20ETF

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VS-20ETF...

-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
2 Base
cathode • Glass passivated pellet chip junction
2
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
1
1 3 • Designed and qualified according to
3 Cathode Anode JEDEC®-JESD 47
TO-220AC 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
APPLICATIONS
IF(AV) 20 A
These devices are intended for use in output rectification
VR 200 V, 400 V, 600 V
and freewheeling in inverters, choppers and converters as
VF at IF 1.3 V
well as in input rectification where severe restrictions on
IFSM 300 A conducted EMI should be met.
trr 60 ns
TJ max. 150 °C DESCRIPTION
Snap factor 0.6 The VS-20ETF0... fast soft recovery rectifier series has been
Package TO-220AC 2L optimized for combined short reverse recovery time and low
Circuit configuration Single forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS


SYMBOL CHARACTERISTICS VALUES UNITS
VRRM Range 200 to 600 V
IF(AV) Sinusoidal waveform 20
A
IFSM 300
trr 1 A, 100 A/μs 60 ns
VF 10 A, TJ = 25 °C 1.2 V
TJ Range -40 to +150 °C

VOLTAGE RATINGS
VRRM, MAXIMUM PEAK REVERSE VRSM, MAXIMUM NON-REPETITIVE IRRM
PART NUMBER VOLTAGE PEAK REVERSE VOLTAGE AT 150 °C
V V mA
VS-20ETF02-M3 200 300
VS-20ETF04-M3 400 500 5
VS-20ETF06-M3 600 700

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 97 °C, 180° conduction half sine wave 20
Maximum peak one cycle 10 ms sine pulse, rated VRRM applied 250 A
IFSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated VRRM applied 316
Maximum I2t for fusing I 2t A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s

Revision: 29-Nov-2021 1 Document Number: 96213


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-20ETF...-M3 Series
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Vishay Semiconductors

ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.3 V
Forward slope resistance rt 12.5 mΩ
TJ = 150 °C
Threshold voltage VF(TO) 0.9 V
TJ = 25 °C 0.1
Maximum reverse leakage current IRM VR = Rated VRRM mA
TJ = 150 °C 5.0

RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr 160 ns IFM
IF at 20 Apk trr
Reverse recovery current Irr 100 A/μs 10 A ta tb
25 °C t
dir
Reverse recovery charge Qrr 1.25 μC dt Qrr
Snap factor S Typical 0.6 IRM(REC)

THERMAL - MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg -40 to +150 °C
temperature range
Maximum thermal resistance,
RthJC DC operation 0.9
junction to case
Maximum thermal resistance,
RthJA 62 °C/W
junction to ambient
Typical thermal resistance,
RthCS Mounting surface, smooth, and greased 0.5
case to heatsink
2 g
Approximate weight
0.07 oz.
minimum 6 (5) kgf · cm
Mounting torque
maximum 12 (10) (lbf · in)
20ETF02
Marking device Case style TO-220AC 2L 20ETF04
20ETF06

Revision: 29-Nov-2021 2 Document Number: 96213


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF...-M3 Series
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Vishay Semiconductors

150 45
20ETF.. Series DC
140 RthJC (DC) = 0.9 K/W 40

Maximum Average Forward


180°
Maximum Allowable Case

35 120°
130 90°
Temperature (°C)

Power Loss (W)


Ø
30 60°
120 Conduction angle
30°
25
110
20 RMS limit
Ø
100
15 Conduction period
90
10
30° 60° 90° 120° 180° 20ETF.. Series
80 5 TJ = 150 °C
70 0
0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 35

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics

150 300
20ETF.. Series At any rated load condition and with
RthJC (DC) = 0.9 K/W rated VRRM applied following surge.
140
Maximum Allowable Case

250 Initial TJ = 150 °C


Forward Current (A)
Peak Half Sine Wave

at 60 Hz 0.0083 s
Temperature (°C)

130
at 50 Hz 0.0100 s
Ø
200
120 Conduction period

110
30° 150

100 60°
90° 100
90
120° 20ETF.. Series
180° DC
80 50
0 5 10 15 20 25 30 35 1 10 100

Average Forward Current (A) Number of Equal Amplitude Half Cycle


Current Pulses (N)
Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current

35 550
180° Maximum non-repetitive surge current
120° 500 versus pulse train duration.
Maximum Average Forward

30
90° 450 Initial TJ = 150 °C
Forward Current (A)
Peak Half Sine Wave

60°
25 No voltage reapplied
Power Loss (W)

30° 400
Rated VRRM reapplied
350
20
RMS limit Ø
300
15 Conduction angle 250

10 200
150
5 20ETF.. Series
TJ = 150 °C 100 20ETF.. Series
0 50
0 5 10 15 20 25 0.001 0.01 0.1 1

Average Forward Current (A) Pulse Train Duration (s)

Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

Revision: 29-Nov-2021 3 Document Number: 96213


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VS-20ETF...-M3 Series
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Vishay Semiconductors

1000

Instantaneous Forward Current (A)


100

10 TJ = 25 °C
TJ = 150 °C

20ETF.. Series
1
0 1 2 3 4 5

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

0.20 70
20ETF.. Series 20ETF.. Series
TJ = 25 °C 60 IFM = 30 A
TJ = 25 °C
Recovery Current (A)
Recovery Time (µs)
trr - Typical Reverse

0.15
Irr - Typical Reverse

50 IFM = 20 A
IFM = 30 A
40 IFM = 10 A
0.10 IFM = 20 A
30
IFM = 10 A IFM = 5 A
20
0.05 IFM = 5 A
10
IFM = 1 A
IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C

0.5 100
20ETF.. Series
TJ = 150 °C 20ETF.. Series
0.4 80 TJ = 150 °C IFM = 30 A
Recovery Current (A)
Recovery Time (µs)
trr - Typical Reverse

Irr - Typical Reverse

IFM = 30 A
IFM = 20 A IFM = 20 A
0.3 60
IFM = 10 A
IFM = 5 A IFM = 10 A

0.2 IFM = 1 A 40 IFM = 5 A

0.1 20 IFM = 1 A

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C

Revision: 29-Nov-2021 4 Document Number: 96213


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF...-M3 Series
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Vishay Semiconductors

4.0 10
IFM = 30 A 20ETF.. Series
20ETF.. Series 9
3.5 TJ = 150 °C
TJ = 25 °C IFM = 30 A
8

Recovery Charge (µC)


Recovery Charge (µC)

Qrr - Typical Reverse


Qrr - Typical Reverse

3.0
IFM = 20 A 7
2.5 6 IFM = 20 A

2.0 5
IFM = 10 A
1.5 4 IFM = 10 A
3
1.0
IFM = 5 A 2 IFM = 5 A
0.5 1
IFM = 1 A IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C


ZthJC - Transient Thermal Impedance (K/W)

10
Steady state value
(DC operation)

D = 0.50
D = 0.33
0.1
Single pulse D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Fig. 14 - Thermal Impedance ZthJC Characteristics

Revision: 29-Nov-2021 5 Document Number: 96213


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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF...-M3 Series
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ORDERING INFORMATION TABLE

Device code VS- 20 E T F 06 -M3

1 2 3 4 5 6 7

1 - Vishay Semiconductors product


2 - Current rating (20 = 20 A)
3 - Circuit configuration:
E = single
4 - Package:
T = 2L TO-220AC
5 - Type of silicon:
F = fast soft recovery rectifier 02 = 200 V
6 - Voltage code x 100 = VRRM 04 = 400 V
06 = 600 V
7 - Environmental digit
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)


PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION
VS-20ETF02-M3 50 Antistatic plastic tube
VS-20ETF04-M3 50 Antistatic plastic tube
VS-20ETF06-M3 50 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?96156
Part marking information www.vishay.com/doc?95391

Revision: 29-Nov-2021 6 Document Number: 96213


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-220AC 2L
DIMENSIONS in millimeters and inches

A
(6) 0.014 M B A M
Thermal pad
E A (E)
A1
B
Q ØP (6) A D D
H1 (H1) L1 (2)
C C
D2 (6)
(6) D c

D1 2xb 2 x b2

Detail B
Detail B
A2

L
E1 (6)
C Base metal (b, b2) Plating
A

c c1 (4)
2x e View A - A
e1 (4)
b1, b3
0.015 M B A M Section C - C and D - D

Lead tip
Conforms to JEDEC® outline TO-220AC

MILLIMETERS INCHES MILLIMETERS INCHES


SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 D2 11.68 13.30 0.460 0.524 6, 7
A1 1.14 1.40 0.045 0.055 E 10.11 10.51 0.398 0.414 3, 6
A2 2.50 2.92 0.098 0.115 E1 6.86 8.89 0.270 0.350 6
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 ØP 3.54 3.91 0.139 0.154
D 14.85 15.35 0.585 0.604 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2

Revision: 22-Feb-2024 1 Document Number: 96156


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jul-2024 1 Document Number: 91000

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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