2dB
26. 8. Expression for VSWR in terms of reflection co-efficient is:
a) (1+│┌│)/(1-│┌│)
b) (1-│┌│)/(1+│┌│)
c) 1/│┌│
d) 1/1+│┌│
27. 9. If the reflection co-efficient for a transmission line is 0.3, then the VSWR is:
a) 0.5384
b) 1.8571
c) 0.4567
d) 3.6732
28. 10. If a transmission line of characteristic impedance 50 Ω is terminated with a load
impedance of 150 Ω, then VSWR is:
a) 0.75
b) 0.5
c) 2
29. 1. Expression for input impedance of a transmission line in terms of load impedance
and characteristic impedance is:
a) Z0 (ZL+j Z0tan βl)/ (Z0+j ZLtan βl)
b) (Z0+j ZLtan βl)/ (ZL+j Z0tan βl)
c) Z0 (ZL-j Z0tan βl)/ (Z0-j ZLtan βl)
d) (Z0-j ZLtan βl)/ (ZL-j Z0tan βl)
30. 2. Input impedance of a short circuited transmission line is :
a) -jZ0tanβl
b) jZ0tanβl
c) jZ0cotβl
d) – jZ0cotβl
31. 4. If a ƛ/3 transmission line is short circuited that has a characteristic impedance of 50
Ω, then its input impedance is:
a) -j100Ω
b) 50Ω
c) 86.60Ω
d) –j86.60Ω
32. 7. For a λ/2 transmission line, if the characteristic impedance of the line is 50 Ω and the
terminated with a load of 100 Ω, then its input impedance is:
a) 100Ω
b) 50Ω
c) 88.86Ω
33. 8. If a λ/3 transmission line is open circuited and has characteristic impedance of 50 Ω
then the input impedance is:
a) j28.86Ω
b) 50Ω
c) j50Ω
d) 28.86Ω
34. 9. Expression for a transmission co-efficient of a transmission line is :
a) 2ZL/ ( ZL+Z0)
b) (ZL-Z0)/ (ZL+Z0)
c) 2Z0/( ZL+Z0)
d) (ZL+Z0)/ (ZL-Z0)
35. 10. For a transmission line, if the reflection coefficient is 0.4, then the transmission
coefficient is:
a) 0.4
b) 1.4
c) 0.8
d) 2.8
36. 11. If the transmission coefficient of a transmission line is 1.6, then the reflection co
efficient is:
a) 0.8
b) 0.6
c) 0.4
d) 0.3
37. 12. For a transmission line, if the transmission coefficient is 1.4, then the insertion loss
in dB is:
a) -2.922dB
b) 29dB
c) 1.46dB
d) -29dB
38. 13. The relation between nepers and decibels is:
a) 1 Np= 8.686 dB
b) 1 dB=8.868 dB
c) Np≥dB
d) dB≥Np
39. 4. If there is no standing wave on a transmission line, then the value of SWR is:
a) 1
b) 0
c) Infinity
d) Insufficient data
40. 1. When a load is matched to a transmission line, the condition that is satisfied when
matched is:
a) ZL=Z0
b) ZL=2Z00
c) ZL=Zin
d) ZL=2Zin
41. 2. When a load ZL is matched to a line, the value of standing wave ratio is:
a) 1
b) 0
c) infinity
d) insufficient data to calculate SWR
42. 3. The value of reflection co efficient when a transmission line is matched to the load is:
a) 1
b) 0
c) 0.707
d) cannot be determined
43. 4. The value of transmission co efficient when a transmission line is matched to a load
is:
a) 1
b) 0
c) 0.5
d) 0.707
44. 1. For a low loss line when both conductor and di-electric loss is small, the assumption
that could be made is:
a) R < < ωL and G < < ωC
b) R > > ωL and G > >ωC
c) R < <ωC and G < < ωL
d) R > >ωC and G > >ωL
45. 2. Expression for α(attenuation constant) in terms of R , G, L and C of a transmission
line is:
a) (R√(C/L)+G√(L/C))0.5
b) (R√(C/L)+G√(L/C))
c) (R√(L/C)+G√(C/L))
d) (R√(L/C)+G√(C/L))0.5
46. 3. Expression for characteristic impedance Zₒ of a transmission line in terms of L and C
the transmission line is:
a) √(C/L)
b) √(CL)
c) √(L/C)
d) 1/√(LC)
47. 7. A lossy line that has a linear phase factor as a function of frequency is called:
a) distortion less line
b) terminated lossy line
c) loss less line
d) lossy line
48. 8. The condition for a distortion less line is:
a) R/L=G/C
b) R/C=G/L
c) R=G
d) C=L
General Solutions-TE,TEM,TM Waves
1. Maxwell’s equation for electromagnetic waves in a waveguide is:
a) ∇×E = -jωµ(vector H)
b) ∇×E =-jωμ(vector E)
c) ∇×H=-jωμ(vector H)
d) ∇×H=jωμ(vector H)
2. 2. If the wavelength of a signal is 10 mm, then the wavenumber of the material when a
waveguide is filled with that material is:
a) 628
b) 345
c) 123
3. 3. If a waveguide is filled with a lossy material then the expression for ∈ for that material
is:
a) ∈=∈∈r(1-jtan δ)
b) ∈= ∈ₒ∈r (1/ j tanδ)
c) ∈=∈ₒ∈r/(1+ j tan δ )
d) ∈=∈ₒ∈r/(1-j tan δ )
4. 4. If a waveguide is filled with a lossless material of relative permeability 2, then the
wave impedance in the TEM mode is:
a) 188.5 Ω
b) 170 Ω
c) 123 Ω
d) 345 Ω
5. 5. If the wave impedance of a medium is 200 Ω, then what is the relative permittivity of
that medium?
a) 1.885
b) 2
c) 2.2
d) 2.5
6. 6. If p=0.3 and the wave number of air in TM mode is 16, then the intrinsic impedance of
air in TM mode given wave number is 125 is:
a) 1 Ω
b) 0.9 Ω
c) 0.8 Ω
d) 2 Ω
7. 7. If the intrinsic impedance of a medium is 0.8 Ω, with wave number 125 and β being
0.2, then the relative permeability of the medium is:
a) 1.326
b) 2.34
c) 4.5
d) 6.7
8. 8. The losses that occur in a transmission line is:
a) Conduction losses
b) Di-electric loss
c) Both of the mentioned
9. 9. Which of the following is true regarding attenuation?
a) Conductor loss
b) Di-electric loss
c) Sum of both conductor loss and di electric loss
d) Attenuation is different from the losses
10. 10. If the wave number of a medium is 20 and loss tangent is 0.4 , then the dielectric
loss caused by the medium is:
a) 4
b) 2
c) 3
d) 6
11. 11. If the dielectric loss of a medium is 0.2 Np/m with a wave number of 12, then the
value of loss tangent is:
a) 0.0334
b) 0.05
c) 0.08
d) 0.09
12. 1. The modes of propagation supported by a rectangular wave guide is:
a) TM, TEM, TE modes
b) TM, TE
c) TM, TEM
d) TE, TEM
13. 2. A hollow rectangular waveguide cannot propagate TEM waves because:
a) Of the existence of only one conductor
b) Of the losses caused
c) It is dependent on the type of the material used
14. 3. For any mode of propagation in a rectangular waveguide, propagation occurs:
a) Above the cut off frequency
b) Below the cut off frequency
c) Only at the cut-off frequency
d) Depends on the dimension of the waveguide
15. 4. In TE mode of wave propagation in a rectangular waveguide, what is the equation
that has to be satisfied?
a) (∂2/ ∂x2 + ∂2/ ∂y2+ kC2).HZ(x, y) =0
b) (∂2/ ∂x2 + ∂2/ ∂y2– kC2).HZ(x, y) =0
c) (∂2/ ∂x2 – ∂2/ ∂y2+ kC2).HZ(x, y) =0
16. 5. Dominant mode is defined as:
a) Mode with the lowest cut off frequency
b) Mode with the highest cut off frequency
c) Any TEM mode is called a dominant mode
17. 6. For TE1ₒ mode, if the waveguide is filled with air and the broader dimension of the
waveguide is 2 cm, then the cutoff frequency is:
a) 5 MHz
b) 7.5 MHz
c) 7.5 GHz
d) 5 GHz
18. 7. TEₒₒ mode for a rectangular waveguide:
a) Exists
b) Exists but defined only under special cases
c) Does not exist
d) Cannot be determined
19. 8. For dominant mode propagation in TE mode, if the rectangular waveguide has a
broader dimension of 31.14 mm , then the cutoff wave number:
a) 100
b) 500
c) 50
d) 1000
20. 9. The lowest mode of TM wave propagation is:
a) TM10 mode
b) TM01 mode
c) TM11 mode
d) TM12 mode
21. 10. The cutoff frequency for the dominant mode in TM mode propagation for a
rectangular waveguide of dimension of 30mm*40mm is:
a) 2 GHz
b) 1 GHz
c) 2 MHz
d) 4 MHz
22. 11. In TE10 mode of wave propagation in a rectangular waveguide, if the broader
dimension of the waveguide is 40 cm, then the cutoff wavelength for that mode is:
a) 8 cm
b) 6 cm
c) 4 cm
d) 2 cm
23. 12. In TE01 mode of wave propagation in a rectangular waveguide, if the smaller
dimension of the waveguide is 2 cm, then the cutoff wavelength for that mode is:
a) 4 cm
b) 8 cm
c) 1 cm
d) 2 cm
24. 1. What are the modes of propagation that a co axial line supports?
a) TM, TE mode
b) TM, TE, TEM mode
c) TM, TEM mode
d) TE, TEM mode
25. 2. The dominant waveguide mode of a co axial line is:
a) TE11 mode
b) TE01 mode
c) TM01 mode
d) TEM mode
26. 6. In television systems the characteristic impedance of the cables used is:
a) 75Ω
b) 150Ω
c) 100Ω
d) 50Ω
27. 7. SWR standing wave ratio has to be ________for co axial connector.
a) Low
b) High
c) Infinite
d) Cannot be calculated
28. 8. What are the connectors used in pairs called?
a) Jack and plug
b) Male and female connectors
c) Both the mentioned
29. 1. Which mode of propagation is supported by a strip line?
a) TEM mode
b) TM mode
c) TE mode
30. 2. The higher order wave guide modes of propagation can be avoided in a strip line by:
a) Restricting both the ground plate spacing and the sidewall width to less than
λd/2
b) Restricting both the ground facing plate spacing and the sidewall width to less than λ d
c) Filling the region between 2 plates with di electric
d) Restricting both the ground plate spacing and the sidewall width between λ g and λg/2
31. 3. Stripline can be compared to a:
a) Flattened rectangular waveguide
b) Flattened circular waveguide
c) Flattened co axial cable
32. 4. If the dielectric material filled between the round plates of a microstrip line has a
relative permittivity of 2.4, then the phase velocity is:
a) 1.3*108 m/s
b) 1.9*108 m/s
c) 3*108 m/s
d) 2*108 m/s
33. 5. Expression for propagation constant β of a strip line is:
a) ω(√µ∈∈r)
b) ω(√µₒ/√∈r)
c) ω/(√µₒ∈ₒ∈r)
d)c/(√µₒ∈ₒ∈r)
34. 6. If the phase velocity in a stripline is 2.4*10 8m/s, and the capacitance per unit length of
a micro stripline is 10pF/m, then the characteristic impedance of the line:
a) 50 Ω
b) 41.6 Ω
c) 100 Ω
35. 7. The expression for characteristic impedance Zₒ of a stripline is:
a) (30πb/√∈r)(1/We+0.441b)
b) (30πb) (1/W e+0.441b)
c) 30π/√∈r
d) (1/W e+0.441b)
36. 8. If the effective width of the center conductor is 3 mm and the distance between the
two ground plates is 0.32 cm with the material of the dielectric used having a relative
permittivity of 2.5, then what is the characteristic impedance of the strip line?
a) 50Ω
b) 71.071Ω
c) 43.24Ω
d) 121Ω
37. 9. The wave number of a stripline operating at a frequency of 10 GHz is:
a) 401
b) 155
c) 206
d) 310
38. 10. If the loss tangent is 0.001 for a stripline operating at 12 GHz with the relative
permittivity of the dielectric material being used equal to 2.6, then the conductor loss is:
a) 0.102
b) 0.202
c) 0.001
d) 0.002
39. 11. If the dielectric material used between the grounded plates of a stripline is 2.2, when
the strip line operating at 8 GHz, the wavelength on stripline is:
a) 1.2 cm
b) 2.52 cm
c) 0.15 cm
d) 3.2 cm
40. 12. Fields of TEM mode on strip line must satisfy:
a) Laplace’s equation
b) Ampere’s circuital law
c) Gaussian law
41. 1. Micro strip can be fabricated using:
a) Photo lithographic process
b) Electrochemical process
c) Mechanical methods
42. 2. The mode of propagation in a microstrip line is:
a) Quasi TEM mode
b) TEM mode
c) TM mode
d) TE mode
43. 3. Microstrip line can support a pure TEM wave.
a) True
b) False
c) Microstrip supports only TM mode
d) Microstrip supports only TE mode
44. 4. The effective di electric constant of a microstrip line is:
a) Equal to one
b) Equal to the permittivity of the material
c) Cannot be predicted
d) Lies between 1 and the relative permittivity of the micro strip line
45. 5. Effective dielectric constant of a microstrip is given by:
a) (∈r + 1)/2 + (∈r-1)/2 * 1/ (√1+12d/w)
b) (∈r+1)/2 + (∈r-1)/2
c) (∈r+1)/2 (1/√1+12d/w)
d) (∈r + 1)/2-(∈r-1)/2
46. 6. The effective dielectric constant of a micro strip line is 2.4, then the phase velocity in
the micro strip line is given by:
a) 1.5*108 m/s
b) 1.936*108 m/s
c) 3*108 m/s
47. 7. The effective di electric constant of a micro strip line with relative permittivity being
equal to 2.6, with a width of 5mm and thickness equal to 8mm is given by:
a) 2.6
b) 1.97
c) 1
d) 2.43
48. 8. If the wave number of an EM wave is 301/m in air , then the propagation constant β
on a micro strip line with effective di electric constant 2.8 is:
a) 602
b) 503.669
c) 150
d) 200
49. 9. For most of the micro strip substrates:
a) Conductor loss is more significant than di electric loss
b) Di electric loss is more significant than conductor loss
c) Conductor loss is not significant
d) Di-electric loss is less significant
50. 10. The wave number in air for EM wave propagating on a micro strip line operating at
10GHz is given by:
a) 200
b) 211
c) 312
d) 209
51. 11. The effective dielectric constant ∈r for a microstrip line:
a) Varies with frequency
b) Independent of frequency
c) It is a constant for a certain material
d) Depends on the material used to make microstrip
52. 12. With an increase in the operating frequency of a micro strip line, the effective di
electric constant of a micro strip line:
a) Increases
b) Decreases
c) Independent of frequency
d) Depends on the material of the substrate used as the microstrip line
3. Microwave Network Analysis
1. The one below among others is not a type TEM line used in microwave networks:
a) Co-axial wire
b) Micro strip line
c) Strip lines
d) Surface guide
2. The one below is the only micro wave network element that is a TEM line:
a) Co-axial cable
b) Rectangular wave guide
c) Circular wave guide
d) Surface wave guide
3. The relation between voltage, current and impedance matrices of a microwave

network is:
a) [V] = [Z][I]
b) [Z] = [V][I]
c) [I] = [Z][V]
d) [V] = [Z]-[I]
4. The relation between voltage, current and admittance matrices of a microwave

network is:
a) [I] = [Y] [V]
b) [Y] = [V] [I]
c) [I] = [Z] [V]
d) [V] = [Z]-1[I]
5. Admittance and impedance matrices of a micro waves network are related as:
a) [Y] = [Z]-1
b) [Y] = [Z]
c) [V] = [Z] [Z]-1
d) [Z] = [V] [V]-1
6. The element of a Z matrix, Z ij can be given in terms of voltage and current of a

microwave network as:
a) ZIJ = VI/IJ
b) ZIJ = VIIJ
c) 1//ZIJ = 1/JIVI
d) VIJ = IJ/JI
7. In a two port network, if current at port 2 is 2A and voltage at port 1 is 4V, then the
impedance Z₁₂ is:
a) 2 Ω
b) 8 Ω
c) 0.5 Ω
8. In a 2 port network, if current at port 2 is 2A and voltage at port 1 is 4 V, then the
admittance Y₂₁ is:
a) 0.5 Ʊ
b) 8 Ʊ
c) 2 Ʊ
d) 4 Ʊ
9. For a reciprocal network, Z matrix is:

a) A unit matrix
b) Null matrix
c) Skew symmetric matrix
d) Symmetric matrix
10. For a lossless network, the impedance and admittance matrices are:
a) Real
b) Purely imaginary
c) Complex
d) Rational
11. The matrix with impedance parameters Z₁₁=1+j, Z₁₂=4+j, Z₂₂=1, Z21=4+j is said to
be
a) Reciprocal network
b) Lossless network
c) Lossy network
1. S parameters are expressed as a ratio of:

a) Voltage and current
b) Impedance at different ports
c) Indecent and the reflected voltage waves
2. The relation between incident voltage matrix , reflected voltage matrix and S matrix
for a microwave network:
a) [v-] = [s] [v+].
b) [v+] = [s] [v-].
c) [v-] [v] = [s].
d) [s] = [v] [v-].
3. The specific element Sij of the scattering matrix can be determined as:
a) SIJ= Vi-/Vj+
b) SIJ= Vi+/Vj-
c) S= Vj+/Vi-
4. The device used to get the measurement of S parameters of n- port micro wave
network is:
a) CRO
b) Network analyzer
c) Circulator
d) Attenuator
5. For a one port network , the scattering parameter S₁₁ in terms of impedance
parameter Z₁₁ is:
a) (Z11-1)/ (Z11+1)
b) (Z11+1)/ (Z11-1)
c) (Z11+1) (Z11-1)
d) Z11
6. Scattering matrix for a reciprocal network is:

a) Symmetric
b) Unitary
c) Skew symmetric
d) Identity matrix
7. S₁₂=0.85-45⁰ and S₁₂=0.85 +45⁰ for a two port network. Then the two port network is:
a) Non-reciprocal
b) Lossless
c) Reciprocal
d) Lossy
8. Scattering matrix for a lossless matrix is:

a) Unitary
b) Symmetric
c) Identity matrix
d) Null matrix
9. If the reflection co efficient of a 2 port network is 0.5 then the return network loss in
the network is:
a) 6.5 dB
b) 0.15 dB
c) 6.020 dB
d) 10 dB
10. If the reflection co efficient of a 2 port network is 0.25 then the return network loss in
the network is:
a) 12.05 dB
b) 0.15 dB
c) 20 dB
d) 10 dB
1. ABCD matrix is used:

a) When there is two or more port networks in the cascade
b) To represent a 2 port network
c) To represent a 2 port network
d) To represent the impedance of a microwave network
2. The voltage equation for a 2 port network that can be represented as a matrix is:
a) V1=AV2 + BI2
b) V1=CV2 + DI2
c) V1=BV2 +AI2
d) V1=DV2+CI2
3. ABCD matrix of the cascade connection of 2 networks is equal to:
a) Product of ABCD matrices representing the individual two ports
b) Sum of the ABCD matrices representing the individual two ports
c) Difference of the ABCD matrices representing the individual two ports
d) Sum of transpose of ABCD matrices representing the individual two ports
4. For simple impedance Z, the ABCD parameters are:

a) A=1, Z=B, C=0, D=1
b) A=0, B=1, C=1, D=0
c) A=Z, B=1, C=1, D=0
5. For a simple admittance Y, the ABCD parameters are:

a) A=1, B=0, C=Y, D=1
b) A=Z, B=1, C=1, D=0
c) A=1, B=0, C=Z, D=1
d) A=1, Y=B, C=0, D=1d) A=1, B=0, C=Z, D=1
6. C parameter for a transmission line of characteristic impedance Zₒ, phase constant β

and length ‘l’ is:
a) j Yₒ Sin βl
b) j Zₒ Sin βl
c) j Zₒ tan βl
d) j Yₒ tan βl
7. For a 2 port network if Z₁₁=1.5 and Z₁₂=1.2, A parameter for the same 2 port network
is:
a) 1.5
b) 1.25
c) 0.75
d) 1.75
8. For a 2 port network, if the admittance parameter Y₁₂=0.4, then B among the ABCD,
parameters for the 2 port network is:
a) 2.5
b) 4.5
c) 5
d) 6
9. If D=1.6 and B=2.8 for a 2 port network, then Y₁₁=?

a) 0.5714
b) 0.987
c) 0.786
d) 1.75
10. If A=2.8 and B=1.4 for a 2 port network then Z₁₁=?

a) 0.5
b) 2
c) 4.2
d) 2.7
1. The matched network is placed between:

a) load and transmission line
b) source and the transmission line
c) source and the load
2. When a transmission line is matched to a load using a matched network, reflected

waves are present:
a) between the load and the matched network
b) between the matched network and the transmission line
c) between the source and the transmission line
d) between the matched network and source
3. Impedance matching sensitive receiver components may improve the _____ of the
system.
a) noise
b) SNR
c) amplification factor
d) thermal noise
4. One of the most important factors to be considered in the selection of a particular

matching network is:
a) noise component
b) amplification factor
c) bandwidth
5. The simplest type of matching network, L section consists of _______ reactive

elements.
a) one
b) two
c) four
d) six
6. The major limitation of a lumped elements matching ‘L’ network is:

a) they are not equally efficient at higher frequencies as they are at lower
frequencies.
b) size of the network
c) they restrict flow of current
7. An ‘L’ network is required to match a load impedance of 40Ω to a transmission line of

characteristic impedance 60Ω. The components of the L network are:
a) 28.28+j0 Ω
b) 28.28+j1 Ω
c) 50Ω
d) 48.9Ω
8. The imaginary part of the matching network is given by the relation:

a) ±(√(Z0– RL)/RL)Z00
b) ±(√(Z0– RL)/RL)
c) ±(√(Z0– RL)/ Z0
9. Which of the following material is not used in the fabrication of resistors of thin films?
a) nichrome
b) tantalum nitride
c) doped semiconductor
d) pure silicon
10. Large values of inductance can be realized by:

a) loop of transmission line
b) spiral inductor
c) coils of wires
11. A short transmission line stub can be used to provide a shunt capacitance of:
a) 0-0.1µF
b) 0-0.1pF
c) 0-0.1nF
d) 1-10pF
3. In the multiple reflections analysis method, the total reflection is:

a) An infinite sum of partial reflections
b) An infinite sum of partial reflection and transmissions
c) Constant value
d) Finite sum of partial reflections
4. The expression for total reflection in the simplified form is given by:
a) Г=Г1+ Г3e-2jθ
b) Г=Г11+Г3
c) Г=Г12+ Г3e-2jθ
d) Г= Г1+ Г2e-2jθ
7. If a λ/4 transmission line is used for impedance matching, then always Г 1> Г3.
a) True
b) False
8. To compute the total reflection of a multi-section transmission line, the lengths of the
transmission lines considered are all unequal.
a) True
b) False
9. If ZL< Z0, then the reflection coefficient at that junction is:

a) ГN<0
b) ГN>0
c) ГN>1
1. Slotted line is a transmission line configuration that allows the sampling of:
a) electric field amplitude of a standing wave on a terminated line
b) magnetic field amplitude of a standing wave on a terminated line
c) voltage used for excitation
d) current that is generated by the source
2. A slotted line can be used to measure _____ and the distance of _____________
from the load.
a) SWR, first voltage minimum
b) SWR, first voltage maximum
c) characteristic impedance, first voltage minimum
d) characteristic impedance, first voltage maximum
3. A modern device that replaces a slotted line is:

a) Digital CRO
b) generators
c) network analyzers
d) computers
4. If the standing wave ratio for a transmission line is 1.4, then the reflection coefficient
for the line is:
a) 0.16667
b) 1.6667
c) 0.01667
d) 0.96
5. If the reflection coefficient of a transmission line is 0.4, then the standing wave ratio
is:
a) 1.3333
b) 2.3333
c) 0.4
d) 0.6
6. Expression for ϴ means phase angle of the reflection co efficient r=|r|-e^jθ, the phase
of the reflection co-efficient is:
a) θ=2π+2βLmin
b) θ=π+2βLmin
c) θ=π/2+2βLmin
d) θ=π+βLmin
7. In the expression for phase of the reflection coefficient, L min stands for :
a) distance between load and first voltage minimum
b) distance between load and first voltage maximum
c) distance between consecutive minimas
d) distance between a minima and immediate maxima
8. If SWR=1.5 with a wavelength of 4 cm and the distance between load and first
minima is 1.48cm, then the reflection coefficient is:
a) 0.0126+j0.1996
b) 0.0128
c) 0.26+j0.16
9. If the characteristic impedance of a transmission line 50 Ω and reflection coefficient is

0.0126+j0.1996, then load impedance is:
a) 47.3+j19.7Ω
b) 4.7+j1.97Ω
c) 0.26+j0.16
d) data insufficient
10. If the normalized load impedance of a transmission line is 2, then the reflection co-
efficient is:
a) 0.33334
b) 1.33334
c) 0
d) 1
4. If a device is passive and contains no anisotropic elements, then the device

is_______ network.
a) Reciprocal
b) Non reciprocal
c) Lossless
d) Lossy
.
5. Scattering matrix of a reciprocal network is:
a) Symmetric
b) Asymmetric
c) Identity matrix
d) Null matrix
6. If all the ports of a microwave network are matched, then the diagonal elements of
the S matrix of the network is zero.
a) True
b) False
7. If a microwave network is lossless, then S matrix of the microwave network is:

a) Unitary
b) Symmetric
c) Identity matrix
d) Zero matrix
8. A lossless reciprocal 3 port network can be matched at all the three ports.
a) True
b) False
9. A circulator is a 3 port network that allows energy flow in clockwise direction only.
a) True
b) False
10. The diagonal elements of the S matrix of an improperly matched circulator is zero.
a) True
b) False
View Answer
11. Coupling factor of a directional coupler must be maximum and is a key factor that
determines the performance of the coupler.
a) True
b) False
12. Directivity of a directional coupler signifies the direction of power flow in the coupler.
a) True
b) False
13. Isolation of a directional coupler is a measure of the:

a) Power delivered to the uncoupled port
b) Power delivered to the coupled port
c) Power delivered to the second port
14. Insertion loss is the power delivered to the through port.

a) True
b) False
15. In a symmetric coupler, the power delivered to the through port and output port are
equal.
a) True
b) False
8. _________ is a key component in the scalar or vector network analyzer.

a) Reflectometer
b) Radiometer
c) Frequency meter
9. Reflectometer can also be used as a frequency meter.

a) True
b) False
10. A basic Reflectometer circuit can be used to measure the _____________

magnitude of the unknown load.
a) Reflection coefficient
b) Standing wave ratio
c) Transmission coefficient
1. Example of a non reciprocal device:

a) Branch line coupler
b) Wilkinson coupler
c) Magic-T hybrid
d) Circulator
2. A microwave network can be called non reciprocal only if it contains anisotropic

materials like ferrite materials.
a) True
b) False
4. The magnetic properties of a material are due to the existence of ___________

a) Electrons in atoms
b) Electric dipole moment
c) Magnetic dipole moment
7. The variation of magnetic moment of a ferromagnetic material with applied bias field
is linear.
a) True
b) False
8. A permanent magnet is made by placing the magnetic material in a strong magnetic
field.
a) True
b) False
1. Ferrite isolators are ____ port microwave devices.

a) Two
b) Three
c) Four
2. The matrix of an ideal isolator is not ______

a) Unitary
b) Symmetric
c) Lossless
3. A very common application of isolator is to provide isolation between a low power

source and the load.
a) True
b) False
4. The attenuation of a ________ is very large near the gyro magnetic resonance of the
ferrite.
a) Linearly polarized wave
b) Circularly polarized wave
c) Left polarized wave
d) Right polarized wave
5. The isolators constructed using ferrite materials must operate at:

a) Gyro magnetic resonance
b) Magnetic resonance
c) Isolator resonance
6. Forward attenuation provided by a resonance ferrite isolator is:

a) Zero
b) Low
c) High
7. An isolator has a very large operating bandwidth and independent of any isolator
parameter.
a) True
b) False
8. The length of a ferrite slab required operating with a minimum forward insertion loss
and 30 dB reverse attenuation and the reverse attenuation at this point is:
a) 3 cm
b) 2.4 cm
c) 4 cm
d) 3.6 cm
9. The electric field distribution of the forward and reverse waves in a ferrite slab-loaded
waveguide is quite different. This property is used in:
a) Field displacement resonator
b) Resonance isolator
c) Waveguide isolator
10. Field displacement isolators require higher bias field than resonance isolators.
a) True
b) False
1. ________ is a three-port microwave device that can be lossless and matched at all
spots.
a) Hybrid junction
b) Magic Tee
c) Circulator
d) Isolator
2. The total number of ones in the scattering matrix of an ideal circulator is:
a) 4
b) 3
c) 2
d) 5
3. There is no method in which the scattering matrix of the opposite circularity can be
obtained from the matrix we have.
a) True
b) False
4. Practically, opposite circulatory in a ferrite circulator can be obtained by:

a) Changing the order of port operation
b) Impedance matching the input ports
c) Changing the polarity of the magnetic bias field
5. A circulator device can also used as an isolator with a few modifications.

a) True
b) False
6. In the scattering matrix representation of a non-ideal circulator, the diagonal elements

of the matrix are:
a) Zero
b) One
c) Reflection coefficient Г
7. In a stripline junction circulator, the ferrite material is present in the form of a:

a) Slab
b) Ferrite disk
c) Ferrite material is not used in a microstrip circulator
d) Ferrite cubes
8. The dielectric resonator in the circulator has a single highest order resonant mode.
a) True
b) False
9. In the plot of the magnitude of electric field around the periphery of the junction
circulator, the curve has:
a) Three peaks
b) Two peaks
c) Four peaks
10. In the non-ideal scattering matrix representation of the circulator, the attenuation
constant and phase constant α, β respectively are approximated as 1.
a) True
b) False
1. A PIN diode consists of ______number of semiconductor layers.

a) Three
b) Two
c) Four
d) One
2. The material out of which PIN diode is made is:

a) Silicon
b) Germanium
c) GaAs
3. The behavior of a PIN diode is entirely different from normal diodes at all frequency of
operation.
a) True
b) False
4. The junction resistance and capacitance of the intrinsic region in a PIN diode are
connected______ in the equivalent circuit of PIN diode.
a) Series
b) Parallel
c) Connected across package capacitance
5. The resistance of the PIN diode with positive bias voltage:

a) Increases
b) Decreases
c) Remains constant
6. A PIN diode can be used in either a series or a shunt configuration to form a

__________
a) Single pole single throw switch
b) Single pole double throw switch
c) Amplifier
d) Oscillator
7. The working principle of series and shunt configuration single pole single throw
switch is the same.
a) True
b) False
8. Under ideal conditions, when a PIN diode is used as a switch, the switch must have
_______ insertion loss in the ON state.
a) Maximum
b) Zero
c) Average
d) Insertion loss cannot be defined for a switch
9. When PIN diode is used as a switch, the expression for insertion loss of the switch is
given by:
a) 10 log (Po/PL)
b) 10 log (PL/P0)
c) 10 log (PL. Pₒ)
View Answer
10. For a shunt configuration switch, the diode impedance is 40 Ω and the terminated
line characteristic impedance is 50 Ω. Then the insertion loss of the switch is:
a) 2.2 dB
b) 4.2 dB
c) 8.4 dB
d) 3.6 dB
11. In the series configuration of a PIN diode switch, the terminated load impedance
was found to be 50 Ω and the diode impedance was 60 Ω. Then the insertion loss of the
switch is:
a) 4 dB
b) 2 dB
c) 3.6 dB
d) 4.8 dB
12. The number of PIN diodes used in SPST switch and SPDT switch are the same.
a) True
b) False
1. Varactor diode is a semiconductor diode in which the _________ can be varied as a

function of reverse voltage of the diode.
a) Junction resistance
b) Junction capacitance
c) Junction impedance
2. Any semiconductor diode has a junction capacitance varying with reverse bias. If
such a diode has microwave characteristics, it is called:
a) IMPATT diode
b) TRAPITT diode
c) SKOTTKY diode
3. The width of depletion region of a varactor diode ________with increase in reverse

bias voltage.
a) Increases
b) Decreases
c) Remains constant
4. Diffused junction mesa silicon diodes are widely used at microwave frequencies.
a) True
b) False
5. Varactors made of ______ have higher frequency range of operation compared to

silicon fabricated varactor diodes.
a) Germanium
b) GaAs
c) GaN
6. Varactor diodes are operated in _________ region to achieve maximum efficiency
possible.
a) Cutoff region
b) Saturation region
c) Reverse saturation region
d) Active region
7. The cutoff frequency for operation of a varactor diode at a specific bias is given by:
a) 1/2πRSCjv
b) 1/2πCSRjv
c) 1/2π√LC
1. Silicon and germanium are called ___________ semiconductors.

a) direct gap
b) indirect gap
c) band gap
d) indirect band gap
2. GaAs is used in the fabrication of GUNN diodes because:

a) GaAs is cost effective
b) It less temperature sensitive
c) it has low conduction band electrons
d) less forbidden energy gap
3. In a GaAs n-type specimen, the current generated is constant irrespective of the

electric filed applied to the specimen.
a) true
b) false
4. When the electric field applied to GaAs specimen is less than the threshold electric
field, the current in the material:
a) increases linearly
b) decreases linearly
c) increases exponentially
d) decreases exponentially
5. When the applied electric field exceeds the threshold value, electrons absorb more
energy from the field and become:
a) hot electrons
b) cold electrons
c) emission electrons
6. GaAs is used in fabricating Gunn diode. Gunn diode is:

a) bulk device
b) sliced device
c) made of different type of semiconductor layers
7. The electrodes of a Gunn diode are made of:

a) molybdenum
b) GaAs
c) gold
d) copper
8. When either a voltage or current is applied to the terminals of bulk solid state
compound GaAs, a differential ______ is developed in that bulk device.
a) negative resistance
b) positive resistance
c) negative voltage
9. The number of modes of operation for n type GaAs is:

a) two
b) three
c) four
d) five
10. The free electron concentration in N-type GaAs is controlled by:

a) effective doping
b) bias voltage
c) drive current
11. The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to
the Gunn diode v/s frequency of operation of Gunn diode.
a) true
b) false
12. The mode of operation in which the Gunn diode is not stable is:
a) Gunn oscillation mode
b) limited space charge accumulation mode
c) stable amplification mode
d) bias circuit oscillation mode
13. The frequency of oscillation in Gunn diode is given by:

a) vdom/ Leff
b) Leff/ Vdom
c) Leff/ WVdom
14. In Gunn diode oscillator, the Gunn diode is inserted into a waveguide cavity formed
by a short circuit termination at one end
a) true
b) false
15. In a Gunn diode oscillator, the electron drift velocity was found to be 107 cm/second
and the effective length is 20 microns, then the intrinsic frequency is:
a) 5 GHz
b) 6 GHz
c) 4 GHz
d) 2 GHz
1. The material used to fabricate IMPATT diodes is GaAs since they have the highest
efficiency in all aspects.
a) true
b) false
2. When a reverse bias voltage exceeding the breakdown voltage is applied to an

IMPATT diode, it results in:
a) avalanche multiplication
b) break down of depletion region
c) high reverse saturation current
3. To prevent an IMPATT diode from burning, a constant bias source is used to

maintain _______ at safe limit.
a) average current
b) average voltage
c) average bias voltage
d) average resistance
4. The number of semiconductor layers in IMPATT diode is:

a) two
b) three
c) four
5. The resonant frequency of an IMPATT diode is given by:

a) Vd/2l
b) Vd/l
c) Vd/2πl
d) Vdd/4πl
6. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift
velocity are 107 cm/s, then the drift time of the carrier is:
a) 10-11 seconds
b) 2×10-11 seconds
c) 2.5×10-11 seconds
View Answer
7. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift
velocity are 107 cm/s, then the nominal frequency of the diode is:
a) 12 GHz
b) 25 GHz
c) 30 GHz
d) 24 GHz
8. IMPATT diodes employ impact ionization technique which is a noisy mechanism of

generating charge carriers.
a) true
b) false
9. An essential requirement for the BARITT diode is that the intermediate drift region be
completely filled to cause the punch through to occur.
a) true
b) false
10. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6
watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:
a) 10.1 %
b) 10.21 %
c) 12 %
d) 15.2 %
11. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20
microns, then the critical voltage is:
a) 3.2 V
b) 6.4 V
c) 2.4 V
d) 6.5 V
1. Classical p-n junction diode cannot be used for high frequency applications because
of:
a) High bias voltage
b) High junction capacitance
c) Frequency sensitive
d) High forward biased current
5. The number of semiconductor layers in a TRAPATT diode is:

a) Two
b) Three
c) Four
d) One
6. In order to achieve high current density, a compromise in _______is made in a

TRAPATT diode.
a) Gain
b) Size
c) Operating frequency
d) No compromise is made on any of the parameter
7. TRAPATT diode is normally mounted at a point inside a coaxial resonator where

there is minimum RF voltage swing.
a) True
b) False
8. A major disadvantage of TRAPATT diode is:

a) Fabrication is costly
b) Low operational bandwidth
c) Low gain
d) High noise figure
11. A tunnel diode is a p-n junction diode with a doping profile that allows electron
tunneling through a narrow energy band gap.
a) True
b) false
1. The production of power at higher frequencies is much simpler than production of

power at low frequencies.
a) True
b) False
2. Microwave tubes are power sources themselves at higher frequencies and can be
used independently without any other devices.
a) True
b) False
3. Microwave tubes are grouped into two categories depending on the type of:
a) Electron beam field interaction
b) Amplification method
c) Power gain achieved
d) Construction methods
4. The klystron tube used in a klystron amplifier is a _________ type beam amplifier.
a) Linear beam
b) Crossed field
c) Parallel field
5. In crossed field tubes, the electron beam traverses the length of the tube and is
parallel to the electric field.
a) True
b) False
6. ________ is a single cavity klystron tube that operates as on oscillator by using a

reflector electrode after the cavity.
a) Backward wave oscillator
b) Reflex klystron
c) Travelling wave tube
d) Magnetrons
7. A major disadvantage of klystron amplifier is:

a) Low power gain
b) Low bandwidth
c) High source power
d) Design complexity
8. In a _________ oscillator, the RF wave travels along the helix from the collector
towards the electron gun.
a) Interaction oscillator
b) Backward wave oscillator
c) Magnetrons
d) None o the mentioned
9. Extended interaction oscillator is a ________ beam oscillator that is similar to

klystron.
a) Linear beam
b) Crossed beam
c) Parallel beam
d) M beam
10. Magnetrons are microwave devices that offer very high efficiencies of about 80%.
a) True
b) False
11. Klystron amplifiers have high noise output as compared to crossed field amplifiers.
a) True
b) False
12. ____________ is a microwave device in which the frequency of operation is

determined by the biasing field strength.
a) VTM
b) Gyratron
c) Helix BWO

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Sanfoundary

Lumped Element Circuit Model of Transmission Line

3. Microwave Network Analysis

3. The relation between voltage, current and impedance matrices of a microwave

4. The relation between voltage, current and admittance matrices of a microwave

6. The element of a Z matrix, Z ij can be given in terms of voltage and current of a

9. For a reciprocal network, Z matrix is:

1. S parameters are expressed as a ratio of:

6. Scattering matrix for a reciprocal network is:

8. Scattering matrix for a lossless matrix is:

1. ABCD matrix is used:

4. For simple impedance Z, the ABCD parameters are:

5. For a simple admittance Y, the ABCD parameters are:

6. C parameter for a transmission line of characteristic impedance Zₒ, phase constant β

9. If D=1.6 and B=2.8 for a 2 port network, then Y₁₁=?

10. If A=2.8 and B=1.4 for a 2 port network then Z₁₁=?

1. The matched network is placed between:

2. When a transmission line is matched to a load using a matched network, reflected

4. One of the most important factors to be considered in the selection of a particular

5. The simplest type of matching network, L section consists of _______ reactive

6. The major limitation of a lumped elements matching ‘L’ network is:

7. An ‘L’ network is required to match a load impedance of 40Ω to a transmission line of

8. The imaginary part of the matching network is given by the relation:

10. Large values of inductance can be realized by:

3. In the multiple reflections analysis method, the total reflection is:

9. If ZL< Z0, then the reflection coefficient at that junction is:

3. A modern device that replaces a slotted line is:

9. If the characteristic impedance of a transmission line 50 Ω and reflection coefficient is

4. If a device is passive and contains no anisotropic elements, then the device

7. If a microwave network is lossless, then S matrix of the microwave network is:

13. Isolation of a directional coupler is a measure of the:

14. Insertion loss is the power delivered to the through port.

8. _________ is a key component in the scalar or vector network analyzer.

9. Reflectometer can also be used as a frequency meter.

10. A basic Reflectometer circuit can be used to measure the _____________

1. Example of a non reciprocal device:

2. A microwave network can be called non reciprocal only if it contains anisotropic

4. The magnetic properties of a material are due to the existence of ___________

1. Ferrite isolators are ____ port microwave devices.

2. The matrix of an ideal isolator is not ______

3. A very common application of isolator is to provide isolation between a low power

5. The isolators constructed using ferrite materials must operate at:

6. Forward attenuation provided by a resonance ferrite isolator is:

4. Practically, opposite circulatory in a ferrite circulator can be obtained by:

5. A circulator device can also used as an isolator with a few modifications.

6. In the scattering matrix representation of a non-ideal circulator, the diagonal elements

7. In a stripline junction circulator, the ferrite material is present in the form of a:

1. A PIN diode consists of ______number of semiconductor layers.

2. The material out of which PIN diode is made is:

5. The resistance of the PIN diode with positive bias voltage:

6. A PIN diode can be used in either a series or a shunt configuration to form a

1. Varactor diode is a semiconductor diode in which the _________ can be varied as a

3. The width of depletion region of a varactor diode ________with increase in reverse

5. Varactors made of ______ have higher frequency range of operation compared to

1. Silicon and germanium are called ___________ semiconductors.

2. GaAs is used in the fabrication of GUNN diodes because:

3. In a GaAs n-type specimen, the current generated is constant irrespective of the

6. GaAs is used in fabricating Gunn diode. Gunn diode is: