"Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs."

Hideaki Matsuzaki et al. (2006)

> Home

Details and statistics

DOI: 10.1093/IETELE/E89-C.7.949

access: closed

type: Journal Article

metadata version: 2020-04-11

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ieicet/MatsuzakiMET06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/MatsuzakiMET06
Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu:
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs. IEICE Trans. Electron. 89-C(7): 949-953 (2006)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.