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ORCIDMohamed Ali Belaïd
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2020 – today
- 2024
[j19]Fathia Letaief
, Mahmoud Hamouda, Mohamed Ali Belaïd, Kamal Al-Haddad:
A Comprehensive Approach to Flexible LVRT Strategies for Inverter-Based PPMs Enhancing Voltage-Support, Overcurrent Protection, and DC-Link Voltage Quality. IEEE Access 12: 52990-53017 (2024)- 2020
- [j18]Mohamed Ali Belaïd, Ahmed Almusallam, Mohamed Masmoudi:
RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band. IET Circuits Devices Syst. 14(6): 805-810 (2020)
2010 – 2019
- 2018
- [j17]Mohamed Ali Belaïd:
Symptom reliability: S-parameters evaluation of power laterally diffused-metal-oxide-semiconductor field-effect transistor after pulsed-RF life tests for a radar application. IET Circuits Devices Syst. 12(5): 571-578 (2018) - [j16]Mohamed Ali Belaïd:
Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests. Microelectron. Reliab. 91: 8-14 (2018) - 2016
- [j15]Mohamed Ali Belaïd, H. Kaouach, Jaleleddine Ben Hadj Slama:
Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests. Microelectron. Reliab. 64: 93-97 (2016) - 2015
- [j14]Mohamed Ali Belaïd:
Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests. Microelectron. Reliab. 55(9-10): 2041-2044 (2015) - 2014
- [j13]Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry:
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectron. J. 45(12): 1800-1805 (2014) - [j12]Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry:
Performance drifts of N-MOSFETs under pulsed RF life test. Microelectron. Reliab. 54(9-10): 1851-1855 (2014) - 2013
- [j11]Mohamed Tlig, Jaleleddine Ben Hadj Slama, Mohamed Ali Belaïd:
Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests. Microelectron. Reliab. 53(9-11): 1793-1797 (2013) - 2012
- [c2]Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline:
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS 2012: 1-6 - 2011
- [j10]Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline:
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectron. Reliab. 51(9-11): 1551-1556 (2011) - 2010
- [j9]Mohamed Ali Belaïd, K. Daoud:
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. Microelectron. Reliab. 50(9-11): 1763-1767 (2010)
2000 – 2009
- 2007
- [j8]Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38(2): 164-170 (2007) - [j7]Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47(1): 59-64 (2007) - [j6]M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47(9-11): 1394-1399 (2007) - 2006
- [j5]Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46(5-6): 994-1000 (2006) - [j4]Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon:
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectron. Reliab. 46(9-11): 1800-1805 (2006) - [j3]M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46(9-11): 1806-1811 (2006) - [c1]M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE 2006: 382-385 - 2005
- [j2]Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45(9-11): 1732-1737 (2005) - 2004
- [j1]Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata:
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44(9-11): 1449-1454 (2004)
Coauthor Index
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