Apacer Technology, a global leader in digital storage solutions, has announced the mass production of its latest industrial-grade DDR5-6400 CUDIMM and CSODIMM memory modules. These modules are the first to feature a fully lead-free resistor design, eliminating the need for exemptions under the EU RoHS directive. Equipped with premium professional-grade Clock Driver (CKD) components and Transient Voltage Suppressors (TVS) diode as dual-core technologies, the modules are specifically engineered for high-performance computing (HPC) and artificial intelligence (AI) applications. These products ensure exceptional stability and security even in extreme industrial environments, providing enterprises with reliable, eco-friendly, and high-performance solutions.

In alignment with the global push for sustainability, Apacer's fully lead-free DDR5 series has attracted significant customer interest, particularly for its compliance with the EU RoHS 7(c)-I lead exemption clause. By adopting this series early, customers can proactively mitigate risks associated with the expiration of exemption extensions. Now in mass production, these fully lead-free DDR5 CUDIMM and CSODIMM modules not only help customers meet international regulatory standards but also empower them to gain a competitive edge in the high-performance computing market.

With decades of expertise in building critical storage and memory for world-leading digital devices, Biwin will now bring its innovative and high-performance products to meet the evolving demands of today's digital consumers.

Biwin's featured products will be showcased at CES 2025 and available on Amazon JP in December 2024, followed by Amazon UK in January 2025, and will roll out to key markets in APAC, Latin America and India with the start of 2025.

Nanya Technology's Board of Directors today has approved a strategic partnership with PieceMakers Technology, Inc. ("PieceMakers") to jointly develop customized ultra-high-bandwidth memory solutions. As part of the collaboration, Nanya Technology will subscribe to a cash capital increase of up to NT$ 660 million, purchasing up to 22 million common shares at NT$ 30 per share in PieceMakers. Upon completion of the capital increase, Nanya Technology is expected to acquire up to approximately 38% stakes of PieceMakers.

To meet the growing demand for high-performance memory driven by AI and edge computing, this collaboration will combine Nanya Technology's 10 nm-class DRAM innovation with PieceMakers' expertise in customized DRAM design to develop high-value, high-performance, and low-power customized ultra-high-bandwidth memory solutions, unlocking new opportunities in AI and high-performance computing markets.

Sandisk Corporation today previewed its new corporate branding and creative direction, signaling a bold debut of the company's comeback launch as a standalone Flash and memory technology innovator, planned for early 2025.

Defined by a 'Mindset of Motion', Sandisk's new creative direction represents a future forward philosophy where by creating paths and possibilities for people to go without limits, the company unites the current moment and their aspirations. This mindset brings people closer to their ambitions and creates a circle of collaboration for progress and future growth.

Lexar late last week introduced the ARES DDR5-6000 CL26 memory kit. The kit is optimized for AMD Ryzen platforms, such as the recently launched Ryzen 7 9800X3D. It comes with an AMD EXPO profile for DDR5-6000 and tight timings, including a CAS latency of 26, or 55 ns. It also includes an Intel XMP 3.0 profile that enables the same timings. Typical DDR5-6000 kits tend to come with a CL of 30. Under the hood, the kit uses SK Hynix A-die DRAM chips, and a 10-layer PCB. The module features thermal pads for not just the DRAM chips, but also the PMIC. These transfer heat to a 1.8 mm-thick aluminium heatspreader that's crowned by a silicone diffuser for the module's lighting setup that consists of eight ARGB LEDs, with 13 lighting presets. The module comes in two color options—silver and black. The company didn't reveal pricing or availability information.

This week, at the 2024 IEEE International Electron Devices Meeting (IEDM), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, proposes a novel 3D integrated charge-coupled device (CCD) that can operate as a block-addressable buffer memory, in support of data-intensive compute applications. Memory operation is demonstrated on a planar proof-of-concept CCD structure which can store 142 bits. Implementing an oxide semiconductor channel material (such as IGZO) ensures sufficiently long retention time and enables 3D integration in a cost-efficient, 3D NAND-like architecture. Imec expects the 3D CCD memory density to scale far beyond the DRAM limit.

The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement DRAM in data-intensive compute applications like AI and ML. One example is the CXL type-3 buffer memory, envisioned as an off-chip pool of memories that 'feeds' the various processor cores with large data blocks via a high-bandwidth CXL switch. This class of memories meets different specifications than byte-addressable DRAM, which increasingly struggles to maintain the cost-per-bit-trend scaling line.

BIOSTAR, a leading manufacturer of motherboards, graphics cards, IPC solutions, and storage devices, introduces the Storming V 16 GB / 8 GB DDR4 memory ideal for budget-friendly, casual home entertainment systems.

The Storming V DDR4 memory is an excellent choice for modern home entertainment systems, combining outstanding performance with affordability. Designed for casual entertainment and gaming, it delivers exceptional speed and stability, handling popular mid-range titles effortlessly to provide smooth gameplay and rapid data transfer rates. With a strong emphasis on practicality and performance, the Storming V DDR4 is the smart choice to elevate your everyday computing and entertainment experience.

Global sales of total semiconductor manufacturing equipment by original equipment manufacturers (OEMs) are forecast to set a new industry record, reaching $113 billion in 2024, growing 6.5% year-on-year, SEMI announced today in its Year-End Total Semiconductor Equipment Forecast - OEM Perspective at SEMICON Japan 2024. Semiconductor manufacturing equipment growth is expected to continue in the following years, reaching new records of $121 billion in 2025 and $139 billion in 2026, supported by both the front-end and back-end segments.

"Three consecutive years of projected growth in investments in semiconductor manufacturing reflect the vital role our industry plays in underpinning the global economy and advancing technology innovation," said Ajit Manocha, SEMI president and CEO. "Since our July 2024 forecast, the outlook for 2024 semiconductor equipment sales has brightened, especially with stronger-than-expected investments from China and in AI-related sectors. Together with our forecast extension through 2026, it highlights the robust growth drivers across segments, applications, and regions."

The CXL Consortium, an industry standard body advancing coherent connectivity, announces the release of its Compute Express Link (CXL) 3.2 Specification. The 3.2 Specification optimizes CXL Memory Device monitoring and management, enhances functionality of CXL Memory Devices for OS and Applications, and extends security with the Trusted Security Protocol (TSP).

"We are excited to announce the release of the CXL 3.2 Specification to advance the CXL ecosystem by providing enhancements to security, compliance, and functionality of CXL Memory Devices," said Larrie Carr, CXL Consortium President. "The Consortium continues to develop an open, coherent interconnect and enable an interoperable ecosystem for heterogeneous memory and computing solutions."

Samsung Electronics and SK hynix are working together to standardize "Low Power Double Data Rate 6 (LPDDR6) - Processing in Memory (PIM)" technology according to a report from Business Korea. This collaboration seeks to accelerate the development of low power memory products. The cooperation is still in its early stage, the companies initial work is focused on registering the standard with the Joint Electron and Device Engineering Council (JEDEC). Discussions are underway to determine technical requirements, specific characteristics of LPDDR with PIM, such as "internal bandwidth"—the data transfer rate within the memory, unlike the "external bandwidth" between the processor and memory in traditional systems. According to a Samsung Electronics representative, the two companies are in the process of developing a timeline for standardization.

This partnership is notable given how Samsung and SK hynix compete in the high-bandwidth memory (HBM) market. SK hynix beat Samsung in profits reporting 7.3 trillion won in the third quarter, while Samsung made 3.86 trillion won. However, the rise of AI with its increased demand for more memory has shaken up the scene pushing for teamwork instead of wasting resources in developing completely different and unstandardized products. Both firms see PIM technology as a way to grow, previous attempts to independently develop PIM products include Samsung's HBM and LPDDR5-PIM and SK hynix's GDDR6-PIM.

Samsung Electronics today announced new leadership for the next phase of the Company's growth and to strengthen its future competitiveness, focusing on the semiconductor business.

Young Hyun Jun, Vice Chairman and Head of Device Solutions (DS) Division, was named CEO and will also become the Head of Memory Business and Samsung Advanced Institute of Technology. Jinman Han was promoted to President and will become the Head of Foundry Business, while Seok Woo Nam will become Chief Technology Officer of Foundry Business, a newly-created position.

Patriot, a global leader in high-performance memory and storage solutions, has shattered performance records once again. The company's flagship DDR5 memory, Viper Xtreme 5, powered renowned overclocking expert Snakeeyes to achieve a groundbreaking global memory frequency world record on the HWBOT platform: an astonishing 6305.8 MHz (12,611.6 MT/s).

Snakeeyes not only set the frequency record but also claimed multiple top accolades on the HWBOT platform, including:

• First Place in the World Record Rankings
• First Place in the DDR5 SDRAM Rankings
• First Place in the Global Team Rankings
• First Place in the DDR5 SDRAM Team Rankings

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today announced that it has delivered the industry's first complete memory interface chipset solutions for the second-generation DDR5 Multi-Capacity Rank Dual In-Line Memory Modules (MRDIMMs).

The new DDR5 MRDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance Compute (HPC) and other data center applications. They deliver operating speeds up to 12,800 Mega Transfers Per Second (MT/s), a 1.35x improvement in memory bandwidth over first-generation solutions. Renesas has been instrumental in the design, development and deployment of the new MRDIMMs, collaborating with industry leaders including CPU and memory providers, along with end customers.

ASRock, the global leading manufacturer of motherboards, graphics cards, mini PCs, gaming monitors and power supply units, proudly announces a new milestone achieved with the Z890 Taichi OCF motherboard. In a remarkable overclocking feat, overclocker AKM broke a world record in memory overclocking, pushing memory frequency to a staggering DDR5-12527 MHz. This milestone was accomplished using the Intel Core Ultra 9 285K Processor, paired with the Z890 Taichi OCF motherboard and v-color Manta XFinity RGB memory, to set an impressive new benchmark in performance.

The Z890 Taichi OCF is the pinnacle of ASRock's commitment to extreme overclocking, embodying the philosophy "Built for Extreme Overclocking." Engineered to meet the demands of professional overclockers, this motherboard delivers unparalleled precision, overclocking capability, and performance. With an advanced design that allows for peak stability and high-frequency performance, the Z890 Taichi OCF has quickly set a new standard for enthusiasts and professionals who push their systems to the limit.

Expanding the system's computing capability with an additional accelerator like a GPU is common. However, expanding the system's memory capacity with room for more DIMM is something new. Thanks to ServeTheHome, we see that at the OCP Summit 2024, Lenovo showcased its ThinkSystem SR860 V3 server, leveraging CXL technology and Astera Labs Leo memory controllers to accommodate a staggering 16 TB of DDR5 memory across 128 DIMM slots. Traditional four-socket servers face limitations due to the memory channels supported by Intel Xeon processors. With each CPU supporting up to 16 DDR5 DIMMs, a four-socket configuration maxes out at 64 DIMMs, equating to 8 TB when using 128 GB RDIMMs. Lenovo's new approach expands this ceiling significantly by incorporating an additional 64 DIMM slots through CXL memory expansion.

The ThinkSystem SR860 V3 integrates Astera Labs Leo controllers to enable the CXL-connected DIMMs. These controllers manage up to four DDR5 DIMMs each, resulting in a layered memory design. The chassis base houses four Xeon processors, each linked to 16 directly connected DIMMs, while the upper section—called the "memory forest"—houses the additional CXL-enabled DIMMs. Beyond memory capabilities, the server supports up to four double-width GPUs, making it also a solution for high-performance computing and AI workloads. This design caters to scale-up applications requiring vast memory resources, such as large-scale database management, and allows the resources to stay in memory instead of waiting on storage. CXL-based memory architectures are expected to become more common next year. Future developments may see even larger systems with shared memory pools, enabling dynamic allocation across multiple servers. For more pictures and video walkthrough, check out ServeTheHome's post.

Apacer, a global leader in digital storage solutions, today announced the official release of its flagship NOX RGB DDR5 Gaming Memory, specially designed for the world's most demanding gamers and aesthetics. Engineered for unprecedented speed, stability, and stunning visual effects, the NOX RGB DDR5 is the ultimate upgrade for those seeking top-tier performance.

Peak Performance Redefined
With its overclocking capability reaching up to 8000 MT/s, the NOX RGB DDR5 Gaming Memory is built to deliver cutting-edge performance in the most intense gaming environments. The inclusion of the latest overclocking technologies, such as Intel XMP 3.0 and AMD EXPO, makes it easier than ever for gamers to achieve peak performance with just a single click.

GeIL - Golden Emperor International Ltd. - one of the world's leading PC components and peripheral manufacturers, announced today that its full range of DDR5 memory products, from 6400 MT/s to 8000 MT/s, will now be available in both CUDIMM and UDIMM options to meet diverse consumer needs. For high-end overclocking applications, GeIL is introducing two new high-speed specifications, 8800 MT/s and 9200 MT/s, offering overclocking enthusiasts an optimal choice for top performance. Both CUDIMM and UDIMM options ensure excellent compatibility and full support for Intel's latest Core Ultra Processors (Series 2).

According to the latest JEDEC standards, CUDIMM includes an additional CKD (Clock Driver) chip, which regenerates the clock signal directly on the DIMM. This integration reduces signal degradation and noise, resulting in enhanced memory stability and performance, with stable operation at speeds of 6400 MT/s and even reaching up to 7200 MT/s. For both standard and high-performance applications, the CKD chip plays a crucial role in signal integrity and reliability, enabling faster, more stable speeds.

The 8th edition of the Samsung AI Forum was held on November 4th and 5th in Seoul, and among all the presentations and keynote speeches, one piece of information caught our attention. As reported by The Chosun Daily, Samsung is (again) turning its attention to Processing-in-Memory (PIM) technology, in what appears to be the company's latest attempt to keep up with its rival SK Hynix in this area. In 2021, Samsung introduced the world's first HBM-PIM, the chips showing impressive gains in performance (nearly double) while reducing energy consumption by almost 50% on average. PIM technology basically adds the processor functions necessary for computational tasks, reducing data transfer between the CPU and memory.

Now, the company hopes that PIM memory chips could replace HBM in the future, based on the advantages this next-generation memory technology possesses, mainly for artificial intelligence (AI) applications. "AI is transforming our lives at an unprecedented rate, and the question of how to use AI more responsibly is becoming increasingly important," said Samsung Electronics CEO Han Jong-hee in his opening remarks. "Samsung Electronics is committed to fostering a more efficient and sustainable AI ecosystem." During the event, Samsung also highlighted its partnership with AMD, which reportedly supplies AMD with its fifth-generation HBM, the HBM3E.

KLEVV, the leading consumer memory and storage brand introduced by Essencore, is excited to announce the launch of its brand-new URBANE V RGB DDR5 Gaming/OC memory. Ideal for advanced content creation and professional gaming. Inspired by the traditional bow and arrow, the URBANE V RGB DDR5 Gaming/OC memory captures the essence of speed, stability, and precision. It effortlessly blends style and functionality, with flowing curves evoking a bow, sleek white aesthetics reminiscent of a quill, and precision of archery portraying its cutting-edge hardware built for accuracy, symbolizing limitless potential—making it a perfect fit for any build.

Crafted from premium components, it features a 2 mm-thick aluminium heat sink with sleek linear grooves, refined curved edges, and a low-profile height of 42.5 mm, ensuring superior cooling efficiency and eye-catching aesthetics. Engineered with precision, it optimizes heat dissipation to regulate temperatures during intense gaming. Fully customizable RGB lighting offers 16 million colors and synchronized effects, seamlessly integrating with major motherboard RGB software for limitless personalization.

SK hynix CEO Kwak Noh-Jung, during his keynote speech titled "A New Journey in Next-Generation AI Memory: Beyond Hardware to Daily Life" at SK AI Summit in Seoul, made public development of the industry's first 48 GB 16-high - the world's highest number of layers followed by the 12-high product—HBM3E. Kwak also shared the company's vision to become a "Full Stack AI Memory Provider", or a provider with a full lineup of AI memory products in both DRAM and NAND spaces, through close collaboration with interested parties.

In actively verifying its next-generation CAMM2 (Compression Attached Memory Module 2) memory modules, global memory leader Team Group Inc. today announced two specifications: consumer-grade CAMM2 DDR5 7200 MHz and industrial-grade CAMM2 DDR5 6400 MHz. These new products provide expanded options for the memory market, delivering faster data transfer speeds, enhanced performance, and greater user flexibility.

The consumer-grade CAMM2 memory from Team Group operates at DDR5 7200 MHz CL34-42-42-84 under manual overclocking, delivering exceptional performance. Compared to the default JEDEC specification, the module offers write, copy, and read speeds of up to 108,000 MB/s, 106,000 MB/s, and 117,000 MB/s, respectively, while reducing overall latency to 55ns. The module delivers smoother performance when running large applications, gaming, or multitasking. The potential to achieve ultra-high frequencies of 8000-9000 MHz in the future further underscores its superior capabilities. In addition, Team Group Industrial is developing an industrial-grade CAMM2 memory, optimized for DDR5 6400 MHz, which is designed for industrial control, edge computing, and AI applications, providing robust support for high-performance computing and real-time data processing. The module will play a critical role in the development of technologies such as smart manufacturing, autonomous driving, and smart cities by improving both performance and reliability.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of PS-007A LPDDR5 CAMM2 Connector Performance Standard. The connector, referred to as "LP5CAMM2," is designed to offer a standardized modular LPDDR5 solution with ecosystem support, unlike the traditional LPDDR5 memory-down approach. Developed by JEDEC's JC-11 Committee for Mechanical Standardization, PS-007A is available for free download from the JEDEC website.

As compared to a DDR5 SODIMM connector, benefits of the LP5CAMM2 connector include:

• Better signal integrity (SI) and improved radio frequency interference (RFI)
• To enable a module solution with lower power consumption and increased battery life
• 50% form factor reduction with the similar Z height

Samsung Electronics today reported financial results for the third quarter ended Sept. 30, 2024. The Company posted KRW 79.1 trillion in consolidated revenue, an increase of 7% from the previous quarter, on the back of the launch effects of new smartphone models and increased sales of high-end memory products. Operating profit declined to KRW 9.18 trillion, largely due to one-off costs, including the provision of incentives in the Device Solutions (DS) Division. The strength of the Korean won against the U.S. dollar resulted in a negative impact on company-wide operating profit of about KRW 0.5 trillion compared to the previous quarter.

In the fourth quarter, while memory demand for mobile and PC may encounter softness, growth in AI will keep demand at robust levels. Against this backdrop, the Company will concentrate on driving sales of High Bandwidth Memory (HBM) and high-density products. The Foundry Business aims to increase order volumes by enhancing advanced process technologies. Samsung Display Corporation (SDC) expects the demand of flagship products from major customers to continue, while maintaining a quite conservative outlook on its performance. The Device eXperience (DX) Division will continue to focus on premium products, but sales are expected to decline slightly compared to the previous quarter.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

KIOXIA America, Inc. today announced that it has begun mass production of the industry's first Universal Flash Storage (UFS) Ver. 4.0 embedded flash memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance. KIOXIA's new 512 gigabyte (GB) QLC UFS achieves sequential read speeds of up to 4,200 megabytes per second (MB/s) and sequential write speeds of up to 3,200 MB/s, taking full advantage of the UFS 4.0 interface speed.