ECE 211 Digital Electronics Unit 4
ECE 211 Digital Electronics Unit 4
UNIT - IV
Memory Devices
Truth Table
A B F1 F2 F3 F4
0 0 1 0 1 0
0 1 1 1 1 1
1 0 0 1 1 1
1 1 0 1 0 0
Fuse map
Address Data
0 A
1 F
2 7
03/11/2023 3 4 Fall 2020 - ECE 211 Digital Electronics 9
PLA Implementation
NOT, OR, NAND, XOR
A B F1 F2 F3 F4
0 0 1 0 1 0
0 1 1 1 1 1
1 0 0 1 1 1
1 1 0 1 0 0
10
A B F1 F2 F3 F4
0 0 1 0 1 0
0 1 1 1 1 1
1 0 0 1 1 1
1 1 0 1 0 0
• SRAM is easier to use and has shorter read and write cycles.
• Low density, low capacity, high cost, high speed, high power
consumption.