CHAPTER 4 (I) : Field Effect Transistor (FET)

CHAPTER 4(i)
FIELD EFFECT TRANSISTOR

(FET)
1
FET
FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction
Transistors).
Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits
Differences:
• FETs are voltage controlled devices whereas BJTs are current
controlled devices.
• FETs also have a higher input impedance, but BJTs have higher
gains.
• FETs are less sensitive to temperature variations and because of
their construction they are more easily integrated on ICs.
• FETs are also generally more static sensitive than BJTs.
2
FET Types
JFET MOSFET VMOS MESFET
n-channel Depletion-type (DE-MOSFET)

p-channel n-channel
p-channel
Enhancemnet-type (E-MOSFET)
n-channel
p-channel
3
JFET Construction
There are two types of JFETs
•n-channel
•p-channel
The n-channel is more widely used.
There are three terminals.
•Drain (D) and source (S) are connected to the n-channel

•Gate (G) is connected to the p-type material
4
Basic Operation of a JFET
JFET operation can be compared to a water spigot.
The source of water pressure

is the accumulation of
electrons at the negative pole
of the drain-source voltage.
The drain of water is the

electron deficiency (or holes)
at the positive pole of the
applied voltage.
The control of flow of water

is the gate voltage that
controls the width of the n-
channel and, therefore, the
flow of charges from source
to drain.
5
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
• VGS = 0, VDS increasing to some positive value

• VGS < 0, VDS at some positive value
• Voltage-controlled resistor
6
VGS = 0, VDS increasing to some positive value
Three things happen when VGS = 0 and VDS is increased from 0 to a more
positive voltage
• The depletion region between p-gate

and n-channel increases as
electrons from n-channel combine
with holes from p-gate.
• Increasing the depletion region,

decreases the size of the n-channel
which increases the resistance of
the n-channel.
• Even though the n-channel

resistance is increasing, the current
(ID) from source to drain through
the n-channel is increasing. This is
because VDS is increasing.
7
VGS = 0, VDS increasing to some positive value: Pinch Off
If VGS = 0 and VDS is further

increased to a more positive voltage,
then the depletion zone gets so large
that it pinches off the n-channel.
This suggests that the current in

the n-channel (ID) would drop to 0A,
but it does just the opposite–as VDS
increases, so does ID.
8
VGS = 0, VDS increasing to some positive value: Saturation
At the pinch-off point:
• Any further increase in VGS does

not produce any increase in ID.
VGS at pinch-off is denoted as
V p.
• ID is at saturation or maximum.
It is referred to as IDSS.
• The ohmic value of the channel

is maximum.
9
VGS < 0, VDS at some positive value
As VGS becomes more negative,

the depletion region increases.
10
VGS < 0, VDS at some positive value: ID < IDSS
As VGS becomes more negative:
• The JFET experiences

pinch-off at a lower voltage
(Vp).
• ID decreases (ID < IDSS) even

though VDS is increased.
• Eventually ID reaches 0A.

VGS at this point is called Vp
or VGS(off).
Also note that at high levels of VDS the JFET reaches a breakdown
situation. ID increases uncontrollably if VDS > VDSmax. 11
Voltage-Controlled Resistor
The region to the left of the

pinch-off point is called the
ohmic region.
The JFET can be used as a

variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS
becomes more negative, the
resistance (rd) increases.
ro
rd 
2
 V 
 1  GS 
 VP 
12
p-Channel JFETS
The p-channel JFET behaves

the same as the n-channel
JFET, except the polarities
and currents are reversed.
13
p-Channel JFET Characteristics
As VGS increases more

positively
• The depletion zone

increases
• ID decreases (ID < IDSS)
• Eventually ID = 0A
Also note that at high levels of VDS the JFET reaches a breakdown
situation—ID increases uncontrollably if VDS > VDSmax.
14
JFET Symbols
n-channel p-channel
15
JFET Transfer Characteristics
 The transfer characteristic of input-to-output is not as
straightforward in a JFET as it is in a BJT.
In a BJT,  indicates the relationship between IB (input) and IC

(output).
In a JFET, the relationship of VGS (input) and ID (output) is a

little more complicated:
2
 V 
I D  I DSS  1  GS 

 VP
 
16
JFET Transfer Curve
This graph shows the value of ID for a given value of VGS.
17
MOSFETs
(Metal Oxide Semiconductor FET)
MOSFETs have characteristics similar to JFETs and additional

characteristics that make them very useful.
There are two types of MOSFETs:
• Depletion-Type
• Enhancement-Type
18
MOSFETs Symbols
Depletion-type Enhancement-type
19
Depletion-Type MOSFET Construction
The drain (D) and source (S)

connect to the to n-doped regions.
These n-doped regions are
connected via an n-channel. This
n-channel is connected to the
gate (G) via a thin insulating layer
of SiO2.
The n-doped material lies on a p-

doped substrate that may have an
additional terminal connection
called substrate (SS).
20
Basic MOSFET Operation
A depletion-type MOSFET can operate in two modes:
• Depletion mode
• Enhancement mode
21
Operation Modes in Depletion-type
Depletion Mode Enhancement Mode
The characteristics are

similar to a JFET. • VGS > 0V
• ID increases above IDSS
• The formula used to plot the
• When VGS = 0V, ID = IDSS
transfer curve still applies:
• When VGS < 0V, ID < IDSS
• The formula used to plot the
transfer curve still applies:
I D  k (VGS  VT ) 2
2
 VGS 

I D  I DSS  1   Note that VGS is now a positive
 VP  polarity
22
Basic Operation of D-MOSFET
n-Channel depletion-type MOSFET with Reduction in free carriers in a

VGS = 0 V and applied voltage VDD. channel due to a negative
potential at the gate terminal.
23
Enhancement-Type MOSFET Construction
• The drain (D) and source (S)

connect to the to n-doped regions.
These n-doped regions are
connected via an n-channel
• The gate (G) connects to the p-

doped substrate via a thin
insulating layer of SiO2
• There is no channel
• The n-doped material lies on a p-

doped substrate that may have
an additional terminal connection
called the substrate (SS)
24
Basic Operation of the Enhancement-Type
MOSFET
The enhancement-type MOSFET only operates in the enhancement mode.
• VGS is always positive
• As VGS increases, ID increases
• As VGS is kept constant and VDS is increased, then ID saturates
(IDSS) and the saturation level, VDSsat is reached
25
Basic Operation
Channel formation in the n-channel Change in channel and depletion

enhancement-type MOSFET. region with increasing level of VDS
for a fixed value of VGS.
26
Enhancement-Type MOSFET Transfer characteristic
To determine ID given VGS:
I D  k (VGS  VT ) 2
Where:
VT = threshold voltage or voltage at which the MOSFET turns on
k = constant found in the specification sheet
k can also be determined by using values at I D(ON)

a specific point and the formula: k
(VGS(ON)  VT ) 2
VDSsat can be calculated by:
VDSsat  VGS  VT
27

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CHAPTER 4(i)

FIELD EFFECT TRANSISTOR

JFET MOSFET VMOS MESFET

n-channel Depletion-type (DE-MOSFET)

There are two types of JFETs

The n-channel is more widely used.

There are three terminals.

•Drain (D) and source (S) are connected to the n-channel

The source of water pressure

The drain of water is the

The control of flow of water

There are three basic operating conditions for a JFET:

• VGS = 0, VDS increasing to some positive value

• The depletion region between p-gate

• Increasing the depletion region,

• Even though the n-channel

If VGS = 0 and VDS is further

This suggests that the current in

At the pinch-off point:

• Any further increase in VGS does

• The ohmic value of the channel

As VGS becomes more negative,

As VGS becomes more negative:

• The JFET experiences

• ID decreases (ID < IDSS) even

• Eventually ID reaches 0A.

The region to the left of the

The JFET can be used as a

The p-channel JFET behaves

As VGS increases more

• The depletion zone

In a BJT,  indicates the relationship between IB (input) and IC

In a JFET, the relationship of VGS (input) and ID (output) is a

MOSFETs have characteristics similar to JFETs and additional

There are two types of MOSFETs:

The drain (D) and source (S)

The n-doped material lies on a p-

Depletion Mode Enhancement Mode

The characteristics are

n-Channel depletion-type MOSFET with Reduction in free carriers in a

• The drain (D) and source (S)

• The gate (G) connects to the p-

• The n-doped material lies on a p-

Channel formation in the n-channel Change in channel and depletion

To determine ID given VGS:

k can also be determined by using values at I D(ON)

VDSsat can be calculated by:

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