AP9997GK-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 100V

▼ Lower Gate Charge RDS(ON) 120mΩ
S
▼ Fast Switching Characteristic ID 3.2A
D
▼ Halogen Free & RoHS Compliant Product SOT-223 G

Description D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
low on-resistance and cost-effectiveness.
S
The SOT-223 package is designed for suface mount
application, larger heatsink than SO-8 and SOT package.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage +20 V
3
ID@TA=25℃ Continuous Drain Current 3.2 A
3
ID@TA=70℃ Continuous Drain Current 2.6 A
1
IDM Pulsed Drain Current 20 A
PD@TA=25℃ Total Power Dissipation 2.8 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 45 ℃/W

Data and specifications subject to change without notice 1

201006153
AP9997GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A - - 120 mΩ
VGS=4.5V, ID=2A - - 200 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=3A - 3 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=80V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=3A - 14 22 nC
Qgs Gate-Source Charge VDS=80V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC
2
td(on) Turn-on Delay Time VDS=50V - 4.5 - ns
tr Rise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tf Fall Time RD=50Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=25V - 65 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.5A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=3A, VGS=0V, - 39 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 62 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9997GK-HF

20 20

T A =25 o C 10V T A =150 o C 10V

7.0V 7.0V
16 5.0V 16
5.0V
4.5V
ID , Drain Current (A)

ID , Drain Current (A)

4.5V
12 12

8 8

4
V G =3.0V 4
V G =3.0V

0 0
0 1 2 3 4 5 0 2 4 6 8 10

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

140 2.4

ID=2A ID=3A
T A =25 o C V G =10V
130
2.0
Normalized RDS(ON)

120
RDS(ON) (mΩ)

1.6

110

1.2

100

0.8
20
90

80 0.4
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.8

1.6
8

1.4
VGS(th) (V)

6
o o
IS (A)

T j =150 C T j =25 C
1.2

2
0.8

0 0.6
0 0.4 0.8 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9997GK-HF

f=1.0MHz
12 10000

10
VGS , Gate to Source Voltage (V)

I D =3A
V DS =80V
8 1000

C (pF)
C iss
6

4 100

C oss
C rss
2

0 10
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10
Operation in this area
limited by RDS(ON)
0.1 0.1

0.05
100us
ID (A)

1 1ms 0.02

0.01
PDM

0.01 t
10ms T
Single Pulse
0.1 100ms
Duty factor = t/T

T A =25 o C Peak Tj = PDM x Rthja + T a

1s Rthja = 120℃/W
Single Pulse
0.001
0.01
DC 0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform