Datasheet

30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

General Description Symbol

The Sanrise SRC60R030FB is a high voltage
power MOSFET, fabricated using advanced super
junction technology. The resulting device has
extremely low on resistance, low gate charge and
fast switching time, making it especially suitable
for applications which require superior power
density and outstanding efficiency.
The SRC60R030FB break down voltage is 600V
Figure 1 Symbol of SRC60R030FB
and it has a high rugged avalanche characteristics.
The SRC60R030FB is available in TO-247
package.

Features Package Type

◼ Ultra Low RDS(ON) = 30mΩ @ VGS = 10V.
◼ Ultra Low Gate Charge, Qg=124.1nC typ.
◼ Fast switching capability 1
◼ Robust design with better EAS performance
◼ Low Qrr
TO-247
Application
Figure 2 Package Type of SRC60R030FB
◼ EV Charger
◼ High Power Application
◼ High Performance Application

Ordering Information
SRC60R030FB□□–□
Circuit Type E: Lead Free
G: Green
Package Blank: Tube
T: TO-247 TR: Tape & Reel

Part Number Marking ID Packing

Package
Lead Free Green Lead Free Green Type
TO-247 SRC60R030FBT-E SRC60R030FBT-G SRC60R030FBTE SRC60R030FBTG Tube

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 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Drain-Source Voltage VDSS 600 V
Gate-Source Voltage (static) VGSS ±20 V
Gate-Source Voltage (dynamic), AC (f>1 Hz) VGSS ±30 V
TC=25ºC 91
Continuous Drain Current ID A
TC=125ºC 41
Pulsed Drain Current (Note 2) IDM 273 A
Avalanche Energy, Single Pulse (Note 3) EAS 1200 mJ
Avalanche Energy, Repetitive (Note 2) EAR 1.0 mJ
Avalanche Current, Repetitive (Note 2) IAR 7.5 A
Continuous Diode Forward Current IS 91 A
Diode Pulse Current IS.PULSE 273 A
MOSFET dv/dt Ruggedness, VDS<=480V dv/dt 80 V/ns
Reverse Diode dv/dt, VDS<=480V, ISD<=ID dv/dt 50 V/ns
Power Dissipation Ptot 595 W
Operating Junction Temperature TJ 150 ºC
Storage Temperature TSTG -55 to 150 ºC
Lead Temperature (Soldering, 10 sec) TLEAD 260 ºC
Note:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. IAS =7.5A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C

Thermal characteristics

Parameter Symbol Min Typ Max Unit

Thermal resistance, Junction-to-Case TO-247 RthJC 0.21 ºC /W
Thermal resistance, Junction-to-Ambient TO-247 RthJA 54 ºC /W

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Electrical Characteristics

TJ = 25℃, unless otherwise specified.

Parameter Symbol Test Conditions Min Typ Max Unit
Statistic Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 600 V
Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 10 uA
Forward IGSSF VGS=20V, VDS=0V 100
Gate-Body Leakage Current nA
Reverse IGSSR VGS=-20V, VDS=0V -100
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=2.2mA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=34A 26.4 30 mΩ
Gate Resistance RG f=1MHz, Open Drain 2.0 Ω
Dynamic Characteristics
Input Capacitance CISS 8.3 nF
VDS=50V, VGS=0V,
Output Capacitance COSS 393 pF
f=1MHz
Reverse Transfer Capacitance CRSS 2.7 pF
Effective output capacitance, energy 222.
CO(er)
related NOTE5 VGS=0V, 4
pF
Effective output capacitance, time VDS=0…400V
CO(tr) 1354
related NOTE6
Turn-on Delay Time td(on) 21
Rise Time tr VDD=400V, ID=34A 13
ns
Turn-off Delay Time td(off) RG=3.3Ω, VGS=10V 71
Fall Time tf 4.5
Gate Charge Characteristics
Gate to Source Charge Qgs 58.5
Gate to Drain Charge Qgd 33.7
VDD=480V, ID=34A nC
124.
Gate Charge Total Qg VGS=0 to 10V
1
Gate Plateau Voltage Vplateau 6.5 V
Reverse Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS=0V, ISD=34A 0.9 1.1 V
Reverse Recovery Time trr 175 ns
VR=400V, IF=34A
Reverse Recovery Charge Qrr 1.28 uC
dIF/dt=100A/us
Peak Reverse Recovery Current Irrm 14.6 A
Note:
5. CO(er) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to
480V
6. CO (tr) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to
480 V

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Typical Performance Characteristics

Figure 3: Power Dissipation Figure 4: Max. Transient Thermal Impedance

TO-247 TO-247

Ptot = f(Tc) Z(thJC) = f(tp); parameter: D = tp/T

Figure 5: Safe Operating Area Figure 6: Safe Operating Area

ID = f(VDS); Tc= 25ºC; VGS>7V; parameter tp ID = f(VDS); Tc= 80ºC; VGS>7V; parameter tp

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 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Figure 7: Typ. Output Characteristics Figure 8: Typ. Output Characteristics

ID = f(VDS); Tj= 25ºC; parameter: VGS ID = f(VDS); Tj= 125ºC; parameter: VGS

Figure 9: Typ. Drain-Source On-State Resistance Figure 10: Typ. Drain-Source On-State Resistance

RDS(ON) =f(ID); Tj=125ºC; parameter: VGS RDS(ON)=f(Tj); ID=34A; VGS=10V

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Figure 11: Typ. Transfer Characteristics Figure 12: Typ. Gate Charge

ID = f(VGS); VDS = 20V VGS= f(Qgate ), ID= 34A pulsed

Figure 14: Forward Characteristics of Reverse

Figure 13: Drain-Source Breakdown Voltage
Diode

VBR(DSS)=f(Tj); ID=10mA IF=f(VSD); parameter: Tj

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD
 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Figure 15: Avalanche Energy Figure 16: Typ. Capacitances

EAS=f(Tj); ID=7.5A; VDD=60V C=f(VDS); VGS=0; f=1MHz

Figure 17: COSS Stored Energy

EOSS=f(VDS)

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Test Circuits
1. Gate Charge Test Circuit & Waveform

2. Switch Time Test Circuit

3. Unclaimed Inductive Switching Test Circuit & Waveforms

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

4. Test Circuit and Waveform for Diode Characteristics

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Mechanical Dimensions

TO-247 Unit: mm

1 2 3

Dimensions(mm) Dimensions(mm)
Symbol Symbol
Min. Typ. Max. Min. Typ. Max.
A 4.80 5.00 5.20 E2 - 5.00 -
A1 2.21 2.41 2.61 E3 - 2.50 -
A2 1.90 2.00 2.10 e 5.44(BSC)
b 1.10 1.20 1.35 L 19.42 19.92 20.42
b1 - 2.00 - L1 - 4.13 -
b2 - 3.00 - P 3.50 3.60 3.70
c 0.55 0.60 0.75 P1 - - 7.40
D 20.80 21.00 21.20 P2 - 2.50 -
D1 - 16.55 - Q - 5.80 -
D2 - 1.20 - S 6.05 6.15 6.25
E 15.60 15.80 16.00 T - 10.00 -
E1 - 13.30 - U - 6.20 -

Nov. 2020, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD

 Datasheet
30mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R030FB

Shenzhen Sanrise Technology Co., LTD

http://www.sanrise-tech.com

IMPORTANT NOTICE
Shenzhen Sanrise Technology Co., LTD reserves the right to make changes without further notice to
any products or specifications herein. Shenzhen Sanrise Technology Co., LTD does not assume any
responsibility for use of any its products for any particular purpose, nor does Shenzhen Sanrise
Technology Co., LTD assume any liability arising out of the application or use of any its products or
circuits. Shenzhen Sanrise Technology Co., LTD does not convey any license under its patent rights or
other rights nor the rights of others.

Main Site:
- Headquarter - Shanghai Office
Shenzhen Sanrise Technology Co., LTD. Shenzhen Sanrise Technology Co., LTD
A1206, Skyworth building, No. 008, gaoxinnan 1st Road, Rm.702, Building A, No. 666, Zhangheng Road,
Gaoxin District, Yuehai street,, Nanshan District, ShenZhen, Zhangjiang Hi-Tech Park, Shanghai, P.R.China
P.R.China
Tel: +86-755-22953335 Tel: +86-21-68825918
Fax: +86-755-22916878

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