IPQC60R017S7A

MOSFET
600VCoolMOSªSJS7APowerDevice PG-HDSOP-22
22
IPQC60R017S7AisahighvoltagepowerMOSFET,designedasstatic
switchaccordingtothesuperjunction(SJ)principlepioneeredbyInfineon 12

Technologies.
TAB
IPQC60R017S7AcombinestheexperienceoftheleadingSJMOSFET
supplierwithhighclassinnovationenablinglowRDS(on)inQDPAKpackage.
TheS7Aseriesisoptimisedforlowfrequencyswitchingandhighcurrent 1
applicationlikecircuitbreakers.
11

Features
•Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit
breakersanddiodeparalleling/replacementinbridgerectifiers). Drain
Pin 12-22, Tab
•S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•KelvinSourcepinimprovesswitchingperformanceathighcurrent.
•QDPAKbottomsidecoolingpackageisMSL1compliant,totalPb-free Gate *1

andsuitableforstandardPCBassemblingflow. Pin 1
Driver
Source
Pin 2 Power

Benefits *1: Internal body diode

Source
Pin 3-11

•S7AenablinglowRDS(on)forhighconstantcurrent.
•IncreasedperformancebyusingMOSFETinsteadofdiodeinthe
application(e.g.synchronousrectification).
•S7Atechnologyenables17mΩRDS(on)inacompactfootprint.
•ReducedparasiticsourceinductancebyKelvinSourceimprovesstability
forextremehighcurrenthandlingandeaseofuseduetolessringing.
•ImprovedthermalsenableSMDQDPAKpackagetobeusedinhigh
currentdesigns.

Potentialapplications
Circuitbreakers(HVBatterydisconnectswitch,DCandAClowfrequency
switch,HVE-fuse)anddiodeparalleling/replacementforhigh
power/performanceapplications.

Productvalidation
QualifiedaccordingtoAECQ101

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.Forproductionpartapproval
process(PPAP)releaseweproposetoshareapplicationrelated
informationduringanearlydesignphasetoavoiddelaysinPPAPrelease.
PleasecontactInfineonsalesoffice.

Table1KeyPerformanceParameters
Parameter Value Unit
RDS(on),max 17 mΩ
Qg,typ 196 nC
VSD 0.82 V
Pulsed ISD, IDS 491 A

Type/OrderingCode Package Marking RelatedLinks

IPQC60R017S7A PG-HDSOP-22 60A017S7 see Appendix A

Final Data Sheet 1 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
TC=140°C
Current is limited by Tj max = 150°C;
Drain current rating ID - - 30 A
Lower case temp does increase
current capability
Pulsed drain current1) ID,pulse - - 491 A TC=25°C
Avalanche energy, single pulse EAS - - 378 mJ ID=4.5A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 4.5 A -
MOSFET dv/dt ruggedness 2)
dv/dt - - 20 V/ns VDS=0Vto300V
Gate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 500 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Extended operating junction
Tj 150 - 175 °C ≤50 h in the application lifetime
temperature
Mounting torque - - - n.a. Ncm -
TC=140°C
Current is limited by Tj max = 150°C;
Diode forward current rating IS - - 30 A
Lower case temp does increase
current capability
Diode pulse current1) IS,pulse - - 491 A TC=25°C
VDS=0to300V,ISD<=29A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 5 V/ns
see table 8
VDS=0to300V,ISD<=29A,Tj=25°C
Maximum diode commutation speed dif/dt - - 1000 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Pulse width tp limited by Tj,max
2)
The dv/dt has to be limited by appropriate gate resistor
3)
Identical low side and high side switch
Final Data Sheet 3 Rev.2.0,2022-11-23
 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.25 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
RthJA - 45 55 °C/W layer, 70µm thickness) copper area.
for SMD version
Tap exposed to air. PCB is vertical
without air stream cooling.
Soldering temperature, reflow soldering
Tsold - - 260 °C reflow MSL1
allowed

Final Data Sheet 4 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
The CoolMOS mentioned in this datasheet shall not be operated in linear mode.
For any questions in this regard, please contact Infineon sales office.
For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer
evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the
necessary technical support by Infineon
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.89mA
- - 6 VDS=600V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 60 - VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.015 0.017 VGS=12V,ID=29A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.036 - VGS=12V,ID=29A,Tj=150°C
Gate resistance RG - 0.9 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 7370 - pF VGS=0V,VDS=300V,f=250kHz
Output capacitance Coss - 116 - pF VGS=0V,VDS=300V,f=250kHz
Effective output capacitance, energy
Co(er) - 395 - pF VGS=0V,VDS=0to300V
related1)
Effective output capacitance, time
Co(tr) - 3505 - pF ID=constant,VGS=0V,VDS=0to300V
related2)
Output charge Qoss - 1051 - nC VGS=0V,VDS=0to300V
VDD=300V,VGS=13V,ID=29A,
Turn-on delay time td(on) - 35 - ns
RG=4.5Ω;seetable9
VDD=300V,VGS=13V,ID=29A,
Rise time tr - 7 - ns
RG=4.5Ω;seetable9
VDD=300V,VGS=13V,ID=29A,
Turn-off delay time td(off) - 160 - ns
RG=4.5Ω;seetable9
VDD=300V,VGS=13V,ID=29A,
Fall time tf - 9 - ns
RG=4.5Ω;seetable9

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to300V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to300V
Final Data Sheet 5 Rev.2.0,2022-11-23
 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 40 - nC VDD=300V,ID=29A,VGS=0to12V
Gate to drain charge Qgd - 65 - nC VDD=300V,ID=29A,VGS=0to12V
Gate charge total Qg - 196 - nC VDD=300V,ID=29A,VGS=0to12V
Gate plateau voltage Vplateau - 5.4 - V VDD=300V,ID=29A,VGS=0to12V

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.82 - V VGS=0V,IF=29A,Tj=25°C
VR=300V,IF=29A,diF/dt=100A/µs;
Reverse recovery time trr - 510 - ns
see table 8
VR=300V,IF=29A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 11.5 - µC
see table 8
VR=300V,IF=29A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 45 - A
see table 8

Final Data Sheet 6 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
600 103

1 µs
500 102

10 µs
1
400 10

100 µs
Ptot[W]

ID[A]
0
300 10

1 ms

200 10-1 10 ms

100 10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

102 1 µs

0.5
10 µs
1 -1
10 10
0.2
ZthJC[K/W]

100 µs 0.1
ID[A]

100
0.05
1 ms 0.02

10-1
10 -2 0.01
10 ms
single pulse
-2
10

10-3 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
800 500
20 V 20 V

12 V 12 V
400
10 V
600 10 V

8V 300 8V
ID[A]

ID[A]
400

200

200
100

0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.048 2.5

8V

0.043 2.0
RDS(on)[normalized]

10 V
RDS(on)[Ω]

0.038 1.5
12 V

20 V
0.033 1.0

0.028 0.5
0 100 200 300 400 500 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=29A;VGS=12V

Final Data Sheet 8 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
750 12

25 °C

10
600
300 V

8 120 V
450

VGS[V]
ID[A]

150 °C
6

300

150
2

0 0
0 2 4 6 8 10 12 0 50 100 150 200
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=29Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Forwardcharacteristicsofreversediode
3
10 103

102 102

25 °C 125 °C
25 °C
IF[A]

IF[A]

101 101
125 °C

100 100

10-1 10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD[V] VSD[V]
IF=f(VSD);VGS=0V;parameter:Tj IF=f(VSD);VGS=12V;parameter:Tj

Final Data Sheet 9 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

Diagram13:Avalancheenergy Diagram14:Drain-sourcebreakdownvoltage
400 680

660

300
640

620
EAS[mJ]

VBR(DSS)[V]
200

600

580
100

560

0 540
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj[°C] Tj[°C]
EAS=f(Tj);ID=4.5A;VDD=50V VBR(DSS)=f(Tj);ID=1mA

Diagram15:Typ.capacitances Diagram17:Typ.Qossoutputcharge
5
10 1200

1000

104
Ciss
800
Qoss[nC]
C[pF]

103 600

400
Coss
102

200

Crss
101 0
0 50 100 150 200 250 300 0 50 100 150 200 250 300
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=250kHz Qoss=f(VDS);VGS=0V

Final Data Sheet 10 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

6PackageOutlines

PACKAGE - GROUP
NUMBER: PG-HDSOP-22-U02
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 2.20 2.35
A1 0.00 0.15
A2 0.5
b 0.50 0.70
b1 0.50 0.90
c 0.46 0.58
D 15.30 15.50
D1 10.23 10.43
E 14.90 15.10
E1 11.91 12.11
e 1.14
N 22
H 20.81 21.11
L 1.20 1.40
O 5°

Figure1OutlinePG-HDSOP-22,dimensionsinmm

Final Data Sheet 12 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

7AppendixA

Table11RelatedLinks
• IFXCoolMOSS7Webpage:www.infineon.com

• IFXCoolMOSS7applicationnote:www.infineon.com

• IFXCoolMOSS7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.0,2022-11-23

 600VCoolMOSªSJS7APowerDevice
IPQC60R017S7A

RevisionHistory
IPQC60R017S7A

Revision:2022-11-23,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2022-11-23 Release of final version

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.0,2022-11-23

Mouser Electronics

Authorized Distributor

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