HSCH 9551 Avago

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Agilent HSCH-9551

GaAs Schottky Diode


Antiparallel Pair
Data Sheet
Features
• Low Junction Capacitance
– typically 40 fF
• Low Series Resistance
– typically 3 Ω
• Large bond pads suitable for
automated wire-bonding or
flip-chip assembly
• Polyimide scratch protection

Chip Size: 620 × 325 µm (24.4 × 12.8 mils)


Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 100 µm (4 mils)
Chip Thickness Tolerance:± 15 µm (± 0.6 mils)
Bond Pad Sizes: 100 × 200 µm (3.9 × 7.9 mils)

Description Specifications ing methods are critical factors in


• VF (1 mA): 700-800 mV successful diode performance
The HSCH-9551 is an integrated
and reliability.
antiparallel pair of GaAs Schott- • VF (10 mA): 800-850 mV
ky barrier diodes. It is a beamless Agilent application note #54,
• RS (5 mA): <6 Ω "GaAs MMIC ESD, Die Attach
version of the HSCH-9251 anti-
parallel pair beam lead diode. • CJ (per diode): <0.050 pF and Bonding Guidelines" pro-
vides basic information on these
Applications Assembly Techniques subjects.
The HSCH-9551 is a high-perfor- GaAs Schottky diodes are ESD
mance millimeter wave diode sensitive. ESD preventive mea-
that can be used as a sub-har- sures must be employed in all as-
monically pumped mixer or pects of storage, handling, and
frequency multiplier in micro- assembly.
wave and millimeter wave ESD precautions, handling con-
transceivers. siderations, die attach and bond-

This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of
circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent
Technologies sales representative.

7-17
Notes:

7-18 HMMC-XXXX/rev.X.X

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