ECEG 2131 AEI Lec - 06 - BJT

ECEG-2131 Applied Electronics I
Addis Ababa Institute of Technology (AAIT) School of Electrical and

Computer Engineering
Learning Outcomes
 At the end of the lecture, students should be

able to know about:
 Introduction to 3 terminals device – BJT.
 Construction, Characteristics, Operation and
different Configurations of BJT.
 Limits of Operation.
 BJT Specification Sheet.
2
AAIT, School of Electrical
and Computer Engineering
Bipolar Junction Transistors
What is the importance of BJT?
 Introduction on devices of three-terminal
(BJT), basically constructed from the basic
semiconductor device, namely diode.
 Used in many applications, ranging from
signal amplification to the design of digital
logic and memory circuits.
 The basic principle is the use of voltage
between two terminals to control the current
flowing in the third terminal.
3
Transistor Construction
E P N P C E N P N C
B B
PNP transistor NPN transistor

 A 3 terminal device, (E) Emitter, (B) Base, (C) Collector.
 2 types, PNP and NPN.
 Bipolar  è and holes participate in the injection process.
 E  Heavily doped, B  lightly doped, C  only lightly
doped.
 Consists of 2 pn junction, Emitter-Base junction (EBJ) and
Collector-base junction (CBJ).
4
Transistor Operation
 (Holes/è Flow): PNP  Holes, NPN  è
 E.g: PNP Transistor. (Similar for NPN, replace the
role of holes with electrons.)
 FB junction is E-B (emitter-base junction)
 Thin depletion region. Majority carriers flow
(holes)
 Heavy majority carrier flow P N P
from P to N.
FB ThinDepletion
region
VEE
5
Minority carriers flow
(holes)
P N P
Thick Depletion RB
region
VC C
 RB junction is BC (base-collector).
 Thick depletion region.
 Minority carrier flow from N to P.
6
 Majority carriers diffuse from p to n. Some holes combine

with electrons in n-side but most holes managed to cross
over into p-side. Some holes flow out from the base due
to low conductivity in n-side.
ICO leakage
I E  I C  I B I C  I Cmaj  I CO min current
7
Transistor Symbol
 In both symbols the emitter is distinguished by an

arrowhead.
 This arrowhead points in the direction of normal current
flow in the emitter, which is also the forward direction of
the base–emitter junction.
8
Transistor Symbol
9
Transistor Configuration
Three configurations
 Common-Base
 Common-Emitter
 Common-Collector
10
Transistor Symbol
Common-Base Configuration
PNP NPN
 ICO normally small and can be neglected.

 What is ICO again?
11
E C E C
NPN
IE IC IE IC
B B
IB IB
PNP
V EE VCC VEE VCC
12
 Can obtain 2 sets of characteristics using CB configuration.
A) Input Characteristic
 Relates an input current, IE
to input voltage, VBE.
 At certain VBE, IE will
vary depending on VCB.
13
B) Output Characteristic
 Relates an Output current,
IC to Output voltage, VCB.
 At certain VCB, IC will vary
depending on IE.
 Has 3 common
regions/modes:
® Active
® Cutoff
® Saturation
 Different modes depend

on the bias condition of
each junctions.
14
BJT Modes of Operation
Mode EBJ CBJ

Cutoff Reverse Reverse
Active Forward Reverse

(forward)
Reverse Reverse Forward
Active
Saturation Forward Forward
15
Application in linear amplifiers
Achieved by shown biasing arrangement b4
 Active region:
 The effect of VCB can be neglected.
IC  IE , whatever value of VCB.
 BE junction forward-biased, CB junction is RB.
 ICO or ICBO can be neglected (too small effect).
 Cutoff region:
 Application in Switching circuit.
 IC = 0A when IE=0A.
 BE and CB junctions are reverse-biased.
 Saturation region:
 Defined as the region left of VCB = 0V.
 BE and CB junctions are forward-biased.
16
 Develop equivalent model for the BE region.

 When the transistor is “on”, or in active state.
Ie (mA)
VCB=20V
VCB=10V
5
VCB=1V
VBE  0.7V
4
3 For Ie > 0mA

2
V BE (V)
0.2 0.4 0.6 0.8 1.0
17
Alpha(), Common-Base Current Gain
In DC Mode:
® Relation between the level of IC and IE.
® Ideally  = 1, practically between 0.90 to 0.998.
IC I C  I Cmaj  I CO min
 dc  and
IE I C  I C  I CBO
Finally, I C   I E  ICBO  Normally ICBO can be neglected
In AC Mode:
® Common-base, short-circuit, amplification factor.
I C
 ac 
I E VCB  constant  Normally, dc  ac
18
Common-Emitter
IC IC
PNP NPN
C C
B B V CC
VBB IB V CC VBB IB
E E
IE IE
19
Common-Emitter Configuration
 The most frequently used.
 Can still use, I E  IC  I B and IC   I E
 2 sets of characteristics
using CE configuration.
A) Input Characteristic
 Relate input current, IB to
input voltage, VBE.
 At certain VBE, IB will vary
depending on VCE (for Si).
20
B) Output Characteristic
 Relate Output current, IC
to Output voltage, VCE.
 At certain VCE, IC will vary
depending on IB.
 VCE has influence on IC.
(curve IB not horizontal)
 Has 3 different regions:
 Active
 Cutoff
 Saturation
 Remember what they are!
21
 Active region:
 Application in Linear Amplifiers.
 Achieved by the biasing arrangement shown previously.
 BE junction forward-biased, CB junction is reverse-biased.
 Cutoff region:
 BE and CB junctions are reverse-biased.
 IC  0A when IB=0A.
 I B I CBO
I C  I C  I CBO IC  
1 1 I C  I CEO
I C   I E  ICBO
I CBO  at IB=0A
I C    I C  I B   I CBO I CEO 
1 IB 0 A
22
 Saturation region:
 Defined as the region left of VCEsat.
 BE and CB junctions are forward-biased. Similar to CB config
 Approx for the input set of characteristics.
 When the transistor is “on”, or in active state.
IB (uA) IB (uA)
VCE=1V
VBE  0.7V
VCE=10V
5 50
VCE=20V
4 40
3 30 For IB > 0A

2 20
1 10
0.7V
V BE(V) V BE(V)
0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0
23
Beta(), Common-Emitter Current Gain.
In DC Mode:
® Relation between the level of IC and IB.
® Typically between 50 to over 400.
IC
 dc  • Also known as hFE
IB
In AC Mode:
® common-emitter, forward-current, amplification factor.
I C
 ac  • Also known as hfe
I B VCE  constant
24
 Relation between Beta() and Alpha()
I IC
  C --- (1)  --- (2) I E  IC  I B --- (3)
IB IE
Substitute (1) and (2) into (3),
IC IC
 IC 
 
Dividing both side by IC, and rearranging the equation gives,
 
 --- (4)  --- (5)
1  1
25
I CBO 1
Also, I CEO  and deriving eqn 5 gives   1
1 IB 0 A 1
We will get, I CEO   I CBO --- (6)
From, IC   I B and I E  IC  I B
We will get, I E     1 I B --- (7)
 Has high input impedance and low output impedance.

 Used for impedance-matching.
 Can be designed using CE characteristics.
26
Common-Collector Configuration
PNP NPN
IE IE
E E
B V EE B V EE
IB IB
VBB C VBB C
IC IC
27
Common-Collector Configuration
 Has high input impedance and low output impedance.

 Used for impedance-matching.
 Can be designed using CE characteristics.
Output and Input Characteristics of

CC are the same for CE configuration
28
Limits of Operation
 To ensure maximum rating are not being exceeded.
 To avoid output signal distortion.
 Max collector current  continuous collector current (ds).
 Max collector-to-emitter voltage  VCEO or V(BR)CEO.(ds)
Example of a transistor referring to next figure:

I C max  50mA VCEO  20V VCEsat  0.3V
PC max  VCE I C  300mW Max Power dissipation
 Should operate below PCmax. Draw estimation curve.
29
Limits of Operation
30
Limits of Operation
At IC = ICmax = 50mA, At VCE = VCEmax = 20V,

VCEIC=300mW (20V)IC=300mW
VCE(50mA)=300mW IC=300mW/20V = 15mA
VCE=300mW/50mA =6V
 Range of operation I CEO  I C  I C max

VCEsat  VCE  VCE max
VCE I C  PC max
For common-base,
PC max  VCB I C
31
Transistor Specification Sheet
(sample) V V CE max CEO  30V
I C max  200mA
PC max  PD  625mW
VCEsat  0.3V
I CEO   I CBO  (150)(50nA)
I CEO  7.5A
Limits of Operation
7.5A  I C  200mA
0.3V  VCE  30V
VCE I C  625mW
32
What to Do This Week?
 Reading Assignment
 DC Biasing of BJT (Bipolar Junction Transistors).
33

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ECEG-2131 Applied Electronics I

Addis Ababa Institute of Technology (AAIT) School of Electrical and

 At the end of the lecture, students should be

PNP transistor NPN transistor

 Majority carriers diffuse from p to n. Some holes combine

 In both symbols the emitter is distinguished by an

 ICO normally small and can be neglected.

 Different modes depend

Mode EBJ CBJ

Active Forward Reverse

 Develop equivalent model for the BE region.

3 For Ie > 0mA

3 30 For IB > 0A

We will get, I CEO   I CBO --- (6)

We will get, I E     1 I B --- (7)

 Has high input impedance and low output impedance.

 Has high input impedance and low output impedance.

Output and Input Characteristics of

Example of a transistor referring to next figure:

PC max  VCE I C  300mW Max Power dissipation

 Should operate below PCmax. Draw estimation curve.

At IC = ICmax = 50mA, At VCE = VCEmax = 20V,

VCE(50mA)=300mW IC=300mW/20V = 15mA

 Range of operation I CEO  I C  I C max

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