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    Basic Ele Module-2

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    Rachana Medehal
    This module discusses field effect transistors (FETs) including junction field effect transistors (JFETs) and metal-oxide semiconductor field effect transistors (MOSFETs), as well as silicon controlled rectifiers (SCRs). It covers the construction, operation, characteristics, and applications of N-channel and P-channel JFETs, depletion and enhancement type MOSFETs, and SCRs. The goals are for students to understand how these devices work and analyze their characteristics and parameters.

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    Download as PPTX, PDF, TXT or read online from Scribd

    Basic Ele Module-2

    Uploaded by

    Rachana Medehal
    22 views21 pages
    This module discusses field effect transistors (FETs) including junction field effect transistors (JFETs) and metal-oxide semiconductor field effect transistors (MOSFETs), as well as silicon controlled rectifiers (SCRs). It covers the construction, operation, characteristics, and applications of N-channel and P-channel JFETs, depletion and enhancement type MOSFETs, and SCRs. The goals are for students to understand how these devices work and analyze their characteristics and parameters.

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    This module discusses field effect transistors (FETs) including junction field effect transistors (JFETs) and metal-oxide semiconductor field effect transistors (MOSFETs), as well as silicon controlled rectifiers (SCRs). It covers the construction, operation, characteristics, and applications of N-channel and P-channel JFETs, depletion and enhancement type MOSFETs, and SCRs. The goals are for students to understand how these devices work and analyze their characteristics and parameters.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    22 views21 pages

    Basic Ele Module-2

    Uploaded by

    Rachana Medehal
    This module discusses field effect transistors (FETs) including junction field effect transistors (JFETs) and metal-oxide semiconductor field effect transistors (MOSFETs), as well as silicon controlled rectifiers (SCRs). It covers the construction, operation, characteristics, and applications of N-channel and P-channel JFETs, depletion and enhancement type MOSFETs, and SCRs. The goals are for students to understand how these devices work and analyze their characteristics and parameters.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 21

    Module 2

    FET and SCR

    Syllabus
    FET and SCR: Introduction, JFET: Construction and operation, JFET
    Drain Characteristics and Parameters, JFET Transfer Characteristics
    Square law expression for ID, Input resistance
    MOSFET: Depletion and Enhancement type MOSFET- Construction,
    Operation, Characteristics and Symbols, CMOS, Silicon Controlled
    Rectifier (SCR) – Two-transistor model, Switching action, Characteristics,
    Phase control application

    TEXT1: D P Kothari, I J Nagrath, “Basic Electronics”, 2nd edition,


    Mc Graw Hill, 2008(3.4 to 3.4.5, 4.5)
    TEXT2:Thomas L Floyd, “Electronic devices”, Pearson Education,
    9th edition, 2012 (7.1,7.2,7.4,7.5)
    Course Outcomes-Module 2

    At the end of this module the student would be able


    to:
    Understand the working of JFET
    Analyse the JFET characteristics and define parameters
    Explain the operation of MOSFETs
    Analyse MOSFET characteristics and define parameters
    Analyse CMOS devices and their applications
    Understand the working of SCR and its characteristics
    Describe applications of SCR with focus on Phase control
    Transistor

    Transistor is a semiconductor device that can


    amplify or switch electrical signals
    Transistor is made up of semiconductor material
    usually with three terminals for connection with
    external circuit
    Field effect Transistor

    • FET is three terminal device: Drain, Source and Gate


    • FETs are unipolar devices because, they operate only with one
    type of charge carrier.
    Field effect Transistor

    • The term field-effect relates to the formation of channel


    due electric field created as a result of a voltage applied
    on one of its terminals (gate)
    • It is a voltage-controlled device, where the voltage
    between two of the terminals (gate and source) controls
    the current through the device.

    • There are two types of JFET


    i) N channel JFET
    ii)P channel JFET
    N-Channel JFET

    Construction : N channel JFET

    Symbol of N channel JFET

    Figure 2.1 Basic structure of N channel JFET


    N-Channel JFET

    Operation : N channel JFET


    N-Channel JFET
    Operation : N channel JFET
    1. When Vgs = 0 & Vds=0

    • When Vgs=0V and Vds=0V, Depletion


    region is created at the PN junction.
    The depletion region thickness is same
    and are symmetrical

    2. When Vgs=0V and Vds=+ve (variable)


    Electrons start moving from Source to
    drain and Id flows from Drain to Source
    • Points closer to drain are at higher positive potential relative to ground than
    point close to source. Both depletion regions are therefore subjected to greater
    reverse voltage near drain. Therefore depletion region extends more towards
    near the drain.
    • Drain current Id varies with Vds, keeping Vgs=0V
    N-channel JFET

    Idss is max current


    with Vgs=0V and
    Vds>Vp

    Saturation Region

    Vb

    Figure 2.3: Plot of Vds Vs Id with Vgs=0 V


    N-channel JFET

    Operation : N channel JFET


    3. When Vgs<0 and Vds>0 (both variable)

    Figure 2.3 N Channel JFET with both Figure 2.4 Family of curves of Id vs
    Vgs and Vds variable Vds for different Vgs
    • Pinch off occurs at a lower value of Vds when Vgs is increased to more negative.
    N-channel JFET

    Summary of JFET operation

    1. When Vgs = 0V and Vds=0V

    2. When Vgs=0V and Vds=+ve (variable)

    3 . When Vgs<0V and Vds>0V (both variable)


    N-channel JFET
    Characteristics of N channel JFET

    There are two types of characteristics


    a)Drain characteristics: Plot of Vds Vs Id keeping Vgs constant as shown in figure 2.5
    The various regions in the drain characteristics are:

    i)Cut off region

    ii)Ohmic region

    iii)Pinch off/Saturation Region

    iv)Breakdown Region
    N-channel JFET

    b)Transfer characteristics: Plot of Vgs Vs Id keeping Vds constant as shown in


    figure 2.6
    N channel JFET

    Square Law Expression for Id: The transfer characteristics of a JFET ca be


    expressed as

    Equation 2.1 is square law expression for Id


    In terms of pinch off voltage equation 2.1 can be written as

    In equation 2.2 Vp is value of Vds at which drain current Id becomes constant i.e
    Id=Idss when Vgs=0v

    In equation 2.1, Vgs(off) is the value of vgs at which drain current Id becomes zero
    for given Vds
    N channel JFET

    Square Law Expression for Id:

    Equation 2.2 can be expressed as

    Input Resistance:

    IGSS is gate reverse current


    Problems
    Problems
    P-Channel JFET
    P-Channel JFET

    Operation : The basic operation of a p-channel JFET is same as for an n-channel


    JFET except for

    i)Vgs is positive

    ii)Vds is negative

    iii)Vp is positive

    iv)Id is due to holes


    P-Channel JFET
    Charateristics of p-channel JFET

    a)Drain characteristics: Plot of Vds Vs Id keeping Vgs constant as shown in figure 2.8
    Note that Vds is negative and Vgs is positive
    P-Channel JFET
    b)Transfer characteristics: Plot of Vgs Vs Id keeping Vds constant as shown in
    figure 2.9

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