DMC3350LDWQ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID Max  Low On-Resistance
Device BVDSS RDS(ON) Max
TA = +25°C  Low Input Capacitance
0.4Ω @ VGS = 10V 0.9A  Fast Switching Speed
Q1 30V  ESD Protected Gate
0.7Ω @ VGS = 4.5V 0.68A
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
0.9Ω @ VGS = -10V -0.6A  Halogen and Antimony Free. “Green” Device (Note 3)
Q2 -30V  The DMC3350LDWQ is suitable for automotive applications
1.7Ω @ VGS = -4.5V -0.43A
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Description and Applications Mechanical Data

This MOSFET is designed to minimize the on-state resistance  Package: SOT363
(RDS(ON)) yet maintain superior switching performance, making it ideal  Package Material: Molded Plastic, "Green" Molding Compound.
for high-efficiency power-management applications. UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Motor controls  Terminal Connections Indicator: See Diagram
 Power-management functions  Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
 DC-DC converters Solderable per MIL-STD-202, Method 208
 Weight: 0.027 grams (Approximate)

D1 D2 D1 G2 S2
SOT363

G1 G2

S1 G1 D2
Gate Protection Gate Protection
ESD PROTECTED Diode S1 Diode S2

Top View
Top View Q1 N-CHANNEL Q2 P-CHANNEL Pin Out

Ordering Information (Note 4)

Packing
Part Number Package
Qty. Carrier
DMC3350LDWQ-7 SOT363 3000 Tape & Reel
DMC3350LDWQ-13 SOT363 10000 Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

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Marking Information

BU3 = Product Type Marking Code

YM
BU3 YM = Date Code Marking
Y = Year (ex: L = 2024)
M = Month (ex: 9 = September)

Date Code Key

Year 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 2035
Code L M N P R S T U V W X Y

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value_Q1 Value_Q2 Unit
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS ±20 ±20 V
Continuous Drain Current (Note 5)
TA = +25C 0.9 -0.6
Q1: VGS = 10V Steady State ID A
TA = +70C 0.72 -0.48
Q2: VGS = -10V
Maximum Continuous Body Diode Forward Current (Note 5) IS 0.44 -0.44 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 3.4 -2.5 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) PD 0.35 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 353 °C/W
Total Power Dissipation (Note 5) PD 0.49 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 254 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

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Electrical Characteristics – N Channel – Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS — — 1.0 μA VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS — — ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 0.8 — 1.6 V VDS = VGS, ID = 250μA
— 0.24 0.4 VGS = 10V, ID = 0.59A
Static Drain-Source On-Resistance RDS(ON) Ω
— 0.32 0.7 VGS = 4.5V, ID = 0.2A
Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 0.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 38.4 — pF
VDS = 15V, VGS = 0V
Output Capacitance Coss — 10.5 — pF
f = 1.0MHz
Reverse Transfer Capacitance Crss — 6.4 — pF
Total Gate Charge (VGS = 4.5V) Qg — 0.5 — nC
Total Gate Charge (VGS = 10V) Qg — 1.1 — nC
VDS = 10V, ID = 250mA
Gate-Source Charge Qgs — 0.2 — nC
Gate-Drain Charge Qgd — 0.1 — nC
Turn-On Delay Time tD(ON) — 3.2 — ns
Turn-On Rise Time tR — 12 — ns VGS = 10V, VDS = 30V
Turn-Off Delay Time tD(OFF) — 82 — ns ID = 100mA, RG = 25Ω
Turn-Off Fall Time tF — 51 — ns

Electrical Characteristics – P Channel – Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -24V, VGS = 0V
Gate-Source Leakage IGSS — — ±10 μA VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) -1 — -2.6 V VDS = VGS, ID = -250μA
— 0.46 0.9 VGS = -10V, ID = -0.42A
Static Drain-Source On-Resistance RDS(ON) Ω
— 0.89 1.7 VGS = -4.5V, ID = -0.2A
Diode Forward Voltage VSD — -0.8 -1.2 V VGS = 0V, IS = -0.23A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 19 — pF
VDS = -15V, VGS = 0V
Output Capacitance Coss — 16 — pF
f = 1.0MHz
Reverse Transfer Capacitance Crss — 3 — pF
Total Gate Charge (VGS = -4.5V) Qg — 0.36 — nC
Total Gate Charge (VGS = -10V) Qg — 0.8 — nC
VDS = -10V, ID = -0.24A
Gate-Source Charge Qgs — 0.1 — nC
Gate-Drain Charge Qgd — 0.1 — nC
Turn-On Delay Time tD(ON) — 30 — ns
Turn-On Rise Time tR — 74 — ns VGS = -10V, VDD = -15V
Turn-Off Delay Time tD(OFF) — 28 — ns ID = -0.5A, RG = 1Ω
Turn-Off Fall Time tF — 31 — ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

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2.5 2.8
VGS = 10.0V VGS = -10.0V VGS = -6.0V
VGS = 6.0V VGS = -8.0V
2.0
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 3.5V 2.1

VGS = 4.5V VGS = -5.0V

1.5
VGS = 4.0V
1.4 VGS = -4.8V
VGS = 3.0V
1.0 VGS = -4.5V
VGS = 2.8V
VGS = -4.2V
0.7
0.5 VGS = 2.5V

0.0 0.0
0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic (Q1) Figure 2. Typical Output Characteristic (Q2)

2 2
VDS = 5V TJ = -55℃
VDS = -5V
TJ = 25℃
1.6 1.6 TJ = 85℃
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)

TJ = 125℃
TJ = 150℃
1.2 1.2

0.8 TJ = 150℃ 0.8

TJ = 125℃
TJ = 85℃
0.4 0.4
TJ = 25℃
TJ = -55℃
0 0
0 1 2 3 4 5 1 2 3 4 5 6 7
VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical Transfer Characteristic (Q1) Figure 4. Typical Transfer Characteristic (Q2)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.7 1.9

0.6 1.6

VGS = -4.5V
0.5 1.3

0.4 VGS = 4.5V 1

0.3 0.7
VGS = -10.0V

0.2 VGS = 10.0V 0.4

0.1 0.1
0 0.5 1 1.5 2 2.5 3 0 0.4 0.8 1.2 1.6 2
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. Typical On-Resistance vs. Drain Current and
Gate Voltage (Q1) Gate Voltage (Q2)

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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.6 2.5

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

2 ID = -420mA
1.2
ID = -200mA
1.5
ID = 590mA
0.8
ID = 200mA
1

0.4
0.5

0 0
0 4 8 12 16 20 0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 7. Typical Transfer Characteristic (Q1) Figure 8. Typical Transfer Characteristic (Q2)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.6 1.3
VGS = 10V VGS = -10V
0.5 TJ = 150℃
TJ = 125℃
1
0.4
TJ = 150℃
TJ = 85℃
0.3 0.7
TJ = 25℃ TJ = 125℃
TJ = 85℃
0.2 TJ = -55℃
0.4 TJ = 25℃
0.1
TJ = -55℃

0 0.1
0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 9. Typical On-Resistance vs. Drain Current and Figure 10. Typical On-Resistance vs. Drain Current and
Junction Temperature (Q1) Junction Temperature (Q2)

1.9 1.9
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

1.7 1.7
VGS = 10V, ID = 590mA
1.5 1.5 VGS = -10V, ID = -420mA
(NORMALIZED)
(NORMALIZED)

1.3 1.3

1.1 1.1
VGS = 4.5V, ID = 200mA
VGS = -4.5V, ID = -200mA
0.9 0.9

0.7 0.7

0.5 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 11. On-Resistance Variation with Junction Figure 12. On-Resistance Variation with Junction
Temperature (Q1) Temperature (Q2)

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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.7 1.5

0.6
1.2
VGS = -4.5V, ID = -200mA
0.5
VGS = 4.5V, ID = 200mA
0.9
0.4

0.3
0.6

0.2 VGS = 10V, ID = 590mA

VGS = -10V, ID = -420mA
0.3
0.1

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 13. On-Resistance Variation with Junction Figure 14. On-Resistance Variation with Junction
Temperature (Q1) Temperature (Q2)

1.6 2.4
VGS(TH), GATE THRESHOLD VOLTAGE (V)

VGS(TH), GATE THRESHOLD VOLTAGE (V)

1.4 2.2

ID = -1mA
1.2 ID = 1mA 2

ID = 250μA ID = -250μA
1 1.8

0.8 1.6

0.6 1.4
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 15. Gate Threshold Variation vs. Junction Figure 16. Gate Threshold Variation vs. Junction
Temperature (Q1) Temperature (Q2)

2 2
VGS = 0V VGS = 0V

1.6 1.6
IS, SOURCE CURRENT (A)
IS, SOURCE CURRENT (A)

1.2 1.2
TJ = 150℃ TJ = 150℃
TJ = 125℃ TJ = 125℃
0.8 0.8
TJ = 85℃ TJ = 85℃
TJ = 25℃ TJ = 25℃
0.4 0.4
TJ = -55℃ TJ = -55℃

0 0
0 0.3 0.6 0.9 1.2 1.5 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 17. Diode Forward Voltage vs. Current (Q1) Figure 18. Diode Forward Voltage vs. Current (Q2)

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100 100
f = 1MHz f = 1MHz

CT, JUNCTION CAPACITANCE (pF)

CT, JUNCTION CAPACITANCE (pF)

Ciss

Ciss

Coss Coss
10 10

Crss Crss

1 1
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Typical Junction Capacitance (Q1) Figure 20. Typical Junction Capacitance (Q2)

10 10

8 8
VDS = 10V, ID = 250mA

6 6
VGS (V)
VGS (V)

VDS = -10V, ID = -0.24A

4 4

2 2

0 0
0 0.5 1 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Qg (nC) Qg (nC)
Figure 21. Gate Charge (Q1) Figure 22. Gate Charge (Q2)

10 10
RDS(ON) RDS(ON)
Limited Limited
PW = 100µs PW = 100µs

1 1
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

PW = 1ms
PW = 1ms
PW = 10ms
0.1 0.1 PW = 10ms
PW = 100ms
PW = 100ms
TJ(Max) = 150℃ PW = 1s TJ(Max) = 150℃
PW = 1s
TA = 25℃ PW = 10s TA = 25℃
0.01 0.01 PW = 10s
Single Pulse DC Single Pulse
DUT on 1*MRP DUT on 1*MRP DC
Board Board
VGS = 10V VGS = -10V
0.001 0.001
0.1 1 10 100 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23. SOA, Safe Operation Area (Q1) Figure 24. SOA, Safe Operation Area (Q2)

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D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE D = 0.9
D = 0.3

0.1
D = 0.1

D = 0.05

D = 0.02
D = 0.01
0.01 D = 0.005
D = Single Pulse

RθJA (t) = r(t) * RθJA

RθJA = 352.5℃/W
Duty Cycle, D = t1/t2

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000

t1, PULSE DURATION TIME (sec)

Figure 25. Transient Thermal Resistance (Q1/Q2)

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

SOT363
Dim Min Max Typ
A1 0.00 0.10 0.05
E E1
A2 0.90 1.00 0.95
b 0.10 0.30 0.25
c 0.10 0.22 0.11
D 1.80 2.20 2.15
E 2.00 2.20 2.10
F E1 1.15 1.35 1.30
b e 0.650 BSC
F 0.40 0.45 0.425
L 0.25 0.40 0.30
D
a 0° 8° --
All Dimensions in mm

A2

c a
e L
A1

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

Value
Dimensions
(in mm)
C 0.650
G 1.300
X 0.420
Y1 G Y 0.600
Y1 2.500

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IMPORTANT NOTICE

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product
described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products.
Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting
the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring
their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-
safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques,
redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.

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whose products and services may be described in this document or on Diodes’ website) under this document.

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(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products
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the applicable laws and regulations, as well as any unintended or unauthorized application.

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
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modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
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conditions/important-notice

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2024 Diodes Incorporated. All Rights Reserved.

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