Microelectronics Reliability, Volume 55

Volume 55, Number 1, January 2015

Introductory Invited Papers

• 
  Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda:
  Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films. 1-14
• 
  Meng Miao, Yuanzhong Paul Zhou, Javier A. Salcedo, Jean-Jacques Hajjar, Juin J. Liou:
  Compact failure modeling for devices subject to electrostatic discharge stresses - A review pertinent to CMOS reliability simulation. 15-23
• 
  Marta Bagatin, Simone Gerardin:
  Soft errors in floating gate memory cells: A review. 24-30

Research Papers

• 
  Nguyen Dang Chien, Chun-Hsing Shih:
  Short-channel effect and device design of extremely scaled tunnel field-effect transistors. 31-37
• 
  Edward Namkyu Cho, Yong-Hyeon Shin, Ilgu Yun:
  An analytical avalanche breakdown model for double gate MOSFET. 38-41
• 
  Hai-fan Hu, Ying Wang, Hao Lan, Xin Luo, Yun-Tao Liu:
  High performance SOI CMOS pixel sensor with surrounding N+ trench electrode. 42-47
• 
  Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Jen-Inn Chyi, Geng-Yen Lee:
  N₂O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO₂ High-k insulator. 48-51
• 
  Sandra Pralgauskaite, Vilius Palenskis, Jonas Matukas, Justinas Glemza, Grigorij Muliuk, Bronius Saulys, Augustinas Trinkunas:
  Reliability investigation of light-emitting diodes via low frequency noise characteristics. 52-61
• 
  Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng, Chunsheng Guo:
  The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes. 62-65
• 
  Wenliang Zhu, Giuseppe Pezzotti:
  Raman spectroscopic assessments of structural orientation and residual stress in wurtzitic AlN film deposited on (0 0 1) Si. 66-73
• 
  Wei Chang, Chun-Hsing Shih, Yan-Xiang Luo, Wen-Fa Wu, Chen-Hsin Lien:
  Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. 74-80
• 
  François Forest, Amgad Rashed, Jean-Jacques Huselstein, Thierry Martiré, Philippe Enrici:
  Fast power cycling protocols implemented in an automated test bench dedicated to IGBT module ageing. 81-92
• 
  Sanna Lahokallio, Kirsi Saarinen-Pulli, Laura Frisk:
  Effects of different test profiles of temperature cycling tests on the reliability of RFID tags. 93-100
• 
  Sijie Cheng, Zhongzhi Yuan, Xiangping Ye, Fuyi Zhang, Jincheng Liu:
  Empirical prediction model for Li/SOCl₂ cells based on the accelerated degradation test. 101-106
• 
  Jiann-Shiun Yuan, Yu Bi:
  Process and temperature robust voltage multiplier design for RF energy harvesting. 107-113
• 
  Ilgeun Oh, Myeongjin Kim, Jooheon Kim:
  Deposition of Fe₃O₄ on oxidized activated carbon by hydrazine reducing method for high performance supercapacitor. 114-122
• 
  Wenjin Zhang, Shunli Liu, Bo Sun, Yue Liu, Michael G. Pecht:
  A cloud model-based method for the analysis of accelerated life test data. 123-128
• 
  Daniel Kurz, Horst Lewitschnig, Jürgen Pilz:
  An advanced area scaling approach for semiconductor burn-in. 129-137
• 
  Gilbert De Mey, Mariusz Felczak, Boguslaw Wiecek:
  Modelling and IR measurement of the electronic substrate thermal conductivity. 138-142
• 
  Michal Jablonski, Riccardo Lucchini, Frederick Bossuyt, Thomas Vervust, Jan Vanfleteren, J. W. C. DeVries, Pasquale Vena, Mario Gonzalez:
  Impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability. 143-154
• 
  Vobulapuram Ramesh Kumar, Brajesh Kumar Kaushik, Amalendu Patnaik:
  Crosstalk noise modeling of multiwall carbon nanotube (MWCNT) interconnects using finite-difference time-domain (FDTD) technique. 155-163
• 
  Sabeur Msolli, Joël Alexis, Olivier Dalverny, Moussa Karama:
  Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications. 164-171
• 
  Yeong K. Kim, Do Soon Hwang:
  PBGA packaging reliability assessments under random vibrations for space applications. 172-179
• 
  Mark Ashworth, Geoffrey D. Wilcox, Rebecca L. Higginson, Richard J. Heath, Chanqing Liu, Roger J. Mortimer:
  The effect of electroplating parameters and substrate material on tin whisker formation. 180-191
• 
  Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage, Bernard Plano:
  Electro- and thermomigration induced Cu₃Sn and Cu₆Sn₅ formation in SnAg_3.0Cu_0.5 bumps. 192-200
• 
  Nhat Ly, Di Erick Xu, Wan Ho Song, Michael Mayer:
  More uniform Pd distribution in free-air balls of Pd-coated Cu bonding wire using movable flame-off electrode. 201-206
• 
  Hirohiko Endoh, Takuya Naoe:
  Copper wire bonding package decapsulation using the anodic protection method. 207-212
• 
  Lei Su, Tielin Shi, Li Du, Xiangning Lu, Guanglan Liao:
  Genetic algorithms for defect detection of flip chips. 213-220
• 
  Cheng-fu Chen, Sheng-Tsai Wu:
  Equivalent mechanical properties of through silicon via interposers - A unit model approach. 221-230
• 
  Hsiu-Min Lin, Cheng-Ying Ho, Wen-Lin Chen, Yi-Hsin Wu, De-Hui Wang, Jun-Ren Lin, Yu-Hui Wu, Huei-Cheng Hong, Zhi-Wei Lin, Jenq-Gong Duh:
  Interfacial reaction and mechanical evaluation in multi-level assembly joints with ENEPIG under bump metallization via drop and high speed impact test. 231-237
• 
  Ghaith Bany Hamad, Syed Rafay Hasan, Otmane Aït Mohamed, Yvon Savaria:
  Characterizing, modeling, and analyzing soft error propagation in asynchronous and synchronous digital circuits. 238-250
• 
  Jiajia Jiao, Da-Cheng Juan, Diana Marculescu, Yuzhuo Fu:
  Exploiting component dependency for accurate and efficient soft error analysis via Probabilistic Graphical Models. 251-263
• 
  Vahid Hamiyati Vaghef, Ali Peiravi:
  Node-to-node error sensitivity analysis using a graph based approach for VLSI logic circuits. 264-271
• 
  Tatjana R. Nikolic, Goran S. Nikolic, Mile K. Stojcev, Zoran Stamenkovic:
  Low-power fault-tolerant interconnect method based on LCDMA and duplication. 272-281
• 
  Behzad Eghbalkhah, Mehdi Kamal, Ali Afzali-Kusha, Mohammad Bagher Ghaznavi Ghoushchi, Massoud Pedram:
  CSAM: A clock skew-aware aging mitigation technique. 282-290

Corrigendum

• 
  Luowei Zhou, Junke Wu, Pengju Sun, Xiong Du:
  Corrigendum to "Junction temperature management of IGBT module in power electronic converters" [Microelectron. Reliab. 54 (2014) 2788-2795]. 291

Volume 55, Number 2, February 2015

• 
  Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci, Andrea Sucre-González, Juin J. Liou:
  A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction. 293-307
• 
  Chih-Hsiang Ho, Soo Youn Kim, Kaushik Roy:
  Ultra-thin dielectric breakdown in devices and circuits: A brief review. 308-317
• 
  Ying Wang, Chan Shan, Zheng Dou, Liguo Wang, Fei Cao:
  Improved performance of nanoscale junctionless transistor based on gate engineering approach. 318-325
• 
  Sayani Ghosh, Kalyan Koley, Chandan Kumar Sarkar:
  Impact of the lateral straggle on the Analog and RF performance of TFET. 326-331
• 
  Ko-Chun Lee, Ming-Long Fan, Pin Su:
  Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation. 332-336
• 
  Meng Chuan Lee, Hin Yong Wong:
  Investigation on the origin of the anomalous tail bits on nitrided charge trap flash memory. 337-341
• 
  Y. Huang, Jing-Ping Xu, L. S. Wang, S. Y. Zhu:
  A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. 342-346
• 
  Cen Tang, Gang Xie, Kuang Sheng:
  Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT. 347-351
• 
  Chih-Jen Yu, Ching-Hung Hung, Kuei-Chu Hsu, Chien Chou:
  Phase-shift imaging ellipsometer for measuring thin-film thickness. 352-357
• 
  Carmen G. Almudéver, Antonio Rubio:
  Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections. 358-366
• 
  A. A. Dakhel, Seamas Cassidy, Khalil E. Jasim, Fryad Zeki Henari:
  Synthesis and characterisation of curcumin-M (M = B, Fe and Cu) films grown on p-Si substrate for dielectric applications. 367-373
• 
  Nabeeh Kandalaft, Ali Attaran, Rashid Rashidzadeh:
  High speed test interface module using MEMS technology. 374-382
• 
  Nur Hasyimah Hashim, P. Anithambigai, D. Mutharasu:
  Thermal characterization of high power LED with ceramic particles filled thermal paste for effective heat dissipation. 383-388
• 
  Krzysztof Górecki:
  Modelling mutual thermal interactions between power LEDs in SPICE. 389-395
• 
  Yuan Yue, Shiwei Feng, Chunsheng Guo, Xin Yan, Rui-Rui Feng:
  All-digital thermal distribution measurement on field programmable gate array using ring oscillators. 396-401
• 
  Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
  Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. 402-406
• 
  Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
  Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. 407-410
• 
  Takuya Naoe:
  Case study: Root cause of fluorine detection during TiN ARC layer corrosion of AlSiCu metal lines. 411-417
• 
  Chunsheng Zhu, Heng Li, Gaowei Xu, Le Luo:
  A novel mechanical diced trench structure for warpage reduction in wafer level packaging process. 418-423
• 
  Chunyan Yin, Chris Best, Chris Bailey, Stoyan Stoyanov:
  Statistical analysis of the impact of refinishing process on leaded components. 424-431
• 
  Jiwon Shin, Il Kim, Yong-Won Choi, Young Soon Kim, Un Byung Kang, Young Kun Jee, Kyung-Wook Paik:
  Non-conductive film with Zn-nanoparticles (Zn-NCF) for 40 μm pitch Cu-pillar/Sn-Ag bump interconnection. 432-441
• 
  YongHyuk Kwon, HeeSeon Bang, Sungmin Joo, HanSur Bang:
  Numerical analysis of thermo-mechanical characteristics of solder joint depending on change in solder junction structure of MCP. 442-447
• 
  Mohsen Raji, Hossein Pedram, Behnam Ghavami:
  A practical metric for soft error vulnerability analysis of combinational circuits. 448-460
• 
  Ivica Manic:
  Microwave Engineering: Concepts and Fundamentals, Ahmad Shahid Khan. CRC Press Taylor & Francis Group, Boca Raton (2014). 800 p., Hardcover, ISBN: 9781466591417. 461

Volume 55, Numbers 3-4, February-March 2015

• 
  Chunlei Wu, Suying Yao, Corinne Bergès:
  Leakage current study and relevant defect localization in integrated circuit failure analysis. 463-469
• 
  A. S. N. Pereira, Renato C. Giacomini:
  An accurate closed-expression model for FinFETs parasitic resistance. 470-480
• 
  Chie-In Lee, Wei-Cheng Lin:
  MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network. 481-485
• 
  Xiangming Xu, Jingfeng Huang, Han Yu, Biao Ma, Peng-Fei Wang, David Wei Zhang:
  Elimination of stress induced dislocation in deep Poly Sinker LDMOS technology. 486-491
• 
  Hatice Gül Sezgin, Yasin Özçelep:
  Characterization and modeling of power MOSFET switching times variations under constant electrical stress. 492-497
• 
  Gerhard G. Fischer, Grazia Sasso:
  Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions. 498-507
• 
  Cunbo Zhang, Jian-de Zhang, Honggang Wang, Guangxing Du:
  Burnout properties of microwave pulse injected on GaAs PHEMT. 508-513
• 
  Cen Xiong, Shuhuan Liu, Yonghong Li, Du Tang, Jinxin Zhang, Xuecheng Du, Chaohui He:
  Hot carrier effect on the bipolar transistors' response to electromagnetic interference. 514-519
• 
  Yang Wang, Xiangliang Jin, Liu Yang, Qi Jiang, Huihui Yuan:
  Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection. 520-526
• 
  Moon-Hwan Chang, Peter Sandborn, Michael G. Pecht, Winco K. C. Yung, Wenbin Wang:
  A return on investment analysis of applying health monitoring to LED lighting systems. 527-537
• 
  Atif Alkhazaili, Mohammad M. Hamasha, Gihoon Choi, Susan Lu, Charles R. Westgate:
  Reliability of thin films: Experimental study on mechanical and thermal behavior of indium tin oxide and poly(3, 4-ethylenedioxythiophene). 538-546
• 
  Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir:
  Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions. 547-551
• 
  Emre Özkol, Franziska Brem, Chunlei Liu:
  Improving the power cycling performance of IGBT modules by plating the emitter contact. 552-557
• 
  Koushik Dutta, Basanta Bhowmik, Arnab Hazra, Partha P. Chattopadhyay, Partha Bhattacharyya:
  An efficient BTX sensor based on p-type nanoporous titania thin films. 558-564
• 
  Choon-W. Nahm:
  Degradation behavior by DC-accelerated and pulse-current stress in Co/Cr/Y/Al/Ni co-doped ZnO-PrO_1.83-based varistors. 565-571
• 
  Seongjun Lee, Jonghoon Kim, Bo-Hyung Cho:
  Maximum pulse current estimation for high accuracy power capability prediction of a Li-Ion battery. 572-581
• 
  Elviz George, Michael D. Osterman, Michael G. Pecht:
  An evaluation of dwell time and mean cyclic temperature parameters in the Engelmaier model. 582-587
• 
  Ee-Hua Wong:
  The fundamentals of thermal-mass diffusion analogy. 588-595
• 
  Li Yang, Yaocheng Zhang, Chengchao Du, Jun Dai, Ning Zhang:
  Effect of aluminum concentration on the microstructure and mechanical properties of Sn-Cu-Al solder alloy. 596-601
• 
  J. Gomes, M. Mayer, Bill S. Lin:
  Development of a fast method for optimization of Au ball bond process. 602-607
• 
  Yi-Wei Tseng, Fei-Yi Hung, Truan-Sheng Lui:
  Microstructure, tensile and electrical properties of gold-coated silver bonding wire. 608-612
• 
  Xue-Ru Guo, Wen-Bin Young:
  Vacuum effect on the void formation of the molded underfill process in flip chip packaging. 613-622
• 
  Wenguo Zhang, Jian-hua Ma, Li-Lan Gao, Zhe Zhang, Hong Gao:
  Fatigue life and resistance analysis of COG assemblies under hygrothermal aging. 623-629
• 
  Cheng-Han Wu, Weng-Sing Hwang:
  The effect of the echo-time of a bipolar pulse waveform on molten metallic droplet formation by squeeze mode piezoelectric inkjet printing. 630-636
• 
  Qi Jiang, Huihui Yuan, Yang Wang, Xiangliang Jin:
  Design and analyze of transient-induced latch-up in RS485 transceiver with on-chip TVS. 637-644
• 
  Hao Cai, You Wang, Kaikai Liu, Lirida Alves de Barros Naviner, Hervé Petit, Jean-François Naviner:
  Cross-layer investigation of continuous-time sigma-delta modulator under aging effects. 645-653
• 
  Anna Richelli, Gilbert Matig-a, Jean-Michel Redoute:
  Design of a folded cascode opamp with increased immunity to conducted electromagnetic interference in 0.18 μm CMOS. 654-661
• 
  Arwa Ben Dhia, Mariem Slimani, Hao Cai, Lirida A. B. Naviner:
  A dual-rail compact defect-tolerant multiplexer. 662-670
• 
  Pawel Leczycki, Artur Andrzejczak, Piotr Pietrzak, Bartosz Pekoslawski, Andrzej Napieralski:
  Extended Sensor Reliability Evaluation Method in multi-sensor control systems. 671-678
• 
  Mohsen Jahanshahi, Fathollah Bistouni:
  Improving the reliability of the Benes network for use in large-scale systems. 679-695
• 
  Ting An, Kaikai Liu, Hao Cai, Lirida A. B. Naviner:
  Accurate reliability analysis of concurrent checking circuits employing an efficient analytical method. 696-703
• 
  Atin Mukherjee, Anindya Sundar Dhar:
  Real-time fault-tolerance with hot-standby topology for conditional sum adder. 704-712

Volume 55, Number 5, April 2015

Special Section: Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2014). Guest Editor: Professor Artur Wymyslowski

• 
  Artur Wymyslowski:
  Guest Editorial: 2014 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. 713-715
• 
  Frank Kraemer, Steffen Wiese:
  Assessment of long term reliability of photovoltaic glass-glass modules vs. glass-back sheet modules subjected to temperature cycles by FE-analysis. 716-721
• 
  Michael Edwards, Klas Brinkfeldt, Ulrich Rusche, Tobias Bukes, Gerd Gaiser, Melina Da Silva, Dag Andersson:
  The shear strength of nano-Ag sintered joints and the use of Ag interconnects in the design and manufacture of SiGe-based thermo-electric modules. 722-732
• 
  S. Watzke, P. Altieri-Weimar:
  Degradation of silicone in white LEDs during device operation: a finite element approach to product reliability prediction. 733-737
• 
  Benjamin Vianne, Pierre Bar, Vincent Fiori, Sébastien Gallois-Garreignot, Komi-Atchou Ewuame, Pascal Chausse, Stephanie Escoubas, Nicolas Hotellier, Olivier Thomas:
  Thermo-mechanical characterization of passive stress sensors in Si interposer. 738-746
• 
  M. Kudryavtsev, Evgenii B. Rudnyi, Jan G. Korvink, Dennis Hohlfeld, Tamara Bechtold:
  Computationally efficient and stable order reduction methods for a large-scale model of MEMS piezoelectric energy harvester. 747-757
• 
  Dawid Jan Król, Artur Wymyslowski, Kamil Nouri Allaf:
  Adhesion work analysis through molecular modeling and wetting angle measurement. 758-764
• 
  Nabi Nabiollahi, Nele Moelans, Mario Gonzalez, Joke De Messemaeker, Christopher J. Wilson, Kristof Croes, Eric Beyne, Ingrid De Wolf:
  Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling. 765-770

Research Articles

• 
  Jinling Wang, Shengkui Zeng, Vadim V. Silberschmidt, Jianbin Guo:
  Multiphysics modeling approach for micro electro-thermo-mechanical actuator: Failure mechanisms coupled analysis. 771-782
• 
  Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, Christian Renaux, Denis Flandre:
  Diamond layout style impact on SOI MOSFET in high temperature environment. 783-788
• 
  Syed Mukulika Dinara, Saptarsi Ghosh, Nripendra N. Halder, Ankush Bag, Sekhar Bhattacharya, Dhrubes Biswas:
  Potentiality of trap charge effects and SiON induced interface defects in a-Si₃N₄/SiON based MIS structure for resistive NVM device. 789-794
• 
  Pyung Moon, Jun Yeong Lim, Tae-Un Youn, Keum-Whan Noh, Ilgu Yun:
  Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics. 795-798
• 
  Lei Zhang, Yejun Zhu, Haibin Chen, Karina Leung, Yeqing Wu, Jingshen Wu:
  Failure analysis on reflector blackening between lead frame electrodes in LEDs under WHTOL test. 799-806
• 
  Hongge Li, Huixin Bai, Qicheng Xu, Tongsheng Xia:
  Low-power MicroV_rms noise neural spike detector for implantable interface microsystem device. 807-814
• 
  Jin-Cheol Jeong, Changsoo Kwak, In-Bok Yom, In-Jong Seo, In-Ho Jo:
  Life test of an X-band MMIC multi-function chip for active phased array radar applications. 815-821
• 
  Dao-Long Chen, Tei-Chen Chen, Ping-Feng Yang, Yi-Shao Lai:
  Thermal resistance of side by side multi-chip package: Thermal mode analysis. 822-831
• 
  Kyle Doudrick, Jeff Chinn, Jason Williams, Nikhilesh Chawla, Konrad Rykaczewski:
  Rapid method for testing efficacy of nano-engineered coatings for mitigating tin whisker growth. 832-837
• 
  Kyoungtae Eun, Min-Woo Chon, Tae-Hee Yoo, Yong-Won Song, Sung-Hoon Choa:
  Electromechanical properties of printed copper ink film using a white flash light annealing process for flexible electronics. 838-845

Letter to the Editor

• 
  M. T. Alam, K. E. Maletto, J. Bielefeld, Sean W. King, M. Aman Haque:
  Mechanical stress field assisted charge de-trapping in carbon doped oxides. 846-851

Book Review

• 
  Chong Leong Gan, Uda Hashim:
  Fundamentals of Lead-Free Solder Interconnect Technology (from Microstructures to Reliability). Springer (2015). XIII pp. 253, ISBN: 978-1-4614-9265-8 (Print), 978-1-4614-9266-5 (Online). 852

Volume 55, Number 6, May 2015

• 
  K. T. Kaschani:
  What is Electrical Overstress? - Analysis and Conclusions. 853-862
• 
  Chunhua Qi, Liyi Xiao, Jing Guo, Tianqi Wang:
  Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology. 863-872
• 
  Ke Gu, Juin J. Liou, Wei Li, Yang Liu, Ping Li:
  Total ionizing dose sensitivity of function blocks in FRAM. 873-878
• 
  Ming Zhou, B. C. Zhang:
  Porous low k film with multilayer structure used for promoting adhesion to SiCN cap barrier layer. 879-885
• 
  Kun Liu, Hui Zhu, Shiwei Feng, Lei Shi, Yamin Zhang, Chunsheng Guo:
  The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs. 886-889
• 
  Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi:
  The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. 890-893
• 
  Ayaz Arif Khan:
  Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. 894-902
• 
  Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz:
  Possible failure modes in Press-Pack IGBTs. 903-911
• 
  Emre Özkol, Franziska Brem, Chunlei Liu, Samuel Hartmann, Arnost Kopta:
  Enhanced power cycling performance of IGBT modules with a reinforced emitter contact. 912-918
• 
  Pushparajah Rajaguru, Hua Lu, Chris Bailey:
  Sintered silver finite element modelling and reliability based design optimisation in power electronic module. 919-930
• 
  Po Li, Yung-Cheng Wang, Jing-Wei Peng, David Wei Zhang:
  Impact of substrate resistance and layout on passivation etch-induced wafer arcing and reliability. 931-936
• 
  Mahanth Prasad:
  Design, development and reliability testing of a low power bridge-type micromachined hotplate. 937-944
• 
  Haoyuan Li, Hua Li, Zhiwei Li, Fuchang Lin, De Liu, Wenjuan Wang, Bowen Wang, Zhijian Xu:
  T pattern fuse construction in segment metallized film capacitors based on self-healing characteristics. 945-951
• 
  Maria Mirgkizoudi, Changqing Liu, Paul P. Conway, Steve Riches:
  Mechanical and electrical characterisation of Au wire interconnects in electronic packages under the combined vibration and thermal testing conditions. 952-960
• 
  Marian Sebastian Broll, Ute Geissler, Jan Höfer, Stefan Schmitz, Olaf Wittler, Klaus-Dieter Lang:
  Microstructural evolution of ultrasonic-bonded aluminum wires. 961-968
• 
  Edwin Lillie, Peter Sandborn, David Humphrey:
  Assessing the value of a lead-free solder control plan using cost-based FMEA. 969-979
• 
  Sébastien Gallois-Garreignot, Naceur Benzima, Etienne Benmussa, Caroline Moutin, Pierre-Olivier Bouchard, Vincent Fiori, Clément Tavernier:
  Qualification of bumping processes: Experimental and numerical investigations on mechanical stress and failure modes induced by shear test. 980-989
• 
  Anirban Sengupta, Reza Sedaghat:
  Swarm intelligence driven design space exploration of optimal k-cycle transient fault secured datapath during high level synthesis based on user power-delay budget. 990-1004
• 
  Jose Luis Garcia-Gervacio, Alejandro Nocua, Víctor H. Champac:
  Screening small-delay defects using inter-path correlation to reduce reliability risk. 1005-1011

Volume 55, Number 7, June 2015

• 
  Bahar J. Farahani, Seyedamin Habibi, Saeed Safari:
  A cross-layer SER analysis in the presence of PVTA variations. 1013-1027
• 
  N. Rouag, Zahir Ouennoughi, Mathias Rommel, Katsuhisa Murakami, Lothar Frey:
  Current conduction mechanism of MIS devices using multidimensional minimization system program. 1028-1034
• 
  Fan Li, Jiuping Xu:
  A new prognostics method for state of health estimation of lithium-ion batteries based on a mixture of Gaussian process models and particle filter. 1035-1045
• 
  Hua Li, Xiang Huang, Zhiwei Li, Haoyuan Li, Wenjuan Wang, Bowen Wang, Qin Zhang, Fuchang Lin:
  Modeling of ESR in metallized film capacitors and its implication on pulse handling capability. 1046-1053
• 
  Nishad Patil, Diganta Das, Michael G. Pecht:
  Anomaly detection for IGBTs using Mahalanobis distance. 1054-1059
• 
  Toshitaka Ishizaki, Masashi Yanase, A. Kuno, T. Satoh, Masanori Usui, F. Osawa, Yasushi Yamada:
  Thermal simulation of joints with high thermal conductivities for power electronic devices. 1060-1066
• 
  Nemdili Saleha, Nemdili Fadèla, Azzi Abbès:
  Improving cooling effectiveness by use of chamfers on the top of electronic components. 1067-1076
• 
  Ting Wang, Bo Gu, Pengcheng Zhao, Cheng Qian:
  Numerical investigation of liquid cooling cold plate for power control unit in fuel cell vehicle. 1077-1088
• 
  Li-Lan Gao, Xu Chen, Hong Gao:
  Interfacial thermal stresses in ACF bonding assembly. 1089-1096
• 
  Yongxin Zhu, Xiaoyan Li, Chao Wang, Ruiting Gao:
  A new creep-fatigue life model of lead-free solder joint. 1097-1100
• 
  Raj Sekar Sethu, Hong Seng Ng, Alvin Chan, Cheng Nee Ong, Sieng Fong Chan:
  Characterization of copper precipitates on aluminum copper bond pads formed after plasma clean and de-ionized water exposure. 1101-1108
• 
  Gabriel L. Nazar:
  Improving FPGA repair under real-time constraints. 1109-1119
• 
  Daniel Arbet, Viera Stopjaková, Martin Kovác:
  Investigation of the optimum oscillation frequency value towards increasing the efficiency of OBIST approach. 1120-1125
• 
  Yue Xu, Yang Huang:
  Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories. 1126-1129

Volume 55, Number 8, 2015

• 
  Nandakishor Yadav, Shikha Jain, Manisha Pattanaik, G. K. Sharma:
  A novel stability and process sensitivity driven model for optimal sized FinFET based SRAM. 1131-1143
• 
  Li-Lung Lai, Xiaojing Wu:
  The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis. 1144-1151
• 
  Behzad Eghbalkhah, Mehdi Kamal, Hassan Afzali-Kusha, Ali Afzali-Kusha, M. B. Ghaznavi-Ghoushchi, Massoud Pedram:
  Workload and temperature dependent evaluation of BTI-induced lifetime degradation in digital circuits. 1152-1162
• 
  Chie-In Lee, Wei-Cheng Lin, Yan-Ting Lin:
  Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series. 1163-1168
• 
  N. Abdelwahed, M. Troudi, Nabil Sghaier, Abdelkader Souifi:
  Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. 1169-1173
• 
  Xinhai Yu, Changchun Chai, Yang Liu, Yintang Yang, Qingyang Fan:
  Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs. 1174-1179
• 
  Jinxin Zhang, Chaohui He, Hongxia Guo, Du Tang, Cen Xiong, Pei Li, Xin Wang:
  3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. 1180-1186
• 
  Brian S. Poling, J. L. Brown, E. R. Heller, B. Stumpff, J. A. Beckman, A. M. Hilton:
  Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing. 1187-1191
• 
  Henrique L. Gomes, Maria C. R. Medeiros, Fulvia Villani, J. Canudo, Fausta Loffredo, R. Miscioscia, Carme Martínez-Domingo, Eloi Ramon, Enrico Sowade, K. Y. Mitra, Reinhard R. Baumann, Iain McCulloch, Jordi Carrabina:
  All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime. 1192-1195
• 
  Kristian Bonderup Pedersen, Lotte Haxen Østergaard, Pramod Ghimire, Vladimir N. Popok, Kjeld Pedersen:
  Degradation mapping in high power IGBT modules using four-point probing. 1196-1204
• 
  Simon Gousseau, Stéphane Moreau, David Bouchu, Alexis Farcy, Pierre Montmitonnet, Karim Inal, François Bay, Marc Zelsmann, Emmanuel Picard, Mathieu Salaün:
  Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence. 1205-1213
• 
  H. B. Qin, X. P. Zhang, M. B. Zhou, X. P. Li, Yiu-Wing Mai:
  Geometry effect on mechanical performance and fracture behavior of micro-scale ball grid array structure Cu/Sn-3.0Ag-0.5Cu/Cu solder joints. 1214-1225
• 
  Tianwei Hu, Yi Li, Yan-Cheong Chan, Fengshun Wu:
  Effect of nano Al₂O₃ particles doping on electromigration and mechanical properties of Sn-58Bi solder joints. 1226-1233
• 
  Yang Liu, Fenglian Sun, Hao Zhang, Tong Xin, Cadmus A. Yuan, Guoqi Zhang:
  Interfacial reaction and failure mode analysis of the solder joints for flip-chip LED on ENIG and Cu-OSP surface finishes. 1234-1240
• 
  Kyoung-Moo Harr, Sun-Chul Kim, Young-Min Kim, Young-Ho Kim:
  Development of chip-on-flex bonding using Sn-based bumps and non-conductive adhesive. 1241-1247
• 
  Yu-Jung Huang, Ming-Kun Chen, Yi-Lung Lin, Shen-Li Fu:
  Fabrication and characterization of low-cost ultrathin flexible polyimide interposer. 1248-1255
• 
  Yi-Wei Tseng, Fei-Yi Hung, Truan-Sheng Lui, Mei-Yu Chen, Hao-Wen Hsueh:
  Effect of annealing on the microstructure and bonding interface properties of Ag-2Pd alloy wire. 1256-1261
• 
  Amin Bagheri, Mahboubeh Ranjbar, Saeed Haji-Nasiri, Sattar Mirzakuchaki:
  Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects. 1262-1268

Volume 55, Numbers 9-10, August - September 2015

Editorial

• 
  Marise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier:
  Editorial. 1269-1270

SESSION A : Quality and Reliability Assessment - Techniques and Methods for Devices and Systems

• 
  Stoyan Stoyanov, Chris Bailey:
  Modelling the impact of refinishing processes on COTS components for use in aerospace applications. 1271-1279
• 
  Taichun Qin, Shengkui Zeng, Jianbin Guo:
  Robust prognostics for state of health estimation of lithium-ion batteries based on an improved PSO-SVR model. 1280-1284
• 
  Mariem Slimani, Arwa Ben Dhia, Lirida A. B. Naviner:
  A novel analytical method for defect tolerance assessment. 1285-1289
• 
  Taizhi Liu, Chang-Chih Chen, Woongrae Kim, Linda Milor:
  Comprehensive reliability and aging analysis on SRAMs within microprocessor systems. 1290-1296
• 
  Nagarajan Raghavan, Daniel D. Frey:
  Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms. 1297-1301
• 
  Otto Aureliano Rolloff, Rodrigo Possamai Bastos, Laurent Fesquet:
  Exploiting reliable features of asynchronous circuits for designing low-voltage components in FD-SOI technology. 1302-1306
• 
  Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov:
  Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. 1307-1312
• 
  Dae Hyun Kim, Soonyoung Cha, Linda S. Milor:
  AVERT: An elaborate model for simulating variable retention time in DRAMs. 1313-1319
• 
  Jun Yeong Lim, Ilgu Yun:
  Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices. 1320-1322
• 
  Hao Cai, You Wang, Lirida A. B. Naviner, W. S. Zhao:
  Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology. 1323-1327
• 
  Loic Welter, J. L. Scotto di Quaquero, Philippe Dreux, Laurent Lopez, Hassen Aziza, Jean-Michel Portal:
  Improvement of MOSFET matching characterization with calibrated multiplexed test structure. 1328-1333
• 
  Taizhi Liu, Chang-Chih Chen, Soonyoung Cha, Linda Milor:
  System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown. 1334-1340
• 
  Mohammad Naouss, François Marc:
  Design and implementation of a low cost test bench to assess the reliability of FPGA. 1341-1345
• 
  Corinne Bergès, Y. Weber, Pierre Soufflet:
  General linearized model use for High Power Reliability Assessment test results: Conditions, procedure and case study. 1346-1350
• 
  Mauro Ciappa, Alessandro Blascovich:
  Reliability odometer for real-time and in situ lifetime measurement of power devices. 1351-1356
• 
  H. Tomonaga, Masanori Tsukuda, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura:
  16-Channel micro magnetic flux sensor array for IGBT current distribution measurement. 1357-1362
• 
  Masanori Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura:
  High-throughput and full automatic DBC-module screening tester for high power IGBT. 1363-1368
• 
  Christoph Eichenseer, Gerhard Pöppel, Thomas Mikolajick:
  Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement. 1369-1372
• 
  P. Balasubramanian, Douglas L. Maskell:
  A distributed minority and majority voting based redundancy scheme. 1373-1378
• 
  Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
  Impact of PVT variability on 20 nm FinFET standard cells. 1379-1383
• 
  Bo Sun, Wuyang Pan, Zili Wang, Kam-Chuen Yung:
  Envelope probability and EFAST-based sensitivity analysis method for electronic prognostic uncertainty quantification. 1384-1390
• 
  Shawki Douzi, Mohamed Tlig, Jaleleddine Ben Hadj Slama:
  Experimental investigation on the evolution of a conducted-EMI buck converter after thermal aging tests of the MOSFET. 1391-1394
• 
  Martin Versen, W. Ernst, G. Singh, Prince Gulati:
  Test setup for reliability studies of DDR2 SDRAM. 1395-1399
• 
  Z. F. Li, Yi Ren, Linlin Liu, Z. L. Wang:
  Parallel algorithm for finding modules of large-scale coherent fault trees. 1400-1403

SESSION B1: Si-Technologies & Nanoelectronics: Hot carriers, high K, gate materials

• 
  Soonyoung Cha, Dae Hyun Kim, Taizhi Liu, Linda S. Milor:
  The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system. 1404-1411
• 
  Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
  Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory. 1412-1416
• 
  Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo:
  Physically-based extraction methodology for accurate MOSFET degradation assessment. 1417-1421
• 
  Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey:
  Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach. 1422-1426
• 
  Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser:
  Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. 1427-1432
• 
  Thomas Jacquet, Grazia Sasso, Anjan Chakravorty, Niccolò Rinaldi, Klaus Aufinger, Thomas Zimmer, Vincenzo d'Alessandro, Cristell Maneux:
  Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. 1433-1437
• 
  Jin Hyung Choi, Jong Tae Park:
  Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs. 1438-1441
• 
  Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda:
  Electrical characterization of multiple leakage current paths in HfO₂/Al₂O₃-based nanolaminates. 1442-1445
• 
  Paolo Lorenzi, Rosario Rao, Fernanda Irrera:
  Conductive filament evolution in HfO₂ resistive RAM device during constant voltage stress. 1446-1449
• 
  Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
  An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO₂/SiO_x dielectric stacks for failure analysis. 1450-1455
• 
  Jae Hoon Lee, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park:
  Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. 1456-1459
• 
  S. M. Merah, Bécharia Nadji, Hakim Tahi:
  Low magnetic field Impact on NBTI degradation. 1460-1463
• 
  Koji Eriguchi, Kouichi Ono:
  Impacts of plasma process-induced damage on MOSFET parameter variability and reliability. 1464-1470
• 
  Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany:
  ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. 1471-1475
• 
  Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka:
  Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology. 1476-1480
• 
  Tudor Chirila, Winfried Kaindl, Tobias Reimann, Michael Rüb, Uwe Wahl:
  Analysis of the role of the parasitic BJT of Super-Junction power MOSFET under TLP stress. 1481-1485
• 
  Felipe Rosa, Raphael Martins Brum, Gilson I. Wirth, Fernanda Gusmão de Lima Kastensmidt, Luciano Ost, Ricardo Reis:
  Impact of dynamic voltage scaling and thermal factors on SRAM reliability. 1486-1490
• 
  Cécile Weulersse, Florent Miller, Thierry Carrière, R. Mangeret:
  Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool. 1491-1495
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
  Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. 1496-1500
• 
  Daniela Munteanu, Jean-Luc Autran:
  SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. 1501-1505
• 
  Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Tarek Saad Saoud, S. Sauze, Gilles Gasiot, Philippe Roche:
  ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. 1506-1511
• 
  Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, Philippe Mary, Stéphane Lefebvre:
  Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. 1512-1516
• 
  Tomoyuki Shoji, Shuichi Nishida, Kimimori Hamada, Hiroshi Tadano:
  Analysis of neutron-induced single-event burnout in SiC power MOSFETs. 1517-1521
• 
  Daniela Munteanu, Jean-Luc Autran:
  3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. 1522-1526
• 
  Leonid Kessarinskiy, A. Y. Borisov, Dmitry Boychenko, Alexander Nikiforov:
  DC-DC's total ionizing dose hardness decrease in passive reserve mode. 1527-1531
• 
  Philippe Galy, Wim Schoenmaker:
  Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes. 1532-1536
• 
  Sharayu Jagtap, Dinesh Sharma, Shalabh Gupta:
  Design of SET tolerant LC oscillators using distributed bias circuitry. 1537-1541
• 
  Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
  Failure analysis of ESD-stressed SiC MESFET. 1542-1548

SESSION C: Failure Analysis

• 
  Antoine Nowodzinski, Mayeul Chipaux, Loïc Toraille, Vincent Jacques, Jean-François Roch, Thierry Debuisschert:
  Nitrogen-Vacancy centers in diamond for current imaging at the redistributive layer level of Integrated Circuits. 1549-1553
• 
  Günther Vogg, T. Heidmann, Sebastian Brand:
  Scanning acoustic GHz-microscopy versus conventional SAM for advanced assessment of ball bond and metal interfaces in microelectronic devices. 1554-1558
• 
  Li Zhang, Mitsuo Koike, Mizuki Ono, Shogo Itai, Kazuya Matsuzawa, Syotaro Ono, Wataru Saito, Masakazu Yamaguchi, Yohei Hayase, Keiryo Hara:
  Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. 1559-1563
• 
  Samuel Chef, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak, Chee Lip Gan:
  Unsupervised learning for signal mapping in dynamic photon emission. 1564-1568
• 
  Murielle Béranger:
  Use of a silicon drift detector for cathodoluminescence detection. 1569-1573
• 
  M. Castignolles, Julien Goxe, R. Martin:
  Failure analysis on recovering low resistive via in mixed-mode device. 1574-1578
• 
  Allesandra Fudoli, Giuseppe Martino, A. Scrofani, Paolo Aliberti, D. Gallo, M. Cason:
  RF functional-based complete FA flow. 1579-1584
• 
  Anthony Boscaro, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
  Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering. 1585-1591
• 
  Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe, Mathieu Lisart, Jean-Max Dutertre, Alexandre Sarafianos:
  Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation. 1592-1599
• 
  Thomas Zirilli:
  Die crack failure mechanism investigations depending on the time of failure. 1600-1606
• 
  Julien Goxe, C. Abouda, Béatrice Vanhuffel:
  Latent gate oxide defects case studies. 1607-1610
• 
  Huei Hao Yap, Pik Kee Tan, G. R. Low, M. K. Dawood, Hua Feng, Yuzhe Zhao, Ran He, Hao Tan, J. Zhu, Binghai Liu, Y. M. Huang, D. D. Wang, Jeffrey Lam, Zhihong Mai:
  Top-down delayering to expose large inspection area on die side-edge with Platinum (Pt) deposition technique. 1611-1616
• 
  R. Ricciari, E. P. Ferlito, G. Pizzo, M. Padalino, G. Anastasi, M. Sacchi, G. Pappalardo, C. Consalvo, Domenico Mello:
  Auger electron spectroscopy characterization of Ti/NiV/Ag multilayer back-metal for monitoring of Ni migration on Ag surface. 1617-1621
• 
  Nicolas Courjault, Philippe Perdu, Fulvio Infante, Thierry Lebey, Vincent Bley:
  Magnetic imaging for resistive, capacitive and inductive devices; from theory to piezo actuator failure localization. 1622-1627
• 
  Koichi Endo, Kenji Norimatsu, Tomonori Nakamura, Takashi Setoya, Koji Nakamae:
  Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition. 1628-1633
• 
  Richard Randoll, Mahmud Asef, Wolfgang Wondrak, Lars Böttcher, Andreas Schletz:
  Characteristics and aging of PCB embedded power electronics. 1634-1639
• 
  V. Giuffrida, P. Barbarino, Giuseppe Muni, Giancarlo Calvagno, G. Latteo, Domenico Mello:
  Fault isolation in a case study of failure analysis on Metal-Insulator-Metal capacitor structures. 1640-1643
• 
  P. J. de Veen, C. Bos, D. R. Hoogstede, C. Th. A. Revenberg, Jessica Liljeholm, Thorbjorn Ebefors:
  High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications. 1644-1648
• 
  Y. Wang, Hao Cai, Lirida A. B. Naviner, Yue Zhang, Jacques-Olivier Klein, Weisheng Zhao:
  Compact thermal modeling of spin transfer torque magnetic tunnel junction. 1649-1653

SESSION D1: Microwave & Power Wide Band-Gap SC Devices

• 
  Isik C. Kizilyalli, P. Bui-Quang, Don Disney, H. Bhatia, Ozgur Aktas:
  Reliability studies of vertical GaN devices based on bulk GaN substrates. 1654-1661
• 
  Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni:
  Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. 1662-1666
• 
  Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle:
  Degradation of 0.25 μm GaN HEMTs under high temperature stress test. 1667-1671
• 
  M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
  Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. 1672-1676
• 
  Susanne Fichtner, Sophia Frankeser, Josef Lutz, Roland Rupp, Thomas Basler, Rolf Gerlach:
  Ruggedness of 1200 V SiC MPS diodes. 1677-1681
• 
  Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi:
  Breakdown behaviour of high-voltage GaN-HEMTs. 1682-1686
• 
  Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany:
  High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. 1687-1691
• 
  Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
  Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. 1692-1696
• 
  K. Adokanou, Karim Inal, Pierre Montmitonnet, F. Pressecq, Barbara Bonnet, J. L. Muraro:
  Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices. 1697-1702
• 
  Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani:
  An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. 1703-1707
• 
  Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel:
  Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. 1708-1713
• 
  O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux:
  Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. 1714-1718
• 
  Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart:
  Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. 1719-1723
• 
  Asad Fayyaz, Alberto Castellazzi:
  High temperature pulsed-gate robustness testing of SiC power MOSFETs. 1724-1728

SESSION D2: Photonic

• 
  A. Bensoussan, Ephraim Suhir, P. Henderson, M. Zahir:
  A unified multiple stress reliability model for microelectronic devices - Application to 1.55 μm DFB laser diode module for space validation. 1729-1735
• 
  Massimo Vanzi, Giovanna Mura, Giulia Marcello, G. Martines:
  Clamp voltage and ideality factor in laser diodes. 1736-1740
• 
  Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou:
  Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. 1741-1745
• 
  Jérémy Michaud, Guillaume Pedroza, Laurent Béchou, L. S. How, Olivier Gilard, David Veyrié, F. Laruelle, Stéphane Grauby:
  Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment. 1746-1749
• 
  Jean-Pierre Landesman, Christophe Levallois, Juan Jiménez, Frédéric Pommereau, Yoan Léger, Alexandre Beck, Thomas Delhaye, Alfredo Torres, Cesare Frigeri, Ahmed Rhallabi:
  Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour. 1750-1753
• 
  Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni:
  Long-term degradation mechanisms of mid-power LEDs for lighting applications. 1754-1758
• 
  Raphael Baillot, Yannick Deshayes, Yves Ousten, Laurent Béchou:
  Photothermal activated failure mechanism in polymer-based packaging of low power InGaN/GaN MQW LED under active storage. 1759-1764
• 
  Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Desiree Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
  Failure causes and mechanisms of retrofit LED lamps. 1765-1769
• 
  Kateryna Kiryukhina, Guy Perez, Elsa Locatelli, Hélène Chauvin, Elisa Peis:
  Upscreening of LED COTS for space science applications. 1770-1774
• 
  Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni:
  Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. 1775-1778
• 
  Yang Gi Yoon, Jae Phil Hyung, Ui Hyo Jeong, H. W. Lim, J. S. Jang:
  Life time comparison of LED package and the self-ballasted LED lamps by simple linear regression analysis. 1779-1783
• 
  Miao Cai, Dao-Guo Yang, Kunmiao Tian, Ping Zhang, Xianping Chen, Lilin Liu, Guoqi Zhang:
  Step-stress accelerated testing of high-power LED lamps based on subsystem isolation method. 1784-1789

SESSION D3 : Photovoltaic & Organic Devices

• 
  Nicola Wrachien, Nicolò Lago, Antonio Rizzo, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini, Gaudenzio Meneghesso, Andrea Cester:
  Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics. 1790-1794
• 
  Andrea Cester, Antonio Rizzo, A. Bazzega, Nicolò Lago, J. Favaro, Marco Barbato, Nicola Wrachien, Suren A. Gevorgyan, Michael Corazza, Frederik C. Krebs:
  Effects of constant voltage and constant current stress in PCBM: P3HT solar cells. 1795-1799
• 
  Domenico Mello, R. Ricciari, A. Battaglia, Marina Foti, Cosimo Gerardi:
  Case study of failure analysis in thin film silicon solar cell. 1800-1803
• 
  Jae-Seong Jeong, Yong-Hyun Kim, Chang-kyun Park, Heon-Do Kim, Joongho Choi:
  The degradation mechanism of flexible a-Si: H/μc-Si: H photovoltaic modules. 1804-1810
• 
  Dae Hyun Kim, Jong Tae Park:
  Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination. 1811-1814

SESSION E1: Packaging & Assembly

• 
  Jean-Baptiste Sauveplane, Patrice Retho, Norbert Venet, David Buso, Guy Perez, Jean-Sébastien Lefrileux:
  A reliable solderless connection technique for high I/O counts ceramic land grid array package for space applications. 1815-1820
• 
  Sébastien Jacques, R. Leroy, Marc Lethiecq:
  Impact of aluminum wire and ribbon bonding technologies on D²PAK package reliability during thermal cycling applications. 1821-1825
• 
  Peter Jacob:
  Unusual defects, generated by wafer sawing: An update, including pick&place processing. 1826-1831
• 
  Lutz Meinshausen, Kirsten Weide-Zaage, Hélène Frémont:
  Dynamical IMC-growth calculation. 1832-1837
• 
  R. Alberti, Riccardo Enrici Vaion, A. Mervic, S. Testa:
  Metal fatigue in copper pillar Flip Chip BGA: A refined acceleration model for the aluminium pad cracking failure mechanism. 1838-1842
• 
  Lado Filipovic, Anderson Pires Singulani, Frederic Roger, Sara Carniello, Siegfried Selberherr:
  Intrinsic stress analysis of tungsten-lined open TSVs. 1843-1848
• 
  Samed Barnat, Alexandrine Guédon-Gracia, Hélène Frémont:
  Virtual prototyping in a Design-for-Reliability approach. 1849-1854
• 
  Marian Sebastian Broll, Ute Geissler, Jan Höfer, Stefan Schmitz, Olaf Wittler, Martin Schneider-Ramelow, Klaus-Dieter Lang:
  Correlation between mechanical properties and microstructure of different aluminum wire qualities after ultrasonic bonding. 1855-1860
• 
  Toshitaka Ishizaki, Masanori Usui, Y. Yamada:
  Thermal cycle reliability of Cu-nanoparticle joint. 1861-1866
• 
  Nantian Wang, Yue Li, Zongyue Yu, Zhi-Qian Ren:
  Online test method of FPGA solder joint resistance with low power consumption. 1867-1871
• 
  Kirsten Rongen, Amar Mavinkurve, M. Chen, P. J. van der Wel, F. Swartjes, Rene T. H. Rongen:
  Moisture absorption and desorption in wafer level chip scale packages. 1872-1876
• 
  Zaifu Cui, Miao Cai, Ruifeng Li, Ping Zhang, Xianping Chen, Dao-Guo Yang:
  A numerical procedure for simulating thermal oxidation diffusion of epoxy molding compounds. 1877-1881
• 
  Mohd Faizul Mohd Sabri, Nor Ilyana Muhd Nordin, Suhana Mohd Said, Nur Aishah Aminah Mohd Amin, Hamzah Arof, Iswadi Jauhari, Roziana Ramli, Kirsten Weide-Zaage:
  Effect of thermal aging on the electrical resistivity of Fe-added SAC105 solder alloys. 1882-1885
• 
  Mohammad Hossein Mahdavifard, Mohd Faizul Mohd Sabri, Dhafer Abdulameer Shnawah, Suhana Mohd Said, Irfan Anjum Badruddin, S. Rozali:
  The effect of iron and bismuth addition on the microstructural, mechanical, and thermal properties of Sn-1Ag-0.5Cu solder alloy. 1886-1890
• 
  Loukas Michalas, Matroni Koutsoureli, E. Papandreou, Flavio Giacomozzi, George J. Papaioannou:
  Dielectric charging effects in floating electrode MEMS capacitive switches. 1891-1895
• 
  Sebastian Orellana, Brice Arrazat, Pascal Fornara, Christian Rivero, Sylvain Blayac, Pierre Montmitonnet, Karim Inal:
  Robust design of thermo-mechanical MEMS switch embedded in aluminium BEOL interconnect. 1896-1900
• 
  Michael Elßner, Holger Vogt:
  Failure mechanisms of microbolometer thermal imager sensors using chip-scale packaging. 1901-1905
• 
  Alessandro Cazzorla, P. Farinelli, R. Sorrentino, Benno Margesin:
  Reliability test of a RF MEMS varactor based on a double actuation mechanism. 1906-1910
• 
  Matroni Koutsoureli, Loukas Michalas, E. Papandreou, George J. Papaioannou:
  Induced charging phenomena on SiN_x dielectric films used in RF MEMS capacitive switches. 1911-1915
• 
  Kevin Melendez, A. Desmoulin, Kevin Sanchez, Philippe Perdu, Dean Lewis:
  A way to implement the electro-optical technique to inertial MEMS. 1916-1919
• 
  Radoslav Rusanov, Holger Rank, Juergen Graf, Tino Fuchs, Roland Mueller-Fiedler, Oliver Kraft:
  Reliability of platinum electrodes and heating elements on SiO₂ insulation layers and membranes. 1920-1925
• 
  Manuel Domínguez Pumar, Sergi Gorreta, Joan Pons-Nin, Faustino Gómez Rodríguez, Diego González Castaño:
  Charge induced by ionizing radiation understood as a disturbance in a sliding mode control of dielectric charge. 1926-1931

SESSION F: Power devices

• 
  Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo:
  Destruction failure analysis and international reliability test standard for power devices. 1932-1937
• 
  Christoph H. van der Broeck, Marcus Conrad, Rik W. De Doncker:
  A thermal modeling methodology for power semiconductor modules. 1938-1944
• 
  Pramod Ghimire, Kristian Bonderup Pedersen, Bjørn Rannestad, Stig Munk-Nielsen:
  Ageing monitoring in IGBT module under sinusoidal loading. 1945-1949
• 
  Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg:
  Robustness of MW-Level IGBT modules against gate oscillations under short circuit events. 1950-1955
• 
  William Sanfins, Damien Risaletto, Frédéric Richardeau, G. Blondel, M. Chemin, Philippe Baudesson:
  Preliminary failure-mode characterization of emerging direct-lead-bonding power module. Comparison with standard wire-bonding interconnection. 1956-1960
• 
  Eric Woirgard, Faical Arabi, Wissam Sabbah, Donatien Martineau, L. Théolier, Stephane Azzopardi:
  Identification and analysis of power substrates degradations subjected to severe aging tests. 1961-1965
• 
  R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros:
  In-depth investigation of metallization aging in power MOSFETs. 1966-1970
• 
  Domenico Cavaiuolo, Michele Riccio, Luca Maresca, Andrea Irace, Giovanni Breglio, Davide Daprà, Carmelo Sanfilippo, Luigi Merlin:
  A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design. 1971-1975
• 
  Hiroshi Suzuki, Mauro Ciappa:
  TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition. 1976-1980
• 
  F. Baccar, Houssam Arbess, L. Théolier, Stephane Azzopardi, Eric Woirgard:
  Ageing mechanisms in Deep Trench Termination (DT²) Diode. 1981-1987
• 
  Mads Brincker, Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir N. Popok:
  Effects of thermal cycling on aluminum metallization of power diodes. 1988-1991
• 
  Marcus Conrad, A. Diatlov, Rik W. De Doncker:
  Purpose, potential and realization of chip-attached micro-pin fin heat sinks. 1992-1996
• 
  Toni Youssef, W. Rmili, Eric Woirgard, Stephane Azzopardi, N. Vivet, D. M. Meekhof, Régis Meuret, G. Le Quilliec, C. Richard:
  Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity. 1997-2002
• 
  Yannis Belfort, J.-M. Caignard, S. Keller, J.-P. Guerveno:
  Failures on DC-DC modules following a change of wire bonding material from gold to copper. 2003-2006
• 
  Huai Wang, Dennis A. Nielsen, Frede Blaabjerg:
  Degradation testing and failure analysis of DC film capacitors under high humidity conditions. 2007-2011
• 
  Maawad Makdessi, Ali Sari, Pascal Venet, Guillaume Aubard, F. Chevalier, R. Préseau, T. Doytchinov, Jimmy Duwattez:
  Lifetime estimation of high-temperature high-voltage polymer film capacitor based on capacitance loss. 2012-2016
• 
  Houssam Arbess, F. Baccar, L. Théolier, Stephane Azzopardi, Eric Woirgard:
  Mechanical stress investigation after technological process in Deep Trench Termination DT² using BenzoCycloButene as dielectric material. 2017-2021
• 
  Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo, Søren Jørgensen:
  Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation. 2022-2026
• 
  Ronan German, Ali Sari, Pascal Venet, Olivier Briat, Jean-Michel Vinassa:
  Study on specific effects of high frequency ripple currents and temperature on supercapacitors ageing. 2027-2031
• 
  Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura:
  Failure analysis of power devices based on real-time monitoring. 2032-2035
• 
  Paolo Cova, Nicola Delmonte, Diego Chiozzi:
  Numerical analysis and experimental tests for solder joints power cycling optimization. 2036-2040
• 
  Mohamed Ali Belaïd:
  Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests. 2041-2044
• 
  M. Haussener, S. Caihol, Baptiste Trajin, Paul-Etienne Vidal, F. Carrillo:
  Thermomechanical modeling and simulation of a silicone gel for power electronic devices. 2045-2049

SESSION G: Space, Aeronautic & Embedded Systems

• 
  He Huang, Alexandre Boyer, Sonia Ben Dhia:
  Electronic counterfeit detection based on the measurement of electromagnetic fingerprint. 2050-2054
• 
  Tristan Dubois, Siham Hairoud, Marcio Hermany Gomes de Oliveira, Hélène Frémont, Geneviève Duchamp:
  Characterization and model of temperature effect on the conducted immunity of Op-Amp. 2055-2060
• 
  He Huang, Alexandre Boyer, Sonia Bendhia:
  Analysis and modeling of passive device degradation for a long-term electromagnetic emission study of a DC-DC converter. 2061-2066
• 
  Ala Ayed, Tristan Dubois, Jean-Luc Levant, Geneviève Duchamp:
  Failure mechanism study and immunity modeling of an embedded analog-to-digital converter based on immunity measurements. 2067-2071
• 
  Iuri A. C. Gomes, Mayler G. A. Martins, André Inácio Reis, Fernanda Lima Kastensmidt:
  Exploring the use of approximate TMR to mask transient faults in logic with low area overhead. 2072-2076
• 
  Raphael Segabinazzi Ferreira, Fabian Vargas:
  ShadowStack: A new approach for secure program execution. 2077-2081
• 
  Dawei Pan, Datong Liu, Jun Zhou, Guoyong Zhang:
  Anomaly detection for satellite power subsystem with associated rules based on Kernel Principal Component Analysis. 2082-2086
• 
  Luca Sterpone, Boyang Du, Sarah Azimi:
  Radiation-induced single event transients modeling and testing on nanometric flash-based technologies. 2087-2091
• 
  Liansheng Liu, Shaojun Wang, Datong Liu, Yujie Zhang, Yu Peng:
  Entropy-based sensor selection for condition monitoring and prognostics of aircraft engine. 2092-2096
• 
  André Durier, Alain Bensoussan, Moustafa Zerarka, Chaimae Ghfiri, Alexandre Boyer, Hélène Frémont:
  A methodologic project to characterize and model COTS component reliability. 2097-2102
• 
  Jurgen Vanhamel, D. Fussen, Emmanuel Dekemper, Eddy Neefs, B. Van Opstal, D. Pieroux, Jeroen Maes, Emmanuel Van Lil, Paul Leroux:
  RF-driving of acoustic-optical tunable filters; design, realization and qualification of analog and digital modules for ESA. 2103-2107
• 
  A. Ahilan, P. Deepa:
  Design for built-in FPGA reliability via fine-grained 2-D error correction codes. 2108-2112
• 
  Dae Hyun Kim, Soonyoung Cha, Linda S. Milor:
  Built-in self-test for bias temperature instability, hot-carrier injection, and gate oxide breakdown in embedded DRAMs. 2113-2118

SESSION H : European FIB User Group (EFUG)

• 
  Andriy Lotnyk, D. Poppitz, U. Ross, J. W. Gerlach, Frank Frost, S. Bernütz, E. Thelander, B. Rauschenbach:
  Focused high- and low-energy ion milling for TEM specimen preparation. 2119-2125
• 
  Emanuela Ricci, F. Cazzaniga, S. Testai:
  TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon. 2126-2130
• 
  O. A. Ageev, Alexey S. Kolomiytsev, A. V. Bykov, V. A. Smirnov, I. N. Kots:
  Fabrication of advanced probes for atomic force microscopy using focused ion beam. 2131-2134
• 
  Audrey Garnier, Giuseppe Filoni, Tomas Hrncír, Lukas Hladík:
  Plasma FIB: Enlarge your field of view and your field of applications. 2135-2141
• 
  Andrzej Czerwinski, Mariusz Pluska, Adam Laszcz, Jacek Ratajczak, Kamil Pierscinski, Dorota Pierscinska, Piotr Gutowski, Piotr Karbownik, Maciej Bugajski:
  Formation of coupled-cavities in quantum cascade lasers using focused ion beam milling. 2142-2146

TUTORIALS

• 
  Jean-Luc Autran, Daniela Munteanu:
  Radiation and COTS at ground level. 2147-2153
• 
  Peter Jacob:
  Failure analysis and reliability on system level. 2154-2158
• 
  Gert Vogel:
  Avoiding flex cracks in ceramic capacitors: Analytical tool for a reliable failure analysis and guideline for positioning cercaps on PCBs. 2159-2164
• 
  Andrew J. Wileman, Suresh Perinpanayagam:
  Integrated vehicle health management: An approach to dealing with lifetime prediction considerations on relays. 2165-2171

Volume 55, Number 11, November 2015

Special Section: International Electron Devices and Materials Symposium 2014.

• 
  Juin J. Liou, Chun-Chieh Lin, Chu-Hsuan Lin:
  Editorial. 2173
• 
  Hsueh-Tao Chou, Ho-Chun Hsu, Chiu-Hui Lien, Shi-Ting Chen:
  The effect of various concentrations of PVDF-HFP polymer gel electrolyte for dye-sensitized solar cell. 2174-2177
• 
  Hao-Chieh Lee, Kuei-Shu Chang-Liao, Yan-Lin Li:
  Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H₂. 2178-2182
• 
  Wei-Fong Chi, Kuei-Shu Chang-Liao, Shih-Han Yi, Chen-Chien Li, Yan-Lin Li:
  Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. 2183-2187
• 
  Yu-Ping Hsiao, Wen-Luh Yang, Li-Min Lin, Fun-Tat Chin, Yu-Hsien Lin, Ke-Luen Yang, Chi-Chang Wu:
  Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. 2188-2197
• 
  K. C. Lin, P. C. Juan, C. H. Liu, Mu-Chun Wang, C. H. Chou:
  Leakage current mechanism and effect of Y₂O₃ doped with Zr high-K gate dielectrics. 2198-2202
• 
  Shea-Jue Wang, Mu-Chun Wang, Shuang-Yuan Chen, Wen-How Lan, Bor-Wen Yang, L. S. Huang, Chuan-Hsi Liu:
  Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment. 2203-2207
• 
  Hsueh-Tao Chou, Ke-Ming Lin, Ho-Chun Hsu:
  Fabrication of TiO₂ compact layer precursor at various reaction times for dye sensitized solar cells. 2208-2212
• 
  Chang-Chun Lee, Chien-Chao Huang:
  Induced thermo-mechanical reliability of copper-filled TSV interposer by transient selective annealing technology. 2213-2219
• 
  Chun-Tse Chou, Boris Hudec, Chung-Wei Hsu, Wei-Li Lai, Chih-Cheng Chang, Tuo-Hung Hou:
  Crossbar array of selector-less TaO_x/TiO₂ bilayer RRAM. 2220-2223
• 
  Shih-Hung Lin, You-Lin Wu, Yu-Huei Hwang, Jing-Jenn Lin:
  Study of radiation hardness of HfO₂-based resistive switching memory at nanoscale by conductive atomic force microscopy. 2224-2228
• 
  Chun-Yu Lin, Yan-Lian Chiu:
  Investigation on SCR-based ESD protection device for biomedical integrated circuits in a 0.18-μm CMOS process. 2229-2235

Regular Papers

• 
  Yunfeng Xi, Javier A. Salcedo, Yuanzhong Paul Zhou, Juin J. Liou, Jean-Jacques Hajjar:
  Design and characterization of ESD solutions with EMC robustness for automotive applications. 2236-2246
• 
  Hans de Vries, Thanh Trung Nguyen, Bert Op het Veld:
  Increasing the cycle life of lithium ion cells by partial state of charge cycling. 2247-2253
• 
  Clemens Helfmeier, Anne Beyreuther, Alexander Fox, Christian Boit:
  Ultra sensitive measurement of dielectric current under pulsed stress conditions. 2254-2257
• 
  A. Sasikumar, A. R. Arehart, Glen David Via, B. Winningham, Brian S. Poling, E. R. Heller, S. A. Ringel:
  Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps. 2258-2262
• 
  H. L. Hao, L. K. Wu, W. J. Chung, Y. Zhang, Z. W. Shen:
  Process optimization of RTA on the characteristics of ITO-coated GaN-based LEDs. 2263-2268
• 
  Quan Chen, Xiaobing Luo, Qi Chen, Kai Wang, Sheng Liu, Jingyan Li:
  Research on lumen depreciation related to LED packages by in-situ measurement method. 2269-2275
• 
  Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
  20 GHz on-chip measurement of ESD waveform for system level analysis. 2276-2283
• 
  Muhammad Mubasher Saleem, Aurelio Somà:
  Design optimization of RF-MEMS switch considering thermally induced residual stress and process uncertainties. 2284-2298
• 
  Choon-W. Nahm:
  Zinc oxide-praseodymia semiconducting varistors having a powerful surge suppression capability. 2299-2305
• 
  Mi-Ri Choi, Hyung-Giun Kim, Taeg-Woo Lee, Young-Jun Jeon, Yong-Keun Ahn, Kyo-Wang Koo, You-Cheol Jang, So-Yeon Park, Jae-Hak Yee, Nam-Kwon Cho, Il-Tae Kang, Sangshik Kim, Seung-Zeon Han, Sung-Hwan Lim:
  Microstructural evaluation and failure analysis of Ag wire bonded to Al pads. 2306-2315
• 
  Y. Y. Tan, Q. L. Yang, Kok-Swee Sim, Li Tao Sun, Xing Wu:
  Cu-Al intermetallic compound investigation using ex-situ post annealing and in-situ annealing. 2316-2323
• 
  Ashok Sridhar, Sandeep M. Perinchery, Edsger C. P. Smits, Rajesh Mandamparambil, Jeroen van den Brand:
  Reliability investigations on LIFT-printed isotropic conductive adhesive joints for system-in-foil applications. 2324-2330
• 
  Ee-Hua Wong, Jarrod Cook, M. Dreno, Dao-Long Chen, Yi-Shao Lai:
  Characterising Arrhenius moisture diffusivity constants using non-isothermal sorption. 2331-2335
• 
  Tz-Cheng Chiu, Bo-Sheng Lee, Dong-Yi Huang, Yu-Ting Yang, Yi-Hsiu Tseng:
  Time-domain viscoelastic constitutive model based on concurrent fitting of frequency-domain characteristics. 2336-2344
• 
  James C. E. Mertens, Antony Kirubanandham, Nikhilesh Chawla:
  In situ fixture for multi-modal characterization during electromigration and thermal testing of wire-like microscale specimens. 2345-2353
• 
  Per-Erik Tegehall, Göran Wetter:
  Impact of laminate cracks under solder pads on the fatigue lives of ball grid array solder joints. 2354-2370
• 
  Pushparajah Rajaguru, Hua Lu, Chris Bailey:
  A time dependent damage indicator model for Sn3.5Ag solder layer in power electronic module. 2371-2381
• 
  Ronald Schöngrundner, Megan Jo Cordill, Günther A. Maier, Hans-Peter Gänser:
  Adhesion energy of printed circuit board materials using four-point-bending validated with finite element simulations. 2382-2390
• 
  H. W. Zhang, Yang Liu, J. Wang, F. L. Sun:
  Effect of elevated temperature on PCB responses and solder interconnect reliability under vibration loading. 2391-2395
• 
  Ying Ding, Ruyu Tian, Xiuli Wang, Chunjin Hang, Fang Yu, Ling Zhou, Xiangang Meng, Yanhong Tian:
  Coupling effects of mechanical vibrations and thermal cycling on reliability of CCGA solder joints. 2396-2402
• 
  Guoshuai Yang, Donghua Yang, Liangliang Li:
  Microstructure and morphology of interfacial intermetallic compound CoSn₃ in Sn-Pb/Co-P solder joints. 2403-2411
• 
  Javad Alirezaeyan, Saleh Yousefi, Ali Doniavi:
  Adaptive reliability satisfaction in wireless sensor networks through controlling the number of active routing paths. 2412-2422
• 
  Bahareh J. Farahani, Saeed Safari:
  Cross-layer custom instruction selection to address PVTA variations and soft error. 2423-2438
• 
  Mohammad Maghsoudloo, Hamid R. Zarandi:
  Design space exploration of non-uniform cache access for soft-error vulnerability mitigation. 2439-2452
• 
  Saeideh Alinezhad Chamazcoti, Ziba Delavari, Seyed Ghassem Miremadi, Hossein Asadi:
  On endurance and performance of erasure codes in SSD-based storage systems. 2453-2467
• 
  Elham Cheshmikhani, Hamid R. Zarandi:
  Probabilistic analysis of dynamic and temporal fault trees using accurate stochastic logic gates. 2468-2480

Book Review

• 
  Chong Leong Gan, Uda Hashim:
  Wafer-Level Chip-Scale Packaging (Analog and Power Electronics Packaging), XVII. Springer (2015), 322, ISBN: 978-1-4939-1555-2. 2481

Volume 55, Number 12, Part A, December 2015

Special Issue: Selected papers of 2015 Reliability of Compound Semiconductors Workshop (ROCS 2015).

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 2483
• 
  William J. Roesch:
  Setting stress conditions that qualify application expectations. 2484-2492
• 
  Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball:
  Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. 2493-2498
• 
  Bruce M. Paine:
  Scaling DC lifetests on GaN HEMT to RF conditions. 2499-2504
• 
  James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball:
  Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. 2505-2510
• 
  Gergana I. Drandova:
  Temperature, humidity, and bias acceleration model for a GaAs pHEMT process. 2511-2515
• 
  Justin Parke, Randy Lewis, Kathy Ha, Harlan Cramer, Harold Hearne:
  Design and process related MIM cap reliability improvement. 2516-2521

Special Issue: Progress in Advanced Power Electronics Packaging.

• 
  Katsuaki Suganuma, Jenn-Ming Song, Yi-Shao Lai:
  Power electronics packaging. 2523
• 
  Su-Yan Zhao, Xin Li, Yun-Hui Mei, Guo-Quan Lu:
  Study on high temperature bonding reliability of sintered nano-silver joint on bare copper plate. 2524-2531
• 
  Haidong Yan, Yun-Hui Mei, Xin Li, Pu Zhang, Guo-Quan Lu:
  Degradation of high power single emitter laser modules using nanosilver paste in continuous pulse conditions. 2532-2541
• 
  R. Mahmudi, D. Farasheh:
  Impression creep behavior of Zn-4Al-3Mg-xSn high-temperature lead-free solders. 2542-2548
• 
  Wei Chih Liu, Yan Hao Chen, Te-yuan Chung, Cheng Yi Liu:
  Study of Al-Cu compounds as soldering bond pad for high-power device packaging. 2549-2553
• 
  Takuya Kadoguchi, Keisuke Gotou, Kimihiro Yamanaka, Shijo Nagao, Katsuaki Suganuma:
  Electromigration behavior in Cu/Ni-P/Sn-Cu based joint system with low current density. 2554-2559
• 
  Masahisa Fujino, Ikuo Soga, Daiyu Kondo, Yoshikatsu Ishizuki, Taisuke Iwai, Tadatomo Suga:
  Fast atom bombardment onto vertically aligned multi-walled carbon nanotube bumps to achieve low interconnect resistance with Au layer. 2560-2564
• 
  Jin Hong Lim, Jeong Jin Kim, Jeon-Wook Yang:
  Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al₂O₃ particles. 2565-2568
• 
  Tengfei Cui, Qiang Li, Yimin Xuan, Ping Zhang:
  Preparation and thermal properties of the graphene-polyolefin adhesive composites: Application in thermal interface materials. 2569-2574
• 
  Hanguang Zheng, Khai D. T. Ngo, Guo-Quan Lu:
  Thermal characterization system for transient thermal impedance measurement and power cycling of IGBT modules. 2575-2581
• 
  Tao-Chih Chang, Chang-Chun Lee, Chia-Ping Hsieh, Sheng-Che Hung, Ren-Shin Cheng:
  Electrical characteristics and reliability performance of IGBT power device packaging by chip embedding technology. 2582-2588
• 
  Ming-Yi Tsai, P. S. Huang, C. H. Lin, C. T. Wu, S. C. Hu:
  Mechanical design and analysis of direct-plated-copper aluminum nitride substrates for enhancing thermal reliability. 2589-2595
• 
  Imran Yaqub, Jianfeng Li, Christopher Mark Johnson:
  Dependence of overcurrent failure modes of IGBT modules on interconnect technologies. 2596-2605

Volume 55, Number 12, Part B, December 2015

• 
  Harald Gossner, Charvaka Duvvury:
  System efficient ESD design. 2607-2613
• 
  Usman Khalid, Antonio Mastrandrea, Mauro Olivieri:
  Effect of NBTI/PBTI aging and process variations on write failures in MOSFET and FinFET flip-flops. 2614-2626
• 
  Cen Xiong, Yonghong Li, Shuhuan Liu, Du Tang, Jinxin Zhang, Chaohui He:
  Hot carrier effect on a single SiGe HBT's EMI response. 2627-2633
• 
  Jason P. Jones, Eric Heller, Donald Dorsey, Samuel Graham:
  Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects. 2634-2639
• 
  Georgios Kampitsis, Stavros Papathanassiou, Stefanos N. Manias:
  Comparative evaluation of the short-circuit withstand capability of 1.2 kV silicon carbide (SiC) power transistors in real life applications. 2640-2646
• 
  N. Vinodhkumar, Y. V. Bhuvaneshwari, K. K. Nagarajan, R. Srinivasan:
  Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation. 2647-2653
• 
  Jianlin Huang, Dusan S. Golubovic, Sau Koh, Dao-Guo Yang, Xiupeng Li, Xuejun Fan, G. Q. Zhang:
  Optical degradation mechanisms of mid-power white-light LEDs in LM-80-08 tests. 2654-2662
• 
  Wei Lai, Xianming Liu, Weimin Chen, Xiaohua Lei, Xueying Cao:
  Dynamic compact thermal model of high power light emitting diode. 2663-2670
• 
  Guanggao Chen, Xiaokang Liu, Zongtao Li, Yong Tang, Longsheng Lu, Binhai Yu, Qiu Chen:
  Failure-mechanism analysis for vertical high-power LEDs under external pressure. 2671-2677
• 
  Sung-Uk Zhang:
  Quantification of silicone degradation for LED packages using finite element analysis. 2678-2684
• 
  Murat Soylu, I. Orak, O. Dayan, Z. Serbetci:
  A novel photodiode based on Ruthenium(II) complex containing polydentate pyridine as photocatalyst. 2685-2688
• 
  M. A. Matin, A. Ikedo, Takeshi Kawano, K. Sawada, Makoto Ishida:
  Microscale temperature sensing using novel reliable silicon vertical microprobe array: Computation and experiment. 2689-2697
• 
  Chandan K. Roy, Sushil Bhavnani, Michael C. Hamilton, R. Wayne Johnson, Roy W. Knight, Daniel K. Harris:
  Accelerated aging and thermal cycling of low melting temperature alloys as wet thermal interface materials. 2698-2704
• 
  Ming Zhou:
  AlN capping layer inserted between Cu and SiCN dielectric barrier layer for enhancing reliability of 28 nm technological node and beyond. 2705-2711
• 
  Yu Tack Kim, Kwang-Bum Kim, Yoo Eo Hyun, Ick-Jun Kim, Sunhye Yang:
  Simulation study on the lifetime of electrochemical capacitors using the accelerated degradation test under temperature and voltage stresses. 2712-2720
• 
  Haoyuan Li, Hua Li, Zhiwei Li, Fuchang Lin, Wenjuan Wang, Bowen Wang, Xiang Huang, Xiaolong Guo:
  Temperature dependence of self-healing characteristics of metallized polypropylene film. 2721-2726
• 
  Fen Chen, Carole Graas, Michael A. Shinosky, Kai Zhao, Shreesh Narasimha, Xiao Hu Liu, Chunyan Tian:
  Breakdown data generation and in-die deconvolution methodology to address BEOL and MOL dielectric breakdown challenges. 2727-2747
• 
  Alexandre Simionovski, Gilson I. Wirth:
  Adding a self-reset feature to the Bulk-BICS with dynamic storage cell. 2748-2753
• 
  Jiaoyan Chen, Sorin Cotofana, Satish Grandhi, Christian Spagnol, Emanuel M. Popovici:
  Inverse Gaussian distribution based timing analysis of Sub-threshold CMOS circuits. 2754-2761
• 
  Chean Shen Lee, Guang-Ming Zhang, David M. Harvey, Hong-Wei Ma:
  Development of C-Line plot technique for the characterization of edge effects in acoustic imaging: A case study using flip chip package geometry. 2762-2768
• 
  F. X. Che, John H. L. Pang:
  Study on reliability of PQFP assembly with lead free solder joints under random vibration test. 2769-2776
• 
  Fang Liu, Ye Lu, Zhen Wang, Zhiming Zhang:
  Numerical simulation and fatigue life estimation of BGA packages under random vibration loading. 2777-2785
• 
  Lassaad Ben Fekih, Georges Kouroussis, Olivier Verlinden:
  Verification of empirical warp-based design criteria of space electronic boards. 2786-2792
• 
  Walide Chenniki, Isabelle Bord-Majek, Mélanie Louarn, Vincent Gaud, Jean-Luc Diot, Komkrisd Wongtimnoi, Yves Ousten:
  Liquid Crystal Polymer for QFN packaging: Predicted thermo-mechanical fatigue and Design for Reliability. 2793-2798
• 
  Pierre Eckold, M. S. Sellers, Rainer Niewa, Werner Hügel:
  The surface energies of β-Sn - A new concept for corrosion and whisker mitigation. 2799-2807
• 
  Van Luong Nguyen, Chin-Sung Chung, Ho-Kyung Kim:
  The tensile impact properties of aged Sn-3Ag-0.5Cu/Cu solder joints. 2808-2816
• 
  Guanglan Liao, Li Du, Lei Su, Miao Zeng, Lei Nie, Tielin Shi:
  Using RBF networks for detection and prediction of flip chip with missing bumps. 2817-2825
• 
  Guanglan Liao, Pengfei Chen, Li Du, Lei Su, Zhiping Liu, Zirong Tang, Tielin Shi:
  Using SOM neural network for X-ray inspection of missing-bump defects in three-dimensional integration. 2826-2832
• 
  Cristiano P. Chenet, Lucas A. Tambara, Gabriel de M. Borges, Fernanda Lima Kastensmidt, Marcelo Soares Lubaszewski, Tiago R. Balen:
  Exploring design diversity redundancy to improve resilience in mixed-signal systems. 2833-2844
• 
  Mojtaba Valinataj:
  Fault-tolerant carry look-ahead adder architectures robust to multiple simultaneous errors. 2845-2857