Research Article

Cite This: ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX www.acsami.org

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices

through Site-Selective Dual Doping
Seungpil Ko,† Junhong Na,*,‡ Young-Sun Moon,† Ute Zschieschang,‡ Rachana Acharya,‡ Hagen Klauk,‡
Gyu-Tae Kim,† Marko Burghard,‡ and Klaus Kern‡,§
†
School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
‡
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
§
Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
*
S Supporting Information

ABSTRACT: Ultrathin sheets of two-dimensional (2D)

materials like transition metal dichalcogenides have attracted
strong attention as components of high-performance light-
harvesting devices. Here, we report the implementation of
Schottky junction-based photovoltaic devices through site-
selective surface doping of few-layer WSe2 in lateral contact
configuration. Specifically, whereas the drain region is covered
by a strong molecular p-type dopant (NDP-9) to achieve an
Ohmic contact, the source region is coated with an Al2O3
layer, which causes local n-type doping and correspondingly an
increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be
confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge
separation is associated with a photoresponsivity of up to 20 mA W−1 and an external quantum efficiency of up to 1.3%. The
demonstrated device concept should be easily transferrable to other van der Waals 2D materials.
KEYWORDS: tungsten diselenide, Schottky junction, photovoltaic, chemical doping, light harvesting

■ INTRODUCTION
Ultrathin sheets of two-dimensional (2D) van der Waals
flakes.16−21 More recently, photosensitive electrostatic p−n
junctions have been realized by the electrolyte-gating
materials are emerging as highly promising components of technique, where cooling can be used to freeze the ion
optoelectronic devices like photodetectors and photovoltaic distribution.22 Furthermore, lateral p−n junctions have been
devices.1,2 Especially valuable materials for this purpose are fabricated within TMDC layers through different chemical
transition metal dichalcogenides (TMDCs), which have been methods, including surface chemical doping23,24 and lateral
implemented into vertical as well as lateral device config- epitaxial growth.25,26
urations. The vertical heterostructures combine either a p-type Another principal approach to lateral TMDC-based photo-
TMDC layer (e.g., MoTe2) with an n-type TMDC layer (e.g., voltaic devices relies on the formation of a lateral Schottky
MoS2)3−6 or alternatively a TMDC layer with a semimetallic contact between a TMDC and an appropriate metal electrode.
graphene layer.7−11 Major advantages of these heterostructures It has been reported that the barrier height at the metal−
are their stable, atomically sharp interfaces; their lack of surface TMDC interface, and correspondingly the local photoresponse,
dangling bonds; and the presence of strong light−matter can be modulated by an applied gate voltage.27−30 However,
interaction, leading to strong photon absorption.11,12 Vertical thus far only little work has been devoted to controlling the
p−n heterojunctions made of WSe2/MoS2,4,13 ReSe2/MoS2,14 photoresponse at such interfaces by means of chemical doping.
MoS2/WS2,15 or WSe2/MoSe26 have revealed excellent current Here, we report the optoelectronic properties of Schottky
rectification behavior and photoelectrical properties. Likewise, junction-based photovoltaic devices wherein few-layer WSe2 is
vertical Schottky junctions within a TMDC/graphene stack oppositely doped in the vicinity of its source and drain contacts.
have been shown to exhibit notable photovoltaic perform- WSe2 is well-suited for the present purpose, as it exhibits
ance.7−11 ambipolar behavior in the transistor characteristics when
One type of lateral device configuration involves the contacted with common metal electrodes.31,32 In photovoltaic
implementation of a p−n junction into a TMDC layer by devices, an ultrathin Al2O3 layer deposited near the source
either local electrostatic or local chemical surface doping. Along
these lines, electrostatic doping by buried gates has been used Received: September 4, 2017
to create fully reconfigurable p−n junction diodes, thus Accepted: November 22, 2017
enabling the observation of the photovoltaic effect in TMDC

© XXXX American Chemical Society A DOI: 10.1021/acsami.7b13395

ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces Research Article

Figure 1. (a) Optical image (top) and schematic diagram (bottom) of a few-layer WSe2 photovoltaic device. The scale bar in the optical image is 4
μm. (b) Output characteristic of the device at Vgs = 0 V. The inset shows the same data upon decreasing the gate voltage from +80 to −80 V by steps
of −40 V. (c, d) Transfer characteristics of few-layer WSe2 devices before and after (c) Al2O3 deposition and (d) NDP-9 deposition. (e) Raman
spectra of a few-layer WSe2 sheet before and after NDP-9 deposition.

electrode serves to increase the Schottky barrier height at this NDP-9 is further supported by the upshift of the 1E2g Raman
location. At the same time, deposition of a layer of strong p- peak visible in Figure 1e, which is in agreement with the
type dopant NDP-9, which has previously been used to dope observations made on other p-type dopants and distinguished
organic semiconductors,33,34 near the drain electrode ensures from the downshift of this peak induced by n-type dopants.35,36
that this contact becomes Ohmic. In this manner, effective light Such downshift of the Raman peak was observed after Al2O3
harvesting becomes possible even under global illumination of deposition (see Figure S1), thus confirming the n-doping
the entire device, whose channel length is on the order of character in this case. Whereas the n-doping capability of Al2O3
several micrometers. for TMDCs most likely originates from positive trap charges in

■
the oxide,37−39 p-doping by the NDP-9 molecules can be
RESULTS AND DISCUSSION explained by their strong electron acceptor property, similar to
Figure 1a shows an optical image (top) of a finalized, dual- the mechanism operative in the case of organic semi-
doped few-layer WSe2 device, together with a schematic conductors.33,34
representation of the device structure (bottom). The thickness In previous studies, surface dopants have been most often
of the few-layer WSe2 sheet is about 7 nm, as determined by applied to few-layer TMDCs (with a sheet thickness of ∼10
atomic force microscopy (see Supporting Information for more nm).36,40−42 However, it is noteworthy that the resulting
details). Details of the device fabrication process are provided doping degree depends on sheet thickness. Specifically, for
in the Experimental Methods section. As apparent from Figure thicknesses above ∼10 nm, the surface dopants and the back-
1b, the output curve of the device recorded at zero gate voltage gate voltage are not able to influence the entire body of the
is nonlinear and asymmetric. This behavior is a first indication sheet because of the screening effect.43,44 By comparison,
of asymmetric source and drain contacts. Moreover, as shown although surface doping becomes fully effective in the case of
in the inset of Figure 1b, the application of a strongly negative monolayers, significant surface scattering and hence reduction
gate voltage renders the output curve almost linear. The of carrier mobility typically occur for such small thicknesses.45
mechanism underlying this gate-induced change will be Accordingly, the present few-layer WSe2 sheets can be
discussed below. considered as optimally suited for the surface doping approach.
To confirm the doping effects of the two different types of To explore the spatially resolved photocurrent response of
dopant layers, the electrical properties of few-layer WSe2 sheets the devices, scanning photocurrent microscopy (SPCM)
were compared before and after deposition of the respective measurements were performed with a confocal microscope
material onto the entire sheet. In the case of atomic layer operating at λ = 514 nm. In Figure 2, where a zero-bias
deposition (ALD) of 20 nm Al2O3, the transfer characteristic photocurrent map (acquired at Vgs = −40 V) is overlaid by an
experiences a shift toward negative gate voltages (see Figure optical reflection image of the above device, photocurrent
1c), signifying an n-doping effect. By comparison, deposition by generation is seen to occur almost exclusively near the source
thermal evaporation of 10 nm NDP-9 causes a shift of the contact. It is evident that the photocurrent (Iph = Ids,light −
transfer characteristic toward positive gate voltages (see Figure Ids,dark) has a negative sign and reaches a significant magnitude
1d), which is indicative of p-type doping. The p-doping by on the order of −0.2 μA. The highly localized photocurrent
B DOI: 10.1021/acsami.7b13395
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces Research Article

increase (reduction) of the effective Schottky barrier induced

by Al2O3 (NDP-9) as an n-type (p-type) dopant, is consistent
with the previously reported effects of other surface chemical
dopants.31,36,46−49
The influence of the drain−source voltage on the photo-
response of the device is apparent from the series of
photocurrent maps shown in Figure 3a. The maps were
recorded with three different values of the drain−source bias
voltage (Vds), specifically +100, 0, and −100 mV (in all cases
Vgs = −40 V was applied). The magnitude of the negative
photocurrent is seen to increase with increasingly negative
drain−source voltage. This trend can be understood on the
basis of the expected bias-induced changes of the band bending
Figure 2. Scanning photocurrent microscopy (SPCM) map of a dual- at the source contact, as outlined in the right panel of Figure 3a.
doped few-layer WSe2 device at room temperature. The map was
In particular, for increasingly negative drain−source bias, the
recorded at Vds = 0 V and Vgs = −40 V using a laser wavelength of 514
nm. Overlaid is the corresponding optical image of the device. The band bending associated with the Schottky barrier at the source
dotted line marks the WSe2 sheet. “D” and “S” denote the drain and electrode is expected to increase, whereas the bands at the drain
source electrodes, respectively. contact should be only little affected.
The negative photocurrent generated upon illumination of
the source contact region for Vds = +200 mV is illustrated in
strongly suggests the presence of a flat band situation (i.e., the Figure 3b as a function of gate voltage. For comparison, in
presence of an Ohmic contact) at the drain electrode, whereas a Figure 3c the same transfer is plotted in a semilogarithmic
Schottky barrier occurs at the source electrode, as indicated by manner. The negative photocurrent is observed with
the band diagrams in Figure 3a. This scenario, involving an increasingly negative gate voltage, indicative of an increasing

Figure 3. (a) Optical image of the device in Figure 2 (left) and the corresponding SPCM maps (middle) recorded at a drain−source voltage of +100,
0, and −100 mV, respectively. The scale bar is 2 μm. Band diagrams (right) for the corresponding drain−source bias conditions of the photocurrent
maps. D and S denote the drain and source electrodes, respectively. (b) Transfer characteristics of the device with the linear current scale, acquired at
Vds = +200 mV in the dark and under local illumination at the WSe2/source contact with a laser power of ∼300 μW. (c) Corresponding transfer
characteristics of the same device with a logarithmic current scale, recorded at Vds = +200 mV in the dark (gray) and under illumination (black). The
blue and red curves show the difference between the black and gray curves as positive and negative photocurrents, respectively. To display the
negative values on the logarithmic scale, the absolute values of the drain current under illumination and the negative sign of the negative
photocurrent are plotted.

C DOI: 10.1021/acsami.7b13395
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces Research Article

Figure 4. (a) Drain current vs drain voltage at Vgs = 0 V in the dark (black line) and under illumination with different laser powers of 16.9 μW (red),
37.5 μW (green), 65 μW (blue), 100 μW (cyan), 221 μW (pink), and 297 μW (orange). The device was illuminated at a WSe2−source contact. The
inset shows the corresponding output curves obtained with a gate voltage of +80 V. (b) Four band diagrams of the device at Vgs = 0 V (top) and +80
V (bottom) when Vds > 0 V or Vds ≫ 0 V. (c) Photocurrent Iph and (d) responsivity R as a function of laser power for local illumination at the
WSe2−source contact under Vds = −0.5 V and five different gate voltages of +80, +40, 0, −40, and −80 V.

built-in electric field (enhanced band bending) at the source The dependence of the photocurrent and responsivity, R =
contact. Negative photocurrent generation prevailed in the Iph/Pdev, of the device on laser power Pdev is shown in Figure
general regime, that is, Vds ≤ +100 mV and −80 ≤ Vgs ≤ +80 V. 4c,d, respectively. As apparent from Figure 4c, the photocurrent
Only for the largest positive drain−source and gate voltages, a recorded at Vds = −0.5 V and at five different gate voltages
positive photocurrent could be detected (see Figure 3c), increases close-to-linearly with increasing laser power up to
demonstrating the principal possibility of inverting the band approximately 0.1 mW. At the same time, the responsivity
bending at the source contact. recorded at the same Vds decreases with increasing laser power
Figure 4a displays the I−V characteristics of the device for all investigated gate voltages except Vgs = +80 V. The small
recorded for different laser powers (λ = 514 nm) at gate responsivity detected for Vgs = +80 V reflects a low sensitivity
voltages of Vgs = 0 V (main plot) and +80 V (inset). At Vgs = 0 (Ids,light/Ids,dark ≈ 1), which arises from the significant dark
V, increasing laser power leads to a pronounced increase of the current under this condition. In comparison, a significantly
drain−source current (negative photocurrent) for drain−source larger responsivity is found for smaller gate voltages, reaching a
voltages below approximately +300 mV. Above this drain− maximum value of 20 mA W−1 at Vgs = 0 and −40 V. It follows
source voltage, a positive photocurrent emerges, although its that through the combined effect of gate and drain−source
magnitude is quite small. At Vgs = +80 V, by contrast, a voltages the device can be tuned between two different
dominant positive photocurrent is observed above Vds = 0 mV. operation regimes, yielding photocurrents of opposite sign in
The different behaviors at the two different gate voltages can be the different drain−source bias windows.
explained by the band diagrams in Figure 4b. For Vgs = 0 V in The two different natures of the source and drain contacts on
the drain−source bias regime of 0 < Vds < +300 mV (condition the few-layer WSe2 enable one to operate the devices as light-
Vds > 0 V on the left-hand side), the downward band bending at harvesting elements. This is exemplified in Figure 5a,b, where
the source electrode and accordingly the negative photocurrent for the above device, the I−V curves before and after laser
persist. However, when Vds is increased above +300 mV illumination with a power of 297 μW are depicted for Vgs = 0
(condition Vds ≫ 0 V on the right-hand side), inversion of the and +80 V, respectively. The curves feature short-circuit current
band bending and hence positive photocurrent occurs, as (Isc) and open-circuit voltage (Voc), from which the electrical
described above. In comparison, at Vgs = +80 V, the gate- power (Pel = Ids·Vds) can be extracted. The values of the latter
induced Fermi level upshift in the few-layer WSe2 decreases are shown in the respective insets of Figure 5a,b for the
(increases) the Schottky barrier for the photogenerated hole different laser powers. For Vgs = 0 V, a maximum electrical
(electron), thereby reversing the drift directions of the hole and power of approximately 61 nW is found at Vds = +0.16 V. The
the electron. short-circuit current and open-circuit voltage as a function of
D DOI: 10.1021/acsami.7b13395
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces Research Article

Figure 5. Drain current vs drain voltage in the dark and upon illumination with a laser power of 297 μW, acquired at Vgs = 0 (a) and +80 V (b). The
insets show the drain−source voltage dependence of the electrical power derived from the short-circuit current (Isc) and open-circuit voltage (Voc) at
Vgs = 0 and +80 V, respectively. Isc (c), Voc (d), and FF and EQE (filled and open symbols in (e), respectively) as a function of laser power at five
different gate voltages of +80, +40, 0, −40, and −80 V.

laser power and gate voltage are presented in Figure 5c,d, the low FF = 0.2 of the present devices, which is most likely
respectively. In addition, the fill factor (FF = Pel/(Voc·Isc)) and due to parasitic resistances such as series and shunt resistances.
external quantum efficiency (EQE = Isc/Pdev·hc/(qλ), where h, The latter are manifested in the increasing slope at Vds = 0 V in
c, q, and λ are the Planck constant, speed of light, electronic the I−V curves of Figure 4a with increasing laser power.18,20
charge, and laser wavelength, respectively) are plotted as a They may originate from, for instance, trap-induced carrier
function of laser power in Figure 5e. In an ideal photovoltaic recombination loss or a low interface quality,18,19 and it should
cell, the short-circuit current and open-circuit voltage depend be possible to reduce them, for instance, by annealing of the
linearly and logarithmically on laser power, respectively. For the devices.
present device, with the exception of Vgs = +80 V, the short-
circuit current (open-circuit voltage) indeed depends linearly
(logarithmically) on the laser power up to 0.1 mW and then
■ CONCLUSIONS
In summary, we have exploited site-selective doping of the
approaches saturation (see Figure 5c,d, respectively). The FF is electrical contact regions on few-layer WSe2 sheets to obtain
largely independent of both, laser power and gate voltage, with photovoltaic devices featuring a photoresponsivity of 20 mA
a value of about 0.2. The maximum external quantum efficiency W−1 and the external quantum efficiency of 1.3% at low bias. By
of 1.3% is reached already at relatively low laser powers. The SPCM investigation, we could verify that the p-doping by
EQE decrease in the high-laser-power regime is explainable by NDP-9 leads to a small built-in electric field at the source
the saturation behaviors of Isc and Voc visible in Figure 5c,d. contact, whereas the n-doping by Al2O3 enhances the Schottky
Possible explanations for this decrease comprise the optical barrier at the drain contact. Thus, the realized Schottky
absorption saturation in WSe2, the screening of the built-in junction-based photovoltaic devices are suitable for operation
potential by excess carriers, or the increased electron−hole under global illumination. They reach an external quantum
recombination by the increased interactions between the efficiency that is comparable to or better than that of vertical or
carriers.5,8,50 For the power-conversion efficiency, defined as lateral p−n junctions comprising WSe2 . It should be
ηpv = Pel/Pdev, a maximum value of 0.03% was obtained. The straightforward to implement the same device configuration
maximum EQE of 1.3% is comparable to the values reported also in other 2D semiconductors.

■
for vertical heterostructure-based devices such as WSe2/black
phosphorus p−n diodes5 and about 1 order of magnitude larger EXPERIMENTAL METHODS
than that of electrostatically defined WSe2 p−n diodes.19,20 By The few-layer WSe2 sheets were mechanically exfoliated from bulk
contrast, the maximum power-conversion efficiency of only crystals by the Scotch tape method onto highly doped silicon
0.03% is well below the maximal values documented for substrates coated with a thermally grown, 300 or 90 nm thick SiO2
electrostatic WSe2 p−n diodes.18,20 This difference arises from layer. Electrical contacts were defined on a few-layer-thick WSe2 sheet

E DOI: 10.1021/acsami.7b13395
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces Research Article

by standard e-beam lithography, followed by in situ Ar plasma Type-II MoTe2/MoS2 van der Waals Heterostructures. ACS Nano
treatment, thermal evaporation of the Ti/Au (2/70 nm), and lift-off. 2016, 10, 3852−3858.
For the devices in Figure 1c,d, this was followed by deposition of (4) Sun, M.; Fang, Q.; Xie, D.; Sun, Y.; Xu, J.; Teng, C.; Dai, R.;
either a 20 nm thick Al2O3 layer by atomic layer deposition (ALD) Yang, P.; Li, Z.; Li, W.; Zhang, Y. Novel Transfer Behaviors in 2D
(Cambridge Nanotech ALD system with Al(CH3)3 and H2O as MoS2/WSe2 Heterotransistor and Its Applications in Visible-Near
precursors at 100 °C at a base pressure of 10 mTorr) or a 10 nm thick Infrared Photodetection. Adv. Electron. Mater. 2017, 3, No. 1600502.
NDP-9 layer by thermal evaporation, in both cases onto the entire (5) Chen, P.; Zhang, T. T.; Zhang, J.; Xiang, J.; Yu, H.; Wu, S.; Lu,
substrate. For the Schottky junction-based photovoltaic devices, a X.; Wang, G.; Wen, F.; Liu, Z.; Yang, R.; Shi, D.; Zhang, G. Gate
second e-beam lithography step was used to define the area to tunable WSe2-BP van der Waals heterojunction devices. Nanoscale
selectively deposit the Al2O3 layer. After deposition of the 20 nm thick 2016, 8, 3254−3258.
Al2O3 layer, lift-off was carried out in acetone, assisted by gentle (6) Flöry, N.; Jain, A.; Bharadwaj, P.; Parzefall, M.; Taniguchi, T.;
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determine the thickness of the sheets. Raman spectroscopy (λexc = 532 (7) Gao, A.; Liu, E.; Long, M.; Zhou, W.; Wang, Y.; Xia, T.; Hu, W.;
nm) was utilized to confirm that the few-layer WSe2 sheets remained
Wang, B.; Miao, F. Gate-tunable rectification inversion and photo-
intact and to evaluate the effect of Al2O3 or NDP-9 deposition on the
voltaic detection in graphene/WSe2 heterostructures. Appl. Phys. Lett.
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All electrical transport and photocurrent measurements were carried 2016, 108, No. 223501.
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performed in direct current configuration using a Keithley 2400 Highly efficient gate-tunable photocurrent generation in vertical
source-meter and a Keithley 2000 multimeter. A confocal microscope heterostructures of layered materials. Nat. Nanotechnol. 2013, 8,
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A 2016, 380, 2575−2579.
ASSOCIATED CONTENT (10) Zhang, W.; Chuu, C.-P.; Huang, J.-K.; Chen, C.-H.; Tsai, M.-L.;
Chang, Y.-H.; Liang, C.-T.; Chen, Y.-Z.; Chueh, Y.-L.; He, J.-H.; Chou,
*
S Supporting Information M.-Y.; Li, L.-J. Ultrahigh-Gain Photodetectors Based on Atomically
The Supporting Information is available free of charge on the Thin Graphene-MoS2 Heterostructures. Sci. Rep. 2014, 4, No. 3826.
ACS Publications website at DOI: 10.1021/acsami.7b13395. (11) Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.;
Raman spectra resulted from Al2O3 deposition and Mishchenko, A.; Kim, Y.-J.; Gorbachev, R. V.; Georgiou, T.; Morozov,
S. V.; Grigorenko, A. N.; Geim, A. K.; Casiraghi, C.; Neto, A. H. C.;
atomic force microscopy on the few-layer WSe2 devices
Novoselov, K. S. Strong Light-Matter Interactions in Heterostructures
(PDF) of Atomically Thin Films. Science 2013, 340, 1311−1314.

■ AUTHOR INFORMATION
Corresponding Author
(12) Pant, A.; Mutlu, Z.; Wickramaratne, D.; Cai, H.; Lake, R. K.;
Ozkan, C.; Tongay, S. Fundamentals of lateral and vertical
heterojunctions of atomically thin materials. Nanoscale 2016, 8,
3870−3887.
*E-mail: [email protected]. (13) Cheng, R.; Li, D.; Zhou, H.; Wang, C.; Yin, A.; Jiang, S.; Liu, Y.;
ORCID Chen, Y.; Huang, Y.; Duan, X. Electroluminescence and Photocurrent
Junhong Na: 0000-0002-5314-2868 Generation from Atomically Sharp WSe2/MoS2 Heterojunction p−n
Diodes. Nano Lett. 2014, 14, 5590−5597.
Notes
(14) Wang, X.; Huang, L.; Peng, Y.; Huo, N.; Wu, K.; Xia, C.; Wei,
The authors declare no competing financial interest.

■
Z.; Tongay, S.; Li, J. Enhanced rectification, transport property and
photocurrent generation of multilayer ReSe2/MoS2 p−n hetero-
ACKNOWLEDGMENTS junctions. Nano Res. 2016, 9, 507−516.
The authors are grateful to the company Novaled for supplying (15) Huo, N.; Kang, J.; Wei, Z.; Li, S.-S.; Li, J.; Wei, S.-H. Novel and
the acceptor compound NDP-9. In addition, this research was Enhanced Optoelectronic Performances of Multilayer MoS2−WS2
supported by Nano·Material Technology Development Pro- Heterostructure Transistors. Adv. Funct. Mater. 2014, 24, 7025−7031.
(16) Wang, Z.; Wang, F.; Yin, L.; Huang, Y.; Xu, K.; Wang, F.; Zhan,
gram through the National Research Foundation of Korea
X.; He, J. Electrostatically tunable lateral MoTe2 p-n junction for use in
funded by Ministry of Science and ICT (NRF- high-performance optoelectronics. Nanoscale 2016, 8, 13245−13250.
2017M3A7B4049119) and under the framework of interna- (17) Memaran, S.; Pradhan, N. R.; Lu, Z.; Rhodes, D.; Ludwig, J.;
tional cooperation program managed by the National Research Zhou, Q.; Ogunsolu, O.; Ajayan, P. M.; Smirnov, D.; Fernández-
Foundation of Korea (NRF-2016K2A9A2A14912825).

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Domínguez, A. I.; García-Vidal, F. J.; Balicas, L. Pronounced
Photovoltaic Response from Multilayered Transition-Metal Dichalco-
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G DOI: 10.1021/acsami.7b13395
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX