Basic Ele Module-2
Basic Ele Module-2
Basic Ele Module-2
Syllabus
FET and SCR: Introduction, JFET: Construction and operation, JFET
Drain Characteristics and Parameters, JFET Transfer Characteristics
Square law expression for ID, Input resistance
MOSFET: Depletion and Enhancement type MOSFET- Construction,
Operation, Characteristics and Symbols, CMOS, Silicon Controlled
Rectifier (SCR) – Two-transistor model, Switching action, Characteristics,
Phase control application
Saturation Region
Vb
Figure 2.3 N Channel JFET with both Figure 2.4 Family of curves of Id vs
Vgs and Vds variable Vds for different Vgs
• Pinch off occurs at a lower value of Vds when Vgs is increased to more negative.
N-channel JFET
ii)Ohmic region
iv)Breakdown Region
N-channel JFET
In equation 2.2 Vp is value of Vds at which drain current Id becomes constant i.e
Id=Idss when Vgs=0v
In equation 2.1, Vgs(off) is the value of vgs at which drain current Id becomes zero
for given Vds
N channel JFET
Input Resistance:
i)Vgs is positive
ii)Vds is negative
iii)Vp is positive
a)Drain characteristics: Plot of Vds Vs Id keeping Vgs constant as shown in figure 2.8
Note that Vds is negative and Vgs is positive
P-Channel JFET
b)Transfer characteristics: Plot of Vgs Vs Id keeping Vds constant as shown in
figure 2.9