Assignment - 1 (Semiconductor Basics)

Assignment No.
1
Indian Institute of Technology Mandi
School of Computing and Electrical Engineering
IC-161: Applied Electronics
Q1. Calculate probability of non-occupancy for the energy level which lies 0.01 eV above the
Fermi energy level at 27o C.
eV
Given: T = 27o C=300o K, k = 8.625 × 10−5 o
K
Q2. Fermi level in potassium is 2.1 eV. What are the energies for which the probability of
occupancy at 300 K are 0.99 and 0.01.
eV
Given: T = 27o C=300o K, k = 8.625 × 10−5 , EF = 2.1 eV
oK
When f(E) = 0.99 and f(E) = 0.01, E =?
Q3. In a solid, consider the energy level lying 0.012 eV below the Fermi level at 27o C. What
is the probability of this level being occupied by an electron?
eV
Given: T = 27o C=300o K, k = 8.625 × 10−5 o
K
Q4. What is the probability of an electron being thermally excited to conduction band in
intrinsic Si at 27o C. The band gap energy of Si is 1.12 eV.
eV
Given: T = 27o C=300o K, k = 8.625 × 10−5 o , Eg = 1.12 eV
K
Q5. In an n-type semiconductor, the Fermi level lies 0.4 eV below the conduction band. If the
concentration of donor atoms is doubled, find the new position of the Fermi level w.r.t.
conduction band.
Q6. Find resistivity of Ge at 300 o K. Given density of carriers is (2.5×1019) ⁄m3 . Mobility of
electrons is 0.39 m2 ⁄V − sec, mobility of holes = 0.19 m2 ⁄V − sec.
Q7. The resistivity of intrinsic InSb at room temperature is 2 × 10−4 ohm-cm. If the mobility
of electron is 6 m2 ⁄V − s and mobility of hole is 0.2 m2 ⁄V − s, calculate its intrinsic carrier
density.
Q8. Calculate the number of donor atoms which must be added to an intrinsic semiconductor
to obtain the resistivity as 10−6 ohm-cm. Use mobility of electron= 1000cm2 ⁄V − sec.
Q9. Find resistivity of copper assuming that each atom contributes one free electron for
conduction. Given density of Cu= 8.96 gm⁄cm3 , atomic weight= 63.5, Avogadro’s
Number= 6.023 × 1023 ⁄gm − mol, Mobility of electron = 43.3 cm2 ⁄V − sec.
Q10. Calculate conductivity of a germanium sample if donor impurity atoms are added to the
extent of one part in 108 germanium atoms at room temperature. Assume that only one
electron of each atom takes part in conduction process.
1
Avogadro’s number= 6.023 × 1023 ⁄gm − mol, Density of Ge = 5.32 gm⁄cm3 , Atomic
weight of Ge = 72.6, mobility of electrons= 3800 cm2 ⁄volt − sec.
Q11. Silicon sample is doped with1017 As atoms⁄cm3 . Intrinsic concentration for silicon at
room temperature is 1.5 × 1010 ⁄cm3 . What is the equilibrium hole concentration at room
temperature? Show the position of Fermi level.
Q12. The mobilities of free electron & holes in a pure Ge are 0.38 & 0.18m2 ⁄V − S. Find the
value of intrinsic conductivity. Assume ni = 2.5 × 1019 ⁄m3 at room temperature.
Q13. In a Ge sample, a donor type impurity is added to the extent of 1 atoms per 108 Ge
atoms. Show that resistivity of the Ge sample drops to 3.7 ohm.cm.
Given: μn = 3800 cm2 ⁄V. sec, 𝑞 = 1.6 × 10−19 Coulombs

μp = 1800 cm2 ⁄V. sec, NGe = 4.41 × 1022 ⁄cm3
ni = 2.5 × 1013 ⁄cm3
Q14. Consider an intrinsic Si bar of cross-section 5 cm2 and length 0.5 cm at room
temperature 300 K. An average field of 20 V⁄cm is applied across the ends of the Si bar.
Given: μn = 1400 cm2 ⁄V. sec, 𝑞 = 1.6 × 10−19 Coulombs
μp = 450 cm2 ⁄V. sec, ni = 1.5 × 1010 ⁄cm3
(I) Calculate:
a) Electron & hole components of the current density.
b) Total current (I) in the bar.
c) Resistivity of the bar.
(II) If now donor impurity to the extent of 1 part in 108 atoms of Si is added, find the density
of minority carrier and the resistivity.
Given: No. of Si atoms⁄m3 = 4.99 × 1028 .
Q15. Consider a Si pn-junction at room temp. doped at NA = 1016 ⁄cm3 in the p-region and
ND = 1017 ⁄cm3 in the n-region. Intrinsic carrier density is 1.5 × 1010 ⁄cm3 at room temp.
Calculate (1) Built in potential, (2) Width of depletion region.
Q16. A Ge diode displays a forward voltage of 0.25V at 10 mA current at room temp. Find
the reverse saturation current.

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Given: μn = 3800 cm2 ⁄V. sec, 𝑞 = 1.6 × 10−19 Coulombs

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