2SB1266

Ordering number:EN2538A
PNP/NPN Triple Diffused Planar Type Silicon Transistors
2SB1266/2SD1902
AF Power Amplifier Applications
Features Package Dimensions

· Suitable for sets whose heighit is restricted. unit:mm
· Wide ASO (adoption of MBIT process). 2049B
· High reliability.
[2SB1266/2SD1902]
E : Emitter
C : Collector
( ) : 2SB1266 B : Base
Specifications SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)60 V
Collector-to-Emitter Voltage VCEO (–)60 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)3 A
Collector Current (Pulse) I CP (–)8 A
Collector Dissipation PC 1.65 W
Tc=25˚C 30 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)100 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)100 µA
hFE1 VCE=(–)5V, IC=(–)0.5A 70* 280*
DC Current Gain
hFE2 VCE=(–)5V, IC=(–)3A 20
Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)0.5A (8)40 MHz
Output Capacitance Cob VCB=(–)10V, f=1MHz (60) pF
110 pF
* : The 2SB1266/2SD1902 are classified by 0.5A hFE as follows :
70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D251MH/4167TA, TS No.2538–1/4
2SB1266/2SD1902
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)0.2A (–)0.4 (–)1 V
Base-to-Emitter Voltage VBE ICE=(–)5V, IC=(–)0.5A (–)0.7 (–)1 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)1mA, IE=0 (–)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)5mA, RBE=∞ (–)60 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)1mA, IC=0 (–)6 V
No.2538–2/4
2SB1266/2SD1902
No.2538–3/4
2SB1266/2SD1902
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 1998. Specifications and information herein are subject
to change without notice.
PS No.2538–4/4
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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Ordering number:EN2538A

PNP/NPN Triple Diffused Planar Type Silicon Transistors

AF Power Amplifier Applications

Features Package Dimensions

Absolute Maximum Ratings at Ta = 25˚C

Electrical Characteristics at Ta = 25˚C

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

Datasheets for electronics components.

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