08P06P InfineonTechnologies
08P06P InfineonTechnologies
08P06P InfineonTechnologies
SIPMOS Power-Transistor
Features Product Summary
· P-Channel Drain source voltage VDS -60 V
· Enhancement mode Drain-source on-state resistance RDS(on) 0.3 W
· Avalanche rated
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Continuous drain current ID -8.8 A
· dv/dt rated
· 175°C operating temperature
Page 1 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal
www.DataSheet4U.com resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area 1) - - 50
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Dynamic Characteristics
Transconductance gfs 1.5 3.6 - S
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VDS³2*I D*RDS(on)max , ID = -6.2 A
Input capacitance Ciss - 335 420 pF
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance Coss - 105 135
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance Crss - 65 95
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time td(on) - 16 24 ns
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time tr - 46 69
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time td(off) - 48 72
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time tf - 14 21
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Page 3 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Dynamic Characteristics
Gate to source charge Qgs - 1.4 2.1 nC
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VDD = -48 , ID = -8.8 A
Gate to drain charge Qgd - 4 6
VDD = -48 V, ID = -8.8 A
Gate charge total Qg - 10 15
VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V
Gate plateau voltage V(plateau) - -3.85 - V
VDD = -48 , I D = -8.8 A
Page 4 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Power dissipation Drain current
Ptot = f (TC) ID = f (TC )
parameter: VGS ³ 10 V
SPD08P06P SPD08P06P
50 -10
W A
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40 -8
35 -7
Ptot
ID
30 -6
25 -5
20 -4
15 -3
10 -2
5 -1
0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC
K/W
tp = 12.0µs
A
10 0
Z thJC
-10 1
100 µs
ID
10 -1
D
/I
DS
V
D = 0.50
=
1 ms -2
)
0.20
on
10
(
DS
R
0 0.10
-10 10 ms
0.05
DC single pulse
0.02
10 -3
0.01
-10 -1 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
-10 -10 -10 V -10 10 10 10 10 10 10 s 10
VDS tp
Page 5 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Typ. output characteristic Typ. drain-source-on-resistance
I D = f (VDS); T j=25°C RDS(on) = f (ID )
parameter: tp = 80 µs parameter: VGS
SPD08P06P SPD08P06P
-21 Ptot = 42.00W 1.0
A W a b c d e f g h
j i VGS [V]
-18
a -4.0
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b -4.5
0.8
-16 h c -5.0
RDS(on)
d -5.5 0.7
-14
g e -6.0
ID
f -6.5 0.6
-12
f g -7.0
h -7.5 0.5
-10
i -8.0
e
j -10.0 0.4
-8
d
-6 0.3
c
-4 0.2
b VGS [V] =
-2 0.1 a b c d e f g h i j i
a j
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0
0 0.0
0 -2 -4 -6 -8 V -11 0 -2 -4 -6 -8 -10 -12 -14 A -18
VDS ID
S
-24
-22
-20 4
gfs
ID
-18
-16
3
-14
-12
-10 2
-8
-6
1
-4
-2
0 0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20
VGS ID
Page 6 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Drain-source on-state resistance Gate threshold voltage
RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : I D = -6.2 A, V GS = -10 V parameter: VGS = VDS , ID = -250 µA
SPD08P06P
1.0 -5.0
W V
98%
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0.8 -4.0
RDS(on)
V GS(th)
0.7 -3.5
typ
0.6 -3.0
0.5 -2.5
2%
98%
0.4 -2.0
typ
0.3 -1.5
0.2 -1.0
0.1 -0.5
0.0 0.0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj
pF Ciss
-10 1
IF
C
10 2
Coss
Crss
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1 -10 -1
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD
Page 7 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Avalanche energy Typ. gate charge
EAS = f (Tj) VGS = f (QGate )
para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W parameter: ID = -8.8 A pulsed
SPD08P06P
80 -16
mJ V
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60 -12
E AS
VGS
50 -10
40 -8
0,2 VDS max 0,8 VDS max
30 -6
20 -4
10 -2
0 0
25 45 65 85 105 125 145 °C 185 0 2 4 6 8 10 12 nC 15
Tj QGate
SPD08P06P
-72
-68
V(BR)DSS
-66
-64
-62
-60
-58
-56
-54
-60 -20 20 60 100 140 °C 200
Tj
Page 8 1999-11-22
SPD08P06P
Preliminary data SPU08P06P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 9 1999-11-22