Q& A Electronic Devices

Green International / UPDA Electrical
Session 06 / Electronic devices / by Selvam. N.
1. Electrons in the outermost orbit or shell of an atom are called

a. free electrons
b. negative ions
c. valence electrons
d. conduction band electrons
2. A pn junction allows current flow when

a. the p-type material is more positive than the n-type material
b. the n-type material is more positive than the p-type
c. both the n-type and p-type materials have the same potential
d. there is no potential on the n-type or p-type materials
3. The arrow in the schematic symbol of a diode points to

a. the n-type material, which is called the anode
b. the n-type material, which is called the cathode
c. the p-type material, which is called the anode
d. the p-type material, which is called the cathode
4. The diode schematic arrow points to the:

a. cathode lead
b. trivalent-doped material
c. positive axial lead
d. anode lead
5. What is a varistor?
a. a voltage-dependent resistor
b. a voltage-dependent diode
c. a current-dependent resistor
d. a current-dependent diode
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6. When a diode is forward biased, the voltage across it

a. is directly proportional to the current
b. is inversely proportional to the current
c. is directly proportional to the source voltage
d. remains approximately the same
7. Why is heat produced in a diode?

a. due to current passing through the diode
b. due to voltage across the diode
c. due to the power rating of the diode
d. due to the PN junction of the diode
8. When checking a diode, low resistance readings both ways indicate the diode is:
a. Open
b. Satisfactory
c. Faulty
d. not the problem
9. In a diode schematic, the anode is represented by a(n):

a. Triangle
b. vertical line
c. zig-zag line
d. element indicator
10. What circuit activity may shift a characteristic curve so that diode operating points
are different?
a. higher power (heat)
b. higher resistance
c. lower voltage
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d. lower current
11. What is the current through the diode?
a. 0.975mA
b. 0942mA
c. 0.0mA
d. 1.0mA
12. Which type of transformer is required to create a 180 degree input to a rectifier?
a. center-tapped secondary
b. step-down secondary
c. stepped-up secondary
d. split winding primary
13. The characteristic curve for the complex model of a silicon diode shows that
a. the barrier potential is 0 V
b. the barrier potential stays fixed at 0.7 V
c. the barrier potential increases slightly with an increase in current
d. the barrier potential decreases slightly with an increase in current
14. Since diodes are destroyed by excessive current, circuits must have:
a. higher voltage sources
b. current limiting resistors
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c. more dopants
d. higher current sources
15. A diode for which you can change the reverse bias, and thus vary the capacitance
is called
a. Varactor diode
b. tunnel diode
c. Zener diode
d. switching diode
16. What is wrong with this diode?
a. Open
b. Short
c. Nothing
d. Not enough data
17. The dc current through each diode in a bridge rectifier equals:

a. the load current
b. half the dc load current
c. twice the dc load current
d. one-fourth the dc load current
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18. When matching polarity connections have been made and the potential difference
(PD) is above 0.7 V, the diode is considered to be:
a. not working
b. forward biased
c. reverse biased
d. an open switch
19. With a 12 V supply, a silicon diode, and a 370-ohm resistor in series, what voltage
will be dropped across the diode?
a. 0.3 Volts
b. 0.7 Volts
c. 0.9 Volts
d. 1.4 Volts
20. The voltage where current may start to flow in a reverse-biased pn junction is
called the
a. breakdown voltage
b. barrier potential
c. forward voltage
d. biasing voltage
21. When a diode is destroyed it has infinite impedance. When damaged by heat it
will probably:
a. Short
b. conduct more
c. conduct less
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d. Open
22. The area at the junction of p-type and n-type materials that has lost its majority
carriers is called the
a. barrier potential
b. depletion region
c. n region
d. p region
23. DC power should be connected to forward bias a diode as follows:

a. - anode, + cathode
b. - cathode, – anode
c. + anode, – cathode
d. + cathode, + anode
24. At any given time in an intrinsic piece of semiconductor material at room

temperature
a. electrons drift randomly
b. recombination occurs
c. holes are created
d. All of the above
25. The mimicking of an open/closed switch by a diode allows alternating current to

be:
a. Rectified
b. Regulated
c. Controlled
d. Attenuated
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26. Testing a good diode with an ohmmeter should indicate

a. high resistance when forward or reverse biased
b. low resistance when forward or reverse biased
c. high resistance when reverse biased and low resistance when forward biased
d. high resistance when forward biased and low resistance when reverse biased
27. In a power supply diagram, which block indicates a smooth dc output?
a. Transformer
b. Filter
c. Rectifier
d. Regulator
28. If a 169.7 V half-wave peak has an average voltage of 54 V, what is the average
of two full-wave peaks?
a. 119.9 Volts
b. 108.0 Volts
c. 115.7 Volts
d. 339.4 Volts
29. A filtered full-wave rectifier voltage has a smaller ripple than does a half-wave
rectifier voltage for the same load resistance and capacitor values because:
a. there is a shorter time between peaks
b. there is a longer time between peaks
c. the larger the ripple, the better the filtering action
d. none of the above
30. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier
equals approximately:
a. half the peak secondary voltage
b. twice the peak secondary voltage
c. the peak value of the secondary voltage
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d. four times the peak value of the secondary voltage

31. If the frequency of the applied ac signal to a Full-wave rectifier is 60 Hz, the
frequency of the pulsating dc output will be
a. 30Hz
b. 60Hz
c. 90 Hz
d. 120 Hz
32. What is the peak output voltage for this half-wave rectifier?
a. 1 Volts
b. 7.8 Volts
c. 10.9 Volts
d. 15.6 Volts
33. Shunting the ac component away from the load is the task of a:
a. Transformer
b. Regulator
c. filter
d. Rectifier
34. If the frequency of the applied ac signal to a half-wave rectifier is 60 Hz, the
frequency of the pulsating dc output will be
a. 30Hz
b. 60Hz
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c. 90 Hz
d. 120 Hz
35. With a half-wave rectified voltage across the load resistor, load current flows for
what part of a cycle?
a. 0 degrees
b. 90 degrees
c. 180 degrees
d. 360 degrees
36. Which of the following circuits would require the least amount of filtering?
a. A half-wave rectifier
b. A full-wave rectifier
c. A bridge rectifier
d. A full-wave rectifier and a bridge
37. What is the current through the LED?
a. 0 mA
b. 23 mA
c. 18 mA
d. 13 mA
38. An IC regulator receives an overload; it will:

a. shut down
b. compensate for heat
c. provide more voltage
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d. sample and adjust
39. What is the current through the Zener diode?
a. mA
b. 7.0mA
c. 8.3mA
d. 13mA
40. Thermal shutdown occurs in an IC regulator if:

a. power dissipation is too high
b. internal temperature is too high
c. current through the device is too high
d. load resistance increases
41. What is the percent of regulation if Vnl = 20 V and Vfl = 19.8 V?

a. 0%
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b. 1%
c. 1.5%
d. 5%
42. Providing a constant output regardless of ac input or load resistance changes is

the function of a:
a. Transformer
b. Filter
c. Regulator
d. Rectifier
43. What is wrong with this circuit?
a. The Zener is open

b. The Zener is shorted
c. Nothing
d. not enough data
44. In a power supply diagram, which block indicates a pulsating dc output?

a. Transformer
b. Filter
c. Rectifier
d. Regulator
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45. List three diode packages:

a. clip package, DIP, small current package
b. DIP, small current package, large current package
c. small current package, large current package, and SIP
d. small current package, large current package, clip package
46. When transistors are used in digital circuits they usually operate in the:
a. active region
b. breakdown region
c. saturation and cutoff regions
d. linear region
47. Three different Q points are shown on a dc load line. The upper Q point represents
the:
a. minimum current gain
b. intermediate current gain
c. maximum current gain
d. cutoff point
48. A transistor has a of 250 and a base current, IB of 20 micro Amp. The
collector current, IC, equals:
a. 500 micro Amp
b. 5 milli amp
c. 50 milli Amp
d. 5 Amp
49. A current ratio of IC/IE is usually less than one and is called:
a. Beta
b. Theta
c. Alpha
d. Omega
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50. With the positive probe on an NPN base, an ohmmeter reading between the other
transistor terminals should be:
a. open
b. infinite
c. low resistance
d. high resistance
51. In a C-E configuration, an emitter resistor is used for:

a. Stabilization
b. Ac signal bypass
c. Collector bias
d. Higher gain
52. To operate properly, a transistor's base-emitter junction must be forward biased
with reverse bias applied to which junction?
a. collector-emitter
b. base-collector
c. base-emitter
d. collector-base
53. The ends of a load line drawn on a family of curves determine:

a. saturation and cutoff
b. the operating point
c. the power curve
d. the amplification factor
54. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 , what is

the base bias voltage?
a. 8.7 volts
b. 4.35 volts
c. 2.9 volts
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d. 0.7 volts
55. The C-B configuration is used to provide which type of gain?

a. Voltage
b. Current
c. Resistance
d. Power
56. The Q point on a load line may be used to determine:

a. Vc
b. Vcc
c. VB
d. Ic
57. A transistor may be used as a switching device or as a:
a. fixed resistor
b. tuning device
c. rectifier
d. variable resistor
58. If an input signal ranges from 20–40 A (micro amps), with an output signal
ranging from 0.5–1.5 mA (milliamps), what is the ac beta?
a. 0.05
b. 20
c. 50
d. 500
59. Which is beta's current ratio?
a. IC/IB
b. IC/IE
c. IB/IE
d. IE/IB
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60. A collector characteristic curve is a graph showing:

a. emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base bias
voltage held constant
b. collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
c. collector current (IC) versus collector-emitter voltage (VC) with (VBB) base bias
voltage held constant
d. collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base
bias voltage held constant
61. With low-power transistor packages, the base terminal is usually the:
a. tab end
b. middle
c. right end
d. stud mount
62. When a silicon diode is forward biased, what is VBE for a C-E configuration?
a. voltage-divider bias
b. 0.4 V
c. 0.7 V
d. emitter voltage
63. What is the current gain for a common-base configuration where IE = 4.2 mA and
IC = 4.0 mA?
a. 16.80
b. 1.05
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c. 0.2
d. 0.95
64. With a PNP circuit, the most positive voltage is probably:

a. Ground
b. Vc
c. VCC
d. VBE
65. Most of the electrons in the base of an NPN transistor flow:

a. out of the base lead
b. into the collector
c. into the emitter
d. into the base supply
66. In a transistor, collector current is controlled by:

a. collector voltage
b. base current
c. collector resistance
d. all of the above
67. Total emitter current is:

a. IE – IC
b. IC + IE
c. IB + IC
d. IB – IC
68. Often a common-collector will be the last stage before the load; the main
function(s) of this stage is to:
a. provide voltage gain
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b. provide phase inversion

c. provide buffer the voltage amplifiers from the low-resistance load
d. provide impedance matching for maximum power transfer
69. For a C-C configuration to operate properly, the collector-base junction should be
reverse biased, while forward bias should be applied to which junction?
a. collector-emitter
b. collector-base
c. cathode-anode
d. base-emitter
70. The input/output relationship of the common-collector and common-base

amplifiers is:
a. 270 degrees
b. 180 degrees
c. 90 degrees
d. 0 degrees
71. If a transistor operates at the middle of the dc load line, a decrease in the current
gain will move the Q point:
a. off the load line
b. nowhere
c. up
d. Down
72. Which is the higher gain provided by a C-E configuration?

a. Voltage
b. Current
c. Resistance
d. Power
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73. What is the collector current for a C-E configuration with a beta of 100 and a base
current of30 A?
a. 30 A
b. 3 A
c. 3 mA
d. 3 micro A
74. Voltage divider bias provides

a. Unstable Q point
b. Stable Q point
c. A Q point that easily varies with change in transistor’s current gain
d. A Q point that is stable and easily varies with change in transistor’s current gain
75. During forward blocking state, the SCR has

a. Low current, medium voltage
b. Low current, large voltage
c. Medium current, large voltage
d. Large current, low voltage
76. Once SCR starts conducting a forward current, its gate loses control over
a. Anode circuit current only
b. Anode circuit voltage only
c. Anode circuit voltage and current
d. Anode circuit voltage, current and time
77. In a SCRs
a. Both Latching current and holding current are associated with turn-off process
b. Latching current is associated with turn-off process and holding current with
turn on process
c. Holding current is associated with turn-off process and Latching current with
turn-on process
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d. Both Latching current and holding current are associated with turn on process
78. The SCR can be termed as

a. DC switch
b. AC switch
c. Square-wave switch
d. Either A or B
79. In a thyristor, the magnitude of anode current will

a. Increase if gate current is increased
b. Increase if gate current is decreased
c. Decrease if gate current is decreased
d. Not change with any variation in gate current
80. Turn on time of an SCR can be reduced by using a

a. Rectangular pulse of high amplitude and narrow width
b. Rectangular pulse of low amplitude and wide width
c. Triangular pulse
d. Trapezoidal pulse
81. Turn off time of an SCR in series with RL circuit can be reduced by
Increasing circuit resistance R
Decreasing circuit resistance R
Increasing circuit inductance L
Decreasing circuit inductance L
a. B, C
b. A, D
c. B, D
d. D only
82. A forward voltage can be applied to an SCR after its

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a. Anode current reduces to zero

b. Gate recovery time
c. Reverse recovery time
d. Anode voltage reduces to zero
83. Turn-off time of an SCR is measured from the instant

a. Anode current becomes zero
b. Anode voltage becomes zero
c. Anode voltage and anode current become zero at the same time
d. Gate current becomes zero
84. In an SCR, anode current flows over a narrow region near the gate during
a. Delay time td
b. Rise time tr and spread time tp
c. td and tp
d. td and tr
85. Gate characteristic of a thyristor

a. Is straight line passing through origin
b. Is of the type Vg = a + bIg
c. Is a curve between Vg and Ig
d. Has a spread between two curves of Vg-Ig
86. Surge current rating of an SCR specified the maximum

a. Repetitive current with sine wave
b. Non-repetitive current with rectangular wave
c. Non-repetitive current with sine wave
d. Repetitive current with rectangular wave
87. The di/dt rating of an SCR is specified for its

a. Decaying anode current
b. Decaying gate current
c. Rising gate current
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d. Rising anode current
88. For an SCR, dv/dt protection is achieved through the use of

a. RL in series with SCR
b. RC across with SCR
c. L in series with SCR
d. RC in series with SCR
Also called as snubber circuit, R is mandatory for dissipating the stored energy in
the capacitor.
89. For an SCR, di/dt protection is achieved through the use of

a. R in series with SCR
b. RL in series with SCR
c. L in series with SCR
d. L across SCR
90. A cycloconverter is a
a. Frequency changer from higher to lower frequency with one-state conversion
b. Frequency changer from higher to lower frequency with two-stage conversion
c. Frequency changer from lower to higher frequency with one-stage conversion
d. Either a or c
91. SCR can be controlled
a. Once in each half cycle
b. Twice in each half cycle
c. Thrice in each half cycle
d. Four times in each half cycle
e. None of the above
92. The SCR can be turned on by

A. Applying anode voltage at a sufficiently fast rate
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B. Applying sufficiently large anode voltage

C. Increasing the temperature of SCR to a sufficiently large value
D. Applying sufficiently large gate current
a. A, B
b. C, D
c. B, C
d. A, B, C, D
e. None of the above options
93. In a SCR,
a. Gate current is directly proportional to forward break over voltage
b. As gate current is raised, forward break over voltage reduces
c. Gate current has to be kept on continuously for conduction
d. Forward break over voltage is low in the forward blocking state
94. When a SCR is in the forward blocking stte,

a. All the 3 junctions are reverse biased
b. The anode and cathode junctions are forward biased but the gate
junction is reverse biased
c. The anode junction is forward biased but the cathode and gate
junctions are reverse biased
d. The anode and gate junctions are forward biased but the cathode
junction is reverse biased
95. SCR is the solid state equivalent of
a. Transistor
b. Thyratron
c. Vacuum diode
d. Crystal diode
96. The SCR is turned off when the anode current falls below
a. Forward current rating
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b. Break over voltage

c. Holding current
d. Latching current
97. An SCR has ......PN junctions

a. Two
b. Four
c. Three
d. One
98. With gate open, a SCR can be turned-on by making supply voltage....
a. Minimum
b. Reverse
c. Equal to cathode voltage
d. Equal to break over voltage
99. If firing angle in a SCR rectifier is increased, output is....

a. Increased
b. Maximum
c. Decreased
d. Unaffected
100. The form factor for half wave rectified sine wave is
a. 1.0
b. 1.11
c. 1.44
d. 1.57
101. For full-wave rectified sine wave, rms value is

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a. 0.707 im
b. 0.6036 im
c. 0.5 im
d. 0.318 im
102. For full-wave rectified sine wave, mean value is

a. 0.70 im
b. 0.636 im
c. 0.5 im
d. 0.318 lm
103. For full-wave rectified sine wave, form factor is

a. 1.5
b. 1.41
c. 1.28
d. 1.11
104. The ripple factor of a full-wave rectifier circuit compared to that of a half
wave rectifier circuit without filter is
a. half of that for a half 'wave rectifier
b. less than half that for a half-wave rectifier circuit
c. equal to that of a half wave rectifier
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105. A silicon-controlled rectifier is a

a. Unijunction device
b. Device with three junctions
c. Device with four junctions
d. None of the above.
106. The RMS value of a half wave rectifier current is 10 A. Its value for full wave
rectification would be
a. 10 A
b. 14.14 A
c. (20/π) A
d. 20 A
107. For single phase supply frequency of 50 Hz, ripple frequency in full wave
rectifier is
a. 25
b. 50
c. 100
d. 200
108. Peak inverse voltage for a diode is the

a. voltage corresponding to rated maximum voltage
b. maximum voltage that can be applied across the diode in the
conducting direction
c. maximum voltage that can be applied across the diode in the
non- conducting direction
109. When voltage applied to a diode is more than PIV, it is likely to result in
a. More distortion on output side
b. Poor regulation
c. Conduction in both directions
d. Breakdown at the junction
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110. PIV of a diode is usually

a. Half the dc voltage
b. Same as dc voltage
c. Twice the dc output voltage
d. Hundred times the dc output voltage
111. Ripple frequency of full wave rectifier working on 50 Hz supply will be

a. 25 Hz
b. 50 Hz
c. 100 Hz
d. 150 Hz
112. The rms value of half wave-rectified sine wave is

a. 0.707 im
b. 0.66 im
c. 0.5 im
d. 0.318 im
113. Which of the following is known as metal rectifier?

a. Selenium disc rectifier
b. Copper oxide rectifier
c. Gas tube diode
d. All of the above
114. Which power should be connected to Anode/Cathode to make PN Diode

Forward Biased?
a. +7V, +10V
b. +0.3V, +5V
c. +5V, 1V
d. +10V, +7V
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115. If metal is added to a semiconductor. Which type of diode is formed?

a. Schottky diode
b. Zener Diode
c. Tunnel Diode
d. Avalanche Diode
116. Zener diode is used for

a. Rectification
b. Amplification
c. Voltage regulation
d. Noise reduction
117. The highest input impedance is obtained in

a. Bipolar NPN
b. Bipolar PNP
c. MOSFET
d. Both Bipolar and MOSFET
118. Ripple Factor of Zener Diodes depends on

a. Zener Voltage
b. Input Impedance
c. Output Impedance
d. Zener Current
119. When using Zener Diode for voltage regulation, the output wave shape will
be affected by
a. Dynamic resistance of the diode
b. Input current passing through
the diode
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c. Voltage
d. power
120. When transistors are used in digital circuits they usually operate in the:
a. active region
b. breakdown region
c. saturation and cutoff regions
d. linear region
121. Terminal representing control input of BJT

a. Emitter
b. Base
c. Collector
d. Gate
122. N-channel FETs are superior to p-channel FETs because

a. mobility of electrons is smaller than that of holes
b. mobility of electrons is greater than that of holes
c. they consume less power
d. they have high switching time
123. Figure uses 10 V Zener diode. The minimum and maximum current through
series resistance are
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a. 10 mA and 30 mA
b. 20 mA and 40 mA
c. 0 and 30 mA
d. 0 and 40 mA
Explanation:
Minimum current = = 10 mA.
Maximum current = = 30 mA
124. In a N-P-N transistor, when emitter junction is forward biased and collector
junction is reverse biased the transistor will operate in
a. active region
b. saturation region
c. cut-off region
d. inverted region
125. The minimum gate source voltage that creates the n-type inversion layer is
called
a. cut off voltage
b. on voltage
c. threshold voltage
d. Zener voltage
126. The most common method for biasing a JFET is
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a. reverse bias
b. self-bias
c. voltage divider bias
127. Typical values of current gains for CE, CB and CC amplifiers are
a. 120, 120 and 1 respectively
b. 120, 1 and 120 respectively
c. 1, 120 and 120 respectively
d. 1, 1 and 120 respectively
128. The purpose of providing groundings rings with MOSFET is to

a. avoid any stray voltage at the gate that may destroy SiO2 layer
b. protect against any descaling
c. ground all eddy currents
d. protect against any physical injury
129. Determine if diodes D1 and D2 in the given figure are forward or reverse
biased.
a. D1 forward and D2 reverse

b. D2 forward and D1 reverse
c. D1 and D2 reverse
d. D1 and D2 forward
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130. Determine the output voltage Vout for the circuit in the given figure.
a. –0.5 V
b. 0 V
c. +5 V
d. +4.3 V
131. In a 20 Vac series RC circuit, if 20 V is measured across the resistor and

40 V is measured across the capacitor, the applied voltage is:
a. 45 V
b. 50 V
c. 55 V
d. 60 V
132. What is the total capacitance?
a. 1 F
b. 12 F
c. 0.615 F
d. 8 F
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133. The Three Terminal of transistor are

a. Gate, Collector and emitter
b. Collector, Base, and Source
c. Base, Collector & emitter
d. Base, Gate & Collector
134. The Transistor means

a. Transfer-resistor
b. Trans-resistor
c. Tri-resistor
135. BJT is a _________________ device

a. Unipolar
b. Bipolar
c. Multipolar
136. In Unipolar transistor, the current conduction is due to

a. Minority carriers
b. Majority carriers
c. Both minority & majority carriers
137. In bipolar transistor, the current is due to

a. Holes
b. Electrons
c. Both Holes & electrons
138. BJT is ___________controlled device.

a. Field
b. Voltage
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c. Resistor
d. Current
139. MOSFET is ___________controlled device.
a. Field
b. Power
c. Resistor
d. Current
140. The types of bipolar junction transistor are

a. PPN, NPN
b. PNP, NPN
c. NPN, PPN
d. NNP, PPN
141. The middle region of transistor is called

a. Base
b. Collector
c. Emitter
142. The process by which impurities are added to a pure semiconductor is

a. Diffusing
b. Drift
c. Doping
d. Mixing
143. Base of the transistor is always _________ and __________ doped.

a. Thick, Lightly
b. Thin, Lightly
c. Thin, heavily
d. Thin, Moderately
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144. Emitter of the transistor is always _______ and ________ doped.

a. Thick, Lightly
b. Thin, Lightly
c. Thin, heavily
d. Moderately, heavily
145. Collector of the transistor is always ________ and _________ doped.

a. Thick, Lightly
b. Thin, Lightly
c. Thin, heavily
d. Large, Moderately
146. In a transistor the collector region is larger than the emitter region for
a. Better Heat dissipation
b. Higher value of B
c. Better amplification
147. The arrow in transistor symbol indicates the direction of

a. Conventional emitter current
b. Electron current in emitter
c. Supply current
d. a & b
148. _____________is the highest current in any bipolar transistor.

a. IB
b. IC
c. IE
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d. IG
149. The ______________ current of a transistor is neither the largest nor the
smallest.
a. Base
b. Collector
c. Emitter
150. Which of the following currents are nearly equal to each other?
a. IB & IC
b. IE & IC
c. IB & IE
d. IB, IC & IE
151. For transistor properly biased PNP transistor let IC=10mA and IE=10.2 mA.
What is the level of IB?
a. 0.2 mA
b. 200 mA
c. 200 UA
d. 20.2 mA
152. Holes flow constitutes the dominant current in a ______________

transistor.
a. NPN
b. PNP
c. NPN & PNP
153. For operating in the active region the emitter junction should be____biased
Page 35 of 39
and collector Junction should be ___________biased in BJT.

a. Forward, Forward
b. Reverse, Reverse
c. Forward, Reverse
d. Reverse, Forward
154. In CB configuration a reverse biased collector junction IC=______________
when the emitter is left open.
a. 0
b. IE
c. ICBO
155. ICBO flows from ________________ to _______________ when emitter is

open.
a. Collector, Base
b. Base, Collector
c. Collector, emitter
156. The _____________ carriers constitute current ICBO.

a. Both minority and majority
b. Minority
c. Majority
157. ICBO current is ______________

a. Greater than IC
b. Increase with temperature
c. Less than ICO
d. Flows when base junction is forward biased.
158. With rise in temp ICBO ___________

a. Increase linearly
b. Doubles of every 100 C

c. Decrease linearly
Page 36 of 39
159. The Alpha DC is always

a. unity
b. less than unity
c. greater than unity
160. The α =
a. IB/IE
b. IC/IE
c. IC/IB
d. None of the above.
161. Smaller the thickness of the base is the value of αdc

a. Smaller
b. Larger
c. Constant.
162. The α is the current gain of configuration

a. CB
b. CC
c. CE
163. In CB configuration input resistance is ____________

a. ∆VEB/∆IE
b. ∆VCB/∆IE
c. ∆VCB/∆IC
164. The input resistance of CB configuration is measured constant

a. IB
b. IC
c. Vcb
Page 37 of 39
d. Vce
165. The dynamic output resistance of transistor in CB configuration is ________

at constant IE
a. ∆VEB/∆IE
b. ∆VEB/∆IC
c. ∆VCB/∆IC
d. ∆IE/∆VEB
166. Zener diode works on the principle of
a. Tunnelling of charge carriers across the junction
b. Thermionic emission
c. Diffusion of charge carriers across the junction
d. Doping of charge carrier across the junction
167. Filter in active region

a. Filters the signal
b. Filters, amplifies and modulates
c. Filers and amplifies
d. Filers and modulates
168. Amplifier working with good gain in:

a. Reverse region
b. Cutoff region
c. Active region
d. Saturated region
169. To get rid of DC offset use?

a. Low pass filter
b. High pass filter
c. Band pass filter
d. Stop band pass filter
Page 38 of 39
170. If gain of amplifier is 10 and having negative feedback of 9%. What will be
the gain if feedback is remove?
a. 10
b. 90
c. 100
d. 1.2
Page 39 of 39

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Green International / UPDA Electrical

Session 06 / Electronic devices / by Selvam. N.

1. Electrons in the outermost orbit or shell of an atom are called

2. A pn junction allows current flow when

3. The arrow in the schematic symbol of a diode points to

4. The diode schematic arrow points to the:

6. When a diode is forward biased, the voltage across it

7. Why is heat produced in a diode?

9. In a diode schematic, the anode is represented by a(n):

11. What is the current through the diode?

16. What is wrong with this diode?

17. The dc current through each diode in a bridge rectifier equals:

23. DC power should be connected to forward bias a diode as follows:

24. At any given time in an intrinsic piece of semiconductor material at room

25. The mimicking of an open/closed switch by a diode allows alternating current to

26. Testing a good diode with an ohmmeter should indicate

d. four times the peak value of the secondary voltage

37. What is the current through the LED?

38. An IC regulator receives an overload; it will:

d. sample and adjust

39. What is the current through the Zener diode?

40. Thermal shutdown occurs in an IC regulator if:

41. What is the percent of regulation if Vnl = 20 V and Vfl = 19.8 V?

42. Providing a constant output regardless of ac input or load resistance changes is

a. The Zener is open

44. In a power supply diagram, which block indicates a pulsating dc output?

45. List three diode packages:

51. In a C-E configuration, an emitter resistor is used for:

53. The ends of a load line drawn on a family of curves determine:

54. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 , what is

55. The C-B configuration is used to provide which type of gain?

56. The Q point on a load line may be used to determine:

60. A collector characteristic curve is a graph showing:

64. With a PNP circuit, the most positive voltage is probably:

65. Most of the electrons in the base of an NPN transistor flow:

66. In a transistor, collector current is controlled by:

67. Total emitter current is:

b. provide phase inversion

70. The input/output relationship of the common-collector and common-base

72. Which is the higher gain provided by a C-E configuration?

74. Voltage divider bias provides

75. During forward blocking state, the SCR has

78. The SCR can be termed as

79. In a thyristor, the magnitude of anode current will

80. Turn on time of an SCR can be reduced by using a

82. A forward voltage can be applied to an SCR after its

a. Anode current reduces to zero

83. Turn-off time of an SCR is measured from the instant

85. Gate characteristic of a thyristor

86. Surge current rating of an SCR specified the maximum

87. The di/dt rating of an SCR is specified for its

d. Rising anode current

88. For an SCR, dv/dt protection is achieved through the use of

89. For an SCR, di/dt protection is achieved through the use of

92. The SCR can be turned on by

B. Applying sufficiently large anode voltage

94. When a SCR is in the forward blocking stte,

b. Break over voltage

97. An SCR has ......PN junctions

143. Base of the transistor is always _ and __ doped.

144. Emitter of the transistor is always _ and __ doped.

145. Collector of the transistor is always and _ doped.

155. ICBO flows from __ to _ when emitter is