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ORCIDFrederic Monsieur
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2020 – today
- 2023
[c5]S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier:
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. ESSDERC 2023: 101-104- [c4]C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy:
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS 2023: 1-5 - [c3]Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix:
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS 2023: 1-8
2010 – 2019
- 2017
- [j13]Maxime Penzes, S. Dudit, Frederic Monsieur, Luca Silvestri, F. Nallet, D. Lewis, P. Perdu:
Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies. Microelectron. Reliab. 76-77: 227-232 (2017) - 2016
- [j12]Giacomo Garegnani
, Vincent Fiori, Gilles Gouget, Frederic Monsieur, Clément Tavernier:
Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. Microelectron. Reliab. 63: 90-96 (2016) - 2014
- [c2]Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord:
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC 2014: 254-257
2000 – 2009
- 2009
- [c1]Raúl Andrés Bianchi, Christine Raynaud, Floria Blanchet, Frederic Monsieur, Olivier Noblanc:
High voltage devices in advanced CMOS technologies. CICC 2009: 363-370 - 2008
- [j11]Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo:
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48(8-9): 1198-1201 (2008) - 2007
- [j10]D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac:
Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectron. Reliab. 47(9-11): 1634-1638 (2007) - 2005
- [j9]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j8]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j7]G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43(8): 1211-1214 (2003) - 2002
- [j6]David Roy, S. Bruyère, E. Vincent, Frederic Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42(9-11): 1497-1500 (2002) - [j5]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - 2001
- [j4]Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41(7): 1035-1039 (2001) - [j3]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j2]M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectron. Reliab. 41(9-10): 1361-1366 (2001) - [j1]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001)
Coauthor Index
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