DGTD120T25S1PT

1200V FIELD STOP IGBT IN TO-247

Description Features
The DGTD120T25S1PT is produced using advanced Field Stop  High Speed Switching & Low VCE(sat) Loss
Trench IGBT Technology, which provides low VCE(sat) , excellent  VCE(sat) = 2.0V @ IC = 25A
quality and high-switching performance.  High Input Impedance
 trr = 100ns (typ) @ diF/dt = 500A/µs
 Ultra-Soft, Fast Recovery Anti-parallel Diode
 Ultra Narrowed VF Distribution Control
 Positive Temperature Coefficient For Easy Parallelling
 Maximum Junction Temperature 175°C
 Lead-Free Finish & RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)

Applications Mechanical Data

 Motor Drive  Case: TO-247 (Type MC)
 UPS  Case Material: Molded Plastic. “Green” Molding Compound.
 Welder  UL Flammability Classification Rating 94V-0
 Solar Inverter  Terminals: Finish – Matte Tin Plated Leads.
 IH Cooker Solderable per MIL-STD-202, Method 208
 Weight: 5.6 grams (Approximate)

Collector

Gate

G
C
E Emitter
TO-247 Device Symbol

Ordering Information (Note 4)

Product Marking Quantity
DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. 30 Devices per Tube.

Marking Information

= Manufacturer’s Marking
Typical Configuration
DGTD120T25S1 = Product Type Marking Code
YY = Year (ex: 18 = 2018)
LLLLL = Lot Code
WW = Week (01 to 53)
DGTD
120T25S1
YYLLLLLWW

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 1,200 V
TC = 25°C 50 A
DC Collector Current, limited by Tvjmax IC
TC = 100°C 25 A
Pulsed Collector Current, tp limited by Tvjmax ICpuls 100 A
Turn Off Safe Operating Area VCE ≤ 1200V, Tvj = 175°C - 100 A
TC = 25°C 25 A
Diode Forward Current limited by Tvjmax IF
TC = 100°C 12.5 A
Diode Pulsed Current, tp limited by Tvjmax IFpuls 100 A
Gate-Emitter Voltage VGE ±20 V
Short Circuit Withstand Time
VCC ≤ 600V, VGE = 15V, Tvj = 175°C
tsc 10 µs
Allowed Number of Short Circuits < 1000
Time Between Short Circuits ≥ 1.0s

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
TC = 25°C 348
Power Dissipation Linear Derating Factor (Note 6) PD W
TC = 100°C 174
Thermal Resistance, Junction to Ambient (Note 6) RθJA 40
Thermal Resistance, Junction to Case for IBGT (Note 6) RθJC 0.43 °C/W
Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 1.55
Operating Temperature Tvj -40 to +175
°C
Storage Temperature Range TSTG -55 to +150
Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board.

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Electrical Characteristics (@Tvj = +25°C, unless otherwise specified.)

Parameter Symbol Min Typ Max Unit Condition

STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1200 – – V IC = 500µA, VGE = 0V
Tvj = 25°C – 2.00 2.40
Collector-Emitter Saturation Voltage Tvj = 150°C VCE(sat) – 2.40 – V IC = 25A, VGE = 15V
Tvj = 175°C – 2.50 –
Tvj = 25°C – 2.10 2.60
Diode Forward Voltage VF V VGE = 0V, IF = 12.5A
Tvj = 175°C – 1.90 –
Tvj = 25°C – 2.50 3.00
Diode Forward Voltage Tvj = 150°C VF – 2.55 – V VGE = 0V, IF = 25A
Tvj = 175°C – 2.45 –
Gate-Emitter Threshold Voltage VGE(th) 5.0 6.0 7.0 V VCE = VGE, IC = 0.85mA
Tvj = 25°C – – 250
Zero Gate Voltage Collector Current ICES µA
Tvj = 175°C – – 2500 VCE = 1200V, VGE = 0V
Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V
Transconductance gfs – 16 – S VCE = 20V, IC = 25A
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 204 –
VCE = 960V, IC = 25A,
Gate-Emitter Charge Qge – 34 – nC
VGE = 15V
Gate-Collector Charge Qgc – 94 –
Input Capacitance Cies – 3942 –
VCE = 25V, VGE = 0V,
Reverse Transfer Capacitance Cres – 72 – pF
f = 1MHz
Output Capacitance Coes – 142 –
Internal Emitter Inductance Measured 5mm (0.197”)
LE – 13 – nH –
From Case
Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 600V,
IC(SC) – 121 – A
Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 10µs, Tvj = 175°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 73 –
Rise time tr – 41 –
ns VGE = 15V, VCC = 600V,
Turn-off Delay Time td(off) – 269 –
IC = 25A, RG = 23Ω,
Fall Time tf – 39 –
Inductive Load,
Turn-on Switching Energy Eon – 1.44 –
Tvj = 25°C
Turn-off Switching Energy Eoff – 0.55 – mJ
Total Switching Energy Ets – 1.99 –
Reverse Recovery Time trr – 100 – ns
IF = 25A, diF/dt = 500A/µs,
Reverse Recovery Current Irr – 17 – A
VR = 600V,
Reverse Recovery Charge Qrr – 0.85 – µC
Tvj = 25°C
Rate Of Fall Of Reverse Current During tb dirr/dt – -376 – A/µs
Turn-on Delay Time td(on) – 65 –
Rise time tr – 45 –
ns VGE = 15V, VCC = 600V,
Turn-off Delay Time td(off) – 292 –
IC = 25A, RG = 23Ω,
Fall Time tf – 75 –
Inductive Load,
Turn-on Switching Energy Eon – 2.43 –
Tvj = 175°C
Turn-off Switching Energy Eoff – 1.09 – mJ
Total Switching Energy Ets – 3.52 –
Reverse Recovery Time trr – 150 – ns
IF = 25A, diF/dt = 500A/µs,
Reverse Recovery Current Irr – 25 – A
VR = 600V,
Reverse Recovery Charge Qrr – 1.85 – µC
Tvj = 175°C
Rate Of Fall Of Reverse Current During tb dirr/dt – -374 – A/µs

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Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.)

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Typical Performance Characteristics (continued)

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Typical Performance Characteristics (cont.)

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Typical Performance Characteristics (cont.)

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Typical Performance Characteristics (cont.)

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO-247 (Type MC)

E A TO-247 (Type MC)

A1
ØP

Dim Min Max Typ

A 4.700 5.310 -
Q
A1 1.500 2.490 -
D1
A2 2.200 2.600 -
D2 b 0.990 1.400 -
D
b1 2.590 3.430 -
b2 1.650 2.390 -
c 0.380 0.890 -
D 20.30 21.46 -
D1 4.320 5.490 -
L1 D2 13.08 - -
A2 E 15.45 16.26 -
b1 E1 13.06 14.02 -
L E1
e 5.450
b2 e1 10.90
L 19.81 20.57 -
L1 - 4.500 -
c
b Q 5.380 6.200 -
e øP 3.500 3.700 -
e1 All Dimensions in mm

Note : For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance
distances between device Terminals and PCB tracking.

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DGTD120T25S1PT 10 of 10 March 2018

Document Number DS39659 Rev. 1 - 2 www.diodes.com © Diodes Incorporated