BSN20

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary Features and Benefits

ID  Low On-Resistance
V(BR)DSS RDS(ON)
TA = +25°C  Low Input Capacitance
1.8 @ VGS = 10V 500mA  Fast Switching Speed
50V
2.0 @ VGS = 4.5V 450mA  Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description  Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-  PPAP Capable (Note 4)
state resistance (RDS(ON)) and yet maintain superior switching
NEW PRODUCT

performance, making it ideal for high efficiency power management

Mechanical Data
applications.
 Case: SOT23
Applications  Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Backlighting  Moisture Sensitivity: Level 1 per J-STD-020
 DC-DC Converters  Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
 Power Management Functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)
Drain
SOT23
D

Gate

G S
Source

Top View Equivalent Circuit Top View

Ordering Information (Note 5)

Part Number Qualification Case Packaging
BSN20-7 Standard SOT23 3000/Tape & Reel
BSN20Q-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N20 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM

YM

N20 N20 YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

Chengdu A/T Site Shanghai A/T Site

Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

BSN20 1 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 BSN20

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current Steady TA = +25°C 500
ID mA
@ TSP = +25°C (Note 6) State TA = +100°C 300
Pulsed Drain Current @ TSP = +25°C (Notes 6 & 7) IDM 1.2 A
NEW PRODUCT

Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @TA = +25°C (Note 6) PD 600 mW
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RJA 200 C/W
Power Dissipation, @TSP = +25°C (Note 6) PD 920 mW
Thermal Resistance, @TSP = +25°C (Note 6) RJSP 136 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 50   V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current TJ = +25°C IDSS   0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS   100 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS(th) 0.4 1.0 1.5 V VDS = VGS, ID = 250µA
1.3 1.8 VGS = 10V, ID = 0.22A
Static Drain-Source On-Resistance RDS(ON)  
1.6 2.0 VGS = 4.5V, ID = 0.1A
Forward Transfer Admittance |Yfs| 40 320  mS VDS = 10V, ID = 0.1A
Diode Forward Voltage VSD  1.0 1.5 V VGS = 0V, IS = 180mA
Source (diode forward) Current IS   194 mA TSP = +25°C
Peak Source (diode forward) Current ISM   1.2 A TSP = +25°C (Notes 3 & 4)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss  21.8 40 pF
Output Capacitance Coss  5.6 15 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss  3.3 10 pF
Gate Resistance Rg  49   VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg  800  pC
VGS = 10V, VDD = 25V,
Gate-Source Charge Qgs  100  pC
ID = 250mA
Gate-Drain Charge Qgd  100  pC
Turn-On Delay Time tD(on)  2.93  ns
VDD = 30V, VGEN = 10V,
Turn-On Rise Time tr  2.99  ns
RL = 150, RGEN = 50,
Turn-Off Delay Time tD(off)  9.45  ns
ID = 0.2A
Turn-Off Fall Time tf  8.3  ns
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.

BSN20 2 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 BSN20

120 120

IDER, NORMALIZED CONTINUOUS CURRENT (%)

100 100
PD, POWER DISSIPATION (%)

80 80

60 60

40 40
NEW PRODUCT

20 20

0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TS, SOLDER POINT TEMPERATURE (°C) TS, SOLDER POINT TEMPERATURE (°C)
Fig 1. Normalized Total Power Dissipation Fig 2. Normalized Continuous Current
as a Function of Solder Point Temperature vs. Solder Point Temperature

Rds(on)
Limited

PW = DC
ID, DRAIN CURRENT (A)

PW = 10s
0.1
PW = 1s

PW = 100ms

PW = 10ms

PW = 1ms
0.01 PW = 100µs
PW = 10µs

TJ(MAX) = 150°C
TA = 25°C
Single Pulse
0.001
0.1 1 10 100
VDS, DRAIN-SOURE VOLTAGE (V)
Fig. 3 SOA, Safe Operation Area
Zth(j-sp), TRANSIENT THERMAL RESISTANCE (°C/W)

1,000

100
D = 0.5

D = 0.3

D = 0.1
10
D = 0.05

D = 0.02
Duty Cycle, D = t1/t2
D = Single Pulse
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, PULSE DURATION TIME (s)
Fig. 4 Transient Thermal Response

BSN20 3 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 BSN20

0.7 0.8

0.7 VDS = 5V
0.6

ID, DRAIN-SOURCE CURRENT (A)

ID, DRAIN-SOURCE CURRENT (A)

0.6
0.5 VGS = 10V

VGS = 4.5V 0.5

0.4
VGS = 4.0V
0.4
0.3 VGS = 3.0V

0.3
NEW PRODUCT

0.2
0.2

0.1 150 ° C
0.1 25° C

0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Drain-Source Current vs. Drain-Source Voltage Fig. 6 Transfer Characteristics

10 2.5

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

8 2.0
VGS = 10V
7 ID = 500mA

6 1.5
VGS = 4.5V
5 ID = 200mA

4 1.0

3
VGS = 4.0V
VGS = 3.5V
2 0.5

1 VGS = 4.5V VGS = 10V

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -25 0 25 50 -50
75 100 125 150
ID, DRAIN-CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current Fig. 8 Drain-Source On-Resistance vs. Junction Temperature

2.4 0.5
VGS(TH), GATE THRESHOLD VOLTAGE (V)

2.0
ID, DRAIN-SOURCE CURRENT (A)

0.4

1.6
0.3
ID = 1.0mA
1.2

0.2
0.8 ID = 250µA

150° C
0.1 85° C
0.4 125 ° C
25° C
-55 ° C
0 0
-50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 9 Gate Threshold Voltage vs. Junction Temperature Fig. 10 Transfer Characteristics

BSN20 4 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 BSN20

0.8 40
gfs, FORWARD TRANSCONDUCTANCE (s)
0.7 35

0.6 25° C 30

C, CAPACITANCE (pF)
0.5 25

0.4 150° C 20
Ciss

0.3 15
NEW PRODUCT

0.2 10
Coss
0.1 5
Crss
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 35 40
ID, DRAIN-CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Transfer Characteristic Fig. 12 Capacitance vs. Drain-Source Voltage

1.0

0.9

0.8
IS, SOURCE CURRENT (A)

0.7

0.6

0.5 150° C

0.4 25° C

0.3

0.2

0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 13 Source Current vs. Diode Forward Voltage

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
l
l
7
°
H

G
A
U
G0
E.
P2
L
A
N
E

SOT23
5

Dim Min Max Typ

J
K
K
1

A 0.37 0.51 0.40

B 1.20 1.40 1.30
a

C 2.30 2.50 2.40

M
A

D 0.89 1.03 0.915

L

L
1

F 0.45 0.60 0.535

G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
C

K 0.890 1.00 0.975

K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
D

 8°
G
F

All Dimensions in mm

BSN20 5 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 BSN20

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

Y
Dimensions Value (in mm)
Z 2.9
Z X 0.8
C
Y 0.9
C 2.0
E 1.35
NEW PRODUCT

X E

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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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final and determinative format released by Diodes Incorporated.

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Copyright © 2013, Diodes Incorporated

www.diodes.com

BSN20 6 of 6 September 2013

Document number: DS31898 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
www.s-manuals.com