TC4420

TC4429

6A HIGH-SPEED MOSFET DRIVERS

FEATURES GENERAL DESCRIPTION

■ Latch-Up Protected ............ Will Withstand >1.5A The TC4420/4429 are 6A (peak), single output MOSFET
Reverse Output Current drivers. The TC4429 is an inverting driver (pin-compatible
■ Logic Input Will Withstand Negative Swing Up with the TC429), while the TC4420 is a non-inverting driver.
to 5V These drivers are fabricated in CMOS for lower power, more
■ ESD Protected ..................................................... 4kV efficient operation versus bipolar drivers.
■ Matched Rise and Fall Times ...................... 25nsec Both devices have TTL-compatible inputs, which can be
■ High Peak Output Current ......................... 6A Peak driven as high as VDD + 0.3V or as low as – 5V without upset
■ Wide Operating Range .......................... 4.5V to 18V or damage to the device. This eliminates the need for
■ High Capacitive Load Drive ...................... 10,000pF external level shifting circuitry and its associated cost and
■ Short Delay Time ................................. 55nsec Typ. size. The output swing is rail-to-rail ensuring better drive
■ Logic High Input, Any Voltage ............. 2.4V to VDD voltage margin, especially during power up/power down
■ Low Supply Current With Logic "1" Input ... 450µA sequencing. Propagational delay time is only 55nsec (typ.)
■ Low Output Impedance .................................... 2.5Ω and the output rise and fall times are only 25nsec (typ.) into
■ Output Voltage Swing to Within 25mV of Ground 2500pF across the usable power supply range.
or VDD Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo-
APPLICATIONS nents saving PCB area, parts and improving overall system
reliability.
■ Switch-Mode Power Supplies
■ Motor Controls
ORDERING INFORMATION
■ Pulse Transformer Driver
■ Class D Switching Amplifiers Temperature
Part No. Logic Package Range
PIN CONFIGURATIONS TC4420CAT Noninverting 5-Pin TO-220 0°C to +70°C
TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C
TO-220-5 8-Pin DIP 8-Pin SOIC
TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C
VDD 1 8 VDD VDD 1 8 VDD

INPUT 2 7 OUTPUT INPUT 2 7 OUTPUT

TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C
TC4420 NC 3 TC4420 6 OUTPUT NC 3 TC4420 6 OUTPUT TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C
TC4429 TC4429 TC4429
Tab is
GND 4 5 GND GND 4 5 GND TC4420IJA Noninverting 8-Pin CerDIP –25°C to +85°C
Connected
to VDD TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C
NOTE: Duplicate pins must both be connected for proper operation.
INPUT
GND
VDD
GND
OUTPUT

TC4429CAT Inverting 5-Pin TO-220 0°C to +70°C

TC4429COA Inverting 8-Pin SOIC 0°C to +70°C
TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C
FUNCTIONAL BLOCK DIAGRAM
TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C
VDD
TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C
500 µA TC4429 TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C
TC4429MJA Inverting 8-Pin CerDIP – 55°C to +125°C
300 mV
OUTPUT

INPUT
4.7V TC4420

GND
EFFECTIVE
INPUT
C = 38 pF

© 2001 Microchip Technology Inc. DS21419A TC4420/9-6 10/18/96

 6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

ABSOLUTE MAXIMUM RATINGS* Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature (Chip) .............................. +150°C
Supply Voltage ......................................................... +20V Operating Temperature Range (Ambient)
Input Voltage ............................................... – 5V to > VDD C Version ............................................... 0°C to +70°C
Input Current (VIN > VDD) .........................................50mA I Version ........................................... – 25°C to +85°C
Power Dissipation, (TA ≤ 70°C) E Version .......................................... – 40°C to +85°C
PDIP ............................................................... 730mW M Version ....................................... – 55°C to +125°C
SOIC ............................................................... 470mW Lead Temperature (Soldering, 10 sec) ................. +300°C
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W *Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields.
Package Power Dissipation, TC ≤ 25°C Stresses above those listed under "Absolute Maximum Ratings" may
5-Pin TO-220 (With Heat Sink) ......................... 12.5W cause permanent damage to the device. These are stress ratings only
Derating Factors (To Ambient) and functional operation of the device at these or any other conditions
PDIP ............................................................. 8mW/°C above those indicated in the operation sections of the specifications is
SOIC ............................................................. 4mW/°C not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ...................................................... 10°C/W

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.4 1.8 — V
VIL Logic 0 Low Input Voltage — 1.3 0.8 V
VIN (Max) Input Voltage Range –5 — VDD +0.3 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
RO Output Resistance, High IOUT = 10 mA, VDD = 18V — 2.1 2.8 Ω
RO Output Resistance, Low IOUT = 10 mA, VDD = 18V — 1.5 2.5 Ω
IPK Peak Output Current VDD = 18V (See Figure 5) — 6 — A
IREV Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A
Withstand Reverse Current t ≤ 300µsec
Switching Time (Note 1)
tR Rise Time Figure 1, CL = 2500pF — 25 35 nsec
tF Fall Time Figure 1, CL = 2500pF — 25 35 nsec
tD1 Delay Time Figure 1 — 55 75 nsec
tD2 Delay Time Figure 1 — 55 75 nsec
Power Supply
IS Power Supply Current VIN = 3V — 0.45 1.5 mA
VIN = 0V — 55 150 µA
VDD Operating Input Voltage 4.5 — 18 V

TC4420/9-6 10/18/96 2 © 2001 Microchip Technology Inc. DS21419A

6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit

Input
VIH Logic 1 High Input Voltage 2.4 — — V
VIL Logic 0 Low Input Voltage — — 0.8 V
VIN (Max) Input Voltage Range –5 — VDD + 0.3 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
RO Output Resistance, High IOUT = 10mA, VDD = 18V — 3 5 Ω
RO Output Resistance, Low IOUT = 10mA, VDD = 18V — 2.3 5 Ω
Switching Time (Note 1)
tR Rise Time Figure 1, CL = 2500pF — 32 60 nsec
tF Fall Time Figure 1, CL = 2500pF — 34 60 nsec
tD1 Delay Time Figure 1 — 50 100 nsec
tD2 Delay Time Figure 1 — 65 100 nsec
Power Supply
IS Power Supply Current VIN = 3V — 0.45 3 mA
VIN = 0V — 60 400 µA
VDD Operating Input Voltage 4.5 — 18 V
NOTE: 1. Switching times guaranteed by design.

VDD = 18V

1µF

+5V
1 8 90%
INPUT
0.1µF 0.1µF 10%
0V tD1 tF tD2
tR
2 6 +18V
INPUT OUTPUT 90% 90%
7 OUTPUT
CL = 2500pF 10% 10%
TC4429 0V
INPUT: 100 kHz, square wave,
4 5
tRISE = tFALL ≤ 10nsec.

Figure 1. Switching Time Test Circuit

© 2001 Microchip Technology Inc. DS21419A TC4420/9-6 10/18/96

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 6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

TYPICAL CHARACTERISTICS

Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage Rise and Fall Times vs. Temperature
120 100 50
C L = 2200 pF
VDD = 18V
100
80 40
C L = 10,000 pF
80 C L = 10,000 pF
TIME (nsec)

TIME (nsec)

TIME (nsec)
60 30
tFALL
60
tRISE
C L = 4700 pF 40 C L = 4700 pF 20
40
C L = 2200 pF C L = 2200 pF
20 10
20

0 0 0
5 7 9 11 13 15 5 7 9 11 13 15 –60 –20 20 60 100 140
VDD (V) VDD (V) TA (°C)

Propagation Delay Time

Rise Time vs. Capacitive Load Fall Time vs. Capacitive Load vs. Supply Voltage
100 100 65
80 80
60
60 60
DELAY TIME (nsec)

55
TIME (nsec)

VDD = 5V
TIME (nsec)

40 40
VDD = 5V tD2
50
VDD = 12V VDD = 12V
VDD = 18V
VDD = 18V 45
20 20 tD1

40

10 10 35
1000 10,000 1000 10,000 4 6 8 10 12 14 16 18
CAPACITIVE LOAD (pF) CAPACITIVE LOAD (pF) SUPPLY VOLTAGE (V)

Propagation Delay Time

vs. Temperature Supply Current vs. Capacitive Load Supply Current vs. Frequency
50 84 1000
C L = 2200 pF VDD = 15V CL= 2200 pF
VDD = 18V 18V
70
SUPPLY CURRENT (mA)

40
SUPPLY CURRENT (mA)

tD2
DELAY TIME (nsec)

10V
56 100
30 5V
tD1
42
20 500 kHz
28 10
200 kHz
10
14
20 kHz
0 0 0
–60 –20 20 60 100 140 0 100 1000 10,000 0 100 1000 10,000
TA (°C) CAPACITIVE LOAD (pF) FREQUENCY (kHz)

TC4420/9-6 10/18/96 4 © 2001 Microchip Technology Inc. DS21419A

6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

TYPICAL CHARACTERISTICS (Cont.)

High-State Output Resistance Low-State Output Resistance

5 2.5

100 mA
4 2

ROUT (Ω )
50 mA 100 mA
ROUT (Ω )

10 mA
50 mA

3 1.5
10 mA

2 1
5 7 9 11 13 15 5 7 9 11 13 15
VDD (V) VDD (V)

Effect of Input Amplitude

on Propagation Delay Total nA•S Crossover*
200 4
LOAD = 2200 pF
-9
Crossover Area (A•S) x 10

160
DELAY TIME (nsec)

120 INPUT 2.4V

2
INPUT 3V
80
INPUT 5V
1
40 INPUT 8V AND 10V

0 0
5 6 7 8 9 10 11 12 13 14 15 5 6 7 8 9 10 11 12 13 14 15
VDD (V) SUPPLY VOLTAGE (V)

* The values on this graph represent

the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.

© 2001 Microchip Technology Inc. DS21419A TC4420/9-6 10/18/96

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 6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

PACKAGE DIMENSIONS

8-Pin Plastic DIP PIN 1

.260 (6.60)
.240 (6.10)

.045 (1.14) .070 (1.78)

.030 (0.76) .040 (1.02) .310 (7.87)
.400 (10.16) .290 (7.37)
.348 (8.84)

.200 (5.08)
.140 (3.56) .040 (1.02)
.020 (0.51) .015 (0.38) 3° MIN.
.150 (3.81) .008 (0.20)
.115 (2.92)

.400 (10.16)
.310 (7.87)
.110 (2.79) .022 (0.56)
.090 (2.29) .015 (0.38)

.110 (2.79)
.090 (2.29)
8-Pin CerDIP PIN 1

.300 (7.62)
.230 (5.84)

.055 (1.40) MAX. .020 (0.51) MIN.

.400 (10.16) .320 (8.13)

.370 (9.40) .290 (7.37)
.040 (1.02)
.200 (5.08) .020 (0.51)
.160 (4.06)

.015 (0.38) 3° MIN.

.200 (5.08) .150 (3.81)
MIN. .008 (0.20)
.125 (3.18)

.400 (10.16)
.320 (8.13)
.065 (1.65) .020 (0.51)
.045 (1.14) .016 (0.41)

Dimensions: inches (mm)

TC4420/9-6 10/18/96 6 © 2001 Microchip Technology Inc. DS21419A

6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

PACKAGE DIMENSIONS (Cont.)

8-Pin SOIC

.157 (3.99) .244 (6.20)

.150 (3.81) .228 (5.79)

.050 (1.27) TYP.

.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35) .010 (0.25)
8° MAX.
.007 (0.18)
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10) .050 (1.27)
.016 (0.40)

.165 (4.19)
5-Pin TO-220 .415 (10.54)
.117 (2.97) .390 (9.91) .055 (1.40)
.103 (2.62) .156 (3.96) .045 (1.14)
.140 (3.56)
DIA.
.293 (7.44)
.204 (5.18)

.613 (15.57) 3° - 7.5°

.569 (14.45) 5 PLCS.

.037 (0.95)
.590 (14.99) .025 (0.64)
.482 (12.24)
.025 (0.64)
.012 (0.30)

PIN 1 .072 (1.83)

.062 (1.57)
.115 (2.92)
.273 (6.93) .087 (2.21) Dimensions: inches (mm)
.263 (6.68)

© 2001 Microchip Technology Inc. DS21419A TC4420/9-6 10/18/96

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 6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

WORLDWIDE SALES AND SERVICE

AMERICAS New York ASIA/PACIFIC (continued)
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Tel: 480-792-7200 Fax: 480-792-7277 San Jose #07-02 Prime Centre
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01/09/01
All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by
updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual
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TC4420/9-6 10/18/96 8 © 2001 Microchip Technology Inc. DS21419A