IQD020N10NM5

MOSFET
OptiMOSTM5Power-Transistor,100V PG-TSON-8

Features 5
6
7
•N-channel,normallevel 8

•Verylowon-resistanceRDS(on)
•Superiorthermalresistance
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant 4
•Halogen-freeaccordingtoIEC61249-2-21 3
2
1

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter Value Unit Gate *1

Pin 4
VDS 100 V
Source
RDS(on),max 2.05 mΩ *1: Internal body diode Pin 1-3

ID 276 A
Qoss 125 nC
QG 107 nC

Type/OrderingCode Package Marking RelatedLinks

IQD020N10NM5 PG-TSON-8 02010N5 -

Final Data Sheet 1 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 276 VGS=10V,TC=25°C
- - 195 VGS=10V,TC=100°C
Continuous drain current 1)
ID A
- - 169 VGS=6V,TC=100°C
- - 26 VGS=10V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3) ID,pulse - - 1104 A TC=25°C
Avalanche energy, single pulse 4)
EAS - - 756 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 333 TC=25°C
Power dissipation Ptot W
- - 3.0 TA=25°C,RthJA=50°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.45 °C/W -
Thermal resistance, junction - ambient,
RthJA - - 50 °C/W -
6 cm² cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for source
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.0,2023-08-08
 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=159µA
- 0.1 1 VDS=100V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 1.8 2.05 VGS=10V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 2.2 2.75 VGS=6V,ID=25A
Gate resistance RG - 0.58 - Ω -
Transconductance gfs - 160 - S |VDS|≥2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 7300 9500 pF VGS=0V,VDS=50V,f=1MHz
Output capacitance1) Coss - 1000 1300 pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance 1)
Crss - 42 74 pF VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 15 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Rise time tr - 6 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 28 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Fall time tf - 7 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 32 - nC VDD=50V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 22 - nC VDD=50V,ID=50A,VGS=0to10V
Gate to drain charge 1)
Qgd - 23 35 nC VDD=50V,ID=50A,VGS=0to10V
Switching charge Qsw - 33 - nC VDD=50V,ID=50A,VGS=0to10V
Gate charge total 1)
Qg - 107 134 nC VDD=50V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=50A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 93 - nC VDS=0.1V,VGS=0to10V
Output charge 1)
Qoss - 125 166 nC VDS=50V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.0,2023-08-08
 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 256 A TC=25°C
Diode pulse current IS,pulse - - 1104 A TC=25°C
Diode forward voltage VSD - 0.82 1.0 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time 1)
trr - 48 96 ns VR=50V,IF=25A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 71 142 nC VR=50V,IF=25A,diF/dt=100A/µs
Reverse recovery time 1)
trr - 32 64 ns VR=50V,IF=50A,diF/dt=1000A/µs
Reverse recovery charge 1)
Qrr - 447 894 nC VR=50V,IF=50A,diF/dt=1000A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.0,2023-08-08
 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
350 300

300
250

250
200

200
Ptot[W]

ID[A]
150

150

100
100

50
50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
4
10 101
single pulse
0.01
0.02
1 µs 0.05
103
0.1
0.2
10 µs 100 0.5

102 10 ms 100 µs
1 ms
ZthJC[K/W]
ID[A]

101 10-1

100 DC

10-2

10-1

10-2 10-3
10-1 100 101 102 103 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
1200 6
10 V 8V
7V

1000 5

4.5 V
5V
800 4

6V

RDS(on)[mΩ]
6V
ID[A]

600 3

7V

400 2 8V

10 V
5V
200 1
4.5 V

0 0
0 1 2 3 4 5 0 100 200 300 400 500 600
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
1200 6

25 °C
1000 5

800 4
RDS(on)[mΩ]

175 °C
ID[A]

600 3

100 °C
400 175 °C 2

25 °C

200 1 -55 °C

0 0
0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=50A;parameter:Tj

Final Data Sheet 7 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.4 4.0

3.5
2.0

3.0
RDS(on)(normalizedto25°C)

1590 µA
1.6
2.5

VGS(th)[V]
159 µA
1.2 2.0

1.5
0.8

1.0

0.4
0.5

0.0 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 104
25 °C
25 °C, max
Ciss 175 °C
175 °C, max

103 103

Coss
C[pF]

IF[A]

102 102

Crss

101 101
0 20 40 60 80 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10
20 V
50 V
80 V

25 °C
6

VGS[V]
100 °C
IAV[A]

101
150 °C
4

100 0
100 101 102 103 0 20 40 60 80 100 120
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD

Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms

108

106

104

102
VBR(DSS)[V]

100

98

96

94
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

5PackageOutlines

PACKAGE - GROUP
NUMBER: PG-TSON-8-U04
MILLIMETERS
DIMENSIONS
MIN. MAX.
A --- 1.10
A1 --- 0.05
b 0.37 0.47
c 0.20
D 5.00
D1 3.93 4.13
D2 4.13 4.33
E 6.00
e 1.27
L 1.00 1.20
L1 2.16 2.36
L2 0.50 0.70
L3 0.18 0.38
N 8

Figure1OutlinePG-TSON-8,dimensionsinmm

Final Data Sheet 10 Rev.2.0,2023-08-08

 OptiMOSTM5Power-Transistor,100V
IQD020N10NM5

RevisionHistory
IQD020N10NM5

Revision:2023-08-08,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-08-08 Release of final version

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Final Data Sheet 11 Rev.2.0,2023-08-08

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