Vlsi 1
Vlsi 1
Vlsi 1
MOS TRANSISTOR
1
MOS Capacitor Structure
MOS capacitor • Most MOS devices today employ:
(cross-sectional view) o degenerately doped polycrystalline
Si (“poly-Si”) as the “metallic” gate-
electrode material
GATE - n+-type for “n-channel” transistors
- p+-type, for “p-channel” transistors
+
VG _ o SiO2 as the gate dielectric
Semiconductor
- band gap = 9 eV
- er,SiO2 = 3.9e0
o Si as the semiconductor material
- p-type, for “n-channel” transistors
- n-type, for “p-channel” transistors
Bulk Semiconductor Potential, fF
• p-type Si: Ec
qfF
Ei
EF
Ev
• n-type Si:
Ec
EF |qfF|
Ei
Ev
Work Function
Depletion
Electrons depleted from
surface
Inversion
Surface inverted to p-type
Physical structure of the enhancement-type NMOS transistor
6
MOS Transistors -
Types and Symbols
D D
G G
S S
G G B
S S
8
The Body Effect
L = 0.1 to 3 m cross-section.
Typically, W = 0.2 to 100 m, and the
thickness of the oxide layer (tox) is in
the range of 2 to 50 nm.
10
Creating a Channel for Current Flow
12
The iD–vDS characteristics of the MOSFET when the voltage applied
between drain and source, vDS, is kept small. The device operates
as a linear resistor whose value is controlled by vGS.
13
Operation as VDS Is Increased
S
VGS VDS Electrtric field E(x) causes the
G
D
ID
electron charge dq to drift toward
n+ –
V(x)
+ n+ the drain with a velocity dx/dt
dx
= -n E(x) = n dv(x)
L x
p-substrate
dt dx
i = dq/dt = dq dx
B
iD = (nCox)
W [ (V - Vt)VDS – 1/2 V2DS
L
GS
1 W
i D n C ox v GS V t
2 VDS > VGS - VT
G
2 L S
D
- +
n+ VGS - VT n+
17
nCox is a constant determined by the process technology
used to fabricate the n-channel MOSFET. It is known as
the process transconductance parameter.
Denoted k'n and has the dimensions of A/V2
k'n = nCox
Aspect Ratio of the MOSFET
(Triode region)
(Saturation region)
18
Current-Voltage Relation
-4
x 10
6
VGS= 2.5 V
Resistive Saturation
4
VGS= 2.0 V
Quadratic
ID (A)
3
VDS = VGS - VT Relationship
2
VGS= 1.5 V
1
VGS= 1.0 V
0
0 0.5 1 1.5 2 2.5
VDS (V)
Current-Voltage Relations
Long-Channel Device
A model for manual analysis
Current-Voltage Relations:
Deep-Submicron FET
-4
x 10
2.5
VGS= 2.5 V
Early Saturation
2
VGS= 2.0 V
1.5
ID (A)
Linear
1
VGS= 1.5 V Relationship
0
0 0.5 1 1.5 2 2.5
VDS (V)
Channel length modulation
23
Velocity Saturation
u n ( m /s)
usat = 105
Constant velocity
xc = 1.5 x (V/µm
Velocity Saturation
ID
Long-channel device
V =V
GS DD
Short-channel device
V V -V
DSAT GS T V DS
ID versus VGS
-4
-4
x 10 x 10
6 2.5
5
2
4 linear
quadratic 1.5
I D (A)
ID (A)
3
1
2
0.5
1
quadratic
0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
VGS(V) VGS(V)
-4 -4
x 10 x 10
6 2.5
VGS= 2.5 V
VGS= 2.5 V
5
2
Resistive Saturation
4 VGS= 2.0 V
VGS= 2.0 V 1.5
ID (A)
ID (A)
3
VDS = VGS - VT 1 VGS= 1.5 V
2
VGS= 1.5 V
0.5 VGS= 1.0 V
1
VGS= 1.0 V
0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
VDS(V) VDS(V)
S D
B
Simple Model versus SPICE
-4
x 10
2.5
VDS=VDSAT
2
Velocity
1.5
Saturated
ID (A)
Linear
1
VDSAT=VGT
0.5
VDS=VGT
Saturated
0
0 0.5 1 1.5 2 2.5
VDS (V)
Subthreshold conduction
-0.2
VGS = -1.5V
-0.4
ID (A)
VGS = -2.0V
-0.6
-1
-2.5 -2 -1.5 -1 -0.5 0
VDS (V)
Transistor Model
for Manual Analysis
The Transistor as a Switch
VGS V T
Ron ID
V GS = VD D
S D
Rmid
R0
V DS
VDD/2 VDD
The Transistor as a Switch
5
x 10
7
5
Req (Ohm)
0
0.5 1 1.5 2 2.5
VDD (V)
The Transistor as a Switch