Problem Set 3 - PN Junction and DC Circuits - 2024
Problem Set 3 - PN Junction and DC Circuits - 2024
Problem Set 3 - PN Junction and DC Circuits - 2024
Faculty of Engineering
Computer and Artificial Intelligence Program
(CAIE)
Introduction to Physical Electronics Spring 2024
PHM123
Put (T) on the true statement or (F) on the false statement. You should provide the
correct statement for the false one.
1 At thermal equilibrium, the total current through a 𝑝𝑛 junction is zero because the electron current
is balanced by the hole current.
2 The built-in potential increases as the doping on both sides of the junction are increased.
3 As the temperature is increased, the built-in potential is decreased.
4 Under forward bias, a reduction in potential barrier is associated with an increase of the diffusion
current.
5 The reverse saturation current is due to the drift of minority carriers through the depletion layer.
6 For the same doping, the cut-in voltage (built in voltage) of a diode made of low energy gap
semiconductor is higher than that of a diode made of high energy gap semiconductor.
7 Increasing reverse bias above few millivolts suppresses the diffusion current and does not
significantly affect the drift current.
8 The p-n junction reverse saturation current is controlled by diffusion of minority carriers towards
the depletion region.
Problems
1- For the circuit shown in the figure,
a) State the number of
i. nodes,
ii. major nodes,
iii. meshes.
Label them clearly on the circuit
b) Name
i. 2 branches
ii. 2 loops that are NOT meshes.
1
2- Find the equivalent resistance as seen by the
source.
𝒊𝒐
𝒗𝒈 𝒗𝟏 𝒗𝒐
− −
2
7-
a) Use the node-voltage
method to find 𝒗𝒐 for the
+ +
circuit shown in the
figure. 𝒗∆ 𝒗𝒐
b) Find the total power
supplied in the circuit. − −
9-
a) Use the node-voltage method to
find the branch currents 𝒊𝟏 , 𝒊𝟐
and 𝒊𝟑 in the circuit shown in
the figure.
b) Check your solution by showing
that the power dissipated in the
circuit equals the power
developed.