Green DMNH45M7SCT

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features

ID  Rated to +175°C – Ideal for High Ambient Temperature
BVDSS RDS(ON)
TC = +25°C Environments
40V 4.0mΩ @ VGS = 10V 220A  Low Input Capacitance
 Low Input/Output Leakage
Description  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
This new generation Enhancement Mode MOSFET is designed to
minimize RDS(ON) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications. Mechanical Data
 Case: TO220AB (Generic)
Applications  Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
 Motor Control
 Backlighting  Terminals: Matte Tin Finish Annealed over Copper Leadframe.
 DC-DC Converters Solderable per MIL-STD-202, Method 208
 Power Management Functions  Terminal Connections: See Diagram Below
 Weight: 1.85 grams (Approximate)

TO220AB (Generic)

S
Top View
Top View Bottom View Equivalent Circuit Pin Out Configuration

Ordering Information (Note 4)

Part Number Case Packaging
DMNH45M7SCT TO220AB (Generic) 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

= Manufacturer’s Marking
45M7SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
45M7SCT WW = Week (01 to 53)

YYWW

DMNH45M7SCT 1 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMNH45M7SCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
Steady TC = +25°C 220
Continuous Drain Current VGS = 10V ID A
State TC = +100°C 155
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 200 A
Maximum Continuous Body Diode Forward Current (Note 5) IS 2.9 A
Avalanche Current (Note 6) L=0.1mH IAS 43 A
Avalanche Energy (Note 6) L=0.1mH EAS 92 mJ

Thermal Characteristics
Characteristic Symbol Value Unit
TC = +25°C 240
Power Dissipation PD W
TC = +70°C 96
Thermal Resistance, Junction to Case RθJC 0.52 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA VGS = 16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) — 3.4 6.0 m VGS = 10V, ID = 20A
Diode Forward Voltage VSD — — 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 4043 —
VDS = 20V, VGS = 0V
Output Capacitance Coss — 694 — pF
f = 1.0MHz
Reverse Transfer Capacitance Crss — 272 —
Gate Resistance Rg — 1.83 —  VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Qg — 64.7 —
Total Gate Charge (VGS = 4.5V) Qg — 31.6 —
nC VDD = 20V, ID = 20A
Gate-Source Charge Qgs — 7.7 —
Gate-Drain Charge Qgd — 13.1 —
Turn-On Delay Time tD(ON) — 5.8 —
Turn-On Rise Time tR — 11.7 — VDD = 20V, VGS = 10V,
ns
Turn-Off Delay Time tD(OFF) — 28.9 — Rg = 1, ID = 20A
Turn-Off Fall Time tF — 6.6 —
Reverse Recovery Time tRR — 28.4 — ns
IF = 15A, di/dt = 100A/µs
Reverse Recovery Charge QRR — 21.4 — nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

DMNH45M7SCT 2 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMNH45M7SCT

30.0 30
VGS = 2.8V VDS = 5.0V
25.0 VGS = 3.0V 25
VGS=4.5V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

20.0 VGS = 10.0V 20

15.0 15

125℃
10.0 VGS = 2.5V 10 150℃
85℃
175℃
5.0 5 25℃
VGS = 2.2V
-55℃
0.0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic

0.0038 0.03
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.0038
0.025
0.0037
0.02
0.0037
()

0.0036 0.015
()

VGS = 10V
0.0036
0.01
0.0035 ID = 20A
0.005
0.0035

0.0034 0
0 5 10 15 20 25 30 0 4 8 12 16 20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Figure 4. Typical Transfer Characteristic
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.009 2.4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS = 10V
2.2
175℃ 150℃
2
0.007
1.8
(NORMALIZED)

125℃ 1.6
()

0.005 1.4
85℃
1.2
1
0.003 25℃
0.8
VGS = 10V, ID = 20A
-55℃ 0.6
0.001 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175

ID, DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE (℃)

Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature
Temperature

DMNH45M7SCT 3 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMNH45M7SCT
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
0.01 2.2

VGS(TH), GATE THRESHOLD VOLTAGE (V)

2
0.008 1.8
ID = 1mA
1.6

0.006 1.4
ID = 250μA
()

1.2

0.004 1
0.8

0.002 VGS = 10V, ID = 20A 0.6

0.4

0 0.2
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature Figure 8.Gate Threshold Variation vs. Junction
Temperature
30
10000

VGS = 0V f=1MHz
Ciss
CT, JUNCTION CAPACITANCE (pF)
25
IS, SOURCE CURRENT (A)

20

15 1000 Coss
TA = 85oC
10 TA = 125oC
TA = 150oC
TA = 25oC
5 TA = 175oC
Crss
TA = -55oC
0 100
0 0.3 0.6 0.9 1.2 0 10 20 30 40
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance

10 1000
RDS(ON) Limited PW =1µs

8
ID, DRAIN CURRENT (A)

100

6 PW =10ms
VGS (V)

PW =100ms
10
PW =1ms
4 VDS = 20V, ID = 20A
PW =10ms

1 PW =100ms
TJ(Max) = 175℃ TC = 25℃
2
Single Pulse DC
DUT on Infinite Heatsink
VGS= 10V
0 0.1
0 10 20 30 40 50 60 70 80 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area

DMNH45M7SCT 4 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMNH45M7SCT

1
D=0.7
r(t), TRANSIENT THERMAL RESISTANCE D=0.5
D=0.3
D=0.9
0.1
D=0.1

D=0.05

D=0.02
0.01 D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
D=Single Pulse RθJA = 0.52℃/W
Duty Cycle, D = t1 / t2

0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO220AB (Generic)

E A
E/2 A1

Q Ø P
H1 TO220AB (Generic)
D2 Dim Min Max Typ
D A 3.56 4.82 -
E1 A1 0.51 1.39 -
D1 L2 A2 2.04 2.92 -
b 0.39 1.01 0.81
b2 1.15 1.77 1.24
L1 c 0.356 0.61 -
A2 D 14.22 16.51 -
b2 D1 8.39 9.01 -
L D2 11.45 12.87 -
e - - 2.54
e1 - - 5.08
E 9.66 10.66 -
b c E1 6.86 8.89 -
e e1
H1 5.85 6.85 -
L 12.70 14.73 -
L1 - 4.42 -
L2 15.80 17.51 16.00
P 3.54 4.08 -
Q 2.54 3.42 -
All Dimensions in mm

Option A Option B Option A Option B

(Top View) (Top View) (Bottom View) (Bottom View)

DMNH45M7SCT 5 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMNH45M7SCT

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Copyright © 2018, Diodes Incorporated

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DMNH45M7SCT 6 of 6 August 2018

Document number: DS39969 Rev. 4 - 2 www.diodes.com © Diodes Incorporated