Scribd Logo
Upload

Welcome to Scribd!

  • 2 views

    Lecture 10

    Uploaded by

    rahe220916

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Lecture 10

    Uploaded by

    rahe220916
    2 views33 pages

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2 views33 pages

    Lecture 10

    Uploaded by

    rahe220916

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 33

    Field Effect Transistor

    Text Book
    Electronic Devices and Circuit Theory
    by R Boylestad and L Nashelsky
    Transistor Family

    Transistor

    BJT FET

    NPN PNP JFET MOSFET

    N-Channel P-Channel D-MOSFET E-MOSFET

    N-Channel P-Channel N-Channel P-Channel

    9/23/2024 2
    Field effect transistor (FET)

    C D

    G
    B

    E S

    9/23/2024 3
    FET Characteristics
    • FET is voltage controlled device
    • High input impedance than BJTs
    • Voltage gain is less than BJTs
    • FETs are more temperature stable than BJTs
    • FETs are minimal in size and weight
    • Low power consumption
    • Output impedance are comparable between FETs and BJTs

    Applications:
    • Can be used as linear amplifier or digital device in logic circuits
    • Suitable for IC
    • Widely used in high frequency applications
    • In buffering (interfacing) applications.

    9/23/2024 4
    Construction of JFET (n-ch)

    9/23/2024 5
    Operation

    9/23/2024 6
    Pinch-off voltage

    9/23/2024 7
    Characteristics

    9/23/2024 8
    Voltage-controlled resistor and Symbols

    Symbols

    9/23/2024 9
    Control relations and Transfer characteristics

    9/23/2024 10
    Plotting transfer curve

    9/23/2024 11
    Four points

    9/23/2024 12
    Example-1
    Plot the transfer characteristics of (i) an n-channel JFET having IDSS=12mA and
    VP=-6V and (ii) a p-channel JFET having IDSS=4mA and VP=3V

    9/23/2024 13
    Summary

    9/23/2024 14
    Depletion type MOSFET (n-ch)

    Figure 5.24 n-Channel depletion-type MOSFET


    Figure 5.23 n-Channel depletion-type with VGS =0 V and an applied voltage VDD.
    MOSFET.
    9/23/2024 15
    Operation

    9/23/2024 16
    Characteristics

    9/23/2024 17
    Depletion type MOSFET (p- ch)

    9/23/2024 18
    Circuit symbols

    9/23/2024 19
    Example-2
    Draw the transfer characteristic of an
    n-channel depletion type MOSFET
    having IDSS=10mA and VP=-4V.

    9/23/2024 20
    Enhancement type MOSFET (n-ch)

    9/23/2024 21
    Operation

    9/23/2024 22
    Effect of changing VDS

    Figure 5.33 Change in channel and depletion region with increasing level of VDS for
    a fixed value of VGS.

    9/23/2024 23
    Characteristics

    9/23/2024 24
    Shockley equation

    9/23/2024 25
    N-Channel E-MOSFET

    9/23/2024 26
    Enhancement type MOSFET (p- ch)

    9/23/2024 27
    Circuit symbols

    9/23/2024 28
    Example-3
    Plot the transfer characteristic of an n-channel enhancement type MOSFET
    having VGS(TH)=3V, and given ID(on) =3mA and VGS(on)=10V

    9/23/2024 29
    VMOS

    Compared with commercially


    available planar MOSFETs, VMOS
    FETs have reduced channel resistance
    levels and higher current and power
    ratings.

    VMOS FETs have a positive


    temperature coefficient that will
    combat the possibility of thermal
    runaway.

    The reduced charge storage levels result in faster switching times for VMOS
    construction compared to those for conventional planar construction.

    9/23/2024 30
    CMOS

    CMOS with the connections indicated in next


    Fig.
    CMOS inverter.

    9/23/2024 31
    MESFETs
    A MESFET (metal–semiconductor field-effect transistor) is a field-effect
    transistor semiconductor device similar to a JFET with a Schottky (metal–
    semiconductor) junction instead of a p–n junction for a gate.

    9/23/2024 S M Abdur Razzak, EEE, RUET 32


    Practice yourself and send me
    your feedback, if any.

    9/23/2024 33

    You might also like