DMC3350LDWQ Diodes
DMC3350LDWQ Diodes
DMC3350LDWQ Diodes
D1 D2 D1 G2 S2
SOT363
G1 G2
S1 G1 D2
Gate Protection Gate Protection
ESD PROTECTED Diode S1 Diode S2
Top View
Top View Q1 N-CHANNEL Q2 P-CHANNEL Pin Out
Marking Information
YM
BU3 YM = Date Code Marking
Y = Year (ex: L = 2024)
M = Month (ex: 9 = September)
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2.5 2.8
VGS = 10.0V VGS = -10.0V VGS = -6.0V
VGS = 6.0V VGS = -8.0V
2.0
ID, DRAIN CURRENT (A)
0.0 0.0
0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic (Q1) Figure 2. Typical Output Characteristic (Q2)
2 2
VDS = 5V TJ = -55℃
VDS = -5V
TJ = 25℃
1.6 1.6 TJ = 85℃
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 125℃
TJ = 150℃
1.2 1.2
0.7 1.9
0.6 1.6
VGS = -4.5V
0.5 1.3
0.3 0.7
VGS = -10.0V
0.1 0.1
0 0.5 1 1.5 2 2.5 3 0 0.4 0.8 1.2 1.6 2
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. Typical On-Resistance vs. Drain Current and
Gate Voltage (Q1) Gate Voltage (Q2)
0.4
0.5
0 0
0 4 8 12 16 20 0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 7. Typical Transfer Characteristic (Q1) Figure 8. Typical Transfer Characteristic (Q2)
0.6 1.3
VGS = 10V VGS = -10V
0.5 TJ = 150℃
TJ = 125℃
1
0.4
TJ = 150℃
TJ = 85℃
0.3 0.7
TJ = 25℃ TJ = 125℃
TJ = 85℃
0.2 TJ = -55℃
0.4 TJ = 25℃
0.1
TJ = -55℃
0 0.1
0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 9. Typical On-Resistance vs. Drain Current and Figure 10. Typical On-Resistance vs. Drain Current and
Junction Temperature (Q1) Junction Temperature (Q2)
1.9 1.9
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
1.7 1.7
VGS = 10V, ID = 590mA
1.5 1.5 VGS = -10V, ID = -420mA
(NORMALIZED)
(NORMALIZED)
1.3 1.3
1.1 1.1
VGS = 4.5V, ID = 200mA
VGS = -4.5V, ID = -200mA
0.9 0.9
0.7 0.7
0.5 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 11. On-Resistance Variation with Junction Figure 12. On-Resistance Variation with Junction
Temperature (Q1) Temperature (Q2)
0.6
1.2
VGS = -4.5V, ID = -200mA
0.5
VGS = 4.5V, ID = 200mA
0.9
0.4
0.3
0.6
0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 13. On-Resistance Variation with Junction Figure 14. On-Resistance Variation with Junction
Temperature (Q1) Temperature (Q2)
1.6 2.4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ID = -1mA
1.2 ID = 1mA 2
ID = 250μA ID = -250μA
1 1.8
0.8 1.6
0.6 1.4
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 15. Gate Threshold Variation vs. Junction Figure 16. Gate Threshold Variation vs. Junction
Temperature (Q1) Temperature (Q2)
2 2
VGS = 0V VGS = 0V
1.6 1.6
IS, SOURCE CURRENT (A)
IS, SOURCE CURRENT (A)
1.2 1.2
TJ = 150℃ TJ = 150℃
TJ = 125℃ TJ = 125℃
0.8 0.8
TJ = 85℃ TJ = 85℃
TJ = 25℃ TJ = 25℃
0.4 0.4
TJ = -55℃ TJ = -55℃
0 0
0 0.3 0.6 0.9 1.2 1.5 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 17. Diode Forward Voltage vs. Current (Q1) Figure 18. Diode Forward Voltage vs. Current (Q2)
100 100
f = 1MHz f = 1MHz
Ciss
Ciss
Coss Coss
10 10
Crss Crss
1 1
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Typical Junction Capacitance (Q1) Figure 20. Typical Junction Capacitance (Q2)
10 10
8 8
VDS = 10V, ID = 250mA
6 6
VGS (V)
VGS (V)
2 2
0 0
0 0.5 1 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Qg (nC) Qg (nC)
Figure 21. Gate Charge (Q1) Figure 22. Gate Charge (Q2)
10 10
RDS(ON) RDS(ON)
Limited Limited
PW = 100µs PW = 100µs
1 1
ID, DRAIN CURRENT (A)
PW = 1ms
PW = 1ms
PW = 10ms
0.1 0.1 PW = 10ms
PW = 100ms
PW = 100ms
TJ(Max) = 150℃ PW = 1s TJ(Max) = 150℃
PW = 1s
TA = 25℃ PW = 10s TA = 25℃
0.01 0.01 PW = 10s
Single Pulse DC Single Pulse
DUT on 1*MRP DUT on 1*MRP DC
Board Board
VGS = 10V VGS = -10V
0.001 0.001
0.1 1 10 100 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23. SOA, Safe Operation Area (Q1) Figure 24. SOA, Safe Operation Area (Q2)
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE D = 0.9
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01 D = 0.005
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
SOT363
SOT363
Dim Min Max Typ
A1 0.00 0.10 0.05
E E1
A2 0.90 1.00 0.95
b 0.10 0.30 0.25
c 0.10 0.22 0.11
D 1.80 2.20 2.15
E 2.00 2.20 2.10
F E1 1.15 1.35 1.30
b e 0.650 BSC
F 0.40 0.45 0.425
L 0.25 0.40 0.30
D
a 0° 8° --
All Dimensions in mm
A2
c a
e L
A1
SOT363
Value
Dimensions
(in mm)
C 0.650
G 1.300
X 0.420
Y1 G Y 0.600
Y1 2.500
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